JP5593050B2 - 半導体基板、電子デバイス、および半導体基板の製造方法 - Google Patents
半導体基板、電子デバイス、および半導体基板の製造方法 Download PDFInfo
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- JP5593050B2 JP5593050B2 JP2009229934A JP2009229934A JP5593050B2 JP 5593050 B2 JP5593050 B2 JP 5593050B2 JP 2009229934 A JP2009229934 A JP 2009229934A JP 2009229934 A JP2009229934 A JP 2009229934A JP 5593050 B2 JP5593050 B2 JP 5593050B2
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- 239000004065 semiconductor Substances 0.000 title claims description 506
- 239000000758 substrate Substances 0.000 title claims description 370
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title description 75
- 239000013078 crystal Substances 0.000 claims description 733
- 150000001875 compounds Chemical class 0.000 claims description 384
- 230000005764 inhibitory process Effects 0.000 claims description 211
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 99
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- 238000002050 diffraction method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 820
- 239000010408 film Substances 0.000 description 115
- 230000007547 defect Effects 0.000 description 82
- 239000010409 thin film Substances 0.000 description 82
- 239000002346 layers by function Substances 0.000 description 43
- 238000000137 annealing Methods 0.000 description 38
- 239000007789 gas Substances 0.000 description 31
- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- 238000000635 electron micrograph Methods 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 239000002994 raw material Substances 0.000 description 18
- 239000000543 intermediate Substances 0.000 description 17
- 238000005259 measurement Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 230000003321 amplification Effects 0.000 description 15
- 238000003199 nucleic acid amplification method Methods 0.000 description 15
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 10
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- 238000001451 molecular beam epitaxy Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000007806 chemical reaction intermediate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012887 quadratic function Methods 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- DAVKOMBJLJVVLC-UHFFFAOYSA-N chloroform;hydrobromide Chemical compound Br.ClC(Cl)Cl DAVKOMBJLJVVLC-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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Description
図6から図7に示された手順に従って、SOI基板102の上に、開口105が形成された阻害層104と、開口105の内部に結晶成長したGe結晶層106とを備える半導体基板を作製した。SOI基板102の上には、25000個のGe結晶層106を作製した。また、図6から図10に示された手順に従って、上記Ge結晶層106ごとに、電子デバイス100を作製した。電子デバイスは、25000個製造した。
2500個の領域803を備えた半導体基板801を、以下の通り作製した。SOI基板802のSi基板862には、単結晶Si基板を用いた。酸化シリコンの阻害層804を、CVD法により形成した後、フォトリソグラフィ法により開口806を形成した。開口806のアスペクト比は、1とした。開口806の形状は、1辺が100μmの正方形として、隣接する開口806同士は、500μmの間隔をおいて配置した。開口806の内部に、Ge結晶層820を形成した。Ge結晶層820は、原料ガスとしてGeH4を用いて、MOCVD法により形成した。Ge結晶層820のSOI基板802の表面と略平行な方向における最大幅は、2μmとした。Ge結晶層820を形成した後、800℃で、2分間の高温アニールと、680℃で、2分間の低温アニールとを繰り返す2段階アニールを実施した。上記2段階アニールを、10回実施した。
Si結晶層866とGe結晶層820との間に、500℃以下の温度で形成されたGaAs層のバッファ層を備えた半導体基板801を作製した。上記半導体基板801は、Si結晶層866とGe結晶層820との間にバッファ層を形成した以外は、実施例2と同様に作製した。バッファ層としてのGaAs層は、原料ガスとしてTM−GaおよびAsH3を用いて、成長温度を450℃として、MOCVD法により形成した。これにより、化合物半導体機能層824の結晶性を、ある程度向上できた。
Ge結晶層820の表面がPH3ガスで処理された半導体基板801を作製した。上記半導体基板801は、InGaPのバッファ層822を用いない点と、Ge結晶層820の化合物半導体機能層824に対向する面をPH3ガスで処理した後、化合物半導体機能層824を形成した点以外は、実施例2と同様に作製した。これにより、化合物半導体機能層824の結晶性を、ある程度向上できた。
図22は、実施例5から実施例13で使用した半導体基板の断面の模式図である。当該半導体基板は、Si基板2102と、阻害層2104と、Ge結晶層2106と、化合物半導体2108とを備える。化合物半導体2108は、例えば、シード化合物半導体結晶108を含む。
図23から図27は、アニール温度とGe結晶層2106の平坦性との関係示す。図23は、アニールしていないGe結晶層2106の断面形状を示す。図24、図25、図26および図27は、それぞれ、700℃、800℃、850℃、900℃でアニールを実施した場合の、Ge結晶層2106の断面形状を示す。Ge結晶層2106の断面形状は、レーザー顕微鏡により観察した。各図の縦軸は、Si基板2102の主面に垂直な方向における距離を示し、Ge結晶層2106の膜厚を示す。各図の横軸は、Si基板2102の主面に平行な方向における距離を示す。
Si基板2102と、阻害層2104と、Ge結晶層2106と、素子形成層として機能する化合物半導体2108とを備えた半導体基板を作製して、阻害層2104に形成した開口105の内部に成長する結晶の成長速度と、被覆領域の大きさおよび開口105の大きさとの関係を調べた。実験は、阻害層2104に形成される被覆領域の平面形状および開口105の底面形状を変えて、一定時間の間に成長する化合物半導体2108の膜厚を測定することで実施した。
被覆領域の一辺の長さを200μm、500μm、700μm、1000μm、1500μm、2000μm、3000μmまたは4250μmに設定して、それぞれの場合について、実施例6の場合と同様の手順で半導体基板を作製して、開口105の内部に形成された化合物半導体2108の膜厚を測定した。本実施例では、Si基板2102の上に同一の大きさのSiO2層が複数配置されるように、当該SiO2層を形成した。また、上記複数のSiO2層が互いに離間するよう、当該SiO2層を形成した。開口105の底面形状は、実施例6と同様に、一辺が10μmの正方形の場合、一辺が20μmの正方形の場合、短辺が30μmで長辺が40μmの長方形である場合の3通りについて実験した。Ge結晶層2106および化合物半導体2108の成長条件は実施例6と同一の条件に設定した。
トリメチルガリウムの供給量を半分にして、化合物半導体2108の成長速度を約半分にした以外は実施例7の場合と同様にして、開口105の内部に形成された化合物半導体2108の膜厚を測定した。なお、実施例8では、被覆領域の一辺の長さを200μm、500μm、1000μm、2000μm、3000μmまたは4250μmに設定して、開口105の底面形状が一辺が10μmの正方形の場合について、実験を実施した。
実施例6と同様にして、Si基板2102と、阻害層2104と、Ge結晶層2106と、化合物半導体2108の一例としてのGaAs結晶とを備えた半導体基板を作製した。本実施例では、Si基板2102の表面の(100)面に阻害層2104を形成した。図41から図43に、上記半導体基板に形成されたGaAs結晶の表面の電子顕微鏡写真を示す。
実施例6と同様にして、Si基板2102と、阻害層2104と、Ge結晶層2106と、化合物半導体2108の一例としてのGaAs層とを備えた半導体基板を作製した。本実施例においては、Ge結晶層2106と、化合物半導体2108との間に中間層を形成した。本実施例において、被覆領域の平面形状は、一辺の長さが200μmの正方形であった。開口105の底面形状は、一辺が10μmの正方形であった。CVD法により、開口105の内部に、膜厚が850nmのGe結晶層2106を形成した後、800℃でアニールを実施した。
実施例10と同様にして、Si基板2102と、阻害層2104と、Ge結晶層2106と、中間層と、化合物半導体2108の一例としてのGaAs層とを備えた半導体基板を作製した後、得られた半導体基板を用いてHBT素子構造を作製した。HBT素子構造は、以下の手順で作製した。まず、実施例10の場合と同様にして、半導体基板を作製した。なお、本実施例では、被覆領域の平面形状は、一辺の長さが50μmの正方形であった。開口105の底面形状は、一辺が20μmの正方形であった。それ以外の条件については、実施例10の場合と同一の条件で半導体基板をした。
実施例11と同様にして、実施例11と同様の構造を有するHBT素子を3つ作製した。作製した3つのHBT素子を並列接続した。本実施例では、被覆領域の平面形状は、長辺が100μm、短辺が50μmの長方形であった。また、上記被覆領域の内部に、3つの開口105を設けた。開口105の底面形状は、すべて、一辺が15μmの正方形であった。それ以外の条件については、実施例11の場合と同一の条件でHBT素子を作製した。
開口105の底面積を変えてHBT素子を作製して、開口105の底面積と、得られたHBT素子の電気特性との関係を調べた。実施例11と同様にして、HBT素子を作製した。HBT素子の電気特性として、ベースシート抵抗値Rb[Ω/□]および電流増幅率βを測定した。電流増幅率βは、コレクタ電流の値をベース電流の値で除して求めた。本実施例では、開口105の底面形状が、一辺が20μmの正方形、短辺が20μmで長辺が40μmの長方形、一辺が30μmの正方形、短辺が30μmで長辺が40μmの長方形、または、短辺が20μmで長辺が80μmの長方形の場合のそれぞれについて、HBT素子を作製した。
図48は、作製した半導体基板における結晶の断面における走査型電子顕微鏡写真を示す。図49は、図48の写真を見やすくする目的で示した模写図である。当該半導体基板は、以下の方法により作製された。(100)面を主面とするSi基板2202を用意し、Si基板2202の上に、絶縁膜としてSiO2膜2204を形成した。SiO2膜2204に、Si基板2202の主面に達する開口105を形成し、当該開口105の内部に露出しているSi基板2202の主面に、モノゲルマンを原料として用いたCVD法により、Ge結晶2206を形成した。Si基板2202、SiO2膜2204、およびGe結晶2206は、それぞれ、Si結晶層166、阻害層104、Ge結晶層106と同等である。
実施例14と同様に、Si基板2202の上にGe結晶2206を選択成長させ、半導体基板を形成した。当該半導体基板に、800℃と680℃の温度を10回繰り返すサイクルアニールを施した。得られた半導体基板(以下試料Aと呼ぶ)のGe結晶2206とSi基板2202の界面でのSiおよびGeの元素濃度を、エネルギー分散型蛍光X線分析装置(以下EDXと記すことがある)により評価した。また同様に、Si基板2202上にGe結晶を選択成長した半導体基板について、サイクルアニールを施さない半導体基板(以下試料Bと呼ぶ)を形成し、同様にEDXにより評価した。
実施例15の試料Aと同様にサイクルアニールを施したGe結晶2206上に、MOCVD法によりGaAs結晶2208を成長させ、当該GaAs結晶2208上にさらにGaAs層およびInGaP層からなる多層構造膜を積層して試料Cを作成した。また、Ge結晶2206にポストアニールを施していないことを除いては、上記と同様にGaAs結晶2208および多層構造膜を形成して試料Dを作成した。
実施例17では、阻害層の幅を変えることでデバイス用薄膜の成長速度が変化することを、本発明者らの実験データに基づき説明する。デバイス用薄膜とは、デバイス用薄膜が加工されて半導体デバイスの一部になる薄膜をいう。たとえばシリコン結晶上に複数の化合物半導体薄膜を順次積層し、積層された化合物半導体薄膜を加工して半導体デバイスを形成する場合、積層された化合物半導体薄膜はデバイス用薄膜に含まれる。また、積層された化合物半導体薄膜とシリコン結晶との間に形成されるバッファ層もデバイス用薄膜に含まれ、バッファ層あるいは化合物半導体薄膜の結晶成長の核となるシード層もデバイス用薄膜に含まれる。
図72は、本発明者らが製造したヘテロ接合バイポーラトランジスタ(HBT)3100の平面図を示す。HBT3100は20個のHBT素子3150を並列に接続した構造を有する。なお、図72においてベース基板の一部を示し、1つのHBT3100の部分だけを示す。同一のベース基板にテストパターンその他の半導体素子も形成したが、ここでは説明を省略する。
Claims (17)
- ベース基板と、絶縁層と、Si結晶層とをこの順に備える半導体基板において、
前記Si結晶層上に設けられ、化合物半導体の結晶成長を阻害する阻害層であって、前記Si結晶層にまで貫通する開口を有する阻害層と、
前記開口の内部に設けられたGeを含むシード結晶と、
前記シード結晶に格子整合または擬格子整合している化合物半導体と、を備え、
前記Si結晶層と前記シード結晶との界面に接して、前記Si結晶層の内部にSi 1−x Ge x 層(0<x<1)を含み、
前記Si 1−x Ge x 層におけるGeの平均組成xが、前記界面からの距離が5nm以上10nm以下の領域において60%以上である
半導体基板。 - 前記化合物半導体の前記開口に含まれる部分が(√3)/3以上のアスペクト比を有する
請求項1に記載の半導体基板。 - 前記化合物半導体が、
前記シード結晶上で、前記阻害層の表面よりも凸に結晶成長したシード化合物半導体結晶と、
前記シード化合物半導体結晶を核として前記阻害層に沿ってラテラル成長したラテラル成長化合物半導体結晶と
を有する請求項1または請求項2に記載の半導体基板。 - 前記ラテラル成長化合物半導体結晶が、
前記シード化合物半導体結晶を核として前記阻害層に沿ってラテラル成長した第1化合物半導体結晶と、
前記第1化合物半導体結晶を核として前記阻害層に沿って前記第1化合物半導体結晶と異なる方向にラテラル成長した第2化合物半導体結晶と
を有する請求項3に記載の半導体基板。 - 前記ラテラル成長化合物半導体結晶が3−5族化合物半導体または2−6族化合物半導体である
請求項3または請求項4に記載の半導体基板。 - 前記阻害層が複数の前記開口を有し、
前記複数の開口のそれぞれの内部に設けられたシード結晶に格子整合または擬格子整合している前記化合物半導体は、隣接する前記開口の内部に設けられたシード結晶に格子整合または擬格子整合している前記化合物半導体と接していない請求項1から請求項5のいずれか一項に記載の半導体基板。 - 前記シード結晶が、結晶成長したSixGe1−x(0≦x<1)結晶または500℃以下の温度で結晶成長したGaAsを含む請求項1から請求項6のいずれか一項に記載の半導体基板。
- 前記シード結晶の前記化合物半導体との界面が気体のP化合物により表面処理されている請求項1から請求項7のいずれか一項に記載の半導体基板。
- 前記化合物半導体が3−5族化合物半導体または2−6族化合物半導体である請求項1から請求項8のいずれか一項に記載の半導体基板。
- 前記化合物半導体が3−5族化合物半導体であり、3族元素としてAl、Ga、Inのうち少なくとも1つを含み、5族元素としてN、P、As、Sbのうち少なくとも1つを含む請求項1から請求項9のいずれか一項に記載の半導体基板。
- 前記化合物半導体はPを含む3−5族化合物半導体からなるバッファ層を含み、
前記バッファ層が前記シード結晶に格子整合または擬格子整合している
請求項1から請求項10のいずれか一項に記載の半導体基板。 - 前記Si結晶層における前記シード結晶に覆われていない部分に設けられたSi半導体デバイスを更に備える請求項1から請求項11のいずれか一項に記載の半導体基板。
- 前記ベース基板が単結晶のSiであり、
前記ベース基板における前記シード結晶が設けられていない部分に設けられたSi半導体デバイスを更に備える
請求項1から請求項12のいずれか一項に記載の半導体基板。 - 前記Si結晶層の前記シード結晶が形成される面は、(100)面、(110)面、(111)面、(100)面と結晶学的に等価な面、(110)面と結晶学的に等価な面、および(111)面と結晶学的に等価な面、から選択されたいずれか一つの結晶面から傾いたオフ角を有する請求項1から請求項13のいずれか一項に記載の半導体基板。
- 前記開口の底面の最大幅が40μm以下である請求項1から請求項14のいずれか一項に記載の半導体基板。
- サブストレートと、
前記サブストレート上に設けられた絶縁層と、
前記絶縁層上に設けられたSi結晶層と、
前記Si結晶層上に設けられ化合物半導体の結晶成長を阻害する阻害層であって、前記Si結晶層にまで貫通する開口を有する阻害層と、
前記開口の内部に設けられたGeを含むシード結晶と、
前記シード結晶に格子整合または擬格子整合する化合物半導体と、
前記化合物半導体を用いて形成された半導体デバイスと
を備え、
前記Si結晶層と前記シード結晶との界面に接して、前記Si結晶層の内部にSi 1−x Ge x 層(0<x<1)を含み、
前記Si 1−x Ge x 層におけるGeの平均組成xが、前記界面からの距離が5nm以上10nm以下の領域において60%以上である
電子デバイス。 - ベース基板と、絶縁層と、Si結晶層とをこの順に有するSOI基板を準備する段階と、
前記Si結晶層上に、化合物半導体の結晶成長を阻害する阻害層を設ける段階と、
前記Si結晶層にまで貫通する開口を前記阻害層に形成する段階と、
前記開口の内部にGeを含むシード結晶を成長させる段階と、
前記Si結晶層と前記シード結晶との界面に接して、前記Si結晶層の内部にSi 1−x Ge x 層(0<x<1)を形成する段階と、
前記シード結晶に格子整合または擬格子整合する前記化合物半導体を結晶成長させる段階とを備え、
前記Si 1−x Ge x 層におけるGeの平均組成xが、前記界面からの距離が5nm以上10nm以下の領域において60%以上である
半導体基板の製造方法。
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