DE60310762D1 - Halbleiterbauelement mit reduzierten defekten in einer aktiven region und kontaktschema - Google Patents

Halbleiterbauelement mit reduzierten defekten in einer aktiven region und kontaktschema

Info

Publication number
DE60310762D1
DE60310762D1 DE60310762T DE60310762T DE60310762D1 DE 60310762 D1 DE60310762 D1 DE 60310762D1 DE 60310762 T DE60310762 T DE 60310762T DE 60310762 T DE60310762 T DE 60310762T DE 60310762 D1 DE60310762 D1 DE 60310762D1
Authority
DE
Germany
Prior art keywords
semiconductor element
active region
reduced defects
contact scheme
scheme
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60310762T
Other languages
English (en)
Other versions
DE60310762T2 (de
Inventor
Devin Bude
Malcolm Carroll
Alan King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noble Peak Vision Corp
Original Assignee
Noble Device Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noble Device Technologies Corp filed Critical Noble Device Technologies Corp
Publication of DE60310762D1 publication Critical patent/DE60310762D1/de
Application granted granted Critical
Publication of DE60310762T2 publication Critical patent/DE60310762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE60310762T 2002-12-18 2003-11-26 Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema Expired - Lifetime DE60310762T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US434359P 2002-12-18
US453037 2003-06-03
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes
PCT/US2003/037786 WO2004061911A2 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Publications (2)

Publication Number Publication Date
DE60310762D1 true DE60310762D1 (de) 2007-02-08
DE60310762T2 DE60310762T2 (de) 2007-10-11

Family

ID=32600178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60310762T Expired - Lifetime DE60310762T2 (de) 2002-12-18 2003-11-26 Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema

Country Status (8)

Country Link
US (2) US7012314B2 (de)
EP (1) EP1573790B1 (de)
JP (2) JP5489387B2 (de)
KR (1) KR20050093785A (de)
AU (1) AU2003303492A1 (de)
DE (1) DE60310762T2 (de)
TW (1) TWI232544B (de)
WO (1) WO2004061911A2 (de)

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US7297569B2 (en) 2007-11-20
TW200419721A (en) 2004-10-01
EP1573790B1 (de) 2006-12-27
AU2003303492A1 (en) 2004-07-29
JP2011238942A (ja) 2011-11-24
WO2004061911A2 (en) 2004-07-22
EP1573790A2 (de) 2005-09-14
JP5489387B2 (ja) 2014-05-14
DE60310762T2 (de) 2007-10-11
US20060057825A1 (en) 2006-03-16
WO2004061911A3 (en) 2004-09-16
US20040121507A1 (en) 2004-06-24
JP2006513584A (ja) 2006-04-20
KR20050093785A (ko) 2005-09-23
WO2004061911A8 (en) 2005-08-25
US7012314B2 (en) 2006-03-14
TWI232544B (en) 2005-05-11
AU2003303492A8 (en) 2004-07-29

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