AU2000226927A1 - Semiconductor integrated circuit device and method of producing the same, and method of producing masks - Google Patents

Semiconductor integrated circuit device and method of producing the same, and method of producing masks

Info

Publication number
AU2000226927A1
AU2000226927A1 AU2000226927A AU2692700A AU2000226927A1 AU 2000226927 A1 AU2000226927 A1 AU 2000226927A1 AU 2000226927 A AU2000226927 A AU 2000226927A AU 2692700 A AU2692700 A AU 2692700A AU 2000226927 A1 AU2000226927 A1 AU 2000226927A1
Authority
AU
Australia
Prior art keywords
producing
integrated circuit
same
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000226927A
Inventor
Hiroshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of AU2000226927A1 publication Critical patent/AU2000226927A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
AU2000226927A 2000-02-25 2000-02-25 Semiconductor integrated circuit device and method of producing the same, and method of producing masks Abandoned AU2000226927A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/001096 WO2001063653A1 (en) 2000-02-25 2000-02-25 Semiconductor integrated circuit device and method of producing the same, and method of producing masks

Publications (1)

Publication Number Publication Date
AU2000226927A1 true AU2000226927A1 (en) 2001-09-03

Family

ID=11735718

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000226927A Abandoned AU2000226927A1 (en) 2000-02-25 2000-02-25 Semiconductor integrated circuit device and method of producing the same, and method of producing masks

Country Status (7)

Country Link
US (1) US6811954B1 (en)
JP (1) JP4009459B2 (en)
KR (1) KR100475621B1 (en)
CN (1) CN1191610C (en)
AU (1) AU2000226927A1 (en)
TW (1) TW464945B (en)
WO (1) WO2001063653A1 (en)

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* Cited by examiner, † Cited by third party
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EP1303790B1 (en) * 2000-07-26 2007-02-28 Qimonda AG Method for determining the possibility to assign images of integrated semiconductor circuits to alternating phase shifting masks
DE10224953B4 (en) * 2002-06-05 2005-06-16 Infineon Technologies Ag Method for eliminating phase conflict centers in alternating phase masks and method for producing alternating phase masks
US6821689B2 (en) * 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
JP2004111527A (en) * 2002-09-17 2004-04-08 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device / generating method of mask pattern
KR100956339B1 (en) * 2003-02-25 2010-05-06 삼성전자주식회사 Crystallization system of silicon and crystallization method of silicon
US7229722B2 (en) * 2004-01-28 2007-06-12 International Business Machines Corporation Alternating phase shift mask design for high performance circuitry
JP2005236062A (en) * 2004-02-20 2005-09-02 Nec Electronics Corp Manufacturing method for nonvolatile semiconductor memory apparatus
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7120046B1 (en) 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7888721B2 (en) 2005-07-06 2011-02-15 Micron Technology, Inc. Surround gate access transistors with grown ultra-thin bodies
US7768051B2 (en) 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US7816262B2 (en) * 2005-08-30 2010-10-19 Micron Technology, Inc. Method and algorithm for random half pitched interconnect layout with constant spacing
US7696567B2 (en) 2005-08-31 2010-04-13 Micron Technology, Inc Semiconductor memory device
CN1924868B (en) * 2005-09-02 2011-04-20 上海集成电路研发中心有限公司 Method for narrowing integrated circuit chip area
JP2007086587A (en) * 2005-09-26 2007-04-05 Renesas Technology Corp Method for designing mask pattern and method for manufacturing semiconductor device
JP2007086586A (en) * 2005-09-26 2007-04-05 Renesas Technology Corp Method for designing mask pattern and method for manufacturing semiconductor device
JP2007115587A (en) * 2005-10-21 2007-05-10 Sii Nanotechnology Inc Charged particle beam processing method and charged particle beam device
JP4961750B2 (en) * 2006-01-16 2012-06-27 富士通セミコンダクター株式会社 Semiconductor device manufacturing method and exposure method
US20070231710A1 (en) * 2006-03-30 2007-10-04 Texas Instruments Incorporated. Method and system for forming a photomask pattern
EP1843202B1 (en) 2006-04-06 2015-02-18 ASML Netherlands B.V. Method for performing dark field double dipole lithography
KR100781893B1 (en) * 2006-07-21 2007-12-03 동부일렉트로닉스 주식회사 A mask pattern of a semiconductor device and a method for forming the same
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US7829266B2 (en) * 2007-08-07 2010-11-09 Globalfoundries Inc. Multiple exposure technique using OPC to correct distortion
JP5233219B2 (en) * 2007-09-20 2013-07-10 富士通セミコンダクター株式会社 Semiconductor device manufacturing method and photomask design method
TWI427677B (en) * 2008-05-12 2014-02-21 Richtek Technology Corp Used to reduce the embossing of the metal mask, hole layout and methods
US8972909B1 (en) * 2013-09-27 2015-03-03 Taiwan Semiconductor Manufacturing Co., Ltd. OPC method with higher degree of freedom
CN104199252B (en) * 2014-09-10 2017-10-27 中国科学院高能物理研究所 A kind of method for realizing photoresist micro-structural
CN104459998B (en) * 2015-01-06 2016-09-28 四川大学 A kind of trichroism photoconverter of RGB based on liquid prism
CN109375475A (en) * 2015-11-30 2019-02-22 株式会社尼康 Substrate processing method using same and element fabricating device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650962B2 (en) 1988-05-11 1997-09-10 株式会社日立製作所 Exposure method, element forming method, and semiconductor element manufacturing method
JP3053099B2 (en) 1989-12-01 2000-06-19 株式会社日立製作所 Method for manufacturing element having pattern structure
JPH05204131A (en) 1992-01-29 1993-08-13 Oki Electric Ind Co Ltd Photomask and formation of pattern using this mask
JP3148770B2 (en) 1992-03-27 2001-03-26 日本電信電話株式会社 Photomask and mask pattern data processing method
JP3268692B2 (en) 1993-08-05 2002-03-25 株式会社日立製作所 Method for forming semiconductor integrated circuit pattern and method for manufacturing mask used therefor
JP2636700B2 (en) 1993-10-04 1997-07-30 日本電気株式会社 Method for manufacturing semiconductor device
JPH0895230A (en) 1994-09-27 1996-04-12 Fujitsu Ltd Mask for forming pattern including fine pattern and pattern forming method using the mask
US5472814A (en) 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
US5523186A (en) * 1994-12-16 1996-06-04 International Business Machines Corporation Split and cover technique for phase shifting photolithography
JP2638561B2 (en) 1995-05-10 1997-08-06 株式会社日立製作所 Mask formation method
US5795685A (en) * 1997-01-14 1998-08-18 International Business Machines Corporation Simple repair method for phase shifting masks
JP3119202B2 (en) 1997-06-23 2000-12-18 日本電気株式会社 Automatic mask pattern generation method and mask

Also Published As

Publication number Publication date
CN1413356A (en) 2003-04-23
KR20020060269A (en) 2002-07-15
WO2001063653A1 (en) 2001-08-30
KR100475621B1 (en) 2005-03-15
CN1191610C (en) 2005-03-02
US6811954B1 (en) 2004-11-02
JP4009459B2 (en) 2007-11-14
TW464945B (en) 2001-11-21

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