DE102011079307B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102011079307B4
DE102011079307B4 DE102011079307.0A DE102011079307A DE102011079307B4 DE 102011079307 B4 DE102011079307 B4 DE 102011079307B4 DE 102011079307 A DE102011079307 A DE 102011079307A DE 102011079307 B4 DE102011079307 B4 DE 102011079307B4
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DE
Germany
Prior art keywords
region
impurity
semiconductor
semiconductor device
impurity region
Prior art date
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Active
Application number
DE102011079307.0A
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German (de)
English (en)
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DE102011079307A1 (de
Inventor
Tomohide Terashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of DE102011079307A1 publication Critical patent/DE102011079307A1/de
Application granted granted Critical
Publication of DE102011079307B4 publication Critical patent/DE102011079307B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE102011079307.0A 2010-08-30 2011-07-18 Halbleitervorrichtung Active DE102011079307B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-191998 2010-08-30
JP2010191998A JP5610930B2 (ja) 2010-08-30 2010-08-30 半導体装置

Publications (2)

Publication Number Publication Date
DE102011079307A1 DE102011079307A1 (de) 2012-03-01
DE102011079307B4 true DE102011079307B4 (de) 2015-08-13

Family

ID=45566353

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011079307.0A Active DE102011079307B4 (de) 2010-08-30 2011-07-18 Halbleitervorrichtung

Country Status (5)

Country Link
US (2) US8466515B2 (enExample)
JP (1) JP5610930B2 (enExample)
KR (1) KR101209564B1 (enExample)
CN (1) CN102386231B (enExample)
DE (1) DE102011079307B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
JP5762353B2 (ja) * 2012-05-01 2015-08-12 三菱電機株式会社 半導体装置
CN104717555B (zh) * 2013-12-11 2018-01-02 华为技术有限公司 视频码流的获取方法及装置
US20230207568A1 (en) * 2021-12-23 2023-06-29 IceMos Technology Limited Semiconductor Device and Method for Power MOSFET on Partial SOI

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005018378A1 (de) * 2004-04-21 2005-11-17 Mitsubishi Denki K.K. Halbleitervorrichtung der Bauart mit dielektrischer Isolierung
DE102008038834A1 (de) * 2007-11-16 2009-05-28 Mitsubishi Electric Corp. Halbleitervorrichtung und Verfahren zur Herstellung derselben
EP2105962A2 (en) * 2008-03-27 2009-09-30 Hitachi Ltd. Semiconductor device and production method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3059442B2 (ja) * 1988-11-09 2000-07-04 株式会社日立製作所 半導体記憶装置
JPH04259259A (ja) * 1991-02-14 1992-09-14 Nippondenso Co Ltd 薄膜ｓｏｉ構造のｍｉｓトランジスタ
JP2739018B2 (ja) 1992-10-21 1998-04-08 三菱電機株式会社 誘電体分離半導体装置及びその製造方法
JP3588882B2 (ja) * 1995-12-08 2004-11-17 富士電機デバイステクノロジー株式会社 誘電体分離基板の製造方法
US7098506B2 (en) * 2000-06-28 2006-08-29 Renesas Technology Corp. Semiconductor device and method for fabricating the same
JP2001025235A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp 駆動装置および電力変換装置
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP4477886B2 (ja) * 2003-04-28 2010-06-09 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4889072B2 (ja) 2003-12-19 2012-02-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4629490B2 (ja) 2005-05-09 2011-02-09 三菱電機株式会社 誘電体分離型半導体装置
JP4984579B2 (ja) * 2006-03-10 2012-07-25 株式会社日立製作所 高耐圧半導体集積回路装置
EP1863081A3 (en) 2006-03-10 2008-03-05 Hitachi, Ltd. Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
JP4797203B2 (ja) 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005018378A1 (de) * 2004-04-21 2005-11-17 Mitsubishi Denki K.K. Halbleitervorrichtung der Bauart mit dielektrischer Isolierung
DE102008038834A1 (de) * 2007-11-16 2009-05-28 Mitsubishi Electric Corp. Halbleitervorrichtung und Verfahren zur Herstellung derselben
EP2105962A2 (en) * 2008-03-27 2009-09-30 Hitachi Ltd. Semiconductor device and production method thereof

Also Published As

Publication number Publication date
US20140015004A1 (en) 2014-01-16
US8466515B2 (en) 2013-06-18
US20120049240A1 (en) 2012-03-01
CN102386231A (zh) 2012-03-21
KR101209564B1 (ko) 2012-12-07
KR20120022056A (ko) 2012-03-09
JP5610930B2 (ja) 2014-10-22
US8878239B2 (en) 2014-11-04
JP2012049428A (ja) 2012-03-08
DE102011079307A1 (de) 2012-03-01
CN102386231B (zh) 2014-06-18

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