JP5355006B2 - 表示装置 - Google Patents

表示装置 Download PDF

Info

Publication number
JP5355006B2
JP5355006B2 JP2008237282A JP2008237282A JP5355006B2 JP 5355006 B2 JP5355006 B2 JP 5355006B2 JP 2008237282 A JP2008237282 A JP 2008237282A JP 2008237282 A JP2008237282 A JP 2008237282A JP 5355006 B2 JP5355006 B2 JP 5355006B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
field effect
effect transistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008237282A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009094492A5 (enExample
JP2009094492A (ja
Inventor
舜平 山崎
郁子 川俣
厚 宮口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008237282A priority Critical patent/JP5355006B2/ja
Publication of JP2009094492A publication Critical patent/JP2009094492A/ja
Publication of JP2009094492A5 publication Critical patent/JP2009094492A5/ja
Application granted granted Critical
Publication of JP5355006B2 publication Critical patent/JP5355006B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008237282A 2007-09-20 2008-09-17 表示装置 Expired - Fee Related JP5355006B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008237282A JP5355006B2 (ja) 2007-09-20 2008-09-17 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007243925 2007-09-20
JP2007243925 2007-09-20
JP2008237282A JP5355006B2 (ja) 2007-09-20 2008-09-17 表示装置

Publications (3)

Publication Number Publication Date
JP2009094492A JP2009094492A (ja) 2009-04-30
JP2009094492A5 JP2009094492A5 (enExample) 2011-08-11
JP5355006B2 true JP5355006B2 (ja) 2013-11-27

Family

ID=40470673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008237282A Expired - Fee Related JP5355006B2 (ja) 2007-09-20 2008-09-17 表示装置

Country Status (2)

Country Link
US (1) US8232598B2 (enExample)
JP (1) JP5355006B2 (enExample)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101461206B1 (ko) * 2007-05-17 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
JP5394043B2 (ja) * 2007-11-19 2014-01-22 株式会社半導体エネルギー研究所 半導体基板及びそれを用いた半導体装置、並びにそれらの作製方法
JP5478199B2 (ja) * 2008-11-13 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8581237B2 (en) * 2008-12-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
KR101127574B1 (ko) * 2009-04-06 2012-03-23 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
JP5502864B2 (ja) * 2009-07-01 2014-05-28 シャープ株式会社 アクティブマトリクス基板及び有機ｅｌ表示装置
US8314018B2 (en) * 2009-10-15 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101996773B1 (ko) * 2009-10-21 2019-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102748818B1 (ko) * 2009-10-29 2024-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101629194B1 (ko) * 2009-10-30 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR101752348B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101752518B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG10201406989QA (en) * 2009-10-30 2014-12-30 Semiconductor Energy Lab Semiconductor device
CN104600074A (zh) * 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
KR101861980B1 (ko) * 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101708607B1 (ko) * 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104332177B (zh) * 2009-11-20 2018-05-08 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路，以及使用其的半导体器件
KR101928723B1 (ko) * 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065258A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102089200B1 (ko) * 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101720072B1 (ko) * 2009-12-11 2017-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
KR101913111B1 (ko) * 2009-12-18 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102714184B (zh) * 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102725842B (zh) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
KR102172360B1 (ko) * 2010-02-05 2020-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR20130007597A (ko) 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
WO2011111507A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101540039B1 (ko) * 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN104851810B (zh) 2010-04-23 2018-08-28 株式会社半导体能源研究所 半导体装置的制造方法
WO2012002186A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008304A1 (en) * 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012014790A1 (en) * 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101979758B1 (ko) * 2010-08-27 2019-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
TWI539453B (zh) * 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
JP5899220B2 (ja) * 2010-09-29 2016-04-06 ポスコ ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板
JP5908263B2 (ja) * 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
TWI621121B (zh) * 2011-01-05 2018-04-11 Semiconductor Energy Laboratory Co., Ltd. 儲存元件、儲存裝置、及信號處理電路
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2012146861A (ja) * 2011-01-13 2012-08-02 Toshiba Corp 半導体記憶装置
KR20210034703A (ko) * 2011-01-28 2021-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치
KR101133154B1 (ko) 2011-02-03 2012-04-06 디지털옵틱스 코포레이션 이스트 상이한 파장을 균일하게 수광하기 위한 차등 높이 실리콘을 포함하는 이면 조사 센서 패키지
KR101095945B1 (ko) * 2011-02-03 2011-12-19 테쎄라 노쓰 아메리카, 아이엔씨. 상이한 파장을 균일하게 수광하기 위한 흡광 재료를 포함하는 이면 조사 센서 패키지
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
JP6231735B2 (ja) * 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
KR101793048B1 (ko) * 2011-06-28 2017-11-21 삼성디스플레이 주식회사 평판표시장치용 백플레인 및 그의 제조방법
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9112037B2 (en) * 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9129681B2 (en) * 2012-04-13 2015-09-08 Sandisk Technologies Inc. Thin film transistor
TWI613813B (zh) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
CN103151368A (zh) * 2013-02-05 2013-06-12 京东方科技集团股份有限公司 一种阵列基板及oled显示装置
KR102114315B1 (ko) * 2013-08-21 2020-05-25 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치, 및 박막 트랜지스터 어레이 기판의 제조 방법
KR20150053314A (ko) * 2013-11-07 2015-05-18 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
SG11201604650SA (en) * 2013-12-26 2016-07-28 Semiconductor Energy Lab Semiconductor device
JP6258047B2 (ja) * 2014-01-27 2018-01-10 株式会社ジャパンディスプレイ 発光素子表示装置
US9443872B2 (en) * 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015159179A1 (en) * 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9082735B1 (en) * 2014-08-14 2015-07-14 Srikanth Sundararajan 3-D silicon on glass based organic light emitting diode display
KR102226236B1 (ko) * 2014-10-13 2021-03-11 엘지디스플레이 주식회사 유기 발광 표시 장치
TWI841974B (zh) * 2014-11-21 2024-05-11 日商半導體能源研究所股份有限公司 半導體裝置
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
WO2017081586A1 (en) * 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Display device, input/output device, and data processing device
WO2017125834A1 (en) * 2016-01-18 2017-07-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and data processor
US9905579B2 (en) * 2016-03-18 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6673731B2 (ja) 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法
CN107302011B (zh) * 2016-04-14 2020-11-20 群创光电股份有限公司 显示装置
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102827790B1 (ko) * 2016-10-14 2025-07-01 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102565380B1 (ko) * 2016-12-07 2023-08-10 삼성디스플레이 주식회사 박막 트랜지스터 기판
KR102733082B1 (ko) * 2016-12-30 2024-11-22 엘지디스플레이 주식회사 구동 박막 트랜지스터 및 이를 이용한 유기 발광 표시 장치
US10249695B2 (en) * 2017-03-24 2019-04-02 Apple Inc. Displays with silicon and semiconducting-oxide top-gate thin-film transistors
WO2018180842A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 Ｔｆｔ基板、ｔｆｔ基板の製造方法、表示装置
KR102324219B1 (ko) * 2017-04-24 2021-11-12 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN107256880B (zh) * 2017-06-27 2021-08-20 京东方科技集团股份有限公司 一种显示器阵列基板、制备方法和显示器
JP6616368B2 (ja) * 2017-09-14 2019-12-04 ファナック株式会社 レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置
KR102586225B1 (ko) * 2017-12-28 2023-10-06 엘지디스플레이 주식회사 유기발광 표시 장치 및 이의 제조방법
KR102568285B1 (ko) * 2017-12-28 2023-08-17 엘지디스플레이 주식회사 유기발광표시패널 및 이를 이용한 유기발광표시장치
KR102482992B1 (ko) * 2017-12-29 2022-12-29 엘지디스플레이 주식회사 유기 발광 표시 장치
CN108376672B (zh) 2018-03-15 2020-12-04 京东方科技集团股份有限公司 阵列基板及其制备方法，以及显示装置
US11201152B2 (en) * 2018-04-20 2021-12-14 Globalfoundries Inc. Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor
US11482622B2 (en) * 2018-12-10 2022-10-25 Intel Corporation Adhesion structure for thin film transistor
WO2022043826A1 (ja) 2020-08-27 2022-03-03 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
CN112038221A (zh) * 2020-09-17 2020-12-04 深圳市洁简达创新科技有限公司 一种堆叠态半导体芯片结构及其工艺方法
CN112951846B (zh) * 2021-01-28 2023-04-18 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
JP2024008440A (ja) * 2022-07-08 2024-01-19 株式会社ジャパンディスプレイ 半導体装置
CN115602684B (zh) * 2022-08-12 2024-07-05 东科半导体(安徽)股份有限公司 集成结构的制备方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837949A (ja) 1981-08-31 1983-03-05 Toshiba Corp 集積回路装置
JPS60154549A (ja) * 1984-01-24 1985-08-14 Fujitsu Ltd 半導体装置の製造方法
EP0251767A3 (en) 1986-06-30 1988-09-07 Canon Kabushiki Kaisha Insulated gate type semiconductor device and method of producing the same
JPS6354763A (ja) * 1986-08-25 1988-03-09 Mitsubishi Electric Corp 半導体装置
JP2516604B2 (ja) 1986-10-17 1996-07-24 キヤノン株式会社 相補性ｍｏｓ集積回路装置の製造方法
JPH01162376A (ja) 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5930608A (en) 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
JPH0590117A (ja) 1991-09-27 1993-04-09 Toshiba Corp 単結晶薄膜半導体装置
US5643801A (en) 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
JPH0714982A (ja) * 1993-06-21 1995-01-17 Hitachi Ltd 半導体集積回路装置及びその製造方法
EP0721662A1 (en) 1993-09-30 1996-07-17 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JPH07297377A (ja) 1994-04-21 1995-11-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE4433833A1 (de) 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JPH10214974A (ja) 1997-01-28 1998-08-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3409639B2 (ja) 1997-05-27 2003-05-26 日産自動車株式会社 半導体装置
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6525340B2 (en) * 2001-06-04 2003-02-25 International Business Machines Corporation Semiconductor device with junction isolation
JP4202012B2 (ja) * 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
CN100403543C (zh) 2001-12-04 2008-07-16 信越半导体株式会社 贴合晶片及贴合晶片的制造方法
JP4173672B2 (ja) 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6908797B2 (en) 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4731809B2 (ja) * 2002-12-17 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6881975B2 (en) 2002-12-17 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4554152B2 (ja) 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP2004247373A (ja) 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP4574118B2 (ja) 2003-02-12 2010-11-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7074656B2 (en) 2003-04-29 2006-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Doping of semiconductor fin devices
JP2004349513A (ja) 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP3927165B2 (ja) 2003-07-03 2007-06-06 株式会社東芝 半導体装置
US6821826B1 (en) 2003-09-30 2004-11-23 International Business Machines Corporation Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
US7034362B2 (en) 2003-10-17 2006-04-25 International Business Machines Corporation Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures
JP4465715B2 (ja) * 2004-04-16 2010-05-19 セイコーエプソン株式会社 薄膜デバイス、集積回路、電気光学装置、電子機器
DE102004031708B4 (de) 2004-06-30 2008-02-07 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Herstellen eines Substrats mit kristallinen Halbleitergebieten unterschiedlicher Eigenschaften
US7312487B2 (en) 2004-08-16 2007-12-25 International Business Machines Corporation Three dimensional integrated circuit
JP5017771B2 (ja) * 2004-08-20 2012-09-05 日本電気株式会社 相補型電界効果型トランジスタ、および電界効果型トランジスタの製造方法
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US7719103B2 (en) 2005-06-30 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
SG178762A1 (en) 2007-04-13 2012-03-29 Semiconductor Energy Lab Display device, method for manufacturing display device, and soi substrate
KR101461206B1 (ko) 2007-05-17 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
US8513678B2 (en) 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5460984B2 (ja) 2007-08-17 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009076879A (ja) 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP5268305B2 (ja) 2007-08-24 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7982250B2 (en) 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
US20090078939A1 (en) 2009-03-26
US8232598B2 (en) 2012-07-31
JP2009094492A (ja) 2009-04-30

Similar Documents

Publication Publication Date Title
JP5355006B2 (ja) 表示装置
KR101530230B1 (ko) Ｓｏｉ 기판의 제작 방법 및 반도체 장치의 제작 방법
JP5511172B2 (ja) 半導体装置の作製方法
JP5275608B2 (ja) 半導体基板の作製方法
CN100573884C (zh) 显示器件
JP5348926B2 (ja) Ｓｏｉ基板の製造方法
JP5512098B2 (ja) Ｓｏｉ基板の製造方法及び半導体装置の作製方法
US8642406B2 (en) Semiconductor device and method for manufacturing the same
TWI362231B (en) Display device
CN1790741B (zh) 半导体器件及制造该器件的方法
JP5619474B2 (ja) Ｓｏｉ基板の作製方法
JP2009033151A (ja) Ｓｏｉ基板の製造方法及び半導体装置の作製方法
JP2009135448A (ja) 半導体基板の作製方法及び半導体装置の作製方法
JP2011077504A (ja) 半導体装置の作製方法
TW529092B (en) Method of manufacturing a semiconductor device
US20100173472A1 (en) Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP5580010B2 (ja) 半導体装置の作製方法
JP5805973B2 (ja) 半導体基板の作製方法
US20100081251A1 (en) Method for manufacturing soi substrate
JP2011249789A (ja) 半導体基板の保持用トレイ、並びに半導体基板および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130514

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130531

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130820

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130827

R150 Certificate of patent or registration of utility model

Ref document number: 5355006

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees