JP5455622B2 - 電界効果トランジスタのゲート誘電体の製造方法 - Google Patents

電界効果トランジスタのゲート誘電体の製造方法 Download PDF

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JP5455622B2
JP5455622B2 JP2009510056A JP2009510056A JP5455622B2 JP 5455622 B2 JP5455622 B2 JP 5455622B2 JP 2009510056 A JP2009510056 A JP 2009510056A JP 2009510056 A JP2009510056 A JP 2009510056A JP 5455622 B2 JP5455622 B2 JP 5455622B2
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gate dielectric
plasma
oxide layer
layer
substrate
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JP2009536459A (ja
JP2009536459A5 (https=
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タイ， チェン シュア，
コリー クザルニク，
アンドレアス， ジー． ヘゲドゥス，
クリストファー ショーン オルセン，
クハレド ズィー． アハメド，
フィリップ アラン クラウス，
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Applied Materials Inc
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Applied Materials Inc
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    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
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    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H10P14/6326—Deposition processes
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    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
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    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
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    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
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    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
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    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
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    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009510056A 2006-05-05 2007-05-02 電界効果トランジスタのゲート誘電体の製造方法 Active JP5455622B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/381,960 2006-05-05
US11/381,960 US7727828B2 (en) 2005-10-20 2006-05-05 Method for fabricating a gate dielectric of a field effect transistor
PCT/US2007/068056 WO2007131051A1 (en) 2006-05-05 2007-05-02 Method for fabricating a gate dielectric of a field effect transistor

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JP2009536459A JP2009536459A (ja) 2009-10-08
JP2009536459A5 JP2009536459A5 (https=) 2010-05-27
JP5455622B2 true JP5455622B2 (ja) 2014-03-26

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US (1) US7727828B2 (https=)
EP (1) EP2022091A1 (https=)
JP (1) JP5455622B2 (https=)
KR (1) KR20090007633A (https=)
CN (1) CN101438398A (https=)
TW (1) TWI415193B (https=)
WO (1) WO2007131051A1 (https=)

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US20070093013A1 (en) 2007-04-26
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