AU2003303492A1 - Semiconductor devices with reduced active region defects and unique contacting schemes - Google Patents

Semiconductor devices with reduced active region defects and unique contacting schemes

Info

Publication number
AU2003303492A1
AU2003303492A1 AU2003303492A AU2003303492A AU2003303492A1 AU 2003303492 A1 AU2003303492 A1 AU 2003303492A1 AU 2003303492 A AU2003303492 A AU 2003303492A AU 2003303492 A AU2003303492 A AU 2003303492A AU 2003303492 A1 AU2003303492 A1 AU 2003303492A1
Authority
AU
Australia
Prior art keywords
active region
semiconductor devices
reduced active
region defects
contacting schemes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003303492A
Other languages
English (en)
Other versions
AU2003303492A8 (en
Inventor
Jeffrey Devin Bude
Malcolm Carroll
Clifford Alan King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of AU2003303492A8 publication Critical patent/AU2003303492A8/xx
Publication of AU2003303492A1 publication Critical patent/AU2003303492A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
AU2003303492A 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes Abandoned AU2003303492A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US60/434,359 2002-12-18
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes
US10/453,037 2003-06-03
PCT/US2003/037786 WO2004061911A2 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Publications (2)

Publication Number Publication Date
AU2003303492A8 AU2003303492A8 (en) 2004-07-29
AU2003303492A1 true AU2003303492A1 (en) 2004-07-29

Family

ID=32600178

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003303492A Abandoned AU2003303492A1 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Country Status (8)

Country Link
US (2) US7012314B2 (https=)
EP (1) EP1573790B1 (https=)
JP (2) JP5489387B2 (https=)
KR (1) KR20050093785A (https=)
AU (1) AU2003303492A1 (https=)
DE (1) DE60310762T2 (https=)
TW (1) TWI232544B (https=)
WO (1) WO2004061911A2 (https=)

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AU2003303492A8 (en) 2004-07-29
JP2006513584A (ja) 2006-04-20
US20060057825A1 (en) 2006-03-16
EP1573790A2 (en) 2005-09-14
DE60310762D1 (de) 2007-02-08
TW200419721A (en) 2004-10-01
TWI232544B (en) 2005-05-11
JP2011238942A (ja) 2011-11-24
JP5489387B2 (ja) 2014-05-14
DE60310762T2 (de) 2007-10-11
WO2004061911A8 (en) 2005-08-25
US7297569B2 (en) 2007-11-20
WO2004061911A3 (en) 2004-09-16
EP1573790B1 (en) 2006-12-27
US7012314B2 (en) 2006-03-14
WO2004061911A2 (en) 2004-07-22
US20040121507A1 (en) 2004-06-24
KR20050093785A (ko) 2005-09-23

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