DE60000648D1 - Halbleiterspeichereinrichtung mit Hochgeschwindigkeits zeilenschaltung - Google Patents

Halbleiterspeichereinrichtung mit Hochgeschwindigkeits zeilenschaltung

Info

Publication number
DE60000648D1
DE60000648D1 DE60000648T DE60000648T DE60000648D1 DE 60000648 D1 DE60000648 D1 DE 60000648D1 DE 60000648 T DE60000648 T DE 60000648T DE 60000648 T DE60000648 T DE 60000648T DE 60000648 D1 DE60000648 D1 DE 60000648D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
line switching
speed line
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60000648T
Other languages
English (en)
Other versions
DE60000648T2 (de
Inventor
Takeshi Fujino
Kazunari Inoue
Akira Yamazaki
Kazutami Arimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE60000648D1 publication Critical patent/DE60000648D1/de
Application granted granted Critical
Publication of DE60000648T2 publication Critical patent/DE60000648T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE60000648T 1999-11-30 2000-11-28 Halbleiterspeichereinrichtung mit Hochgeschwindigkeits zeilenschaltung Expired - Fee Related DE60000648T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33917499A JP2001155483A (ja) 1999-11-30 1999-11-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE60000648D1 true DE60000648D1 (de) 2002-11-28
DE60000648T2 DE60000648T2 (de) 2003-06-26

Family

ID=18324948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60000648T Expired - Fee Related DE60000648T2 (de) 1999-11-30 2000-11-28 Halbleiterspeichereinrichtung mit Hochgeschwindigkeits zeilenschaltung

Country Status (6)

Country Link
US (1) US6507532B1 (de)
EP (1) EP1113449B1 (de)
JP (1) JP2001155483A (de)
KR (1) KR100404059B1 (de)
DE (1) DE60000648T2 (de)
TW (1) TW487911B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001155483A (ja) * 1999-11-30 2001-06-08 Mitsubishi Electric Corp 半導体記憶装置
US6567332B2 (en) * 2001-03-15 2003-05-20 Micron Technology, Inc. Memory devices with reduced power consumption refresh cycles
KR100543935B1 (ko) * 2001-12-29 2006-01-23 주식회사 하이닉스반도체 반도체 메모리 소자의 홀 드라이버
US6690606B2 (en) * 2002-03-19 2004-02-10 Micron Technology, Inc. Asynchronous interface circuit and method for a pseudo-static memory device
US6798711B2 (en) * 2002-03-19 2004-09-28 Micron Technology, Inc. Memory with address management
US6944708B2 (en) * 2002-03-22 2005-09-13 Intel Corporation Method of self-refresh in large memory arrays
KR100865828B1 (ko) * 2002-05-07 2008-10-28 주식회사 하이닉스반도체 플래시 메모리의 뱅크 분할 방법 및 플래시 메모리의 뱅크분할 장치
US6920524B2 (en) * 2003-02-03 2005-07-19 Micron Technology, Inc. Detection circuit for mixed asynchronous and synchronous memory operation
JP4632114B2 (ja) * 2003-11-25 2011-02-16 エルピーダメモリ株式会社 半導体集積回路装置
KR100535648B1 (ko) * 2004-04-20 2005-12-08 주식회사 하이닉스반도체 블럭 선택 회로
KR100827657B1 (ko) * 2006-09-05 2008-05-07 삼성전자주식회사 반도체 메모리 장치.
US7668040B2 (en) 2006-12-22 2010-02-23 Fujitsu Microelectronics Limited Memory device, memory controller and memory system
JP5029027B2 (ja) * 2007-01-19 2012-09-19 富士通セミコンダクター株式会社 メモリ装置，メモリコントローラ及びメモリシステム
KR100818712B1 (ko) * 2006-12-29 2008-04-01 주식회사 하이닉스반도체 워드라인 구동회로 및 이를 이용한 반도체 장치
US8073648B2 (en) * 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
KR100858876B1 (ko) * 2007-06-29 2008-09-17 주식회사 하이닉스반도체 리프레쉬 모드를 갖는 반도체메모리소자 및 그의 구동 방법
JP5070378B2 (ja) * 2007-10-05 2012-11-14 富士通セミコンダクター株式会社 メモリ装置，メモリコントローラ及びメモリシステム
US9053812B2 (en) 2010-09-24 2015-06-09 Intel Corporation Fast exit from DRAM self-refresh
US9292426B2 (en) * 2010-09-24 2016-03-22 Intel Corporation Fast exit from DRAM self-refresh
US8861301B2 (en) * 2012-06-08 2014-10-14 Freescale Semiconductor, Inc. Clocked memory with latching predecoder circuitry
KR102125568B1 (ko) * 2014-02-19 2020-06-23 에스케이하이닉스 주식회사 반도체 장치 및 그 테스트 방법
US20180061484A1 (en) * 2016-08-29 2018-03-01 Apple Inc. Systems and Methods for Memory Refresh Timing
US10847207B2 (en) 2019-04-08 2020-11-24 Micron Technology, Inc. Apparatuses and methods for controlling driving signals in semiconductor devices
US10910027B2 (en) 2019-04-12 2021-02-02 Micron Technology, Inc. Apparatuses and methods for controlling word line discharge
US10854272B1 (en) 2019-06-24 2020-12-01 Micron Technology, Inc. Apparatuses and methods for controlling word line discharge
US10937476B2 (en) 2019-06-24 2021-03-02 Micron Technology, Inc. Apparatuses and methods for controlling word line discharge
US10854273B1 (en) 2019-06-24 2020-12-01 Micron Technology, Inc. Apparatuses and methods for controlling word drivers
US10854274B1 (en) 2019-09-26 2020-12-01 Micron Technology, Inc. Apparatuses and methods for dynamic timing of row pull down operations
US11205470B2 (en) 2020-04-20 2021-12-21 Micron Technology, Inc. Apparatuses and methods for providing main word line signal with dynamic well
US11990175B2 (en) 2022-04-01 2024-05-21 Micron Technology, Inc. Apparatuses and methods for controlling word line discharge

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5392252A (en) * 1990-11-13 1995-02-21 Vlsi Technology, Inc. Programmable memory addressing
JP3592386B2 (ja) * 1994-11-22 2004-11-24 株式会社ルネサステクノロジ 同期型半導体記憶装置
JPH0963269A (ja) 1995-08-18 1997-03-07 Hitachi Ltd 半導体記憶装置
KR0177789B1 (ko) 1996-01-08 1999-04-15 김광호 클럭 제어 컬럼 디코더
JP3184085B2 (ja) * 1996-03-01 2001-07-09 株式会社東芝 半導体記憶装置
JP2927344B2 (ja) * 1996-08-09 1999-07-28 日本電気株式会社 半導体記憶回路
JPH1074386A (ja) 1996-08-30 1998-03-17 Hitachi Ltd 半導体記憶装置及びデータ処理装置
JPH1116349A (ja) * 1997-06-26 1999-01-22 Mitsubishi Electric Corp 同期型半導体記憶装置
JP4039532B2 (ja) 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
KR100252056B1 (ko) * 1997-12-27 2000-05-01 윤종용 반도체 메모리의 어드레스 디코우딩 장치
JP2001155483A (ja) * 1999-11-30 2001-06-08 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
JP2001155483A (ja) 2001-06-08
EP1113449B1 (de) 2002-10-23
TW487911B (en) 2002-05-21
US6507532B1 (en) 2003-01-14
EP1113449A1 (de) 2001-07-04
DE60000648T2 (de) 2003-06-26
KR100404059B1 (ko) 2003-11-01
KR20010052013A (ko) 2001-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee