CN102760633B - 等离子体处理装置及等离子体处理方法 - Google Patents
等离子体处理装置及等离子体处理方法 Download PDFInfo
- Publication number
- CN102760633B CN102760633B CN201210243672.6A CN201210243672A CN102760633B CN 102760633 B CN102760633 B CN 102760633B CN 201210243672 A CN201210243672 A CN 201210243672A CN 102760633 B CN102760633 B CN 102760633B
- Authority
- CN
- China
- Prior art keywords
- gas
- flow path
- plasma processing
- gas flow
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims abstract description 327
- 238000000034 method Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 221
- 239000002184 metal Substances 0.000 claims description 221
- 239000000758 substrate Substances 0.000 claims description 53
- 230000005284 excitation Effects 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000001902 propagating effect Effects 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 7
- 238000003672 processing method Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 935
- 239000004020 conductor Substances 0.000 description 13
- 239000002826 coolant Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008153379A JP5520455B2 (ja) | 2008-06-11 | 2008-06-11 | プラズマ処理装置 |
| JP2008-153379 | 2008-06-11 | ||
| CN2009801214626A CN102057465A (zh) | 2008-06-11 | 2009-06-03 | 等离子体处理装置及等离子体处理方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801214626A Division CN102057465A (zh) | 2008-06-11 | 2009-06-03 | 等离子体处理装置及等离子体处理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102760633A CN102760633A (zh) | 2012-10-31 |
| CN102760633B true CN102760633B (zh) | 2015-09-02 |
Family
ID=41416688
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801214626A Pending CN102057465A (zh) | 2008-06-11 | 2009-06-03 | 等离子体处理装置及等离子体处理方法 |
| CN201210243672.6A Active CN102760633B (zh) | 2008-06-11 | 2009-06-03 | 等离子体处理装置及等离子体处理方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801214626A Pending CN102057465A (zh) | 2008-06-11 | 2009-06-03 | 等离子体处理装置及等离子体处理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9196460B2 (enExample) |
| JP (1) | JP5520455B2 (enExample) |
| KR (1) | KR101202270B1 (enExample) |
| CN (2) | CN102057465A (enExample) |
| TW (1) | TW201015653A (enExample) |
| WO (1) | WO2009150979A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821950B (zh) * | 2022-03-18 | 2023-11-11 | 韓商細美事有限公司 | 晶粒表面處理裝置以及其晶粒結合系統 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
| KR101327458B1 (ko) * | 2012-01-10 | 2013-11-08 | 주식회사 유진테크 | 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치 |
| KR101206836B1 (ko) * | 2012-03-14 | 2012-11-30 | 한국델파이주식회사 | 스티어링 기어의 랙 바 지지 장치 |
| US9267205B1 (en) * | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
| JP2014096553A (ja) * | 2012-10-09 | 2014-05-22 | Tokyo Electron Ltd | プラズマ処理方法、及びプラズマ処理装置 |
| JP2014082354A (ja) * | 2012-10-17 | 2014-05-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP5700032B2 (ja) * | 2012-12-26 | 2015-04-15 | 東京エレクトロン株式会社 | プラズマドーピング装置、およびプラズマドーピング方法 |
| JP6137986B2 (ja) * | 2013-08-07 | 2017-05-31 | 株式会社荏原製作所 | 基板洗浄及び乾燥装置 |
| US9336997B2 (en) | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
| JP6378360B2 (ja) * | 2014-11-26 | 2018-08-22 | 株式会社日立ハイテクノロジーズ | イオンビーム装置 |
| JP6404111B2 (ja) * | 2014-12-18 | 2018-10-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| DE102015101461A1 (de) | 2015-02-02 | 2016-08-04 | Aixtron Se | Vorrichtung zum Beschichten eines großflächigen Substrats |
| JP6628065B2 (ja) * | 2016-09-05 | 2020-01-08 | 信越半導体株式会社 | 気相成長装置、エピタキシャルウェーハの製造方法及び気相成長装置用のアタッチメント |
| JP6624110B2 (ja) | 2017-02-10 | 2019-12-25 | 株式会社豊田中央研究所 | 化合物単結晶製造装置、及び化合物単結晶の製造方法 |
| CN106604514A (zh) * | 2017-02-21 | 2017-04-26 | 唐山铸锐科技有限公司 | 排管及低温等离子体发生设备 |
| CN107118381A (zh) * | 2017-06-16 | 2017-09-01 | 南京工业大学 | 聚四氟乙烯亲水性改性等离子体处理装置及方法 |
| JP7052796B2 (ja) * | 2017-07-28 | 2022-04-12 | 住友電気工業株式会社 | シャワーヘッド及びその製造方法 |
| CN120335251A (zh) | 2018-02-13 | 2025-07-18 | Asml荷兰有限公司 | 清洁euv腔室中的结构表面 |
| JP6835019B2 (ja) | 2018-03-14 | 2021-02-24 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
| CN114127902A (zh) * | 2019-07-15 | 2022-03-01 | 应用材料公司 | 用于平板显示器的大面积高密度等离子体处理腔室 |
| CN112349572B (zh) * | 2019-08-09 | 2024-03-08 | 中微半导体设备(上海)股份有限公司 | 一种气体喷淋头及等离子处理装置 |
| JP7428521B2 (ja) * | 2020-01-15 | 2024-02-06 | 株式会社テクノ菱和 | 電極 |
| JP7540864B2 (ja) * | 2020-06-15 | 2024-08-27 | 東京エレクトロン株式会社 | シャワープレート及び成膜装置 |
| US12394604B2 (en) | 2020-09-11 | 2025-08-19 | Applied Materials, Inc. | Plasma source with floating electrodes |
| US11776793B2 (en) | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
| JP7648307B2 (ja) * | 2021-06-22 | 2025-03-18 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
| US12354845B2 (en) * | 2021-12-08 | 2025-07-08 | Tmeic Corporation | Active gas generation apparatus |
| US12327810B2 (en) | 2022-04-21 | 2025-06-10 | Semes Co., Ltd. | Die surface treatment apparatus and die bonding system including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300875A (zh) * | 1999-12-07 | 2001-06-27 | 夏普公司 | 等离子体处理装置 |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02114530A (ja) | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | 薄膜形成装置 |
| US5122251A (en) * | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5091049A (en) * | 1989-06-13 | 1992-02-25 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| TW293983B (enExample) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
| US5611864A (en) * | 1994-03-24 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma processing apparatus and processing method using the same |
| US5620523A (en) * | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
| TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| JPH10158847A (ja) * | 1996-12-06 | 1998-06-16 | Toshiba Corp | マイクロ波励起によるプラズマ処理装置 |
| US6357385B1 (en) * | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
| US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
| JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US6132552A (en) * | 1998-02-19 | 2000-10-17 | Micron Technology, Inc. | Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor |
| JP4141021B2 (ja) * | 1998-09-18 | 2008-08-27 | 東京エレクトロン株式会社 | プラズマ成膜方法 |
| JP3668079B2 (ja) * | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
| JP3482949B2 (ja) * | 2000-08-04 | 2004-01-06 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US7008484B2 (en) | 2002-05-06 | 2006-03-07 | Applied Materials Inc. | Method and apparatus for deposition of low dielectric constant materials |
| US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| JP4179041B2 (ja) * | 2003-04-30 | 2008-11-12 | 株式会社島津製作所 | 有機ｅｌ用保護膜の成膜装置、製造方法および有機ｅｌ素子 |
| CN102181819A (zh) * | 2004-03-03 | 2011-09-14 | 东京毅力科创株式会社 | 等离子体氮化处理方法 |
| KR100856159B1 (ko) * | 2004-05-27 | 2008-09-03 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
| JP2006128000A (ja) * | 2004-10-29 | 2006-05-18 | Advanced Lcd Technologies Development Center Co Ltd | プラズマ処理装置 |
| JP4770167B2 (ja) * | 2004-12-16 | 2011-09-14 | 株式会社島津製作所 | 表面波励起プラズマｃｖｄ装置を用いた成膜方法 |
| JP2006310736A (ja) * | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | ゲート絶縁膜の製造方法および半導体装置の製造方法 |
| JP5308664B2 (ja) * | 2005-09-01 | 2013-10-09 | パナソニック株式会社 | プラズマ処理装置 |
| TWI443735B (zh) | 2006-01-20 | 2014-07-01 | Tokyo Electron Ltd | Plasma processing device |
| US20080254220A1 (en) * | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
| JP4683334B2 (ja) * | 2006-03-31 | 2011-05-18 | 株式会社島津製作所 | 表面波励起プラズマ処理装置 |
| US20080081114A1 (en) | 2006-10-03 | 2008-04-03 | Novellus Systems, Inc. | Apparatus and method for delivering uniform fluid flow in a chemical deposition system |
| JP5252613B2 (ja) * | 2006-12-25 | 2013-07-31 | 国立大学法人東北大学 | イオン注入装置およびイオン注入方法 |
| WO2008123605A1 (en) * | 2007-03-29 | 2008-10-16 | Tokyo Electron Limited | Plasma process apparatus |
| DE112008001548B4 (de) * | 2007-06-11 | 2013-07-11 | Tokyo Electron Ltd. | Plasmabearbeitungsvorrichtung und Plasmabearbeitungsverfahren |
| JP2008305736A (ja) * | 2007-06-11 | 2008-12-18 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理装置の使用方法およびプラズマ処理装置のクリーニング方法 |
| US20080303744A1 (en) * | 2007-06-11 | 2008-12-11 | Tokyo Electron Limited | Plasma processing system, antenna, and use of plasma processing system |
| JP4918592B2 (ja) * | 2007-06-11 | 2012-04-18 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
| KR101088876B1 (ko) * | 2007-06-11 | 2011-12-07 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 플라즈마 처리 장치, 급전 장치 및 플라즈마 처리 장치의 사용 방법 |
| JP5058727B2 (ja) * | 2007-09-06 | 2012-10-24 | 東京エレクトロン株式会社 | 天板構造及びこれを用いたプラズマ処理装置 |
| JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5213530B2 (ja) * | 2008-06-11 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5421551B2 (ja) * | 2008-06-11 | 2014-02-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US20110114600A1 (en) * | 2008-06-11 | 2011-05-19 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
| JP5222744B2 (ja) * | 2009-01-21 | 2013-06-26 | 国立大学法人東北大学 | プラズマ処理装置 |
| KR101747158B1 (ko) * | 2009-11-06 | 2017-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
| CN104094677A (zh) * | 2012-02-17 | 2014-10-08 | 国立大学法人东北大学 | 等离子处理装置和等离子处理方法 |
| US9343291B2 (en) * | 2013-05-15 | 2016-05-17 | Tokyo Electron Limited | Method for forming an interfacial layer on a semiconductor using hydrogen plasma |
-
2008
- 2008-06-11 JP JP2008153379A patent/JP5520455B2/ja active Active
-
2009
- 2009-06-03 CN CN2009801214626A patent/CN102057465A/zh active Pending
- 2009-06-03 CN CN201210243672.6A patent/CN102760633B/zh active Active
- 2009-06-03 WO PCT/JP2009/060159 patent/WO2009150979A1/ja not_active Ceased
- 2009-06-03 US US12/997,211 patent/US9196460B2/en active Active
- 2009-06-03 KR KR1020107024030A patent/KR101202270B1/ko active Active
- 2009-06-09 TW TW098119217A patent/TW201015653A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300875A (zh) * | 1999-12-07 | 2001-06-27 | 夏普公司 | 等离子体处理装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821950B (zh) * | 2022-03-18 | 2023-11-11 | 韓商細美事有限公司 | 晶粒表面處理裝置以及其晶粒結合系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110180213A1 (en) | 2011-07-28 |
| WO2009150979A1 (ja) | 2009-12-17 |
| CN102057465A (zh) | 2011-05-11 |
| KR20100126571A (ko) | 2010-12-01 |
| KR101202270B1 (ko) | 2012-11-16 |
| CN102760633A (zh) | 2012-10-31 |
| US9196460B2 (en) | 2015-11-24 |
| JP2009302205A (ja) | 2009-12-24 |
| JP5520455B2 (ja) | 2014-06-11 |
| TW201015653A (en) | 2010-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102760633B (zh) | 等离子体处理装置及等离子体处理方法 | |
| JP5328685B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| KR100416308B1 (ko) | 플라즈마 처리 장치 | |
| US8327796B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP4273932B2 (ja) | 表面波励起プラズマｃｖｄ装置 | |
| WO2002080249A1 (en) | Plasma processing device | |
| EP1758149A1 (en) | Microwave plasma generating apparatus | |
| US6344420B1 (en) | Plasma processing method and plasma processing apparatus | |
| JP2001023955A (ja) | プラズマ処理装置 | |
| JP4502639B2 (ja) | シャワープレート、プラズマ処理装置、及び、製品の製造方法 | |
| CN101322237A (zh) | 基板处理装置及其使用的基板载置台和暴露于等离子体的部件 | |
| US7478609B2 (en) | Plasma process apparatus and its processor | |
| US11309167B2 (en) | Active gas generation apparatus and deposition processing apparatus | |
| JP2942138B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| CN112410759A (zh) | 喷气头结构及使用其的等离子体处理设备 | |
| TW201112884A (en) | Plasma processing apparatus | |
| JP4426632B2 (ja) | プラズマ処理装置 | |
| KR102386370B1 (ko) | 플라즈마 처리 장치 | |
| WO2011058608A1 (ja) | プラズマ処理装置 | |
| JP4781711B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| JP4554117B2 (ja) | 表面処理装置 | |
| JP4304280B2 (ja) | プラズマ生成装置およびプラズマ処理製造方法 | |
| JP5601348B2 (ja) | プラズマ発生ユニット及び表面波励起プラズマ処理装置 | |
| JP3364131B2 (ja) | プラズマ処理装置 | |
| JP2006318762A (ja) | プラズマプロセス装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |