TW201015653A - Plasma processing apparatus and plasma processing method - Google Patents
Plasma processing apparatus and plasma processing method Download PDFInfo
- Publication number
- TW201015653A TW201015653A TW098119217A TW98119217A TW201015653A TW 201015653 A TW201015653 A TW 201015653A TW 098119217 A TW098119217 A TW 098119217A TW 98119217 A TW98119217 A TW 98119217A TW 201015653 A TW201015653 A TW 201015653A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- flow path
- gas flow
- processing apparatus
- plasma processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 206
- 239000002184 metal Substances 0.000 claims description 206
- 239000000758 substrate Substances 0.000 claims description 53
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 230000037237 body shape Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 893
- 238000000034 method Methods 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008153379A JP5520455B2 (ja) | 2008-06-11 | 2008-06-11 | プラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201015653A true TW201015653A (en) | 2010-04-16 |
Family
ID=41416688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098119217A TW201015653A (en) | 2008-06-11 | 2009-06-09 | Plasma processing apparatus and plasma processing method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9196460B2 (enExample) |
| JP (1) | JP5520455B2 (enExample) |
| KR (1) | KR101202270B1 (enExample) |
| CN (2) | CN102760633B (enExample) |
| TW (1) | TW201015653A (enExample) |
| WO (1) | WO2009150979A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI602213B (zh) * | 2012-10-09 | 2017-10-11 | Tokyo Electron Ltd | Plasma processing method, and plasma processing apparatus |
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| JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
| KR101327458B1 (ko) * | 2012-01-10 | 2013-11-08 | 주식회사 유진테크 | 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치 |
| KR101206836B1 (ko) * | 2012-03-14 | 2012-11-30 | 한국델파이주식회사 | 스티어링 기어의 랙 바 지지 장치 |
| US9267205B1 (en) * | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
| JP2014082354A (ja) * | 2012-10-17 | 2014-05-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP5700032B2 (ja) * | 2012-12-26 | 2015-04-15 | 東京エレクトロン株式会社 | プラズマドーピング装置、およびプラズマドーピング方法 |
| JP6137986B2 (ja) * | 2013-08-07 | 2017-05-31 | 株式会社荏原製作所 | 基板洗浄及び乾燥装置 |
| US9336997B2 (en) * | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
| US10304656B2 (en) * | 2014-11-26 | 2019-05-28 | Hitachi High-Technologies Corporation | Ion beam device |
| JP6404111B2 (ja) * | 2014-12-18 | 2018-10-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| DE102015101461A1 (de) | 2015-02-02 | 2016-08-04 | Aixtron Se | Vorrichtung zum Beschichten eines großflächigen Substrats |
| CN109661716B (zh) * | 2016-09-05 | 2023-03-28 | 信越半导体株式会社 | 气相生长装置、外延晶片的制造方法及气相生长装置用附接件 |
| JP6624110B2 (ja) * | 2017-02-10 | 2019-12-25 | 株式会社豊田中央研究所 | 化合物単結晶製造装置、及び化合物単結晶の製造方法 |
| CN106604514A (zh) * | 2017-02-21 | 2017-04-26 | 唐山铸锐科技有限公司 | 排管及低温等离子体发生设备 |
| CN107118381A (zh) * | 2017-06-16 | 2017-09-01 | 南京工业大学 | 聚四氟乙烯亲水性改性等离子体处理装置及方法 |
| KR102578539B1 (ko) * | 2017-07-28 | 2023-09-13 | 스미토모덴키고교가부시키가이샤 | 샤워 헤드 및 그 제조 방법 |
| CN111712765A (zh) | 2018-02-13 | 2020-09-25 | Asml荷兰有限公司 | 清洁euv腔室中的结构表面 |
| JP6835019B2 (ja) | 2018-03-14 | 2021-02-24 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
| JP7346698B2 (ja) * | 2019-07-15 | 2023-09-19 | アプライド マテリアルズ インコーポレイテッド | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
| CN112349572B (zh) * | 2019-08-09 | 2024-03-08 | 中微半导体设备(上海)股份有限公司 | 一种气体喷淋头及等离子处理装置 |
| JP7428521B2 (ja) * | 2020-01-15 | 2024-02-06 | 株式会社テクノ菱和 | 電極 |
| JP7540864B2 (ja) * | 2020-06-15 | 2024-08-27 | 東京エレクトロン株式会社 | シャワープレート及び成膜装置 |
| US12394604B2 (en) | 2020-09-11 | 2025-08-19 | Applied Materials, Inc. | Plasma source with floating electrodes |
| US11776793B2 (en) | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
| JP7648307B2 (ja) * | 2021-06-22 | 2025-03-18 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
| KR102858462B1 (ko) * | 2021-12-08 | 2025-09-12 | 가부시키가이샤 티마이크 | 활성 가스 생성 장치 |
| TWI821950B (zh) * | 2022-03-18 | 2023-11-11 | 韓商細美事有限公司 | 晶粒表面處理裝置以及其晶粒結合系統 |
| US12327810B2 (en) | 2022-04-21 | 2025-06-10 | Semes Co., Ltd. | Die surface treatment apparatus and die bonding system including the same |
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| JPH02114530A (ja) | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | 薄膜形成装置 |
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| KR101088876B1 (ko) * | 2007-06-11 | 2011-12-07 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 플라즈마 처리 장치, 급전 장치 및 플라즈마 처리 장치의 사용 방법 |
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| JP5058727B2 (ja) * | 2007-09-06 | 2012-10-24 | 東京エレクトロン株式会社 | 天板構造及びこれを用いたプラズマ処理装置 |
| KR101229780B1 (ko) * | 2008-06-11 | 2013-02-05 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5213530B2 (ja) * | 2008-06-11 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5421551B2 (ja) * | 2008-06-11 | 2014-02-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
| JP5222744B2 (ja) * | 2009-01-21 | 2013-06-26 | 国立大学法人東北大学 | プラズマ処理装置 |
| KR101930230B1 (ko) * | 2009-11-06 | 2018-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
| KR20140102757A (ko) * | 2012-02-17 | 2014-08-22 | 도호쿠 다이가쿠 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| US9343291B2 (en) * | 2013-05-15 | 2016-05-17 | Tokyo Electron Limited | Method for forming an interfacial layer on a semiconductor using hydrogen plasma |
-
2008
- 2008-06-11 JP JP2008153379A patent/JP5520455B2/ja active Active
-
2009
- 2009-06-03 CN CN201210243672.6A patent/CN102760633B/zh active Active
- 2009-06-03 KR KR1020107024030A patent/KR101202270B1/ko active Active
- 2009-06-03 CN CN2009801214626A patent/CN102057465A/zh active Pending
- 2009-06-03 US US12/997,211 patent/US9196460B2/en active Active
- 2009-06-03 WO PCT/JP2009/060159 patent/WO2009150979A1/ja not_active Ceased
- 2009-06-09 TW TW098119217A patent/TW201015653A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI602213B (zh) * | 2012-10-09 | 2017-10-11 | Tokyo Electron Ltd | Plasma processing method, and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009302205A (ja) | 2009-12-24 |
| US9196460B2 (en) | 2015-11-24 |
| CN102760633B (zh) | 2015-09-02 |
| CN102057465A (zh) | 2011-05-11 |
| CN102760633A (zh) | 2012-10-31 |
| KR20100126571A (ko) | 2010-12-01 |
| JP5520455B2 (ja) | 2014-06-11 |
| KR101202270B1 (ko) | 2012-11-16 |
| US20110180213A1 (en) | 2011-07-28 |
| WO2009150979A1 (ja) | 2009-12-17 |
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