JP4889072B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4889072B2 JP4889072B2 JP2003423339A JP2003423339A JP4889072B2 JP 4889072 B2 JP4889072 B2 JP 4889072B2 JP 2003423339 A JP2003423339 A JP 2003423339A JP 2003423339 A JP2003423339 A JP 2003423339A JP 4889072 B2 JP4889072 B2 JP 4889072B2
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- oxide film
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 61
- 238000009792 diffusion process Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 description 95
- 108091006146 Channels Proteins 0.000 description 41
- 230000015556 catabolic process Effects 0.000 description 32
- 239000000969 carrier Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000000370 acceptor Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Thyristors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
2、52 エピタキシャル層
3 ドレイン領域
4 ソース領域
5 固定電位絶縁電極
6 絶縁膜
7 トレンチ
8 チャネル領域
9、53 P型拡散領域
10、11、15 Al層
12 シリコン酸化膜
13、14、28、29、60、61 コンタクト領域
16 ソース電極
17 ドレイン電極
18 ゲート電極
181、621 ゲート電極の一端
19 P型拡散領域
21、54 第1のガードリング
22、55 第2のガードリング
23、56 第3のガードリング
24、57 アニュラーリング
25、26、58 熱酸化膜
27、59 CVD酸化膜
30、63 シールド電極
32 ×印
33、64 丸印
Claims (3)
- 複数のセルが形成される実動作領域と該実動作領域の周囲に配置されたガードリング領域とを有する半導体層と、
前記半導体層表面から前記実動作領域と前記ガードリング領域との境界を形成する拡散領域と、
前記半導体層表面に形成される熱酸化膜と、
該熱酸化膜上面に形成されるCVD酸化膜とを有し、
前記熱酸化膜はその膜厚の異なる第1の熱酸化膜と第2の熱酸化膜から成り、前記第2の熱酸化膜は前記第1の熱酸化膜よりもその膜厚が厚く、前記第2の熱酸化膜は前記ガードリング領域上面に形成され、
前記境界を形成する拡散領域の上に、前記熱酸化膜と前記CVD酸化膜とを貫通するコンタクトホールを設け、
前記コンタクトホールを介して前記境界を形成する拡散領域にコンタクトするゲート電極を設け、
前記ゲート電極の端を、前記境界を形成する拡散領域が形成する外周辺よりも前記ガードリング領域側に突出するように、前記第2の熱酸化膜上の前記CVD酸化膜上に配置したことを特徴とする半導体装置。 - 前記第1の熱酸化膜は、前記第2の熱酸化膜とは同一工程により形成された後に除去され、再び、所望の厚みに形成される酸化膜であることを特徴とする請求項1に記載の半導体装置。
- 前記ゲート電極は、前記実動作領域を囲むように配置されていることを特徴とする請求項1または請求項2に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003423339A JP4889072B2 (ja) | 2003-12-19 | 2003-12-19 | 半導体装置 |
TW093128674A TWI257704B (en) | 2003-12-19 | 2004-09-22 | Semiconductor device |
KR1020040076309A KR100573633B1 (ko) | 2003-12-19 | 2004-09-23 | 절연 게이트형 바이폴라 트랜지스터 |
CNB2004100120067A CN100377366C (zh) | 2003-12-19 | 2004-09-28 | 半导体装置 |
US10/958,640 US7399999B2 (en) | 2003-12-19 | 2004-10-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003423339A JP4889072B2 (ja) | 2003-12-19 | 2003-12-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005183719A JP2005183719A (ja) | 2005-07-07 |
JP4889072B2 true JP4889072B2 (ja) | 2012-02-29 |
Family
ID=34675356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003423339A Expired - Fee Related JP4889072B2 (ja) | 2003-12-19 | 2003-12-19 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7399999B2 (ja) |
JP (1) | JP4889072B2 (ja) |
KR (1) | KR100573633B1 (ja) |
CN (1) | CN100377366C (ja) |
TW (1) | TWI257704B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4935192B2 (ja) * | 2006-05-31 | 2012-05-23 | 三菱電機株式会社 | 半導体装置 |
JP5159289B2 (ja) * | 2007-12-20 | 2013-03-06 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5610930B2 (ja) * | 2010-08-30 | 2014-10-22 | 三菱電機株式会社 | 半導体装置 |
CN103681816A (zh) * | 2012-09-09 | 2014-03-26 | 苏州英能电子科技有限公司 | 一种具有浮置环结构的双极型晶体管 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4414560A (en) * | 1980-11-17 | 1983-11-08 | International Rectifier Corporation | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region |
JPH03252167A (ja) * | 1990-02-28 | 1991-11-11 | Toyota Autom Loom Works Ltd | 高耐圧用半導体装置 |
JPH04256372A (ja) * | 1991-02-08 | 1992-09-11 | Toyota Autom Loom Works Ltd | 半導体装置及びその製造方法 |
JP2950025B2 (ja) * | 1992-07-02 | 1999-09-20 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JP3417013B2 (ja) * | 1993-10-18 | 2003-06-16 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JP4031371B2 (ja) * | 1995-03-15 | 2008-01-09 | 株式会社東芝 | 高耐圧半導体素子 |
JPH08306937A (ja) * | 1995-04-28 | 1996-11-22 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
JPH10256542A (ja) * | 1997-03-12 | 1998-09-25 | Toshiba Corp | 半導体装置 |
JP5011612B2 (ja) * | 2000-10-31 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
GB2373634B (en) * | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
JP2002141357A (ja) * | 2000-10-31 | 2002-05-17 | Mitsubishi Electric Corp | 半導体装置 |
DE10205345B9 (de) * | 2001-02-09 | 2007-12-20 | Fuji Electric Co., Ltd., Kawasaki | Halbleiterbauelement |
JP2004095659A (ja) * | 2002-08-29 | 2004-03-25 | Sanyo Electric Co Ltd | 半導体装置 |
-
2003
- 2003-12-19 JP JP2003423339A patent/JP4889072B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-22 TW TW093128674A patent/TWI257704B/zh not_active IP Right Cessation
- 2004-09-23 KR KR1020040076309A patent/KR100573633B1/ko not_active IP Right Cessation
- 2004-09-28 CN CNB2004100120067A patent/CN100377366C/zh not_active Expired - Fee Related
- 2004-10-06 US US10/958,640 patent/US7399999B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100377366C (zh) | 2008-03-26 |
JP2005183719A (ja) | 2005-07-07 |
KR20050062357A (ko) | 2005-06-23 |
US7399999B2 (en) | 2008-07-15 |
CN1630100A (zh) | 2005-06-22 |
US20050133814A1 (en) | 2005-06-23 |
KR100573633B1 (ko) | 2006-04-26 |
TWI257704B (en) | 2006-07-01 |
TW200522373A (en) | 2005-07-01 |
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