AU2795699A - Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby - Google Patents

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Info

Publication number
AU2795699A
AU2795699A AU27956/99A AU2795699A AU2795699A AU 2795699 A AU2795699 A AU 2795699A AU 27956/99 A AU27956/99 A AU 27956/99A AU 2795699 A AU2795699 A AU 2795699A AU 2795699 A AU2795699 A AU 2795699A
Authority
AU
Australia
Prior art keywords
nitride semiconductor
gallium nitride
masks
methods
lateral overgrowth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27956/99A
Inventor
Michael D. Bremser
Robert F Davis
Ok-Hyun Nam
Tsvetanka Zheleva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/031,843 external-priority patent/US6608327B1/en
Priority claimed from US09/032,190 external-priority patent/US6051849A/en
Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Publication of AU2795699A publication Critical patent/AU2795699A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
AU27956/99A 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby Abandoned AU2795699A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/031,843 US6608327B1 (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structure including laterally offset patterned layers
US09/032,190 US6051849A (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US09032190 1998-02-27
US09031843 1998-02-27
PCT/US1999/004346 WO1999044224A1 (en) 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Publications (1)

Publication Number Publication Date
AU2795699A true AU2795699A (en) 1999-09-15

Family

ID=26707683

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27956/99A Abandoned AU2795699A (en) 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Country Status (7)

Country Link
EP (1) EP1070340A1 (en)
JP (1) JP2002505519A (en)
KR (1) KR100610396B1 (en)
CN (1) CN1143363C (en)
AU (1) AU2795699A (en)
CA (1) CA2321118C (en)
WO (1) WO1999044224A1 (en)

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EP2234142A1 (en) 1997-04-11 2010-09-29 Nichia Corporation Nitride semiconductor substrate
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP4529215B2 (en) * 1999-10-29 2010-08-25 日亜化学工業株式会社 Nitride semiconductor growth method
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
CN1248288C (en) * 2000-02-09 2006-03-29 北卡罗来纳州大学 Methods of fabricating gallium nitride semicnductor layers on substrates including non-gallium nitride posts and gallium nitride
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP4291527B2 (en) 2000-10-13 2009-07-08 日本碍子株式会社 Method of using group III nitride epitaxial substrate
JP4920152B2 (en) * 2001-10-12 2012-04-18 住友電気工業株式会社 Structure substrate manufacturing method and semiconductor device manufacturing method
WO2003089696A1 (en) * 2002-04-15 2003-10-30 The Regents Of The University Of California Dislocation reduction in non-polar gallium nitride thin films
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
KR100960764B1 (en) * 2003-01-28 2010-06-01 엘지전자 주식회사 Laser emitting diode, and method for manufacturing the same
FR2855650B1 (en) * 2003-05-30 2006-03-03 Soitec Silicon On Insulator SUBSTRATES FOR CONSTRAINTS SYSTEMS AND METHOD FOR CRYSTALLINE GROWTH ON SUCH A SUBSTRATE
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
KR100735488B1 (en) * 2006-02-03 2007-07-04 삼성전기주식회사 Method for forming the gan type led device
KR100773555B1 (en) * 2006-07-21 2007-11-06 삼성전자주식회사 Semiconductor substrate having low defects and method of manufacturing the same
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
JP4638958B1 (en) * 2009-08-20 2011-02-23 株式会社パウデック Manufacturing method of semiconductor device
CN102427101B (en) * 2011-11-30 2014-05-07 李园 Semiconductor structure and forming method thereof
WO2013154485A1 (en) * 2012-04-13 2013-10-17 Sun Yanting A method for manufacturing a semiconductor method device based on epitaxial growth.
CN108368640A (en) * 2015-05-21 2018-08-03 Ev 集团 E·索尔纳有限责任公司 Method for being applied to outgrowth layer on seed layer
CN106469648B (en) * 2015-08-31 2019-12-13 中国科学院微电子研究所 epitaxial structure and method
US20230073455A1 (en) * 2020-05-27 2023-03-09 Enkris Semiconductor, Inc. Group-iii-nitride structures and manufacturing methods thereof
TWI834979B (en) * 2020-06-22 2024-03-11 日商京瓷股份有限公司 Semiconductor device manufacturing method, semiconductor substrate and electronic equipment

Family Cites Families (11)

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JPH04127521A (en) * 1990-09-19 1992-04-28 Fujitsu Ltd Manufacture of semiconductor substrate
JPH04303920A (en) * 1991-03-29 1992-10-27 Nec Corp Insulating film/iii-v compound semiconductor stacked structure on group iv substrate
AU6946196A (en) * 1995-09-18 1997-04-09 Hitachi Limited Semiconductor material, method of producing the semiconductor material, and semiconductor device
JP3757339B2 (en) * 1995-12-26 2006-03-22 富士通株式会社 Method for manufacturing compound semiconductor device
JPH09219540A (en) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho Forming method of gan thin film
JP3139445B2 (en) * 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
JPH10326912A (en) * 1997-03-25 1998-12-08 Mitsubishi Cable Ind Ltd Production of non-dislocated gan substrate and gan base material
JPH11191657A (en) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd Growing method of nitride semiconductor and nitride semiconductor device
JPH10321529A (en) * 1997-05-22 1998-12-04 Nippon Telegr & Teleph Corp <Ntt> Double layer selective growth method
JPH11135770A (en) * 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd Iii-v compd. semiconductor, manufacture thereof and semiconductor element
JP3925753B2 (en) * 1997-10-24 2007-06-06 ソニー株式会社 Semiconductor device, manufacturing method thereof, and semiconductor light emitting device

Also Published As

Publication number Publication date
CN1292149A (en) 2001-04-18
KR100610396B1 (en) 2006-08-09
EP1070340A1 (en) 2001-01-24
CN1143363C (en) 2004-03-24
WO1999044224A1 (en) 1999-09-02
JP2002505519A (en) 2002-02-19
KR20010041192A (en) 2001-05-15
CA2321118A1 (en) 1999-09-02
CA2321118C (en) 2008-06-03

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase