JP5520455B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5520455B2
JP5520455B2 JP2008153379A JP2008153379A JP5520455B2 JP 5520455 B2 JP5520455 B2 JP 5520455B2 JP 2008153379 A JP2008153379 A JP 2008153379A JP 2008153379 A JP2008153379 A JP 2008153379A JP 5520455 B2 JP5520455 B2 JP 5520455B2
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JP
Japan
Prior art keywords
gas
flow path
gas flow
plasma processing
processing apparatus
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JP2008153379A
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English (en)
Japanese (ja)
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JP2009302205A (ja
JP2009302205A5 (enExample
Inventor
昌樹 平山
忠弘 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Tokyo Electron Ltd
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Tohoku University NUC
Tokyo Electron Ltd
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Priority to JP2008153379A priority Critical patent/JP5520455B2/ja
Application filed by Tohoku University NUC, Tokyo Electron Ltd filed Critical Tohoku University NUC
Priority to CN2009801214626A priority patent/CN102057465A/zh
Priority to KR1020107024030A priority patent/KR101202270B1/ko
Priority to US12/997,211 priority patent/US9196460B2/en
Priority to PCT/JP2009/060159 priority patent/WO2009150979A1/ja
Priority to CN201210243672.6A priority patent/CN102760633B/zh
Priority to TW098119217A priority patent/TW201015653A/zh
Publication of JP2009302205A publication Critical patent/JP2009302205A/ja
Publication of JP2009302205A5 publication Critical patent/JP2009302205A5/ja
Application granted granted Critical
Publication of JP5520455B2 publication Critical patent/JP5520455B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008153379A 2008-06-11 2008-06-11 プラズマ処理装置 Active JP5520455B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008153379A JP5520455B2 (ja) 2008-06-11 2008-06-11 プラズマ処理装置
KR1020107024030A KR101202270B1 (ko) 2008-06-11 2009-06-03 플라즈마 처리 장치 및 플라즈마 처리 방법
US12/997,211 US9196460B2 (en) 2008-06-11 2009-06-03 Plasma processing apparatus and plasma processing method
PCT/JP2009/060159 WO2009150979A1 (ja) 2008-06-11 2009-06-03 プラズマ処理装置及びプラズマ処理方法
CN2009801214626A CN102057465A (zh) 2008-06-11 2009-06-03 等离子体处理装置及等离子体处理方法
CN201210243672.6A CN102760633B (zh) 2008-06-11 2009-06-03 等离子体处理装置及等离子体处理方法
TW098119217A TW201015653A (en) 2008-06-11 2009-06-09 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008153379A JP5520455B2 (ja) 2008-06-11 2008-06-11 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2009302205A JP2009302205A (ja) 2009-12-24
JP2009302205A5 JP2009302205A5 (enExample) 2011-08-11
JP5520455B2 true JP5520455B2 (ja) 2014-06-11

Family

ID=41416688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008153379A Active JP5520455B2 (ja) 2008-06-11 2008-06-11 プラズマ処理装置

Country Status (6)

Country Link
US (1) US9196460B2 (enExample)
JP (1) JP5520455B2 (enExample)
KR (1) KR101202270B1 (enExample)
CN (2) CN102760633B (enExample)
TW (1) TW201015653A (enExample)
WO (1) WO2009150979A1 (enExample)

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JP6137986B2 (ja) * 2013-08-07 2017-05-31 株式会社荏原製作所 基板洗浄及び乾燥装置
US9336997B2 (en) * 2014-03-17 2016-05-10 Applied Materials, Inc. RF multi-feed structure to improve plasma uniformity
JP6378360B2 (ja) * 2014-11-26 2018-08-22 株式会社日立ハイテクノロジーズ イオンビーム装置
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WO2018042877A1 (ja) * 2016-09-05 2018-03-08 信越半導体株式会社 気相成長装置、エピタキシャルウェーハの製造方法及び気相成長装置用のアタッチメント
JP6624110B2 (ja) * 2017-02-10 2019-12-25 株式会社豊田中央研究所 化合物単結晶製造装置、及び化合物単結晶の製造方法
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JP6835019B2 (ja) 2018-03-14 2021-02-24 株式会社豊田中央研究所 半導体装置及びその製造方法
JP7346698B2 (ja) * 2019-07-15 2023-09-19 アプライド マテリアルズ インコーポレイテッド フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ
CN112349572B (zh) * 2019-08-09 2024-03-08 中微半导体设备(上海)股份有限公司 一种气体喷淋头及等离子处理装置
JP7428521B2 (ja) * 2020-01-15 2024-02-06 株式会社テクノ菱和 電極
JP7540864B2 (ja) * 2020-06-15 2024-08-27 東京エレクトロン株式会社 シャワープレート及び成膜装置
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JP7648307B2 (ja) * 2021-06-22 2025-03-18 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
KR102858462B1 (ko) * 2021-12-08 2025-09-12 가부시키가이샤 티마이크 활성 가스 생성 장치
TWI821950B (zh) * 2022-03-18 2023-11-11 韓商細美事有限公司 晶粒表面處理裝置以及其晶粒結合系統
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Also Published As

Publication number Publication date
CN102760633A (zh) 2012-10-31
WO2009150979A1 (ja) 2009-12-17
US20110180213A1 (en) 2011-07-28
CN102057465A (zh) 2011-05-11
TW201015653A (en) 2010-04-16
JP2009302205A (ja) 2009-12-24
US9196460B2 (en) 2015-11-24
KR20100126571A (ko) 2010-12-01
CN102760633B (zh) 2015-09-02
KR101202270B1 (ko) 2012-11-16

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