DE60310762T2 - Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema - Google Patents

Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema Download PDF

Info

Publication number
DE60310762T2
DE60310762T2 DE60310762T DE60310762T DE60310762T2 DE 60310762 T2 DE60310762 T2 DE 60310762T2 DE 60310762 T DE60310762 T DE 60310762T DE 60310762 T DE60310762 T DE 60310762T DE 60310762 T2 DE60310762 T2 DE 60310762T2
Authority
DE
Germany
Prior art keywords
region
opening
layer
area
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60310762T
Other languages
German (de)
English (en)
Other versions
DE60310762D1 (de
Inventor
Devin Jeffrey New Providence BUDE
Malcolm Cranford CARROLL
Alan Clifford New York KING
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noble Peak Vision Corp
Original Assignee
Noble Device Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noble Device Technologies Corp filed Critical Noble Device Technologies Corp
Publication of DE60310762D1 publication Critical patent/DE60310762D1/de
Application granted granted Critical
Publication of DE60310762T2 publication Critical patent/DE60310762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE60310762T 2002-12-18 2003-11-26 Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema Expired - Lifetime DE60310762T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US43435902P 2002-12-18 2002-12-18
US434359P 2002-12-18
US10/453,037 US7012314B2 (en) 2002-12-18 2003-06-03 Semiconductor devices with reduced active region defects and unique contacting schemes
US453037 2003-06-03
PCT/US2003/037786 WO2004061911A2 (en) 2002-12-18 2003-11-26 Semiconductor devices with reduced active region defects and unique contacting schemes

Publications (2)

Publication Number Publication Date
DE60310762D1 DE60310762D1 (de) 2007-02-08
DE60310762T2 true DE60310762T2 (de) 2007-10-11

Family

ID=32600178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60310762T Expired - Lifetime DE60310762T2 (de) 2002-12-18 2003-11-26 Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema

Country Status (8)

Country Link
US (2) US7012314B2 (https=)
EP (1) EP1573790B1 (https=)
JP (2) JP5489387B2 (https=)
KR (1) KR20050093785A (https=)
AU (1) AU2003303492A1 (https=)
DE (1) DE60310762T2 (https=)
TW (1) TWI232544B (https=)
WO (1) WO2004061911A2 (https=)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) * 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7589380B2 (en) * 2002-12-18 2009-09-15 Noble Peak Vision Corp. Method for forming integrated circuit utilizing dual semiconductors
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US20060055800A1 (en) * 2002-12-18 2006-03-16 Noble Device Technologies Corp. Adaptive solid state image sensor
US7643755B2 (en) * 2003-10-13 2010-01-05 Noble Peak Vision Corp. Optical receiver comprising a receiver photodetector integrated with an imaging array
WO2004081982A2 (en) 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US7122392B2 (en) * 2003-06-30 2006-10-17 Intel Corporation Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
US7503706B2 (en) * 2003-09-05 2009-03-17 Sae Magnetics (Hong Kong) Limited MSM photodetector assembly
US7579263B2 (en) 2003-09-09 2009-08-25 Stc.Unm Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US6919258B2 (en) * 2003-10-02 2005-07-19 Freescale Semiconductor, Inc. Semiconductor device incorporating a defect controlled strained channel structure and method of making the same
EP1685701B1 (en) 2003-10-13 2008-09-17 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7198970B2 (en) * 2004-01-23 2007-04-03 The United States Of America As Represented By The Secretary Of The Navy Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
US7186622B2 (en) * 2004-07-15 2007-03-06 Infineon Technologies Ag Formation of active area using semiconductor growth process without STI integration
US20060073681A1 (en) * 2004-09-08 2006-04-06 Han Sang M Nanoheteroepitaxy of Ge on Si as a foundation for group III-V and II-VI integration
US7439542B2 (en) * 2004-10-05 2008-10-21 International Business Machines Corporation Hybrid orientation CMOS with partial insulation process
KR100641068B1 (ko) * 2005-01-21 2006-11-06 삼성전자주식회사 듀얼 다마신 채널 구조물과 그 제조 방법
US7298009B2 (en) * 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20060292719A1 (en) * 2005-05-17 2006-12-28 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
KR101329388B1 (ko) * 2005-07-26 2013-11-14 앰버웨이브 시스템즈 코포레이션 다른 액티브 영역 물질의 집적회로 집적을 위한 솔루션
US7459367B2 (en) * 2005-07-27 2008-12-02 International Business Machines Corporation Method of forming a vertical P-N junction device
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
WO2007053686A2 (en) * 2005-11-01 2007-05-10 Massachusetts Institute Of Technology Monolithically integrated semiconductor materials and devices
US20070252223A1 (en) * 2005-12-05 2007-11-01 Massachusetts Institute Of Technology Insulated gate devices and method of making same
US8530355B2 (en) * 2005-12-23 2013-09-10 Infineon Technologies Ag Mixed orientation semiconductor device and method
US7629661B2 (en) * 2006-02-10 2009-12-08 Noble Peak Vision Corp. Semiconductor devices with photoresponsive components and metal silicide light blocking structures
US7901968B2 (en) * 2006-03-23 2011-03-08 Asm America, Inc. Heteroepitaxial deposition over an oxidized surface
US7777250B2 (en) * 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US7485524B2 (en) * 2006-06-21 2009-02-03 International Business Machines Corporation MOSFETs comprising source/drain regions with slanted upper surfaces, and method for fabricating the same
US8063397B2 (en) * 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
WO2008036256A1 (en) * 2006-09-18 2008-03-27 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US7799592B2 (en) * 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US20080187018A1 (en) * 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
WO2009035746A2 (en) 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
US8871554B2 (en) * 2007-10-30 2014-10-28 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating butt-coupled electro-absorptive modulators
US7723206B2 (en) * 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode
KR20100123681A (ko) * 2008-03-01 2010-11-24 스미또모 가가꾸 가부시키가이샤 반도체 기판, 반도체 기판의 제조방법 및 전자 디바이스
KR20100123680A (ko) * 2008-03-01 2010-11-24 스미또모 가가꾸 가부시키가이샤 반도체 기판, 반도체 기판의 제조방법 및 전자 디바이스
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8084739B2 (en) 2008-07-16 2011-12-27 Infrared Newco., Inc. Imaging apparatus and methods
US8686365B2 (en) * 2008-07-28 2014-04-01 Infrared Newco, Inc. Imaging apparatus and methods
US20100072515A1 (en) * 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP5593050B2 (ja) 2008-10-02 2014-09-17 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
SG171987A1 (en) 2009-04-02 2011-07-28 Taiwan Semiconductor Mfg Devices formed from a non-polar plane of a crystalline material and method of making the same
WO2010134334A1 (ja) * 2009-05-22 2010-11-25 住友化学株式会社 半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法
KR101671552B1 (ko) * 2009-06-05 2016-11-01 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 센서, 반도체 기판 및 반도체 기판의 제조 방법
JP5414415B2 (ja) * 2009-08-06 2014-02-12 株式会社日立製作所 半導体受光素子及びその製造方法
SG169922A1 (en) * 2009-09-24 2011-04-29 Taiwan Semiconductor Mfg Improved semiconductor sensor structures with reduced dislocation defect densities and related methods for the same
JP5969811B2 (ja) * 2011-05-09 2016-08-17 アイメックＩｍｅｃ シリコン・フォトニクスプラットフォーム上でのフォトニックデバイスの共集積化方法
US8546250B2 (en) 2011-08-18 2013-10-01 Wafertech Llc Method of fabricating vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
US9709740B2 (en) * 2012-06-04 2017-07-18 Micron Technology, Inc. Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US9213137B2 (en) * 2013-07-12 2015-12-15 Globalfoundries Singapore Pte. Ltd. Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same
WO2015016942A1 (en) * 2013-08-02 2015-02-05 Intel Corporation Low voltage photodetectors
US10096474B2 (en) 2013-09-04 2018-10-09 Intel Corporation Methods and structures to prevent sidewall defects during selective epitaxy
EP3042390A4 (en) * 2013-09-04 2017-04-12 Intel Corporation Methods and structures to prevent sidewall defects during selective epitaxy
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
US9748307B2 (en) 2014-11-13 2017-08-29 Artilux Inc. Light absorption apparatus
KR102284657B1 (ko) 2015-01-05 2021-08-02 삼성전자 주식회사 포토 다이오드 및 이를 포함하는 광통신 시스템
KR102279162B1 (ko) * 2015-03-03 2021-07-20 한국전자통신연구원 게르마늄 온 인슐레이터 기판 및 그의 형성방법
EP3734661A3 (en) * 2015-07-23 2021-03-03 Artilux Inc. High efficiency wide spectrum sensor
US9917189B2 (en) * 2015-07-31 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for detecting presence and location of defects in a substrate
US9954016B2 (en) 2015-08-04 2018-04-24 Artilux Corporation Germanium-silicon light sensing apparatus
US10707260B2 (en) 2015-08-04 2020-07-07 Artilux, Inc. Circuit for operating a multi-gate VIS/IR photodiode
US10761599B2 (en) 2015-08-04 2020-09-01 Artilux, Inc. Eye gesture tracking
US10861888B2 (en) 2015-08-04 2020-12-08 Artilux, Inc. Silicon germanium imager with photodiode in trench
CN115824395B (zh) 2015-08-27 2023-08-15 光程研创股份有限公司 宽频谱光学传感器
US10739443B2 (en) 2015-11-06 2020-08-11 Artilux, Inc. High-speed light sensing apparatus II
US10741598B2 (en) 2015-11-06 2020-08-11 Atrilux, Inc. High-speed light sensing apparatus II
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
IL242952B (en) 2015-12-06 2021-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Photodetector-arrays and methods of fabrication thereof
GB2549951B (en) * 2016-05-03 2019-11-20 Metodiev Lavchiev Ventsislav Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range
US20170350752A1 (en) * 2016-06-01 2017-12-07 Ventsislav Metodiev Lavchiev Light emitting structures and systems on the basis of group iv material(s) for the ultraviolet and visible spectral ranges
CN109642985B (zh) * 2016-07-13 2021-03-12 洛克利光子有限公司 模式转换器及其制造方法
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
CN111868929B (zh) 2018-02-23 2021-08-03 奥特逻科公司 光检测装置及其光检测方法
CN112236686B (zh) 2018-04-08 2022-01-07 奥特逻科公司 光探测装置
TWI795562B (zh) 2018-05-07 2023-03-11 美商光程研創股份有限公司 雪崩式之光電晶體
US10969877B2 (en) 2018-05-08 2021-04-06 Artilux, Inc. Display apparatus
JP6836547B2 (ja) * 2018-05-21 2021-03-03 日本電信電話株式会社 光検出器
US10861896B2 (en) * 2018-07-27 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Capping structure to reduce dark current in image sensors
US20240405148A1 (en) * 2021-10-06 2024-12-05 Analog Devices, Inc. Monolithic multi-wavelength optical devices
EP4167269A1 (en) * 2021-10-15 2023-04-19 Infineon Technologies AG Heteroepitaxial semiconductor device and method for fabricating a heteroepitaxial semiconductor device
US20240347561A1 (en) * 2022-11-10 2024-10-17 The Board Of Trustees Of The University Of Arkansas Visible to longwave infrared photodetector on silicon

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177742A (ja) * 1985-02-01 1986-08-09 Mitsubishi Electric Corp 半導体装置
JPS63216386A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 半導体受光装置
JPH01184878A (ja) * 1988-01-13 1989-07-24 Mitsubishi Electric Corp 横型ｐｉｎフオトダイオードの製造方法
JPH03125458A (ja) * 1989-10-11 1991-05-28 Canon Inc 単結晶領域の形成方法及びそれを用いた結晶物品
US5162891A (en) * 1991-07-03 1992-11-10 International Business Machines Corporation Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same
KR100259063B1 (ko) * 1992-06-12 2000-06-15 김영환 Ccd 영상소자
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
US6057586A (en) * 1997-09-26 2000-05-02 Intel Corporation Method and apparatus for employing a light shield to modulate pixel color responsivity
JP3501265B2 (ja) * 1997-10-30 2004-03-02 富士通株式会社 半導体装置の製造方法
KR100610396B1 (ko) 1998-02-27 2006-08-09 노쓰 캐롤라이나 스테이트 유니버시티 마스크를 통한 측면 과성장에 의한 질화갈륨 반도체층을 제조하는 방법 및 제조된 질화갈륨 반도체 구조
US6500257B1 (en) * 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
JP4032538B2 (ja) 1998-11-26 2008-01-16 ソニー株式会社 半導体薄膜および半導体素子の製造方法
JP3824446B2 (ja) * 1999-05-28 2006-09-20 シャープ株式会社 固体撮像装置の製造方法
US6396046B1 (en) * 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
JP3455512B2 (ja) * 1999-11-17 2003-10-14 日本碍子株式会社 エピタキシャル成長用基板およびその製造方法
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP3827909B2 (ja) 2000-03-21 2006-09-27 シャープ株式会社 固体撮像装置およびその製造方法
GB0014961D0 (en) * 2000-06-20 2000-08-09 Koninkl Philips Electronics Nv Light-emitting matrix array display devices with light sensing elements
JP2002314116A (ja) * 2001-04-09 2002-10-25 Seiko Epson Corp Ｐｉｎ構造のラテラル型半導体受光素子
JP3912024B2 (ja) * 2001-04-09 2007-05-09 セイコーエプソン株式会社 Ｐｉｎ構造のラテラル型半導体受光素子
GB0111207D0 (en) 2001-05-08 2001-06-27 Btg Int Ltd A method to produce germanium layers
JP4375517B2 (ja) * 2001-07-23 2009-12-02 日本電気株式会社 液晶表示装置
US7248297B2 (en) * 2001-11-30 2007-07-24 The Board Of Trustees Of The Leland Stanford Junior University Integrated color pixel (ICP)
US6835954B2 (en) * 2001-12-29 2004-12-28 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescent display device
US7098069B2 (en) * 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
TW546853B (en) * 2002-05-01 2003-08-11 Au Optronics Corp Active type OLED and the fabrication method thereof

Also Published As

Publication number Publication date
AU2003303492A8 (en) 2004-07-29
JP2006513584A (ja) 2006-04-20
US20060057825A1 (en) 2006-03-16
EP1573790A2 (en) 2005-09-14
DE60310762D1 (de) 2007-02-08
TW200419721A (en) 2004-10-01
TWI232544B (en) 2005-05-11
JP2011238942A (ja) 2011-11-24
JP5489387B2 (ja) 2014-05-14
WO2004061911A8 (en) 2005-08-25
US7297569B2 (en) 2007-11-20
WO2004061911A3 (en) 2004-09-16
EP1573790B1 (en) 2006-12-27
AU2003303492A1 (en) 2004-07-29
US7012314B2 (en) 2006-03-14
WO2004061911A2 (en) 2004-07-22
US20040121507A1 (en) 2004-06-24
KR20050093785A (ko) 2005-09-23

Similar Documents

Publication Publication Date Title
DE60310762T2 (de) Halbleitervorrichtung mit reduzierten defekten in den aktiven bereichen und einzigartigem kontaktschema
DE102012025953B4 (de) Photonen-emitter oder photonen-detektor mit einerverspannten halbleiterstruktur
DE19913355B4 (de) Integrierte opto-elektronische Schaltung mit ZnO-Schicht als Lichtwellenleiter
DE602005001401T2 (de) Struktur und verfahren für die herstellung eines cmos-kompatiblen hochgeschwindigkeits-ge-on-isolator-photodetektors
DE19510631B4 (de) Halbleiterbauelement
DE69418143T2 (de) Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial
DE112004002641B4 (de) Verfahren zur Herstellung eines verformten FinFET-Kanals
DE102018124677A1 (de) SPAD-Bildsensor und zugehöriges Herstellungsverfahren
DE102017119031A1 (de) Bildsensor mit einer hochabsorbierenden schicht
DE3300986A1 (de) Mehrschichtige optische integrierte schaltung
DE102020101440A1 (de) In ein Multimode-Interferometer eingebetteter Germanium-Fotodetektor
DE69510638T2 (de) Verfahren zur Herstellung eines lichtempfindlichen Bauelements aus Silicium
DE19700520A1 (de) Halbleiter-Fotodetektorvorrichtung
DE112008002003B4 (de) Plasmonverstärkte, elektromagnetische Strahlung emittierende Vorrichtungen und Verfahren zum Fertigen derselben
DE3711617A1 (de) Monolithisch integrierte wellenleiter-fotodioden-fet-kombination
DE102020110876B4 (de) Lichtererkennungsvorrichtung, optische vorrichtung und verfahren zu deren herstellung
DE19539033A1 (de) Halbleiterbauelement
DE102021106176A1 (de) In-situ-kappe für germanium-fotodetektor
DE112018000637B4 (de) Durch Wachstum nach schnellem Aufschmelzen hergestellter Fotodetektor
DE19838430C2 (de) Verfahren zur Herstellung eines Arrays von Photodetektoren
DE19838442C1 (de) Verfahren zur Herstellung von Photodetektoren
DE19838373C2 (de) Verfahren zur Herstellung eines Arrays von Dünnfilmphotodioden
JP2003031790A (ja) 半導体装置およびその製造方法
DE102020113076B4 (de) Kreisförmige gitterstruktur für photonisches bauelement und verfahren
EP1746638A2 (en) Semiconductor devices with reduced active region defectcs and unique contacting schemes

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NOBLE PEAK VISION CORP. (N. D. GES. D. STAATES, US