KR101202270B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR101202270B1
KR101202270B1 KR1020107024030A KR20107024030A KR101202270B1 KR 101202270 B1 KR101202270 B1 KR 101202270B1 KR 1020107024030 A KR1020107024030 A KR 1020107024030A KR 20107024030 A KR20107024030 A KR 20107024030A KR 101202270 B1 KR101202270 B1 KR 101202270B1
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gas
flow path
gas flow
gas discharge
processing container
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Korean (ko)
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KR20100126571A (ko
Inventor
마사키 히라야마
타다히로 오오미
Original Assignee
고쿠리츠다이가쿠호진 도호쿠다이가쿠
도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020107024030A 2008-06-11 2009-06-03 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR101202270B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008153379A JP5520455B2 (ja) 2008-06-11 2008-06-11 プラズマ処理装置
JPJP-P-2008-153379 2008-06-11
PCT/JP2009/060159 WO2009150979A1 (ja) 2008-06-11 2009-06-03 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20100126571A KR20100126571A (ko) 2010-12-01
KR101202270B1 true KR101202270B1 (ko) 2012-11-16

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KR1020107024030A Active KR101202270B1 (ko) 2008-06-11 2009-06-03 플라즈마 처리 장치 및 플라즈마 처리 방법

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Country Link
US (1) US9196460B2 (enExample)
JP (1) JP5520455B2 (enExample)
KR (1) KR101202270B1 (enExample)
CN (2) CN102760633B (enExample)
TW (1) TW201015653A (enExample)
WO (1) WO2009150979A1 (enExample)

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JP6835019B2 (ja) 2018-03-14 2021-02-24 株式会社豊田中央研究所 半導体装置及びその製造方法
JP7346698B2 (ja) * 2019-07-15 2023-09-19 アプライド マテリアルズ インコーポレイテッド フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ
CN112349572B (zh) * 2019-08-09 2024-03-08 中微半导体设备(上海)股份有限公司 一种气体喷淋头及等离子处理装置
JP7428521B2 (ja) * 2020-01-15 2024-02-06 株式会社テクノ菱和 電極
JP7540864B2 (ja) * 2020-06-15 2024-08-27 東京エレクトロン株式会社 シャワープレート及び成膜装置
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Also Published As

Publication number Publication date
CN102760633A (zh) 2012-10-31
US20110180213A1 (en) 2011-07-28
JP2009302205A (ja) 2009-12-24
WO2009150979A1 (ja) 2009-12-17
TW201015653A (en) 2010-04-16
CN102760633B (zh) 2015-09-02
US9196460B2 (en) 2015-11-24
CN102057465A (zh) 2011-05-11
JP5520455B2 (ja) 2014-06-11
KR20100126571A (ko) 2010-12-01

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