HK1219173A1 - 半導體器件 - Google Patents

半導體器件

Info

Publication number
HK1219173A1
HK1219173A1 HK16107155.8A HK16107155A HK1219173A1 HK 1219173 A1 HK1219173 A1 HK 1219173A1 HK 16107155 A HK16107155 A HK 16107155A HK 1219173 A1 HK1219173 A1 HK 1219173A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
HK16107155.8A
Other languages
English (en)
Inventor
堤聰明
船戶是宏
奧平智仁
山形整人
內田明久
鈴木智久
鐘江義晴
寺崎健
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1219173A1 publication Critical patent/HK1219173A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
HK16107155.8A 2010-11-29 2016-06-21 半導體器件 HK1219173A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/071264 WO2012073307A1 (ja) 2010-11-29 2010-11-29 半導体装置

Publications (1)

Publication Number Publication Date
HK1219173A1 true HK1219173A1 (zh) 2017-03-24

Family

ID=46171295

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16107155.8A HK1219173A1 (zh) 2010-11-29 2016-06-21 半導體器件

Country Status (7)

Country Link
US (2) US9252793B2 (zh)
JP (1) JP5539537B2 (zh)
KR (2) KR101730784B1 (zh)
CN (2) CN103229291B (zh)
HK (1) HK1219173A1 (zh)
TW (1) TWI548085B (zh)
WO (1) WO2012073307A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539537B2 (ja) * 2010-11-29 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置
JP6344163B2 (ja) * 2014-09-03 2018-06-20 株式会社デンソー シャント抵抗器
CN104316676B (zh) * 2014-11-05 2016-08-03 长兴电子材料（昆山）有限公司 一种用于环氧模塑料的模流痕检测的模具
US20160218062A1 (en) * 2015-01-23 2016-07-28 Texas Instruments Incorporated Thin film resistor integration in copper damascene metallization
US9570571B1 (en) * 2015-11-18 2017-02-14 International Business Machines Corporation Gate stack integrated metal resistors
JP6800815B2 (ja) * 2017-06-27 2020-12-16 ルネサスエレクトロニクス株式会社 半導体装置
TWI759207B (zh) * 2018-06-19 2022-03-21 日商新唐科技日本股份有限公司 半導體裝置
CN114823664A (zh) 2018-06-19 2022-07-29 新唐科技日本株式会社 半导体装置
US10784193B2 (en) 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls
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TW201222812A (en) 2012-06-01
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US20160142011A1 (en) 2016-05-19
US20130314165A1 (en) 2013-11-28
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