DE60123185D1 - Halbleiterlaservorrichtung mit niedrigerem Schwellstrom - Google Patents

Halbleiterlaservorrichtung mit niedrigerem Schwellstrom

Info

Publication number
DE60123185D1
DE60123185D1 DE60123185T DE60123185T DE60123185D1 DE 60123185 D1 DE60123185 D1 DE 60123185D1 DE 60123185 T DE60123185 T DE 60123185T DE 60123185 T DE60123185 T DE 60123185T DE 60123185 D1 DE60123185 D1 DE 60123185D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
lower threshold
threshold current
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60123185T
Other languages
English (en)
Other versions
DE60123185T2 (de
Inventor
Hitoshi Shimizu
Koji Kumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE60123185D1 publication Critical patent/DE60123185D1/de
Publication of DE60123185T2 publication Critical patent/DE60123185T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60123185T 2000-07-31 2001-07-30 Halbleiterlaservorrichtung mit niedrigerem Schwellstrom Expired - Lifetime DE60123185T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000230553 2000-07-31
JP2000230553 2000-07-31
JP2001124300A JP3735047B2 (ja) 2000-07-31 2001-04-23 半導体レーザ素子及びその作製方法
JP2001124300 2001-04-23

Publications (2)

Publication Number Publication Date
DE60123185D1 true DE60123185D1 (de) 2006-11-02
DE60123185T2 DE60123185T2 (de) 2007-10-11

Family

ID=26597005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60123185T Expired - Lifetime DE60123185T2 (de) 2000-07-31 2001-07-30 Halbleiterlaservorrichtung mit niedrigerem Schwellstrom

Country Status (5)

Country Link
US (2) US6912236B2 (de)
EP (1) EP1182756B1 (de)
JP (1) JP3735047B2 (de)
CA (1) CA2354420A1 (de)
DE (1) DE60123185T2 (de)

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US7058112B2 (en) * 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US6975660B2 (en) * 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
JP2003017812A (ja) * 2001-04-25 2003-01-17 Furukawa Electric Co Ltd:The 半導体レーザ素子
US6813295B2 (en) * 2002-03-25 2004-11-02 Agilent Technologies, Inc. Asymmetric InGaAsN vertical cavity surface emitting lasers
JP4025227B2 (ja) * 2002-03-29 2007-12-19 株式会社東芝 半導体積層基板および光半導体素子
US7656924B2 (en) 2002-04-05 2010-02-02 The Furukawa Electric Co., Ltd. Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
JP3966067B2 (ja) 2002-04-26 2007-08-29 富士ゼロックス株式会社 表面発光型半導体レーザ素子およびその製造方法
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP2004063969A (ja) * 2002-07-31 2004-02-26 Victor Co Of Japan Ltd 面発光レーザ
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
DE10331586B4 (de) * 2003-07-09 2006-08-31 Universität Kassel Mikrolaser-Bauelement und Verfahren zu dessen Herstellung
GB2407700A (en) * 2003-10-28 2005-05-04 Sharp Kk MBE growth of nitride semiconductor lasers
JP4579526B2 (ja) * 2003-11-10 2010-11-10 古河電気工業株式会社 面発光レーザ
US7781777B2 (en) * 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
JP4639649B2 (ja) * 2004-03-26 2011-02-23 住友電気工業株式会社 Ｉｉｉ−ｖ化合物半導体層を成長する方法、エピタキシャルウエハ、および半導体装置
JP4643184B2 (ja) * 2004-06-29 2011-03-02 シャープ株式会社 半導体素子、システムおよび半導体素子の製造方法
CA2581614A1 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7720323B2 (en) * 2004-12-20 2010-05-18 Schlumberger Technology Corporation High-temperature downhole devices
JP4575173B2 (ja) * 2005-01-07 2010-11-04 日本電信電話株式会社 量子井戸構造の製造方法
JP4662345B2 (ja) * 2005-03-28 2011-03-30 日本電信電話株式会社 多重歪量子井戸構造及びその製造方法
JP2007251089A (ja) * 2006-03-20 2007-09-27 Nippon Telegr & Teleph Corp <Ntt> 半導体積層構造の製造方法及び半導体量子ドット構造の製造方法
JP5397929B2 (ja) * 2008-01-22 2014-01-22 独立行政法人情報通信研究機構 半導体光デバイス及び光通信用半導体デバイス、並びにその製造方法
JP5274038B2 (ja) * 2008-02-06 2013-08-28 キヤノン株式会社 垂直共振器型面発光レーザの製造方法とレーザアレイの製造方法
JP4963301B2 (ja) * 2008-05-15 2012-06-27 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2012156562A (ja) * 2012-05-21 2012-08-16 Nec Corp 面発光レーザ
US10043941B1 (en) 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
CN110600996B (zh) * 2019-09-26 2024-05-14 苏州矩阵光电有限公司 一种量子阱层结构、半导体激光器及制备方法
US20210194216A1 (en) * 2019-12-24 2021-06-24 Array Photonics, Inc. Stacked semiconductor lasers with controlled spectral emission

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US5383211A (en) * 1993-11-02 1995-01-17 Xerox Corporation TM-polarized laser emitter using III-V alloy with nitrogen
US5689123A (en) 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5451552A (en) * 1994-05-13 1995-09-19 Hughes Aircraft Company Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices
US5825796A (en) * 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
US5719894A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
US5719895A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having short period superlattices
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
US6330263B1 (en) * 1998-05-06 2001-12-11 Sarnoff Corporation Laser diode having separated, highly-strained quantum wells
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US7095770B2 (en) * 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6603784B1 (en) 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
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Also Published As

Publication number Publication date
US20050180485A1 (en) 2005-08-18
JP2002118329A (ja) 2002-04-19
EP1182756B1 (de) 2006-09-20
JP3735047B2 (ja) 2006-01-11
EP1182756A2 (de) 2002-02-27
US20020034203A1 (en) 2002-03-21
US6912236B2 (en) 2005-06-28
CA2354420A1 (en) 2002-01-31
DE60123185T2 (de) 2007-10-11
EP1182756A3 (de) 2003-07-16

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition