CA2321118A1 - Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby - Google Patents

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby Download PDF

Info

Publication number
CA2321118A1
CA2321118A1 CA002321118A CA2321118A CA2321118A1 CA 2321118 A1 CA2321118 A1 CA 2321118A1 CA 002321118 A CA002321118 A CA 002321118A CA 2321118 A CA2321118 A CA 2321118A CA 2321118 A1 CA2321118 A1 CA 2321118A1
Authority
CA
Canada
Prior art keywords
gallium nitride
nitride semiconductor
masks
openings
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002321118A
Other languages
French (fr)
Other versions
CA2321118C (en
Inventor
Robert F. Davis
Ok-Hyun Nam
Tsvetanka Zheleva
Michael D. Bremser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/032,190 external-priority patent/US6051849A/en
Priority claimed from US09/031,843 external-priority patent/US6608327B1/en
Application filed by Individual filed Critical Individual
Publication of CA2321118A1 publication Critical patent/CA2321118A1/en
Application granted granted Critical
Publication of CA2321118C publication Critical patent/CA2321118C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Abstract

A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer (104) with a first mask (106) that includes a first array of openings therein and growing the underlying gallium nitride layer (104) through the first array of openings and onto the first mask, to thereby form a first overgrown gallium nitride semiconductor layer (108a, b). The first overgrown layer is then masked with the second mask (206) that includes a second array of openings therein.
The second array of openings is laterally offset from the first array of openings. The first overgrown gallium nitride layer (108a, b) is then grown through the second array of openings and onto the second mask (206), to thereby form a second overgrown gallium nitride semiconductor layer (208a, b). Microelectronic devices (210) may then be formed in the second overgrown gallium nitride semiconductor layer (208a, b).
CA002321118A 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby Expired - Lifetime CA2321118C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/032,190 1998-02-27
US09/032,190 US6051849A (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US09/031,843 1998-02-27
US09/031,843 US6608327B1 (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structure including laterally offset patterned layers
PCT/US1999/004346 WO1999044224A1 (en) 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Publications (2)

Publication Number Publication Date
CA2321118A1 true CA2321118A1 (en) 1999-09-02
CA2321118C CA2321118C (en) 2008-06-03

Family

ID=26707683

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002321118A Expired - Lifetime CA2321118C (en) 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Country Status (7)

