JPS5772364A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS5772364A
JPS5772364A JP14971080A JP14971080A JPS5772364A JP S5772364 A JPS5772364 A JP S5772364A JP 14971080 A JP14971080 A JP 14971080A JP 14971080 A JP14971080 A JP 14971080A JP S5772364 A JPS5772364 A JP S5772364A
Authority
JP
Japan
Prior art keywords
resistor
openings
resistance value
insulating film
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14971080A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Kazuhiro Murase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14971080A priority Critical patent/JPS5772364A/en
Publication of JPS5772364A publication Critical patent/JPS5772364A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Abstract

PURPOSE:To obtain optional resistance value by forming an insulating film onto a resistor and connecting a section between a conductor shaped so as to cover the resistor and the resistor through an opening section shaped to the insulating film. CONSTITUTION:The openings 14, 15 are formed onto the insulating film covering the resistor 12 while the cnductors 16, 17 are mounted. The conductors 16, 17 are conducted with the resistor 12 through the openings 14, 15. When decreasing resistance value, a mask pattern for the openings is altered, and the opening 15' is shaped. Resistance value between the conductors 16, 17 is changed to resistance value corresponding to length between the openings 14, 15' at that time.
JP14971080A 1980-10-24 1980-10-24 Integrated circuit Pending JPS5772364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14971080A JPS5772364A (en) 1980-10-24 1980-10-24 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14971080A JPS5772364A (en) 1980-10-24 1980-10-24 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS5772364A true JPS5772364A (en) 1982-05-06

Family

ID=15481123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14971080A Pending JPS5772364A (en) 1980-10-24 1980-10-24 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS5772364A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097660A (en) * 1983-11-01 1985-05-31 Toshiba Corp Semiconductor device
JPS6218731A (en) * 1985-07-17 1987-01-27 Nec Corp Semiconductor device
GB2418777A (en) * 2004-09-29 2006-04-05 Agere Systems Inc Integrated circuit with adjustable resistor
WO2006090459A1 (en) * 2005-02-24 2006-08-31 Hitachi, Ltd. Wireless ic tag and method for manufacturing same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097660A (en) * 1983-11-01 1985-05-31 Toshiba Corp Semiconductor device
JPH0557740B2 (en) * 1983-11-01 1993-08-24 Tokyo Shibaura Electric Co
JPS6218731A (en) * 1985-07-17 1987-01-27 Nec Corp Semiconductor device
GB2418777A (en) * 2004-09-29 2006-04-05 Agere Systems Inc Integrated circuit with adjustable resistor
US7176781B2 (en) 2004-09-29 2007-02-13 Agere Systems Inc Structure and method for adjusting integrated circuit resistor value
WO2006090459A1 (en) * 2005-02-24 2006-08-31 Hitachi, Ltd. Wireless ic tag and method for manufacturing same
JPWO2006090459A1 (en) * 2005-02-24 2008-07-17 株式会社日立製作所 Wireless IC tag and manufacturing method thereof
US7800200B2 (en) 2005-02-24 2010-09-21 Hitachi, Ltd. Wireless IC tag and method for manufacturing same
JP4724708B2 (en) * 2005-02-24 2011-07-13 株式会社日立製作所 Wireless IC tag

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