JP5536414B2 - パネル構造体、パネル構造体を含む表示装置及びその製造方法 - Google Patents

パネル構造体、パネル構造体を含む表示装置及びその製造方法 Download PDF

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Publication number
JP5536414B2
JP5536414B2 JP2009238280A JP2009238280A JP5536414B2 JP 5536414 B2 JP5536414 B2 JP 5536414B2 JP 2009238280 A JP2009238280 A JP 2009238280A JP 2009238280 A JP2009238280 A JP 2009238280A JP 5536414 B2 JP5536414 B2 JP 5536414B2
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Japan
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electrode
insulating layer
gate
panel structure
layer
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Japanese (ja)
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JP2010098317A (ja
JP2010098317A5 (enExample
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敬 培 朴
明 官 柳
基 燦 朴
鍾 白 宣
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009238280A 2008-10-17 2009-10-15 パネル構造体、パネル構造体を含む表示装置及びその製造方法 Active JP5536414B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080102151A KR101540341B1 (ko) 2008-10-17 2008-10-17 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법
KR10-2008-0102151 2008-10-17

Publications (3)

Publication Number Publication Date
JP2010098317A JP2010098317A (ja) 2010-04-30
JP2010098317A5 JP2010098317A5 (enExample) 2012-10-25
JP5536414B2 true JP5536414B2 (ja) 2014-07-02

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JP2009238280A Active JP5536414B2 (ja) 2008-10-17 2009-10-15 パネル構造体、パネル構造体を含む表示装置及びその製造方法

Country Status (3)

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US (2) US8294150B2 (enExample)
JP (1) JP5536414B2 (enExample)
KR (1) KR101540341B1 (enExample)

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KR102211966B1 (ko) * 2013-10-14 2021-02-15 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
CN103700665B (zh) * 2013-12-13 2016-03-02 京东方科技集团股份有限公司 金属氧化物薄膜晶体管阵列基板及其制作方法、显示装置
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KR102596126B1 (ko) * 2016-10-19 2023-10-31 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
CN106784014A (zh) 2016-12-23 2017-05-31 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板、显示装置
KR102588659B1 (ko) * 2018-06-26 2023-10-12 삼성디스플레이 주식회사 표시 장치

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Also Published As

Publication number Publication date
JP2010098317A (ja) 2010-04-30
US8294150B2 (en) 2012-10-23
KR20100042932A (ko) 2010-04-27
US20130015454A1 (en) 2013-01-17
US8698159B2 (en) 2014-04-15
KR101540341B1 (ko) 2015-07-30
US20100096634A1 (en) 2010-04-22

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