JP5489387B2 - 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス - Google Patents

能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス Download PDF

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JP5489387B2
JP5489387B2 JP2005508542A JP2005508542A JP5489387B2 JP 5489387 B2 JP5489387 B2 JP 5489387B2 JP 2005508542 A JP2005508542 A JP 2005508542A JP 2005508542 A JP2005508542 A JP 2005508542A JP 5489387 B2 JP5489387 B2 JP 5489387B2
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ブード，ジェフリー，デヴン
キャロル，マルコルム
キング，クリフォード，アラン
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ノーブル ピーク ヴィジョン コーポレーション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005508542A 2002-12-18 2003-11-26 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス Expired - Fee Related JP5489387B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US60/434,359 2002-12-18
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes
US10/453,037 2003-06-03
PCT/US2003/037786 WO2004061911A2 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

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JP2011138418A Division JP2011238942A (ja) 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

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JP2006513584A JP2006513584A (ja) 2006-04-20
JP2006513584A5 JP2006513584A5 (https=) 2006-11-24
JP5489387B2 true JP5489387B2 (ja) 2014-05-14

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JP2011138418A Pending JP2011238942A (ja) 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

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US (2) US7012314B2 (https=)
EP (1) EP1573790B1 (https=)
JP (2) JP5489387B2 (https=)
KR (1) KR20050093785A (https=)
AU (1) AU2003303492A1 (https=)
DE (1) DE60310762T2 (https=)
TW (1) TWI232544B (https=)
WO (1) WO2004061911A2 (https=)

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AU2003303492A8 (en) 2004-07-29
JP2006513584A (ja) 2006-04-20
US20060057825A1 (en) 2006-03-16
EP1573790A2 (en) 2005-09-14
DE60310762D1 (de) 2007-02-08
TW200419721A (en) 2004-10-01
TWI232544B (en) 2005-05-11
JP2011238942A (ja) 2011-11-24
DE60310762T2 (de) 2007-10-11
WO2004061911A8 (en) 2005-08-25
US7297569B2 (en) 2007-11-20
WO2004061911A3 (en) 2004-09-16
EP1573790B1 (en) 2006-12-27
AU2003303492A1 (en) 2004-07-29
US7012314B2 (en) 2006-03-14
WO2004061911A2 (en) 2004-07-22
US20040121507A1 (en) 2004-06-24
KR20050093785A (ko) 2005-09-23

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