JP5489387B2 - 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス - Google Patents

能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス Download PDF

Info

Publication number
JP5489387B2
JP5489387B2 JP2005508542A JP2005508542A JP5489387B2 JP 5489387 B2 JP5489387 B2 JP 5489387B2 JP 2005508542 A JP2005508542 A JP 2005508542A JP 2005508542 A JP2005508542 A JP 2005508542A JP 5489387 B2 JP5489387 B2 JP 5489387B2
Authority
JP
Japan
Prior art keywords
region
opening
cladding
pixel
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005508542A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006513584A5 (https=
JP2006513584A (ja
Inventor
ブード，ジェフリー，デヴン
キャロル，マルコルム
キング，クリフォード，アラン
Original Assignee
ノーブル ピーク ヴィジョン コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ノーブル ピーク ヴィジョン コーポレーション filed Critical ノーブル ピーク ヴィジョン コーポレーション
Publication of JP2006513584A publication Critical patent/JP2006513584A/ja
Publication of JP2006513584A5 publication Critical patent/JP2006513584A5/ja
Application granted granted Critical
Publication of JP5489387B2 publication Critical patent/JP5489387B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005508542A 2002-12-18 2003-11-26 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス Expired - Fee Related JP5489387B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US60/434,359 2002-12-18
US10/453,037 2003-06-03
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes
PCT/US2003/037786 WO2004061911A2 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011138418A Division JP2011238942A (ja) 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

Publications (3)

Publication Number Publication Date
JP2006513584A JP2006513584A (ja) 2006-04-20
JP2006513584A5 JP2006513584A5 (https=) 2006-11-24
JP5489387B2 true JP5489387B2 (ja) 2014-05-14

Family

ID=32600178

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005508542A Expired - Fee Related JP5489387B2 (ja) 2002-12-18 2003-11-26 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス
JP2011138418A Pending JP2011238942A (ja) 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011138418A Pending JP2011238942A (ja) 2002-12-18 2011-06-22 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス

Country Status (8)

