JP5539537B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5539537B2 JP5539537B2 JP2012546590A JP2012546590A JP5539537B2 JP 5539537 B2 JP5539537 B2 JP 5539537B2 JP 2012546590 A JP2012546590 A JP 2012546590A JP 2012546590 A JP2012546590 A JP 2012546590A JP 5539537 B2 JP5539537 B2 JP 5539537B2
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- wiring
- conductor pattern
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Description
<半導体装置の回路構成>
図1は、本発明の一実施の形態の半導体装置を構成する半導体チップ(半導体装置)CP1の平面レイアウト図であり、半導体チップCP1に形成された回路ブロックなどのレイアウトの一例が示されている。
図2は、本実施の形態の半導体チップCP1が有する発振回路OSを示す回路図である。図3は、発振部4の発振信号(周波数F)と、スイッチSW1のオン・オフの切換と、容量C1の電圧(充電電圧)Vbの関係を模式的に示す説明図である。
次に、本実施の形態の半導体装置PKGの全体構成について説明する。本実施の形態の半導体装置PKGは、樹脂封止された半導体チップCP1を備えた半導体装置(半導体パッケージ)である。すなわち、本実施の形態の半導体装置PKGは、上記半導体チップCP1を樹脂封止した樹脂封止型の半導体装置(半導体パッケージ)である。以下、半導体装置PKGの具体的な構成について説明する。
次に、本実施の形態の半導体チップCP1の構造について、具体的に説明する。
次に、本実施の形態の半導体チップCP1の製造工程の一例を図面を参照して説明する。図9〜図14は、本実施の形態の半導体チップCP1の製造工程中の要部断面図であり、上記図8に対応する領域の断面が示されている。
次に、基準抵抗形成領域1Bに形成されている基準抵抗Rstの、より具体的な構造(構成)について説明する。
図20は、半導体チップCP1の平面図(上面図)であり、半導体チップCP1の主面11a側が示されている。なお、上記図1に示されるように、半導体チップCP1の主面11aの周辺部には、四辺(辺S1,S2,S3,S4)に沿って複数のパッド電極PDが配置(配列)されているが、図20ではパッド電極PDの図示は省略している。
次に、本実施の形態1の第1の変形例について説明する。
図31は、本実施の形態の半導体チップCP1の要部断面図であり、上記実施の形態1の上記図8に対応するものである。
図42は、本実施の形態の半導体チップCP1の要部断面図であり、上記実施の形態2の上記図31に対応するものである。
本実施の形態では、半導体チップCP1における発振回路領域OS1と基準抵抗Rstの配置例について説明する。
1B 基準抵抗形成領域
2 電圧−電流変換部
3 電圧生成部
4 発振部
5 カレントミラー回路
7 スイッチ制御信号
8 VCO
11a 主面
11b 裏面
12 接着材
21 素子分離領域
21a 素子分離溝
23 ゲート絶縁膜
24 多結晶シリコン膜
31,32,33,34 絶縁膜
51,52,53,54 絶縁膜
61 配線
AD1 AD/DA領域
BW ボンディングワイヤ
C1 容量
CDP 導電体パターン
CDP2 接続部
CNT コンタクトホール
CP1 半導体チップ
CT1 中心
DP ダイパッド
FLA1 フラッシュメモリ領域
GE ゲート電極
IF1 I/F回路領域
Iref 基準電流
LD リード
LOG1 論理回路領域
M1,M1a,M2,M2a,M3 配線
MR 封止樹脂部
NW n型ウエル
OP1,OP2 オペアンプOS 発振回路
OS1 発振回路領域
PC1 電源回路領域
PD パッド電極
PG1,PG2,PG3,PG4 プラグ
PKG 半導体装置
Q1 MISFET
RAM1 RAM領域
RG1,RG2,RG3,RG4,RG5,RG6,RG7,RG8 領域
Rst 基準抵抗
S1,S2,S3,S4 辺
SD p型半導体領域
SH2,SH3,SH4 ビアホール
SUB 半導体基板
SW1,SW2,SW3 スイッチ
SWS サイドウォールスペーサ
Va 基準電圧
Vb 電圧
Vc 電圧
Vref 基準電圧
Claims (13)
- 樹脂封止された半導体チップを備えた半導体装置であって、
前記半導体チップは、発振回路を有し、
前記発振回路は、基準抵抗を利用して電圧を電流に変換する電圧−電流変換部と、前記電圧−電流変換部からの入力電流と発振部の発振周波数に応じて電圧を生成する電圧生成部と、前記電圧生成部からの入力電圧に応じた周波数で発振する前記発振部と、を有し、
前記電圧−電流変換部では、前記基準抵抗に基準電圧が印加されることで基準電流が生成され、前記基準電流に応じた電流が前記入力電流として前記電圧生成部に入力され、
前記基準抵抗は、前記半導体チップの主面のうち、前記半導体チップの前記主面の第1の辺と、前記第1の辺の一端と前記半導体チップの前記主面の中心とを結ぶ第1の線と、前記第1の辺の他端と前記半導体チップの前記主面の中心とを結ぶ第2の線とで囲まれた第1の領域内に、前記第1の辺に直交する第1の方向に延在する複数の抵抗体が直列に接続されることにより形成され、
前記基準抵抗は、前記第1の領域のうち、前記第1の辺から0.1mm以上離れた位置に形成され、かつ、前記第1の線の中心と前記第2の線の中心とを結ぶ第3の線よりも前記第1の辺側に近い領域内に配置されている、半導体装置。 - 請求項1記載の半導体装置において、
前記各抵抗体は、前記第1の方向に延在する第1導電体パターンにより形成されている、半導体装置。 - 請求項2記載の半導体装置において、
前記複数の抵抗体は、前記第1の方向に交差する第2の方向に延在する、前記第1導電体パターンと同層または異なる層の第2導電体パターンにより直列に接続されている、半導体装置。 - 請求項3記載の半導体装置において、
前記第2の方向は、前記第1の辺に平行な方向である、半導体装置。 - 請求項4記載の半導体装置において、
前記複数の抵抗体は、前記第2の方向に並んで配置されている、半導体装置。 - 請求項2記載の半導体装置において、
前記第1導電体パターンは、金属からなる、半導体装置。 - 請求項6記載の半導体装置において、
前記第1導電体パターンは、高融点金属からなる、半導体装置。 - 請求項7記載の半導体装置において、
前記第1導電体パターンは、タングステン、窒化チタンまたは窒化タンタルからなる、半導体装置。 - 請求項2記載の半導体装置において、
前記第1導電体パターンは、多結晶シリコンからなる、半導体装置。 - 請求項1記載の半導体装置において、
前記基準抵抗を除く前記発振回路が形成された発振回路形成領域は、前記半導体チップの前記主面の中心付近に配置されている、半導体装置。 - 請求項10記載の半導体装置において、
前記基準抵抗は、前記半導体チップの前記主面において、前記発振回路形成領域から離間して配置されている、半導体装置。 - 請求項1記載の半導体装置において、
前記半導体チップの前記主面の周辺部には、複数のパッド電極が形成され、
前記基準抵抗を除く前記発振回路が形成された発振回路形成領域は、前記複数のパッド電極のうちの少なくとも1つ以上と平面的に重なる位置に配置されている、半導体装置。 - 請求項1記載の半導体装置において、
前記半導体チップの前記主面の周辺部には、複数のパッド電極が形成され、
前記基準抵抗は、前記複数のパッド電極が配置されている前記周辺部よりも内側に配置されている、半導体装置。
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US20160218062A1 (en) * | 2015-01-23 | 2016-07-28 | Texas Instruments Incorporated | Thin film resistor integration in copper damascene metallization |
US9570571B1 (en) * | 2015-11-18 | 2017-02-14 | International Business Machines Corporation | Gate stack integrated metal resistors |
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KR102328064B1 (ko) * | 2018-06-19 | 2021-11-17 | 누보톤 테크놀로지 재팬 가부시키가이샤 | 반도체 장치 |
US10784193B2 (en) | 2018-07-27 | 2020-09-22 | Texas Instruments Incorporated | IC with thin film resistor with metal walls |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5434787A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Formation of resistance of semiconductor integrated circuit |
JPS5688350A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Semiconductor device |
JPS57139955A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Integrated circuit device |
JPS6079766A (ja) * | 1983-10-05 | 1985-05-07 | Nec Corp | R−2rはしご形抵抗回路 |
JPS6367765A (ja) * | 1986-09-09 | 1988-03-26 | Nec Corp | 集積回路装置 |
JPH05145412A (ja) * | 1991-11-21 | 1993-06-11 | Toshiba Corp | 電圧制御発振回路 |
JPH0697368A (ja) * | 1992-09-11 | 1994-04-08 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JPH1117113A (ja) * | 1997-06-24 | 1999-01-22 | Seiko Epson Corp | 半導体集積装置 |
JP2002083932A (ja) * | 2000-09-06 | 2002-03-22 | Seiko Epson Corp | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6232637A (ja) | 1985-08-05 | 1987-02-12 | Mitsubishi Electric Corp | 半導体装置 |
JPS6417113A (en) * | 1987-07-10 | 1989-01-20 | Micro Joho Keikaku Kk | Input method for word processor, computer or the like |
JP3064932B2 (ja) | 1996-12-20 | 2000-07-12 | 日本電気株式会社 | 半導体集積回路装置 |
JP2001196372A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
JP4212767B2 (ja) * | 2000-12-21 | 2009-01-21 | 旭化成エレクトロニクス株式会社 | 高速電流スイッチ回路および高周波電流源 |
US7053751B2 (en) * | 2001-05-14 | 2006-05-30 | Ricoh Company, Ltd. | Resistance hybrid, and voltage detection and constant voltage generating circuits incorporating such resistance hybrid |
JP3787591B2 (ja) * | 2002-02-14 | 2006-06-21 | セイコーインスツル株式会社 | 抵抗回路 |
JP2004095916A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US7449783B2 (en) * | 2005-05-05 | 2008-11-11 | Texas Instruments Incorporated | Nonlinear via arrays for resistors to reduce systematic circuit offsets |
JP5147196B2 (ja) | 2005-06-01 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 素子基板 |
JP5360674B2 (ja) | 2008-06-24 | 2013-12-04 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
US9252793B2 (en) * | 2010-11-29 | 2016-02-02 | Renesas Electronics Corporation | Semiconductor device |
-
2010
- 2010-11-29 US US13/990,030 patent/US9252793B2/en active Active
- 2010-11-29 KR KR1020167028848A patent/KR101730784B1/ko active IP Right Grant
- 2010-11-29 CN CN201510660740.2A patent/CN105185781B/zh active Active
- 2010-11-29 KR KR1020137013705A patent/KR101668623B1/ko active IP Right Grant
- 2010-11-29 JP JP2012546590A patent/JP5539537B2/ja active Active
- 2010-11-29 WO PCT/JP2010/071264 patent/WO2012073307A1/ja active Application Filing
- 2010-11-29 CN CN201080070396.7A patent/CN103229291B/zh active Active
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2011
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2015
- 2015-11-17 US US14/943,836 patent/US9503018B2/en active Active
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2016
- 2016-06-21 HK HK16107155.8A patent/HK1219173A1/zh unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5434787A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Formation of resistance of semiconductor integrated circuit |
JPS5688350A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Semiconductor device |
JPS57139955A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Integrated circuit device |
JPS6079766A (ja) * | 1983-10-05 | 1985-05-07 | Nec Corp | R−2rはしご形抵抗回路 |
JPS6367765A (ja) * | 1986-09-09 | 1988-03-26 | Nec Corp | 集積回路装置 |
JPH05145412A (ja) * | 1991-11-21 | 1993-06-11 | Toshiba Corp | 電圧制御発振回路 |
JPH0697368A (ja) * | 1992-09-11 | 1994-04-08 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JPH1117113A (ja) * | 1997-06-24 | 1999-01-22 | Seiko Epson Corp | 半導体集積装置 |
JP2002083932A (ja) * | 2000-09-06 | 2002-03-22 | Seiko Epson Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
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TW201222812A (en) | 2012-06-01 |
TWI548085B (zh) | 2016-09-01 |
US9503018B2 (en) | 2016-11-22 |
CN105185781B (zh) | 2018-06-22 |
WO2012073307A1 (ja) | 2012-06-07 |
KR101668623B1 (ko) | 2016-10-24 |
CN105185781A (zh) | 2015-12-23 |
KR20160124916A (ko) | 2016-10-28 |
CN103229291B (zh) | 2015-11-25 |
KR101730784B1 (ko) | 2017-04-26 |
JPWO2012073307A1 (ja) | 2014-05-19 |
KR20140053817A (ko) | 2014-05-08 |
US9252793B2 (en) | 2016-02-02 |
US20160142011A1 (en) | 2016-05-19 |
CN103229291A (zh) | 2013-07-31 |
US20130314165A1 (en) | 2013-11-28 |
HK1219173A1 (zh) | 2017-03-24 |
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