TWI232544B - Semiconductor devices with reduced active region defects and unique contacting schemes - Google Patents

Semiconductor devices with reduced active region defects and unique contacting schemes Download PDF

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Publication number
TWI232544B
TWI232544B TW092128288A TW92128288A TWI232544B TW I232544 B TWI232544 B TW I232544B TW 092128288 A TW092128288 A TW 092128288A TW 92128288 A TW92128288 A TW 92128288A TW I232544 B TWI232544 B TW I232544B
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Taiwan
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area
region
opening
cladding
pixel
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TW092128288A
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English (en)
Chinese (zh)
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TW200419721A (en
Inventor
Jeffrey Devin Bude
Malcolm Carroll
Clifford Alan King
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Agere Systems Inc
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Publication of TW200419721A publication Critical patent/TW200419721A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW092128288A 2002-12-18 2003-10-13 Semiconductor devices with reduced active region defects and unique contacting schemes TWI232544B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes

Publications (2)

Publication Number Publication Date
TW200419721A TW200419721A (en) 2004-10-01
TWI232544B true TWI232544B (en) 2005-05-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW092128288A TWI232544B (en) 2002-12-18 2003-10-13 Semiconductor devices with reduced active region defects and unique contacting schemes

Country Status (8)

Country Link
US (2) US7012314B2 (https=)
EP (1) EP1573790B1 (https=)
JP (2) JP5489387B2 (https=)
KR (1) KR20050093785A (https=)
AU (1) AU2003303492A1 (https=)
DE (1) DE60310762T2 (https=)
TW (1) TWI232544B (https=)
WO (1) WO2004061911A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI736892B (zh) * 2018-07-27 2021-08-21 台灣積體電路製造股份有限公司 用以降低影像感測器中暗電流的覆蓋結構及其形成方法

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JP2006513584A (ja) 2006-04-20
US20060057825A1 (en) 2006-03-16
EP1573790A2 (en) 2005-09-14
DE60310762D1 (de) 2007-02-08
TW200419721A (en) 2004-10-01
JP2011238942A (ja) 2011-11-24
JP5489387B2 (ja) 2014-05-14
DE60310762T2 (de) 2007-10-11
WO2004061911A8 (en) 2005-08-25
US7297569B2 (en) 2007-11-20
WO2004061911A3 (en) 2004-09-16
EP1573790B1 (en) 2006-12-27
AU2003303492A1 (en) 2004-07-29
US7012314B2 (en) 2006-03-14
WO2004061911A2 (en) 2004-07-22
US20040121507A1 (en) 2004-06-24
KR20050093785A (ko) 2005-09-23

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