Country Link
US (2) US7012314B2 (https=)
EP (1) EP1573790B1 (https=)
JP (2) JP5489387B2 (https=)
KR (1) KR20050093785A (https=)
AU (1) AU2003303492A1 (https=)
DE (1) DE60310762T2 (https=)
TW (1) TWI232544B (https=)
WO (1) WO2004061911A2 (https=)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) * 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6946371B2 (en) * 2002-06-10 2005-09-20 Amberwave Systems Corporation Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US20060055800A1 (en) * 2002-12-18 2006-03-16 Noble Device Technologies Corp. Adaptive solid state image sensor
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7643755B2 (en) * 2003-10-13 2010-01-05 Noble Peak Vision Corp. Optical receiver comprising a receiver photodetector integrated with an imaging array
US7589380B2 (en) * 2002-12-18 2009-09-15 Noble Peak Vision Corp. Method for forming integrated circuit utilizing dual semiconductors
US6960781B2 (en) 2003-03-07 2005-11-01 Amberwave Systems Corporation Shallow trench isolation process
US7122392B2 (en) * 2003-06-30 2006-10-17 Intel Corporation Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
US7503706B2 (en) * 2003-09-05 2009-03-17 Sae Magnetics (Hong Kong) Limited MSM photodetector assembly
US7579263B2 (en) 2003-09-09 2009-08-25 Stc.Unm Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US6919258B2 (en) * 2003-10-02 2005-07-19 Freescale Semiconductor, Inc. Semiconductor device incorporating a defect controlled strained channel structure and method of making the same
ATE408961T1 (de) 2003-10-13 2008-10-15 Noble Peak Vision Corp Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensor
US7198970B2 (en) * 2004-01-23 2007-04-03 The United States Of America As Represented By The Secretary Of The Navy Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
US7186622B2 (en) 2004-07-15 2007-03-06 Infineon Technologies Ag Formation of active area using semiconductor growth process without STI integration
US20060073681A1 (en) * 2004-09-08 2006-04-06 Han Sang M Nanoheteroepitaxy of Ge on Si as a foundation for group III-V and II-VI integration
US7439542B2 (en) * 2004-10-05 2008-10-21 International Business Machines Corporation Hybrid orientation CMOS with partial insulation process
KR100641068B1 (ko) * 2005-01-21 2006-11-06 삼성전자주식회사 듀얼 다마신 채널 구조물과 그 제조 방법
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) * 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20060292719A1 (en) * 2005-05-17 2006-12-28 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
CN101268547B (zh) * 2005-07-26 2014-07-09 琥珀波系统公司 包含交替有源区材料的结构及其形成方法
US7459367B2 (en) 2005-07-27 2008-12-02 International Business Machines Corporation Method of forming a vertical P-N junction device
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
CN101326646B (zh) * 2005-11-01 2011-03-16 麻省理工学院 单片集成的半导体材料和器件
US20070252223A1 (en) * 2005-12-05 2007-11-01 Massachusetts Institute Of Technology Insulated gate devices and method of making same
US8530355B2 (en) * 2005-12-23 2013-09-10 Infineon Technologies Ag Mixed orientation semiconductor device and method
US7629661B2 (en) * 2006-02-10 2009-12-08 Noble Peak Vision Corp. Semiconductor devices with photoresponsive components and metal silicide light blocking structures
US7901968B2 (en) * 2006-03-23 2011-03-08 Asm America, Inc. Heteroepitaxial deposition over an oxidized surface
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US7485524B2 (en) * 2006-06-21 2009-02-03 International Business Machines Corporation MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the same
US8063397B2 (en) * 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
WO2008036256A1 (en) * 2006-09-18 2008-03-27 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
WO2008039495A1 (en) * 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
US8871554B2 (en) * 2007-10-30 2014-10-28 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating butt-coupled electro-absorptive modulators
US7723206B2 (en) * 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode
JP5669359B2 (ja) * 2008-03-01 2015-02-12 住友化学株式会社 半導体基板、半導体基板の製造方法および電子デバイス
CN101952937B (zh) * 2008-03-01 2012-11-07 住友化学株式会社 半导体基板、半导体基板的制造方法及电子装置
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8084739B2 (en) 2008-07-16 2011-12-27 Infrared Newco., Inc. Imaging apparatus and methods
US8686365B2 (en) * 2008-07-28 2014-04-01 Infrared Newco, Inc. Imaging apparatus and methods
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102171790A (zh) * 2008-10-02 2011-08-31 住友化学株式会社 半导体基板、电子器件、以及半导体基板的制造方法
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
KR20120022872A (ko) * 2009-05-22 2012-03-12 스미또모 가가꾸 가부시키가이샤 반도체 기판, 전자 디바이스, 반도체 기판의 제조 방법 및 전자 디바이스의 제조 방법
WO2010140373A1 (ja) * 2009-06-05 2010-12-09 住友化学株式会社 センサ、半導体基板、および半導体基板の製造方法
JP5414415B2 (ja) 2009-08-06 2014-02-12 株式会社日立製作所 半導体受光素子及びその製造方法
SG169922A1 (en) * 2009-09-24 2011-04-29 Taiwan Semiconductor Mfg Improved semiconductor sensor structures with reduced dislocation defect densities and related methods for the same
US8741684B2 (en) * 2011-05-09 2014-06-03 Imec Co-integration of photonic devices on a silicon photonics platform
US8546250B2 (en) 2011-08-18 2013-10-01 Wafertech Llc Method of fabricating vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
US9709740B2 (en) * 2012-06-04 2017-07-18 Micron Technology, Inc. Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US9213137B2 (en) * 2013-07-12 2015-12-15 Globalfoundries Singapore Pte. Ltd. Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same
WO2015016942A1 (en) * 2013-08-02 2015-02-05 Intel Corporation Low voltage photodetectors
US10096474B2 (en) 2013-09-04 2018-10-09 Intel Corporation Methods and structures to prevent sidewall defects during selective epitaxy
EP3042390A4 (en) * 2013-09-04 2017-04-12 Intel Corporation Methods and structures to prevent sidewall defects during selective epitaxy
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
US9748307B2 (en) 2014-11-13 2017-08-29 Artilux Inc. Light absorption apparatus
KR102284657B1 (ko) 2015-01-05 2021-08-02 삼성전자 주식회사 포토 다이오드 및 이를 포함하는 광통신 시스템
KR102279162B1 (ko) * 2015-03-03 2021-07-20 한국전자통신연구원 게르마늄 온 인슐레이터 기판 및 그의 형성방법
US9786715B2 (en) 2015-07-23 2017-10-10 Artilux Corporation High efficiency wide spectrum sensor
US9917189B2 (en) * 2015-07-31 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for detecting presence and location of defects in a substrate
US10707260B2 (en) 2015-08-04 2020-07-07 Artilux, Inc. Circuit for operating a multi-gate VIS/IR photodiode
TWI723890B (zh) 2015-08-04 2021-04-01 光澄科技股份有限公司 製造影像感測陣列之方法
US10861888B2 (en) 2015-08-04 2020-12-08 Artilux, Inc. Silicon germanium imager with photodiode in trench
US10761599B2 (en) 2015-08-04 2020-09-01 Artilux, Inc. Eye gesture tracking
EP3341970B1 (en) 2015-08-27 2020-10-07 Artilux Inc. Wide spectrum optical sensor
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
US10741598B2 (en) 2015-11-06 2020-08-11 Atrilux, Inc. High-speed light sensing apparatus II
US10739443B2 (en) 2015-11-06 2020-08-11 Artilux, Inc. High-speed light sensing apparatus II
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
IL242952B (en) 2015-12-06 2021-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Photodetector-arrays and methods of fabrication thereof
GB2549951B (en) * 2016-05-03 2019-11-20 Metodiev Lavchiev Ventsislav Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range
US20170350752A1 (en) * 2016-06-01 2017-12-07 Ventsislav Metodiev Lavchiev Light emitting structures and systems on the basis of group iv material(s) for the ultraviolet and visible spectral ranges
GB2552264B (en) * 2016-07-13 2021-06-02 Rockley Photonics Ltd Integrated structure and manufacturing method thereof
TWI788246B (zh) 2018-02-23 2022-12-21 美商光程研創股份有限公司 光偵測裝置
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
US10886311B2 (en) 2018-04-08 2021-01-05 Artilux, Inc. Photo-detecting apparatus
US10854770B2 (en) 2018-05-07 2020-12-01 Artilux, Inc. Avalanche photo-transistor
US10969877B2 (en) 2018-05-08 2021-04-06 Artilux, Inc. Display apparatus
JP6836547B2 (ja) * 2018-05-21 2021-03-03 日本電信電話株式会社 光検出器
US10861896B2 (en) 2018-07-27 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Capping structure to reduce dark current in image sensors
WO2023059548A1 (en) * 2021-10-06 2023-04-13 Analog Devices Inc. Monolithic multi-wavelength optical devcies
EP4167269A1 (en) * 2021-10-15 2023-04-19 Infineon Technologies AG Heteroepitaxial semiconductor device and method for fabricating a heteroepitaxial semiconductor device
US20240347561A1 (en) * 2022-11-10 2024-10-17 The Board Of Trustees Of The University Of Arkansas Visible to longwave infrared photodetector on silicon

