GB2549951B - Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range - Google Patents
Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range Download PDFInfo
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- GB2549951B GB2549951B GB1607684.6A GB201607684A GB2549951B GB 2549951 B GB2549951 B GB 2549951B GB 201607684 A GB201607684 A GB 201607684A GB 2549951 B GB2549951 B GB 2549951B
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- 239000000463 material Substances 0.000 title claims description 49
- 230000003595 spectral effect Effects 0.000 title description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 38
- 230000005284 excitation Effects 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052732 germanium Inorganic materials 0.000 claims description 23
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229940119177 germanium dioxide Drugs 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910002616 GeOx Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 241000237519 Bivalvia Species 0.000 claims 1
- 229910020169 SiOa Inorganic materials 0.000 claims 1
- 235000020639 clam Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 238000010586 diagram Methods 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910025794 LaB6 Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910003930 SiCb Inorganic materials 0.000 description 1
- -1 SiOo.5 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Lasers (AREA)
Description
LIGHT EMITTING STRUCTURES AND SYSTEMS ON THE BASIS OF GROUP-IV MATERIAL(S) FOR THE ULTRAVIOLET AND VISIBLE SPECTRAL RANGES
FIEILD
The present disclosure generally relates to emission of light by highly crystalline materials, structures and devices fabricated and designed in a specific manner allowing for such light emission. The light emission, taking place in the ultraviolet UV and visible spectral ranges, is linked to bulk and surface plasmon polaritons in the materials and their interfaces, to the intraband and interband transitions of the electrons and holes in the valence band and conduction band, to the coupling between the surface plasmon polaritons and the particles generated in the intraband and interband transitions. The light emission is further linked to the oxygen related states on the Si and Ge interfaces with their oxides. The light emission, however, cannot happen without the presence of at least one of the following quasiparticles: surface plasmons, surface plasmon polaritons, bulk plasmons and/or bulk plasmon polaritons.
BACKGROUND
[0001] Light emitters are material, structures or devices capable of emission of light when voltage or light of another wavelength or electron beam is applied to them. One type of light emitters is the emitters of visible light such as broadband lamps sources (in terms of spectral width of the emission). Another type of light emitter emits narrow spectral light such as light emitting diodes (LED), organic LED (OLED). Another type of light source is the laser, which is an emitter of coherent, narrow spectral light. Yet another type of emitters can emit light in ultra-violet or infrared spectral ranges.
[0002] The light emitters have a broad range of applications - for lighting, in TV screens, automobiles, data transmission, computers, radars, decoration, military, entertaining industry, night vision, sensor technologies, traffic control, in manufacturing or control in the manufacturing processes.
[0003] All existing to date light emitters are characterized by at least one of the following features - high power consumption, relatively high price, requirement of special technology for fabrication, use of relatively expensive materials for fabrication or non-compatibility to the silicon (Si)-based technology.
[0004] However, a light source based on a group-IV material - silicon (Si), germanium (Ge), tin (Sn), lead (Pb), carbon (C, for instance silicon carbide SiC), erbium (Er) or a combination of them - would bring enormous advantages for the Si-based industry and related industries.
[0005] The present invention is an efficient light emitter based on Si or Ge or combination of them or combination of these materials with their oxides or combination of them with antimony (Sb) or any doping.
BRIEF DESCRIPTION OF THE DRAWINGS
The following is a brief description of the figures wherein the definitions “material structure” and “structure” are equal. All the materials are to be understood as highly crystalline or monocrystalline.
[0007] Fig. 1 is a diagram, illustrating a material structure composed of simply bulk monocrystalline Si.
[0008] Fig. 2A is a diagram illustrating a two-layer structure Ge/Si.
[0009] Fig. 2B is a diagram illustrating a two-layer structure SiO/Si.
[0010] Fig. 2C is a diagram illustrating a two-layer structure SiO2/Si.
[0011] Fig. 3A is a diagram illustrating a two-layer structure Ge/SiOo.5.
[0012] Fig. 3B is a diagram illustrating a two-layer structure Si/SiOo.s- [0013] Fig. 4A is a diagram illustrating a two-layer structure Ge/SiO.
[0014] Fig.4B is a illustrating a two-layer structure Si/SiO.
[0015] Fig. 5A is a diagram illustrating a two-layer structure Ge/SiO2.
[0016] Fig. 5B is a diagram illustrating a two-layer structure Si/SiO2.
[0017] Fig. 6A is a diagram illustrating a two-layer structure GeO/Ge.
[0018] Fig. 6B is a diagram illustrating a two-layer structure GeO2/Ge.
[0019] Fig, 7 is a diagram of a multilayer structure consisting of any combination of the above mentioned materials.
[0020] Fig. 8A is a diagram of a device based on one or more of the above mentioned materials. The diagram illustrates a device capable of light emission in UV, violet or visible spectral range when excitation of the structure by electrical mean i.e. bias is applied.
[0021] Fig. 8B is a diagram of a device based on one or more of the above mentioned materials. The diagram illustrates a device capable of light emission in UV, violet or visible spectral range when excitation of the structure by optical mean i.e. by light is applied.
[0022] Fig. 8C is a diagram of a device based on one or more of the above mentioned materials. The diagram illustrates a device capable of light emission in UV, violet or visible spectral range when excitation of the structure by electron beam is applied.
[0023] Optical excitation or excitation by bias can be applied to a multilayer structure (Fig. 7) in the similar way as in Fig. 8A or Fig. 8B.
[0024] Fig. 9 is a diagram illustrating a device, in which one of the above mentioned structures is placed in a resonator or a cavity for light amplification.
DETAILED DESCRIPTION
[0025] The present invention will now be described with reference to the attached drawing figures, wherein like reference numerals are used to refer to like elements throughout, and wherein the illustrated structures and devices are not necessarily drawn to scale.
[0026] The light emitters in the present invention are based on a singlelayer or bi-layer or a multi-layer material structure. The materials are monocrystalline, where applicable. The structure emits UV or visible light when excited electrically, optically or by an electron beam. The size, shape and composition of the materials forming the structure(s) can be varied or adjusted to form different devices, properties or features.
[0027] Fig. 1 is a diagram illustrating a structure from bulk monocrystalline Si. The Si can be intrinsic or doped. The structure is capable of UV/visible light emission under electrical or optical excitation or under excitation by an electron beam.
[0028] The bi-layer structures illustrated in Fig. 2A, Fig. 2B, Fig. 2C, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B, Fig. 5A, Fig. 5B, Fig. 6A and Fig. 6B are capable of UV and/or visible light emission under electrical excitation (electroluminescence) or optical excitation (photoluminescence) or under excitation by an electron beam (cathodo-luminescence). The structures are composed of monocrystalline Si (undoped or doped), monocrystalline Ge (undoped or doped) and their oxides in combinations as depicted in the figures.
[0029] Fig. 7 is a diagram illustrating a multilayer structure composed of any combination of the following materials - Si, Ge, SiO, S1O2, SiOo.5, SiOx, where 0<x<1. Any layer of the multi-layer structure can be intrinsic or doped. [0030] The doping can be p-type or n-type such as B (boron), Sb (antimony), P (phosphorous) or else. The doping is important for light emission even in the case of excitation of the structure(s) by optical beam or by electron beam. The doping changes the dielectric constant of the material, which in turn changes the spectral position of the plasmon and the plasmon polariton.
[0031] Fig. 8A is a diagram illustrating electrical excitation f a single-layer or bi-layer or multi-layer structure. The electrical excitation is done by means of application of bias. Electrode layers are deposited on both sides of the structure. The bias is applied to the electrodes. A barrier layer can be deposited between the electrode layer and the light emitting layer. In one example, the structure under electrical excitations is composed of the following layers ordered in a strict order: Cs (cesium) or Au (gold) electrode layer/ emitting material/l_aGdO3 barrier layer/ LaB6 electrode layer. In another example, the structure under electrical excitations is composed of the following layers ordered in a strict order: Cs (cesium) or Au (gold) electrode layer/ emitting material/LaBaO3 barrier layer/ LaB6 electrode layer. The metals Cs and Au are selected due to their low work functions necessary in the electric excitation. In another example, other materials can be used as electrode layers and barrier layer. Unlike the conventional p-n, p-i-n or other junctions known to date, the presented structures in Fig. 7A generates light also by undoped materials and only when surface or/and bulk plasmons or plasmon polaritons are present (generated) in the material(s).
[0032] The generation of the surface plasmons, surface plasmon polaritons, bulk plasmons and/or bulk plasmon polaritons occurs simultaneously with the excitation bias/beam.
[0033] Fig. 8B is a sketch showing excitation of the structure by optical mean. In one example, the excitation source is a light source of a smaller wavelength as comparison to the wavelength of the emission from the structure (AeXcitation<Aemission)· In another example, the excitation source is a broad band light source.
[0034] Fig. 8C is a sketch showing excitation of the structure by an electron beam. The structure is capable of light emission of UV and visible light under bombardment of the material (structure) by an electron beam. An electrode layer/structure can be deposited on the back surface or/and the front surface of the structure required for this type of excitation. In another example, the material structure is placed on a metal support playing the role of the electrode. Yet in another example, the electrode may be placed away from the material structure. The purpose of the electrode is to accelerate the electron beam (emitted from a cathode electrode) toward the material structure.
[0035] Fig. 9 illustrates a device, wherein the emitting structure named “material system” is placed in a resonator or a cavity. The purpose of the resonator/the cavity is to amplify the light emitted from the structure. The device also includes one or more additional units such as a control unit, a power supply unit and a readout unit. Additional unit may be the excitation source.
[0036] The material system in Fig. 8C and Fig. 9 may be placed in vacuum environment.
Embodiments of the present invention provide a system comprising: a material structure comprising one or more monocrystalline or annealed polycrystaliine layers oi the following structures able to emit ultra violet or visible light.
Silicon (Si); German-um/Silicon (Ge/Si),
Silicon rnonoxide/Sliicon (SiO/SI) Silicon dioxide/Silicon (SiCs/Si), Gerrnanium/Sliiconoxlde 0.5 (Ge/SiOo.5),
Siiicon/Silicon oxide 0.5 (Si/SiOo.s) Germanium/SHiCon monoxide (Ge/SIO), Slliccn/SHicon monoxide (SI/SIO) Germanlum/Siiicon dioxide (Ge/SiCb), Sllicon/Siliccn dioxide (Si/SI02) Germanium oxide/Germanium (GeO/Ge), Germanium dioxide/Germaniurn (GeOi'Ge),
Any phase ci the oxide SiOx In interface with Si or Ge, where 0sxs1, and Any phase of the oxide GeOx in interface With SI or Ge; where 0£xs1; and a source unit configured to excite the materia! structure to generate one or more of the following quasi-particles in the material structure·, surface piasmons, surface piasrnon polarifons, bulb piasmons and/or bulk piasrnon pclaritons.
In embodiments: the system comprises a material system including one or more such iayers/bi-iayers ;n combination with metal layers or metal structures and barrier layers for electrical excitation, wherein the meta! layers or structures are on one side of the materia! system or on both sides of the material system and serve as electrodes, wherein the barrier layer is a layer, usually a dielectric or semiconductor material, building a band offset with the neighbouring metal layer ano a layer of the such a materia! structure.
In embodiments, the source unit is configured to supply voltage to the active unit or to supply current to the active unit, in embodiments, the the light source unit supplies excitation light With a broad band spectrum partially containing UV light or supplies excitation light of narrow band such as a light emitting diode (LED) or a laser diode or a laser of another type. In embodiments, the the source unit supplies an electron beam for excitation of the structure, in embodiments, the system further comprises a defector unit which detects the emitted UV or visible light, and a passive unit which captures the light from the active unrt and makes use of It or guides the emitted light to the detector unit
In embodiments, the system further comprises a resonator or a cavity to amplify the emitted light, wherein the system may include one or more units from the following: a power supply unit, a control unit and a readout unit. In embodiments, the system Is incorporated in a vacuum environment.
Embodiments provide a method of emitting light using a material structure comprising one or more monocrystalline or annealed polycrystalline layers of the following structures able to emit ultra-violet or visible light:
Silicon (SI): Germanium/SiNeon (Ge/Si),
Silicon monoxide/Silicon (SIQ/Si) Silicon dloxide/Silicon (SiOz/Si),
Germanium/Siiiconoxide 0.5 (Ge/SiOo.5),
Silicon/Silicon oxide 0.5 (Si/SIOe.s) Germanium/Siiicon monoxide (Ge/SsO),
Silicon/Silicon monoxide (Si/SiO) Germanium/Siiicon dioxide (Ge/SiOz).
Silicon/Silicon dioxide (Si/SiOz) Germanium oxide/Germanium (GeO/Ge),
Germanium dioxide/Germanium (GeOz/Ge). any phase of the oxide SlOx in interface with Si or Ge, where 0sx<i, and any phase of the oxide GeOx in interface with Si or Ge, where 0<x<1, the method comprising the step of: exciting the material structure to generate one or more of the following quasi-particles in the material structure in order to assist the emission of light: surface plasmons. surface plasmon polaritons, bulk plasmons and/or bulk plasmon polaritons.
Claims (9)
1. A system comprising; a materiel structure comprising one or mere monocrystailine or annealed polycrystalline layers of the following structures able to emit ultra-· violet or visible light: Silicon (Si); Germanlum/Siliccn (Ge/Si), Silicon monoxide/Siiicon (SIO/SI) Silicon dloxide/Siiieon (SsOz/Si), Germanlum.'Siliconoxide 0.5 (Ge/SIOo.5), Sillcon/Silicon oxide 0.5 (Si/SiOo.s) Germanium/Silicen monoxide (Ge/SIO), Sillcon/Silicon monoxide (Si/SiO) Germanlum/Silicon dioxide (Ge/SIO?), Sillcon/Silicon dioxide (Si/SiOa) Germanium oxide/Germanlum (GeO/Ge). Germanium dioxide/Germanium (Ge0?/Ge), Any phase of the oxide SlOx in interface with Si or Ge, where Osxsl, and Any phase of the oxide GeOx in interface with Si or Ge, where Osxsl; and a source unit configured to excite the material structure to generate one or more of the following quasi-particles in the material structure: surface piasmons, surface plasmon poiaritons, bulk piasmons and/or bulk plasmon poiaritons.
2. The system of claim 1. comprising a material system including one or more layers/bi-layers of claim 1 in combination with metal layers or metal structures and barrier layers for electrical excitation, wherein the metal layers or structures are on one side of the material system or on both sides of the material system and serve as electrodes, wherein the barrier layer is a layer, usually a dielectric or semiconductor material, building a band offset with the neighbouring metal layer and a layer of the material structure of claim 1.
3. The system of claim 1, wherein the source unit is configured to supply voltage to the active unit or to supply current to the material structure.
4. The system of claim 1, wherein the light source unit supplies excitation light with a spectrum partially containing UV light or supplies excitation light of narrow'· band such as a light emitting diode (LED) or a laser diode or a laser of another type.
5. The system of claim 1, wherein the source unit supplies an electron beam for excitation of the structure
6. The system of one of claims 3, 4 and 5, further comprising: a detector unit which detects the emitted UV or visible light, and a passive unit, which captures the light from the material structure and makes use of it or guides the emitted light to the detector unit;
7. The system of claims 1, 2, 3 or 4 further comprising a resonator or a cavity to amplify the· emitted light, wherein the system may include one or more units from the following: a power supply unit, a control unit and a readout unit.
S. The system of one of claims 1 through 7 wherein the system is incorporated in a vacuum environment.
9. A method of emitting light using a material structure comprising one or more monocrystalline or annealed polycrystailine layers of the following structures able to emit ultra-violet or visible light: Silicon (Si); Germanium/Silicon (Ge/Si), Silicon rnonoxide/silicon (SiO/Si) Silicon dioxide/Silicon (Si02/Si), Germanium/Siliconoxide 0.5 (Ge.'SiOo.S), Sllicon/Silicon oxide 0.5 (Si/SiOo.s) Germanium/Silicon monoxide (Ge/SiO), Sllicon/Silicon monoxide (Si/SiO) Germanium/Silicon dioxide (Ge/SiOj), Sllicon/Silicon dioxide (Si/SIO?) Germanium oxide/Germanlum (GeG/Ge), Germanium dioxide/Germanlum (GeCVGe), any phase of the oxide SlOx in interface with SI or Ge, where 0^x<1, and any phase of the oxide GeOx in Interface with Si or Ge. where 0<xd1, the method comprising the step of: exciting the matenal structure to generate one or more of the following quasi-particles in the material structure in order to assist the emission of light: surface plasmons, surface plasmon polarltons, bulk plasmons and/or bulk plasmon polarltons.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1607684.6A GB2549951B (en) | 2016-05-03 | 2016-05-03 | Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range |
| CN202010977556.1A CN112510123A (en) | 2016-05-03 | 2016-08-23 | One or more group IV material based light emitting structures and systems for the ultraviolet and visible spectral range |
| CN201610704567.6A CN107342350B (en) | 2016-05-03 | 2016-08-23 | One or more group IV material based light emitting structures and systems for the ultraviolet and visible spectral range |
| EP17162933.0A EP3242336A1 (en) | 2016-05-03 | 2017-03-24 | Light emitting structures and systems on the basis of group-iv materials for the ultraviolet and visible spectral ranges based on surface plasmons and surface plasmon polaritons |