Country Link
EP (1) EP1070340A1 (en)
JP (1) JP2002505519A (en)
KR (1) KR100610396B1 (en)
CN (1) CN1143363C (en)
AU (1) AU2795699A (en)
CA (1) CA2321118C (en)
WO (1) WO1999044224A1 (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2258080C (en) 1997-04-11 2007-06-05 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP4529215B2 (en) * 1999-10-29 2010-08-25 日亜化学工業株式会社 Nitride semiconductor growth method
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
AU2001218182A1 (en) * 2000-02-09 2001-08-20 North Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP4291527B2 (en) 2000-10-13 2009-07-08 日本碍子株式会社 Method of using group III nitride epitaxial substrate
JP4920152B2 (en) * 2001-10-12 2012-04-18 住友電気工業株式会社 Structure substrate manufacturing method and semiconductor device manufacturing method
US20030198837A1 (en) * 2002-04-15 2003-10-23 Craven Michael D. Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
KR100960764B1 (en) * 2003-01-28 2010-06-01 엘지전자 주식회사 Laser emitting diode, and method for manufacturing the same
FR2855650B1 (en) * 2003-05-30 2006-03-03 Soitec Silicon On Insulator SUBSTRATES FOR CONSTRAINTS SYSTEMS AND METHOD FOR CRYSTALLINE GROWTH ON SUCH A SUBSTRATE
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
KR100735488B1 (en) * 2006-02-03 2007-07-04 삼성전기주식회사 Method for forming the gan type led device
KR100773555B1 (en) * 2006-07-21 2007-11-06 삼성전자주식회사 Semiconductor substrate having low defects and method of manufacturing the same
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
JP4638958B1 (en) * 2009-08-20 2011-02-23 株式会社パウデック Manufacturing method of semiconductor device
CN102427101B (en) * 2011-11-30 2014-05-07 李园 Semiconductor structure and forming method thereof
EP2837021A4 (en) * 2012-04-13 2016-03-23 Tandem Sun Ab A method for manufacturing a semiconductor method device based on epitaxial growth.
CN108368640A (en) * 2015-05-21 2018-08-03 Ev 集团 E·索尔纳有限责任公司 Method for being applied to outgrowth layer on seed layer
CN106469648B (en) * 2015-08-31 2019-12-13 中国科学院微电子研究所 epitaxial structure and method
WO2021237528A1 (en) * 2020-05-27 2021-12-02 苏州晶湛半导体有限公司 Group iii nitride structure and preparation method therefor
WO2021261494A1 (en) * 2020-06-22 2021-12-30 京セラ株式会社 Method for producing semiconductor device, semiconductor device, electronic device, method for producing semiconductor epitaxial substrate, and semiconductor epitaxial substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127521A (en) * 1990-09-19 1992-04-28 Fujitsu Ltd Manufacture of semiconductor substrate
JPH04303920A (en) * 1991-03-29 1992-10-27 Nec Corp Insulating film/iii-v compound semiconductor stacked structure on group iv substrate
EP1081818B1 (en) * 1995-09-18 2004-08-18 Hitachi, Ltd. Semiconductor laser devices
JP3757339B2 (en) * 1995-12-26 2006-03-22 富士通株式会社 Method for manufacturing compound semiconductor device
JPH09219540A (en) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho Forming method of gan thin film
JP3139445B2 (en) * 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
JPH10326912A (en) * 1997-03-25 1998-12-08 Mitsubishi Cable Ind Ltd Production of non-dislocated gan substrate and gan base material
JPH11191657A (en) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd Growing method of nitride semiconductor and nitride semiconductor device
JPH10321529A (en) * 1997-05-22 1998-12-04 Nippon Telegr & Teleph Corp <Ntt> Double layer selective growth method
JPH11135770A (en) * 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd Iii-v compd. semiconductor, manufacture thereof and semiconductor element
JP3925753B2 (en) * 1997-10-24 2007-06-06 ソニー株式会社 Semiconductor device, manufacturing method thereof, and semiconductor light emitting device

Also Published As

Publication number Publication date
JP2002505519A (en) 2002-02-19
CN1292149A (en) 2001-04-18
EP1070340A1 (en) 2001-01-24
CA2321118C (en) 2008-06-03
AU2795699A (en) 1999-09-15
KR20010041192A (en) 2001-05-15
KR100610396B1 (en) 2006-08-09
WO1999044224A1 (en) 1999-09-02
CN1143363C (en) 2004-03-24

Similar Documents

Publication Publication Date Title
CA2321118A1 (en) Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
CA2347425A1 (en) Fabrication of gallium nitride layers by lateral growth
CA2331893A1 (en) Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls
WO1991017575A3 (en) Optoelectronic device
WO2001043174A3 (en) Fabrication of gallium nitride layers on textured silicon substrates
JPS6016420A (en) Selective epitaxial growth method
WO2003034560A1 (en) Method for fabricating semiconductor light emitting element, semiconductor light emitting element, method for fabricating semiconductor element, semiconductor element, method for fabricating element and element
CA2225930A1 (en) Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
CA2392041A1 (en) Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
EP0955708A3 (en) Blue vertical cavity surface emitting laser
KR20070104421A (en) Semiconductor luminous element and method for manufacture thereof
WO2003038957A1 (en) Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus
TW429660B (en) Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
JP2005522890A5 (en) Reduction of dislocations in nonpolar gallium nitride thin films.
WO2002071458A3 (en) Growth of compound semiconductor structures on patterned oxide films
EP1178523A4 (en) METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE
AU8009500A (en) Single step pendeo- and lateral epitaxial overgrowth of group iii-nitride layers
EP1091422A2 (en) Semiconductor device, semiconductor substrate, and manufacture method
WO2004105108A3 (en) Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
WO2004006016A3 (en) Mask and manufacturing method using mask
CA2139709A1 (en) Method of processing an epitaxial wafer of inp
CA2006266A1 (en) Method for the epitaxial growth of a semiconductor structure
JP2000174343A5 (en)
JP2003081697A5 (en)
JP2000332293A5 (en)

Legal Events

Date Code Title Description
EEER Examination request
MKEX Expiry

Effective date: 20190226

MKEX Expiry

Effective date: 20190226