TW201015653A - Plasma processing apparatus and plasma processing method - Google Patents
Plasma processing apparatus and plasma processing method Download PDFInfo
- Publication number
- TW201015653A TW201015653A TW098119217A TW98119217A TW201015653A TW 201015653 A TW201015653 A TW 201015653A TW 098119217 A TW098119217 A TW 098119217A TW 98119217 A TW98119217 A TW 98119217A TW 201015653 A TW201015653 A TW 201015653A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- flow path
- gas flow
- processing apparatus
- plasma processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 206
- 239000002184 metal Substances 0.000 claims description 206
- 239000000758 substrate Substances 0.000 claims description 53
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 230000037237 body shape Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 893
- 238000000034 method Methods 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008153379A JP5520455B2 (ja) | 2008-06-11 | 2008-06-11 | プラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201015653A true TW201015653A (en) | 2010-04-16 |
Family
ID=41416688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098119217A TW201015653A (en) | 2008-06-11 | 2009-06-09 | Plasma processing apparatus and plasma processing method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9196460B2 (enExample) |
| JP (1) | JP5520455B2 (enExample) |
| KR (1) | KR101202270B1 (enExample) |
| CN (2) | CN102760633B (enExample) |
| TW (1) | TW201015653A (enExample) |
| WO (1) | WO2009150979A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI602213B (zh) * | 2012-10-09 | 2017-10-11 | Tokyo Electron Ltd | Plasma processing method, and plasma processing apparatus |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
| KR101327458B1 (ko) * | 2012-01-10 | 2013-11-08 | 주식회사 유진테크 | 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치 |
| KR101206836B1 (ko) * | 2012-03-14 | 2012-11-30 | 한국델파이주식회사 | 스티어링 기어의 랙 바 지지 장치 |
| US9267205B1 (en) * | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
| JP2014082354A (ja) * | 2012-10-17 | 2014-05-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP5700032B2 (ja) * | 2012-12-26 | 2015-04-15 | 東京エレクトロン株式会社 | プラズマドーピング装置、およびプラズマドーピング方法 |
| JP6137986B2 (ja) * | 2013-08-07 | 2017-05-31 | 株式会社荏原製作所 | 基板洗浄及び乾燥装置 |
| US9336997B2 (en) * | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
| JP6378360B2 (ja) * | 2014-11-26 | 2018-08-22 | 株式会社日立ハイテクノロジーズ | イオンビーム装置 |
| JP6404111B2 (ja) * | 2014-12-18 | 2018-10-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| DE102015101461A1 (de) | 2015-02-02 | 2016-08-04 | Aixtron Se | Vorrichtung zum Beschichten eines großflächigen Substrats |
| WO2018042877A1 (ja) * | 2016-09-05 | 2018-03-08 | 信越半導体株式会社 | 気相成長装置、エピタキシャルウェーハの製造方法及び気相成長装置用のアタッチメント |
| JP6624110B2 (ja) * | 2017-02-10 | 2019-12-25 | 株式会社豊田中央研究所 | 化合物単結晶製造装置、及び化合物単結晶の製造方法 |
| CN106604514A (zh) * | 2017-02-21 | 2017-04-26 | 唐山铸锐科技有限公司 | 排管及低温等离子体发生设备 |
| CN107118381A (zh) * | 2017-06-16 | 2017-09-01 | 南京工业大学 | 聚四氟乙烯亲水性改性等离子体处理装置及方法 |
| US11239057B2 (en) * | 2017-07-28 | 2022-02-01 | Sumitomo Electric Industries, Ltd. | Showerhead and method for manufacturing the same |
| NL2022556A (en) | 2018-02-13 | 2019-08-19 | Asml Netherlands Bv | Cleaning a structure surface in an euv chamber |
| JP6835019B2 (ja) | 2018-03-14 | 2021-02-24 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
| JP7346698B2 (ja) * | 2019-07-15 | 2023-09-19 | アプライド マテリアルズ インコーポレイテッド | フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ |
| CN112349572B (zh) * | 2019-08-09 | 2024-03-08 | 中微半导体设备(上海)股份有限公司 | 一种气体喷淋头及等离子处理装置 |
| JP7428521B2 (ja) * | 2020-01-15 | 2024-02-06 | 株式会社テクノ菱和 | 電極 |
| JP7540864B2 (ja) * | 2020-06-15 | 2024-08-27 | 東京エレクトロン株式会社 | シャワープレート及び成膜装置 |
| US12394604B2 (en) | 2020-09-11 | 2025-08-19 | Applied Materials, Inc. | Plasma source with floating electrodes |
| US11776793B2 (en) | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
| JP7648307B2 (ja) * | 2021-06-22 | 2025-03-18 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
| KR102858462B1 (ko) * | 2021-12-08 | 2025-09-12 | 가부시키가이샤 티마이크 | 활성 가스 생성 장치 |
| TWI821950B (zh) * | 2022-03-18 | 2023-11-11 | 韓商細美事有限公司 | 晶粒表面處理裝置以及其晶粒結合系統 |
| US12327810B2 (en) | 2022-04-21 | 2025-06-10 | Semes Co., Ltd. | Die surface treatment apparatus and die bonding system including the same |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02114530A (ja) | 1988-10-25 | 1990-04-26 | Mitsubishi Electric Corp | 薄膜形成装置 |
| US5091049A (en) * | 1989-06-13 | 1992-02-25 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5122251A (en) * | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| TW293983B (enExample) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
| US5611864A (en) * | 1994-03-24 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma processing apparatus and processing method using the same |
| US5620523A (en) * | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
| TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| JPH10158847A (ja) * | 1996-12-06 | 1998-06-16 | Toshiba Corp | マイクロ波励起によるプラズマ処理装置 |
| US6357385B1 (en) * | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
| US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
| JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US6132552A (en) * | 1998-02-19 | 2000-10-17 | Micron Technology, Inc. | Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor |
| JP4141021B2 (ja) * | 1998-09-18 | 2008-08-27 | 東京エレクトロン株式会社 | プラズマ成膜方法 |
| JP3668079B2 (ja) * | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
| JP3645768B2 (ja) | 1999-12-07 | 2005-05-11 | シャープ株式会社 | プラズマプロセス装置 |
| JP3482949B2 (ja) * | 2000-08-04 | 2004-01-06 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US7008484B2 (en) * | 2002-05-06 | 2006-03-07 | Applied Materials Inc. | Method and apparatus for deposition of low dielectric constant materials |
| US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| JP4179041B2 (ja) * | 2003-04-30 | 2008-11-12 | 株式会社島津製作所 | 有機ｅｌ用保護膜の成膜装置、製造方法および有機ｅｌ素子 |
| WO2005086215A1 (ja) * | 2004-03-03 | 2005-09-15 | Tokyo Electron Limited | プラズマ処理方法及びコンピュータ記憶媒体 |
| CN100449708C (zh) * | 2004-05-27 | 2009-01-07 | 东京毅力科创株式会社 | 基板处理装置 |
| JP2006128000A (ja) * | 2004-10-29 | 2006-05-18 | Advanced Lcd Technologies Development Center Co Ltd | プラズマ処理装置 |
| JP4770167B2 (ja) | 2004-12-16 | 2011-09-14 | 株式会社島津製作所 | 表面波励起プラズマｃｖｄ装置を用いた成膜方法 |
| JP2006310736A (ja) * | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | ゲート絶縁膜の製造方法および半導体装置の製造方法 |
| TWI423308B (zh) * | 2005-09-01 | 2014-01-11 | 松下電器產業股份有限公司 | A plasma processing apparatus, a plasma processing method, and a dielectric window for use therefor and a method of manufacturing the same |
| US20080254220A1 (en) * | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
| CN101371341B (zh) | 2006-01-20 | 2010-08-18 | 东京毅力科创株式会社 | 等离子处理装置 |
| JP4683334B2 (ja) * | 2006-03-31 | 2011-05-18 | 株式会社島津製作所 | 表面波励起プラズマ処理装置 |
| US20080081114A1 (en) * | 2006-10-03 | 2008-04-03 | Novellus Systems, Inc. | Apparatus and method for delivering uniform fluid flow in a chemical deposition system |
| JP5252613B2 (ja) * | 2006-12-25 | 2013-07-31 | 国立大学法人東北大学 | イオン注入装置およびイオン注入方法 |
| KR101173268B1 (ko) * | 2007-03-29 | 2012-08-10 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
| JPWO2008153053A1 (ja) * | 2007-06-11 | 2010-08-26 | 東京エレクトロン株式会社 | プラズマ処理装置、給電装置およびプラズマ処理装置の使用方法 |
| DE112008001548B4 (de) * | 2007-06-11 | 2013-07-11 | Tokyo Electron Ltd. | Plasmabearbeitungsvorrichtung und Plasmabearbeitungsverfahren |
| US8568556B2 (en) * | 2007-06-11 | 2013-10-29 | Tokyo Electron Limited | Plasma processing apparatus and method for using plasma processing apparatus |
| JP2008305736A (ja) * | 2007-06-11 | 2008-12-18 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理装置の使用方法およびプラズマ処理装置のクリーニング方法 |
| US20080303744A1 (en) * | 2007-06-11 | 2008-12-11 | Tokyo Electron Limited | Plasma processing system, antenna, and use of plasma processing system |
| JP5058727B2 (ja) * | 2007-09-06 | 2012-10-24 | 東京エレクトロン株式会社 | 天板構造及びこれを用いたプラズマ処理装置 |
| CN102057762A (zh) * | 2008-06-11 | 2011-05-11 | 东京毅力科创株式会社 | 等离子体处理装置及等离子体处理方法 |
| JP5213530B2 (ja) * | 2008-06-11 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5421551B2 (ja) * | 2008-06-11 | 2014-02-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
| JP5222744B2 (ja) * | 2009-01-21 | 2013-06-26 | 国立大学法人東北大学 | プラズマ処理装置 |
| KR101930230B1 (ko) * | 2009-11-06 | 2018-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
| JP5483245B2 (ja) * | 2012-02-17 | 2014-05-07 | 国立大学法人東北大学 | プラズマ処理装置およびプラズマ処理方法 |
| US9343291B2 (en) * | 2013-05-15 | 2016-05-17 | Tokyo Electron Limited | Method for forming an interfacial layer on a semiconductor using hydrogen plasma |
-
2008
- 2008-06-11 JP JP2008153379A patent/JP5520455B2/ja active Active
-
2009
- 2009-06-03 CN CN201210243672.6A patent/CN102760633B/zh active Active
- 2009-06-03 KR KR1020107024030A patent/KR101202270B1/ko active Active
- 2009-06-03 WO PCT/JP2009/060159 patent/WO2009150979A1/ja not_active Ceased
- 2009-06-03 CN CN2009801214626A patent/CN102057465A/zh active Pending
- 2009-06-03 US US12/997,211 patent/US9196460B2/en active Active
- 2009-06-09 TW TW098119217A patent/TW201015653A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI602213B (zh) * | 2012-10-09 | 2017-10-11 | Tokyo Electron Ltd | Plasma processing method, and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102760633A (zh) | 2012-10-31 |
| WO2009150979A1 (ja) | 2009-12-17 |
| US20110180213A1 (en) | 2011-07-28 |
| CN102057465A (zh) | 2011-05-11 |
| JP2009302205A (ja) | 2009-12-24 |
| US9196460B2 (en) | 2015-11-24 |
| KR20100126571A (ko) | 2010-12-01 |
| CN102760633B (zh) | 2015-09-02 |
| KR101202270B1 (ko) | 2012-11-16 |
| JP5520455B2 (ja) | 2014-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201015653A (en) | Plasma processing apparatus and plasma processing method | |
| JP5328685B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| KR101117150B1 (ko) | 플라즈마 처리 장치 및 처리 방법 | |
| US6417111B2 (en) | Plasma processing apparatus | |
| CN101978095B (zh) | 同轴型微波辅助沉积与蚀刻系统 | |
| US6344420B1 (en) | Plasma processing method and plasma processing apparatus | |
| KR101183047B1 (ko) | 플라즈마 처리 장치 | |
| JP4502639B2 (ja) | シャワープレート、プラズマ処理装置、及び、製品の製造方法 | |
| US20090311869A1 (en) | Shower plate and manufacturing method thereof, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate | |
| WO2002080249A1 (en) | Plasma processing device | |
| US20110240598A1 (en) | Plasma processing apparatus and plasma processing method | |
| CN100495654C (zh) | 等离子体处理装置和等离子体处理装置用的电极板和电极板制造方法 | |
| WO2005067022A1 (ja) | シャワープレート、プラズマ処理装置、及び製品の製造方法 | |
| TW201112884A (en) | Plasma processing apparatus | |
| JP2002299331A (ja) | プラズマ処理装置 | |
| US20130000847A1 (en) | Plasma processing apparatus | |
| JPH08325759A (ja) | 表面処理装置 | |
| WO2013116840A2 (en) | Gas dispersion plate for plasma reactor having extended lifetime | |
| JPH11236676A (ja) | 常圧放電プラズマ処理方法 | |
| JP4304280B2 (ja) | プラズマ生成装置およびプラズマ処理製造方法 | |
| JP6926632B2 (ja) | 表面処理装置および表面処理方法 | |
| JP2001220668A (ja) | 基板処理装置及び基板処理方法、並びにそれを用いて製作された薄膜デバイス | |
| JP2007317501A (ja) | 大気圧プラズマ処理装置 | |
| JP2013239415A (ja) | プラズマ発生ユニット及び表面波励起プラズマ処理装置 | |
| JP2004235430A (ja) | プラズマ発生装置 |