| US16/531,606 US20190353519A1 (en) | 2016-05-03 | 2019-08-05 | Light emitting structures and systems on the basis of group iv material(s) for the ultraviolet and visible spectral ranges |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1607684.6A GB2549951B (en) | 2016-05-03 | 2016-05-03 | Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201607684D0 GB201607684D0 (en) | 2016-06-15 |
| GB2549951A GB2549951A (en) | 2017-11-08 |
| GB2549951B true GB2549951B (en) | 2019-11-20 |
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| Country | Link |
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| EP (1) | EP3242336A1 (en) |
| CN (2) | CN112510123A (en) |
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| CN110798286B (en) | 2018-08-03 | 2020-08-11 | 电信科学技术研究院有限公司 | Data retransmission method, device and terminal |
| CN112271441B (en) * | 2020-10-30 | 2023-04-07 | 北京维信诺光电技术有限公司 | Semiconductor device, manufacturing method thereof and antenna system |
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| US20110227116A1 (en) * | 2008-11-12 | 2011-09-22 | Hitachi, Ltd. | Light-emitting device, light-receiving device and method of manufacturing the same |
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| DE4345229C2 (en) * | 1993-09-30 | 1998-04-09 | Reinhard Dr Schwarz | Process for the production of luminescent element structures and element structures |
| FR2789517B1 (en) * | 1999-02-10 | 2001-03-09 | Commissariat Energie Atomique | METHOD FOR FORMING A SILICON LAYER FOR OPTICAL USE ON A SUPPORT AND IMPLEMENTATION OF THE METHOD FOR THE PRODUCTION OF OPTICAL COMPONENTS |
| JP3555500B2 (en) * | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Group III nitride semiconductor and method of manufacturing the same |
| EP1107044A1 (en) * | 1999-11-30 | 2001-06-13 | Hitachi Europe Limited | Photonic device |
| US6911084B2 (en) * | 2001-09-26 | 2005-06-28 | Arizona Board Of Regents | Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| US7012314B2 (en) * | 2002-12-18 | 2006-03-14 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
| US20050285128A1 (en) * | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
| JP2006261328A (en) * | 2005-03-16 | 2006-09-28 | Fujitsu Ltd | Capacitive element, manufacturing method thereof, and semiconductor device |
| JP2007319988A (en) * | 2006-06-01 | 2007-12-13 | National Institute For Materials Science | Method for manufacturing group iv semiconductor nanowire and structure control method |
| US8866007B2 (en) * | 2006-06-07 | 2014-10-21 | California Institute Of Technology | Plasmonic photovoltaics |
| KR101361129B1 (en) * | 2007-07-03 | 2014-02-13 | 삼성전자주식회사 | luminous device and method of manufacturing the same |
| KR100843426B1 (en) * | 2007-07-23 | 2008-07-03 | 삼성전기주식회사 | Light emitting device |
| WO2009118790A1 (en) * | 2008-03-27 | 2009-10-01 | 国立大学法人広島大学 | Light-emitting element and method for manufacturing the same |
| JP5051331B1 (en) * | 2011-02-28 | 2012-10-17 | パナソニック株式会社 | Infrared light emitting device manufacturing method |
| CN102231420A (en) * | 2011-06-28 | 2011-11-02 | 复旦大学 | Method for introducing extra nucleation points to silicon nanocrystalline film |
| WO2013010284A2 (en) * | 2011-07-19 | 2013-01-24 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
| DE102011084145A1 (en) * | 2011-10-07 | 2013-04-11 | Evonik Degussa Gmbh | Process for the preparation of high-performance and electrically stable, semiconducting metal oxide layers, layers produced by the process and their use |
| WO2015039618A1 (en) * | 2013-09-18 | 2015-03-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz source chip, light source device, light source assembly and manufacturing method thereof |
| EP2858117A1 (en) * | 2013-10-02 | 2015-04-08 | Nxp B.V. | Semiconductor device and method of manufacturing |
-
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- 2016-08-23 CN CN202010977556.1A patent/CN112510123A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020067419A1 (en) * | 1992-12-11 | 2002-06-06 | Shunsuke Inoue | Image display device, semiconductor device and optical equipment |
| US20110227116A1 (en) * | 2008-11-12 | 2011-09-22 | Hitachi, Ltd. | Light-emitting device, light-receiving device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201607684D0 (en) | 2016-06-15 |
| CN107342350A (en) | 2017-11-10 |
| CN112510123A (en) | 2021-03-16 |
| EP3242336A1 (en) | 2017-11-08 |
| CN107342350B (en) | 2020-10-20 |
| GB2549951A (en) | 2017-11-08 |
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