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177742A (ja) * 1985-02-01 1986-08-09 Mitsubishi Electric Corp 半導体装置
JPS63216386A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 半導体受光装置
JPH01184878A (ja) * 1988-01-13 1989-07-24 Mitsubishi Electric Corp 横型ｐｉｎフオトダイオードの製造方法
JPH03125458A (ja) * 1989-10-11 1991-05-28 Canon Inc 単結晶領域の形成方法及びそれを用いた結晶物品
US5162891A (en) * 1991-07-03 1992-11-10 International Business Machines Corporation Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same
KR100259063B1 (ko) 1992-06-12 2000-06-15 김영환 Ccd 영상소자
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
US6057586A (en) * 1997-09-26 2000-05-02 Intel Corporation Method and apparatus for employing a light shield to modulate pixel color responsivity
JP3501265B2 (ja) * 1997-10-30 2004-03-02 富士通株式会社 半導体装置の製造方法
JP2002505519A (ja) 1998-02-27 2002-02-19 ノース・キャロライナ・ステイト・ユニヴァーシティ マスクを通過する横方向のオーバーグロースによる窒化ガリウム半導体層を製造する方法及びそれによって製造された窒化ガリウム半導体の構造体
US6500257B1 (en) * 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
JP4032538B2 (ja) 1998-11-26 2008-01-16 ソニー株式会社 半導体薄膜および半導体素子の製造方法
JP3824446B2 (ja) * 1999-05-28 2006-09-20 シャープ株式会社 固体撮像装置の製造方法
US6396046B1 (en) 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
JP3455512B2 (ja) * 1999-11-17 2003-10-14 日本碍子株式会社 エピタキシャル成長用基板およびその製造方法
TW494574B (en) 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP3827909B2 (ja) 2000-03-21 2006-09-27 シャープ株式会社 固体撮像装置およびその製造方法
GB0014961D0 (en) * 2000-06-20 2000-08-09 Koninkl Philips Electronics Nv Light-emitting matrix array display devices with light sensing elements
JP3912024B2 (ja) * 2001-04-09 2007-05-09 セイコーエプソン株式会社 Ｐｉｎ構造のラテラル型半導体受光素子
JP2002314116A (ja) * 2001-04-09 2002-10-25 Seiko Epson Corp Ｐｉｎ構造のラテラル型半導体受光素子
GB0111207D0 (en) 2001-05-08 2001-06-27 Btg Int Ltd A method to produce germanium layers
JP4375517B2 (ja) * 2001-07-23 2009-12-02 日本電気株式会社 液晶表示装置
US7248297B2 (en) * 2001-11-30 2007-07-24 The Board Of Trustees Of The Leland Stanford Junior University Integrated color pixel (ICP)
US6835954B2 (en) * 2001-12-29 2004-12-28 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescent display device
US7098069B2 (en) * 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
TW546853B (en) * 2002-05-01 2003-08-11 Au Optronics Corp Active type OLED and the fabrication method thereof

Also Published As

Publication number Publication date
EP1573790B1 (en) 2006-12-27
TW200419721A (en) 2004-10-01
WO2004061911A8 (en) 2005-08-25
EP1573790A2 (en) 2005-09-14
US7297569B2 (en) 2007-11-20
KR20050093785A (ko) 2005-09-23
US7012314B2 (en) 2006-03-14
JP2006513584A (ja) 2006-04-20
DE60310762T2 (de) 2007-10-11
JP2011238942A (ja) 2011-11-24
WO2004061911A3 (en) 2004-09-16
WO2004061911A2 (en) 2004-07-22
US20060057825A1 (en) 2006-03-16
US20040121507A1 (en) 2004-06-24
AU2003303492A8 (en) 2004-07-29
TWI232544B (en) 2005-05-11
AU2003303492A1 (en) 2004-07-29
DE60310762D1 (de) 2007-02-08

Similar Documents

Publication Publication Date Title
JP5489387B2 (ja) 能動領域の欠陥が低減されユニークな接触スキームを有する半導体デバイス
US7915653B2 (en) Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
US7075165B2 (en) Embedded waveguide detectors
US7151881B2 (en) Impurity-based waveguide detectors
JP5917978B2 (ja) 半導体装置及びその製造方法
KR100244048B1 (ko) 광반도체 장치 및 그의 제조방법
US20070104411A1 (en) Vertically-integrated waveguide photodetector apparatus and related coupling methods
JP6091273B2 (ja) 半導体装置とその製造方法
US7132656B2 (en) High speed and high efficiency Si-based photodetectors using waveguides formed with silicide for near IR applications
EP0709901B1 (en) Fabrication process for a silicon photosensitive element
US7180648B2 (en) Electro-absorption modulator device and methods for fabricating the same
JP2014183194A (ja) 半導体装置の製造方法
EP1746638A2 (en) Semiconductor devices with reduced active region defectcs and unique contacting schemes
JP2003031790A (ja) 半導体装置およびその製造方法
US5449945A (en) Silicon metal-semiconductor-metal photodetector
CN210325799U (zh) 一种光集成器件结构
Lin Quantum efficiency enhancement of germanium-on-insulator photodetectors for integrated photonics on silicon
Sahni Highly integrated germanium photo-detectors and III-V hybrid lasers for silicon photonic applications
WO2016021057A1 (ja) 半導体光素子及び半導体光素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060927

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060927

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20081112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20081112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101222

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110322

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120229

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120531

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120607

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120927

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121227

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130327

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131202

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140109

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140225

R150 Certificate of patent or registration of utility model

Ref document number: 5489387

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees