JPS57139955A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS57139955A
JPS57139955A JP2582581A JP2582581A JPS57139955A JP S57139955 A JPS57139955 A JP S57139955A JP 2582581 A JP2582581 A JP 2582581A JP 2582581 A JP2582581 A JP 2582581A JP S57139955 A JPS57139955 A JP S57139955A
Authority
JP
Japan
Prior art keywords
resistivity
die
integrated circuit
circuit device
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2582581A
Other languages
Japanese (ja)
Other versions
JPH0131303B2 (en
Inventor
Yutaka Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2582581A priority Critical patent/JPS57139955A/en
Publication of JPS57139955A publication Critical patent/JPS57139955A/en
Publication of JPH0131303B2 publication Critical patent/JPH0131303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make the plural resistivity constant by a method wherein the plural resistors are arranged so that they may roughly become the symmetric points to the center of the integrated circuit device in an integrated circuit device comprising plural resistors. CONSTITUTION:In the plural resistors Rg-Rr, the resistivity thereof are made constant i.e. Rg/Rh=Ri/Rj=Rk/Rl=Rm/Rn=Ro/Rp=Rq/Rr. Rg and Rh, Ri and Rj on a semiconductor IC circuit die 2 are respectively perpendicular to each other and arranged so that they may roughly become the symmetric points to the center of a die on the line passing the center of the die. The fluctuation of the resistivity after the resin molding decreases down to 0.2-0.3%. Through these procedures, the stress the die receives from the resin molding is made almost equivalent making the resistivity preferable even after assembling.
JP2582581A 1981-02-24 1981-02-24 Integrated circuit device Granted JPS57139955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2582581A JPS57139955A (en) 1981-02-24 1981-02-24 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2582581A JPS57139955A (en) 1981-02-24 1981-02-24 Integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57139955A true JPS57139955A (en) 1982-08-30
JPH0131303B2 JPH0131303B2 (en) 1989-06-26

Family

ID=12176628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2582581A Granted JPS57139955A (en) 1981-02-24 1981-02-24 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57139955A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012073307A1 (en) * 2010-11-29 2012-06-07 ルネサスエレクトロニクス株式会社 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434787A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Formation of resistance of semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434787A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Formation of resistance of semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012073307A1 (en) * 2010-11-29 2012-06-07 ルネサスエレクトロニクス株式会社 Semiconductor device
JP5539537B2 (en) * 2010-11-29 2014-07-02 ルネサスエレクトロニクス株式会社 Semiconductor device
US9252793B2 (en) 2010-11-29 2016-02-02 Renesas Electronics Corporation Semiconductor device
US9503018B2 (en) 2010-11-29 2016-11-22 Renesas Electronics Corporation Semiconductor device

Also Published As

Publication number Publication date
JPH0131303B2 (en) 1989-06-26

Similar Documents

Publication Publication Date Title
JPS57139955A (en) Integrated circuit device
DE69116517T2 (en) Semiconductor photoelectric detector with a vertical optical axis
DE3269837D1 (en) Method of producing a thick-film varistor on a hybrid circuit substrate, and varistor obtained in this way
JPS57187945A (en) Manufacture of semiconductor device
JPS54144872A (en) Electronic circuit device
JPS5618439A (en) Semiconductor device consisting of different ic
JPS5661151A (en) Package semiconductor integrated circuit
JPS5779647A (en) Master slice chip
EP0100999A3 (en) Integrated semiconductor circuit comprising bipolar elements, and method of producing the same
JPS5866346A (en) Semiconductor device
JPS5298472A (en) Lead frame for resin molding
JPS5710946A (en) Integrated circuit
JPS5772364A (en) Integrated circuit
JPS55151357A (en) Lead frame for semiconductor device
JPS57104247A (en) Terminal block with resistor
JPS5773954A (en) Integrated circuit
JPS5828365Y2 (en) integrated circuit device
JPS5372570A (en) Manufacture of semiconductor device
JPS5624962A (en) Manufacture of lead frame for semiconductor device
JPS55144560A (en) Device for identifying wire
JPS5763852A (en) Hybrid integrated circuit
Fang Some further applications of finite difference operators
JPS52102582A (en) Electronic parts
JPS5792840A (en) Semiconductor assembling parts
JPS55138845A (en) Method of fabricating semiconductor device