AU2001218182A1 - Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby - Google Patents
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated therebyInfo
- Publication number
- AU2001218182A1 AU2001218182A1 AU2001218182A AU1818201A AU2001218182A1 AU 2001218182 A1 AU2001218182 A1 AU 2001218182A1 AU 2001218182 A AU2001218182 A AU 2001218182A AU 1818201 A AU1818201 A AU 1818201A AU 2001218182 A1 AU2001218182 A1 AU 2001218182A1
- Authority
- AU
- Australia
- Prior art keywords
- gallium nitride
- nitride semiconductor
- methods
- posts
- including non
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50105700A | 2000-02-09 | 2000-02-09 | |
US09501057 | 2000-02-09 | ||
PCT/US2000/040724 WO2001059819A1 (en) | 2000-02-09 | 2000-08-22 | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001218182A1 true AU2001218182A1 (en) | 2001-08-20 |
Family
ID=23991977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001218182A Abandoned AU2001218182A1 (en) | 2000-02-09 | 2000-08-22 | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP4801306B2 (en) |
KR (1) | KR100865600B1 (en) |
CN (1) | CN1248288C (en) |
AU (1) | AU2001218182A1 (en) |
WO (1) | WO2001059819A1 (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5095064B2 (en) | 2000-08-04 | 2012-12-12 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Semiconductor film having nitride layer deposited on silicon substrate and method for manufacturing the same |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6611002B2 (en) | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
US7233028B2 (en) | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
US6956250B2 (en) | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
KR100454908B1 (en) * | 2002-02-09 | 2004-11-06 | 엘지전자 주식회사 | Method for manufacturing GaN substrate |
JP4513446B2 (en) * | 2004-07-23 | 2010-07-28 | 豊田合成株式会社 | Crystal growth method of semiconductor crystal |
CN100365767C (en) * | 2004-09-17 | 2008-01-30 | 同济大学 | Substrate processing method for improving gallium nitride base material epitaxial layer quality |
JP4744245B2 (en) * | 2004-11-05 | 2011-08-10 | シャープ株式会社 | Nitride semiconductor device |
TW200703463A (en) | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
JP4793824B2 (en) * | 2006-08-28 | 2011-10-12 | シャープ株式会社 | Method for forming nitride semiconductor layer |
JP5003719B2 (en) * | 2009-05-07 | 2012-08-15 | 豊田合成株式会社 | Semiconductor device and crystal growth substrate |
TWI562195B (en) * | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
KR101622309B1 (en) | 2010-12-16 | 2016-05-18 | 삼성전자주식회사 | Nano-structured light emitting device |
JP5811009B2 (en) | 2012-03-30 | 2015-11-11 | 豊田合成株式会社 | Group III nitride semiconductor manufacturing method and group III nitride semiconductor |
JP6020357B2 (en) | 2013-05-31 | 2016-11-02 | 豊田合成株式会社 | Group III nitride semiconductor manufacturing method and group III nitride semiconductor |
JP6485299B2 (en) * | 2015-06-05 | 2019-03-20 | 豊田合成株式会社 | Semiconductor device, method for manufacturing the same, and power conversion device |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569099B2 (en) * | 1987-12-25 | 1997-01-08 | 株式会社日立製作所 | Epitaxial growth method |
JPH05234900A (en) * | 1992-02-19 | 1993-09-10 | Nec Corp | Manufacture of semiconductor device |
DE19725900C2 (en) * | 1997-06-13 | 2003-03-06 | Dieter Bimberg | Process for the deposition of gallium nitride on silicon substrates |
JP3930161B2 (en) * | 1997-08-29 | 2007-06-13 | 株式会社東芝 | Nitride-based semiconductor device, light-emitting device, and manufacturing method thereof |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
AU2795699A (en) * | 1998-02-27 | 1999-09-15 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby |
JP4005701B2 (en) * | 1998-06-24 | 2007-11-14 | シャープ株式会社 | Method of forming nitrogen compound semiconductor film and nitrogen compound semiconductor element |
JP4352473B2 (en) * | 1998-06-26 | 2009-10-28 | ソニー株式会社 | Manufacturing method of semiconductor device |
JP2000031068A (en) * | 1998-07-14 | 2000-01-28 | Mitsubishi Cable Ind Ltd | SUBSTRATE FOR GaN CRYSTAL GROWTH |
JP3471685B2 (en) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | Semiconductor substrate and manufacturing method thereof |
JP3471700B2 (en) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | Semiconductor substrate |
-
2000
- 2000-08-22 AU AU2001218182A patent/AU2001218182A1/en not_active Abandoned
- 2000-08-22 JP JP2001559046A patent/JP4801306B2/en not_active Expired - Lifetime
- 2000-08-22 KR KR1020027010250A patent/KR100865600B1/en active IP Right Grant
- 2000-08-22 WO PCT/US2000/040724 patent/WO2001059819A1/en active Application Filing
- 2000-08-22 CN CNB00818903XA patent/CN1248288C/en not_active Expired - Lifetime
-
2010
- 2010-09-24 JP JP2010213073A patent/JP5323792B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2003526907A (en) | 2003-09-09 |
JP4801306B2 (en) | 2011-10-26 |
KR100865600B1 (en) | 2008-10-27 |
WO2001059819A1 (en) | 2001-08-16 |
CN1451173A (en) | 2003-10-22 |
JP5323792B2 (en) | 2013-10-23 |
KR20020086511A (en) | 2002-11-18 |
CN1248288C (en) | 2006-03-29 |
JP2010283398A (en) | 2010-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU4524701A (en) | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby | |
AU2430401A (en) | Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby | |
AU2001218182A1 (en) | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby | |
AU2002252047A1 (en) | Gallium nitride material devices including backside vias and methods of fabrication | |
AU2795699A (en) | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby | |
WO2005050716A3 (en) | High-temperature devices on insulator substrates | |
AU2001234169A1 (en) | Group iii nitride compound semiconductor and method for manufacturing the same | |
AU2001241108A1 (en) | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element | |
AU2001286649A1 (en) | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices | |
AU2002214580A1 (en) | Semiconductor structure and process for fabricating same | |
AU2002309954A1 (en) | Semiconductor structures and devices not lattice matched to the substrate | |
AU2002217545A1 (en) | Semiconductor device and its manufacturing method | |
AU2001288850A1 (en) | Semiconductor structure including a partially annealed layer | |
AU2001236076A1 (en) | Production method of iii nitride compound semiconductor substrate and semiconductor device | |
AU2001278749A1 (en) | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof | |
AU2002227237A1 (en) | Growth of compound semiconductor structures on patterned oxide films | |
AU2001294817A1 (en) | Fabrication of semiconductor devices | |
AU2152000A (en) | Fabrication of gallium nitride layers on silicon | |
AU2001247389A1 (en) | Iii-v nitride substrate boule and method of making and using the same | |
AU2002357862A1 (en) | Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same | |
AU2001232341A1 (en) | Iii nitride compound semiconductor element and electrode forming method | |
AU2001224025A1 (en) | Group iii nitride compound semiconductor light-emitting device and method for producing the same | |
AU2002302968A1 (en) | Semiconductor device, semiconductor layer and production method thereof | |
EP1202350A3 (en) | Semiconductor device and manufacturing method thereof | |
AU2002349581A1 (en) | Semiconductor device and manufacturing method thereof |