JP5319533B2 - 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法 - Google Patents

転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法 Download PDF

Info

Publication number
JP5319533B2
JP5319533B2 JP2009529401A JP2009529401A JP5319533B2 JP 5319533 B2 JP5319533 B2 JP 5319533B2 JP 2009529401 A JP2009529401 A JP 2009529401A JP 2009529401 A JP2009529401 A JP 2009529401A JP 5319533 B2 JP5319533 B2 JP 5319533B2
Authority
JP
Japan
Prior art keywords
layer
layers
substrate
functional
multilayer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009529401A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010504649A (ja
JP2010504649A5 (https=
Inventor
ジョン エー． ロジャース，
ラルフ， ジー． ヌッツォ，
マシュー メイトル，
ヒョン チョ コー，
ジョンスン ユン，
エティエンヌ メナード，
アルフレッド， ジェイ． バカ，
Original Assignee
ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ filed Critical ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ
Publication of JP2010504649A publication Critical patent/JP2010504649A/ja
Publication of JP2010504649A5 publication Critical patent/JP2010504649A5/ja
Application granted granted Critical
Publication of JP5319533B2 publication Critical patent/JP5319533B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y10T156/1195—Delaminating from release surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Energy (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
  • Sustainable Development (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2009529401A 2006-09-20 2007-09-20 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法 Active JP5319533B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US82635406P 2006-09-20 2006-09-20
US60/826,354 2006-09-20
US94465307P 2007-06-18 2007-06-18
US60/944,653 2007-06-18
PCT/US2007/079070 WO2008036837A2 (en) 2006-09-20 2007-09-20 Release strategies for making transferable semiconductor structures, devices and device components

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013144886A Division JP5805712B2 (ja) 2006-09-20 2013-07-10 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法

Publications (3)

Publication Number Publication Date
JP2010504649A JP2010504649A (ja) 2010-02-12
JP2010504649A5 JP2010504649A5 (https=) 2010-10-21
JP5319533B2 true JP5319533B2 (ja) 2013-10-16

Family

ID=39201282

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009529401A Active JP5319533B2 (ja) 2006-09-20 2007-09-20 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
JP2013144886A Active JP5805712B2 (ja) 2006-09-20 2013-07-10 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
JP2015172848A Active JP6238141B2 (ja) 2006-09-20 2015-09-02 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013144886A Active JP5805712B2 (ja) 2006-09-20 2013-07-10 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
JP2015172848A Active JP6238141B2 (ja) 2006-09-20 2015-09-02 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法

Country Status (8)

Country Link
US (4) US7932123B2 (https=)
EP (1) EP2064734B1 (https=)
JP (3) JP5319533B2 (https=)
KR (3) KR101430587B1 (https=)
CN (2) CN101517700B (https=)
MY (1) MY149190A (https=)
TW (1) TWI438827B (https=)
WO (1) WO2008036837A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022091670A1 (ja) 2020-10-30 2022-05-05 信越化学工業株式会社 発光ダイオード供給基板の製造方法、発光ダイオードディスプレイの製造方法、発光ダイオードディスプレイの分割ユニットの製造方法、及び素子供給基板の製造方法

Families Citing this family (502)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080055581A1 (en) * 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
CN102683391B (zh) 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
JP5271541B2 (ja) * 2006-01-16 2013-08-21 パナソニック株式会社 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
KR101430587B1 (ko) 2006-09-20 2014-08-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US8005402B2 (en) * 2007-01-10 2011-08-23 Kabushiki Kaisha Toshiba Charging device, image forming apparatus and charging method
KR101519038B1 (ko) 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
US8097922B1 (en) * 2007-05-29 2012-01-17 The Regents Of The University Of California Nanometer-scale transistor architecture providing enhanced carrier mobility
US20100301454A1 (en) * 2007-11-20 2010-12-02 Yong-Hang Zhang Lattice matched multi-junction photovoltaic and optoelectronic devices
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
US8470701B2 (en) * 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
ES2530458T3 (es) * 2008-05-12 2015-03-03 Univ Villanova Células solares y método de fabricación de células solares
KR101405023B1 (ko) 2008-07-04 2014-06-10 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
US7927976B2 (en) * 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
US7999454B2 (en) * 2008-08-14 2011-08-16 Global Oled Technology Llc OLED device with embedded chip driving
KR20100027526A (ko) * 2008-09-02 2010-03-11 삼성전기주식회사 박막 소자 제조방법
WO2010036807A1 (en) * 2008-09-24 2010-04-01 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8097926B2 (en) * 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
KR101736722B1 (ko) 2008-11-19 2017-05-17 셈프리어스 아이엔씨. 전단-보조 탄성 스탬프 전사에 의한 프린팅 반도체 소자
JP2010135538A (ja) * 2008-12-04 2010-06-17 Sumco Corp 貼り合わせウェーハの製造方法
CN106449805B (zh) 2009-02-09 2019-03-12 艾克斯瑟乐普林特有限公司 集中器型光电（cpv）模块、接收器和子接收器及其形成方法
US8778199B2 (en) 2009-02-09 2014-07-15 Emoore Solar Power, Inc. Epitaxial lift off in inverted metamorphic multijunction solar cells
US8409911B2 (en) * 2009-02-24 2013-04-02 Sunpower Corporation Methods for metallization of solar cells
US8877648B2 (en) 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US20110199116A1 (en) * 2010-02-16 2011-08-18 NuPGA Corporation Method for fabrication of a semiconductor device and structure
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US8754533B2 (en) 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8362482B2 (en) 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
JP2012526396A (ja) 2009-05-04 2012-10-25 マイクロリンク デバイセズ， インク． 太陽電池アレイの組立技法及びそれにより形成された太陽電池
TWI592996B (zh) * 2009-05-12 2017-07-21 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
US8261660B2 (en) 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
US9165989B2 (en) 2009-09-16 2015-10-20 Semprius, Inc. High-yield fabrication of large-format substrates with distributed, independent control elements
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US8294159B2 (en) 2009-10-12 2012-10-23 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8536023B2 (en) * 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11984445B2 (en) 2009-10-12 2024-05-14 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US12027518B1 (en) 2009-10-12 2024-07-02 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US8666471B2 (en) 2010-03-17 2014-03-04 The Board Of Trustees Of The University Of Illinois Implantable biomedical devices on bioresorbable substrates
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US20110151114A1 (en) * 2009-12-18 2011-06-23 Cooledge Lighting, Inc. Composite patterning device and method for removing elements from host substrate by establishing conformal contact between device and a contact surface
US8334152B2 (en) 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
US8759917B2 (en) * 2010-01-04 2014-06-24 Samsung Electronics Co., Ltd. Thin-film transistor having etch stop multi-layer and method of manufacturing the same
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
EP2544598B1 (en) 2010-03-12 2020-05-06 The Board of Trustees of the University of Illionis Waterproof stretchable optoelectronics
US9161448B2 (en) 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
SG185547A1 (en) 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure
US8525228B2 (en) * 2010-07-02 2013-09-03 The Regents Of The University Of California Semiconductor on insulator (XOI) for high performance field effect transistors
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
CN104091862B (zh) * 2010-08-06 2017-06-23 晶元光电股份有限公司 半导体光电元件及其制作方法
KR101916968B1 (ko) 2010-08-06 2018-11-08 엑스-셀레프린트 리미티드 인쇄가능한 화합물 반도체 장치를 박리시키기 위한 물질 및 방법
US9142468B2 (en) * 2010-08-26 2015-09-22 Semprius, Inc. Structures and methods for testing printable integrated circuits
US12362219B2 (en) 2010-11-18 2025-07-15 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US11063071B1 (en) 2010-10-13 2021-07-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US12094892B2 (en) 2010-10-13 2024-09-17 Monolithic 3D Inc. 3D micro display device and structure
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11043523B1 (en) 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US12360310B2 (en) 2010-10-13 2025-07-15 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US20120091474A1 (en) * 2010-10-13 2012-04-19 NuPGA Corporation Novel semiconductor and optoelectronic devices
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US12080743B2 (en) 2010-10-13 2024-09-03 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11605663B2 (en) 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US10978501B1 (en) 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11984438B2 (en) 2010-10-13 2024-05-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US12144190B2 (en) 2010-11-18 2024-11-12 Monolithic 3D Inc. 3D semiconductor device and structure with bonding and memory cells preliminary class
US12136562B2 (en) 2010-11-18 2024-11-05 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11784082B2 (en) 2010-11-18 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US12068187B2 (en) 2010-11-18 2024-08-20 Monolithic 3D Inc. 3D semiconductor device and structure with bonding and DRAM memory cells
US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US12154817B1 (en) 2010-11-18 2024-11-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US12243765B2 (en) 2010-11-18 2025-03-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11615977B2 (en) 2010-11-18 2023-03-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11121021B2 (en) 2010-11-18 2021-09-14 Monolithic 3D Inc. 3D semiconductor device and structure
US11355381B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11901210B2 (en) 2010-11-18 2024-02-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US12033884B2 (en) 2010-11-18 2024-07-09 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11569117B2 (en) 2010-11-18 2023-01-31 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11854857B1 (en) 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US12125737B1 (en) 2010-11-18 2024-10-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US12272586B2 (en) 2010-11-18 2025-04-08 Monolithic 3D Inc. 3D semiconductor memory device and structure with memory and metal layers
US11521888B2 (en) 2010-11-18 2022-12-06 Monolithic 3D Inc. 3D semiconductor device and structure with high-k metal gate transistors
US12100611B2 (en) 2010-11-18 2024-09-24 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
US11482439B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
US12463076B2 (en) 2010-12-16 2025-11-04 Monolithic 3D Inc. 3D semiconductor device and structure
US9024310B2 (en) 2011-01-12 2015-05-05 Tsinghua University Epitaxial structure
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9184319B2 (en) 2011-01-14 2015-11-10 The Board Of Trustees Of The Leland Stanford Junior University Multi-terminal multi-junction photovoltaic cells
US8932898B2 (en) 2011-01-14 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Deposition and post-processing techniques for transparent conductive films
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US8889485B2 (en) 2011-06-08 2014-11-18 Semprius, Inc. Methods for surface attachment of flipped active componenets
EP2727134A4 (en) * 2011-06-28 2015-04-01 Saint Gobain Cristaux Et Detecteurs SEMICONDUCTOR SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
WO2013010113A1 (en) 2011-07-14 2013-01-17 The Board Of Trustees Of The University Of Illinois Non-contact transfer printing
US9064808B2 (en) 2011-07-25 2015-06-23 Synopsys, Inc. Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
US20130056044A1 (en) * 2011-08-03 2013-03-07 Crystal Solar, Inc. Photovoltaic module fabrication with thin single crystal epitaxial silicon devices
US9793144B2 (en) * 2011-08-30 2017-10-17 Evatec Ag Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer
US8609550B2 (en) * 2011-09-08 2013-12-17 Synopsys, Inc. Methods for manufacturing integrated circuit devices having features with reduced edge curvature
US9412727B2 (en) 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion
US8492187B2 (en) * 2011-09-29 2013-07-23 International Business Machines Corporation High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
EP2761677B1 (en) * 2011-09-30 2019-08-21 Microlink Devices, Inc. Light emitting diode fabricated by epitaxial lift-off
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP5854794B2 (ja) * 2011-11-25 2016-02-09 キヤノン株式会社 有機ｅｌ装置の製造方法
CN108389893A (zh) 2011-12-01 2018-08-10 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
US9352542B2 (en) * 2012-02-07 2016-05-31 Tokyo Ohka Kogyo Co., Ltd. Processing method and processing apparatus
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
EP2830492B1 (en) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
KR20130122089A (ko) * 2012-04-30 2013-11-07 (주)버티클 반도체 소자 제조 방법
JPWO2014017063A1 (ja) * 2012-07-24 2016-07-07 住友化学株式会社 半導体基板、半導体基板の製造方法及び複合基板の製造方法
KR101878754B1 (ko) 2012-09-13 2018-07-17 삼성전자주식회사 대면적 갈륨 나이트라이드 기판 제조방법
US8946052B2 (en) * 2012-09-26 2015-02-03 Sandia Corporation Processes for multi-layer devices utilizing layer transfer
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
EP2731126A1 (en) 2012-11-09 2014-05-14 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method for bonding bare chip dies
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US12051674B2 (en) 2012-12-22 2024-07-30 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11961827B1 (en) 2012-12-22 2024-04-16 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11967583B2 (en) 2012-12-22 2024-04-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
KR20140085198A (ko) * 2012-12-27 2014-07-07 서울바이오시스 주식회사 마스크 패턴을 이용한 기판 분리 방법 및 반도체 소자 제조 방법
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US12249538B2 (en) 2012-12-29 2025-03-11 Monolithic 3D Inc. 3D semiconductor device and structure including power distribution grids
US10840536B2 (en) 2013-02-06 2020-11-17 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with containment chambers
US9613911B2 (en) 2013-02-06 2017-04-04 The Board Of Trustees Of The University Of Illinois Self-similar and fractal design for stretchable electronics
US10497633B2 (en) 2013-02-06 2019-12-03 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with fluid containment
US10617300B2 (en) 2013-02-13 2020-04-14 The Board Of Trustees Of The University Of Illinois Injectable and implantable cellular-scale electronic devices
US9875935B2 (en) 2013-03-08 2018-01-23 Infineon Technologies Austria Ag Semiconductor device and method for producing the same
WO2014138465A1 (en) 2013-03-08 2014-09-12 The Board Of Trustees Of The University Of Illinois Processing techniques for silicon-based transient devices
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US12094965B2 (en) 2013-03-11 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US12100646B2 (en) 2013-03-12 2024-09-24 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US9812601B2 (en) * 2013-03-15 2017-11-07 Amberwave Inc. Solar celll
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US9580302B2 (en) 2013-03-15 2017-02-28 Versana Micro Inc. Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US9825229B2 (en) 2013-04-04 2017-11-21 The Board Of Trustees Of The University Of Illinois Purification of carbon nanotubes via selective heating
US10292263B2 (en) 2013-04-12 2019-05-14 The Board Of Trustees Of The University Of Illinois Biodegradable materials for multilayer transient printed circuit boards
WO2014169170A1 (en) 2013-04-12 2014-10-16 The Board Of Trustees Of The University Of Illinois Inorganic and organic transient electronic devices
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
WO2015006382A1 (en) * 2013-07-08 2015-01-15 Solexel, Inc. Thin film solar cell lamination stack for high volume manufacturing
KR20160067152A (ko) 2013-10-02 2016-06-13 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 장기 장착형 전자 장치
US10535685B2 (en) 2013-12-02 2020-01-14 The Regents Of The University Of Michigan Fabrication of thin-film electronic devices with non-destructive wafer reuse
US9058990B1 (en) * 2013-12-19 2015-06-16 International Business Machines Corporation Controlled spalling of group III nitrides containing an embedded spall releasing plane
WO2015156874A2 (en) * 2014-01-15 2015-10-15 The Regents Of The Univerity Of Michigan Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US12094829B2 (en) 2014-01-28 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US9123585B1 (en) 2014-02-11 2015-09-01 International Business Machines Corporation Method to form group III-V and Si/Ge FINFET on insulator
US9129863B2 (en) 2014-02-11 2015-09-08 International Business Machines Corporation Method to form dual channel group III-V and Si/Ge FINFET CMOS
US9236565B2 (en) * 2014-04-29 2016-01-12 National University Of Singapore Method for fabricating a magnetoresistive device
US9274277B2 (en) 2014-05-15 2016-03-01 Globalfoundries Inc. Waveguide devices with supporting anchors
CN113035851B (zh) 2014-06-18 2022-03-29 艾克斯展示公司技术有限公司 微组装led显示器
EP3158593A1 (en) 2014-06-18 2017-04-26 X-Celeprint Limited Systems and methods for preparing gan and related materials for micro assembly
KR102048378B1 (ko) 2014-06-18 2019-11-25 엑스-셀레프린트 리미티드 트랜스퍼가능한 반도체 구조체들의 방출을 제어하기 위한 시스템들 및 방법들
US9865600B2 (en) 2014-06-18 2018-01-09 X-Celeprint Limited Printed capacitors
US9929053B2 (en) 2014-06-18 2018-03-27 X-Celeprint Limited Systems and methods for controlling release of transferable semiconductor structures
TWI677963B (zh) 2014-06-18 2019-11-21 愛爾蘭商艾克斯瑟樂普林特有限公司 微組裝高頻裝置及陣列
CN117198903A (zh) 2014-07-20 2023-12-08 艾克斯展示公司技术有限公司 用于微转贴印刷的设备及方法
US9111983B1 (en) 2014-07-31 2015-08-18 Freescale Semiconductor, Inc. Methods for removing adhesive layers from semiconductor wafers
WO2016025430A1 (en) 2014-08-11 2016-02-18 The Board Of Trustees Of The University Of Illinois Epidermal photonic systems and methods
CA2957932A1 (en) 2014-08-11 2016-02-18 The Board Of Trustees Of The University Of Illinois Devices and related methods for epidermal characterization of biofluids
CN106999060A (zh) 2014-08-11 2017-08-01 伊利诺伊大学评议会 用于分析温度特性和热传送特性的表皮器件
KR20170047324A (ko) 2014-08-26 2017-05-04 엑스-셀레프린트 리미티드 마이크로 어셈블링된 하이브리드 디스플레이들 및 조명 엘리먼트들
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9468050B1 (en) 2014-09-25 2016-10-11 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9537069B1 (en) 2014-09-25 2017-01-03 X-Celeprint Limited Inorganic light-emitting diode with encapsulating reflector
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
US9922956B2 (en) * 2014-09-26 2018-03-20 Qualcomm Incorporated Microelectromechanical system (MEMS) bond release structure and method of wafer transfer for three-dimensional integrated circuit (3D IC) integration
US10538028B2 (en) 2014-11-17 2020-01-21 The Board Of Trustees Of The University Of Illinois Deterministic assembly of complex, three-dimensional architectures by compressive buckling
JP6483841B2 (ja) * 2015-01-30 2019-03-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体部品を製造するための方法、半導体部品およびデバイス
KR102533932B1 (ko) * 2015-03-18 2023-05-17 더 리젠츠 오브 더 유니버시티 오브 미시간 사전 패터닝된 메사들을 통한 스트레인 경감 에피택셜 리프트-오프
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US12477752B2 (en) 2015-09-21 2025-11-18 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11978731B2 (en) 2015-09-21 2024-05-07 Monolithic 3D Inc. Method to produce a multi-level semiconductor memory device and structure
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US12016181B2 (en) 2015-10-24 2024-06-18 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US12219769B2 (en) 2015-10-24 2025-02-04 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US12035531B2 (en) 2015-10-24 2024-07-09 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US9640715B2 (en) 2015-05-15 2017-05-02 X-Celeprint Limited Printable inorganic semiconductor structures
CN107851208B (zh) 2015-06-01 2021-09-10 伊利诺伊大学评议会 具有无线供电和近场通信能力的小型化电子系统
WO2016196673A1 (en) 2015-06-01 2016-12-08 The Board Of Trustees Of The University Of Illinois Alternative approach to uv sensing
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US10102794B2 (en) 2015-06-09 2018-10-16 X-Celeprint Limited Distributed charge-pump power-supply system
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US9640391B2 (en) * 2015-06-23 2017-05-02 The Trustees Of The Stevens Institute Of Technology Direct and pre-patterned synthesis of two-dimensional heterostructures
WO2017004576A1 (en) 2015-07-02 2017-01-05 The Board Of Trustees Of The University Of Illinois Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics
US9704821B2 (en) 2015-08-11 2017-07-11 X-Celeprint Limited Stamp with structured posts
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
US10468363B2 (en) 2015-08-10 2019-11-05 X-Celeprint Limited Chiplets with connection posts
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
US9899556B2 (en) 2015-09-14 2018-02-20 Wisconsin Alumni Research Foundation Hybrid tandem solar cells with improved tunnel junction structures
US12178055B2 (en) 2015-09-21 2024-12-24 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US12250830B2 (en) 2015-09-21 2025-03-11 Monolithic 3D Inc. 3D semiconductor memory devices and structures
DE112016004265T5 (de) 2015-09-21 2018-06-07 Monolithic 3D Inc. 3d halbleitervorrichtung und -struktur
US12100658B2 (en) 2015-09-21 2024-09-24 Monolithic 3D Inc. Method to produce a 3D multilayer semiconductor device and structure
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications
CN110357033B (zh) * 2015-10-22 2020-10-09 艾克斯展示公司技术有限公司 用于控制可转移半导体结构的释放的结构及方法
US12120880B1 (en) 2015-10-24 2024-10-15 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11991884B1 (en) 2015-10-24 2024-05-21 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
US10091446B2 (en) 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US9930277B2 (en) 2015-12-23 2018-03-27 X-Celeprint Limited Serial row-select matrix-addressed system
US9928771B2 (en) 2015-12-24 2018-03-27 X-Celeprint Limited Distributed pulse width modulation control
CN105609589B (zh) * 2016-01-29 2017-11-03 中国科学院半导体研究所 适用于转印的无机半导体薄膜功能单元的制备方法
US11230471B2 (en) 2016-02-05 2022-01-25 X-Celeprint Limited Micro-transfer-printed compound sensor device
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
TWI681508B (zh) 2016-02-25 2020-01-01 愛爾蘭商艾克斯瑟樂普林特有限公司 有效率地微轉印微型裝置於大尺寸基板上
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
TWI625785B (zh) * 2016-03-02 2018-06-01 Tokyo Electron Limited 具有可調節選擇性之等向性矽與矽化鍺蝕刻
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10917953B2 (en) 2016-03-21 2021-02-09 X Display Company Technology Limited Electrically parallel fused LEDs
WO2017173339A1 (en) 2016-04-01 2017-10-05 The Board Of Trustees Of The University Of Illinois Implantable medical devices for optogenetics
US10103069B2 (en) 2016-04-01 2018-10-16 X-Celeprint Limited Pressure-activated electrical interconnection by micro-transfer printing
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
US10360846B2 (en) 2016-05-10 2019-07-23 X-Celeprint Limited Distributed pulse-width modulation system with multi-bit digital storage and output device
US10622700B2 (en) 2016-05-18 2020-04-14 X-Celeprint Limited Antenna with micro-transfer-printed circuit element
DE102016109459B4 (de) 2016-05-23 2019-06-13 X-Fab Semiconductor Foundries Ag Optimierter Transfer Print (Überführungsdruck) zwischen Trägersubstraten als Verfahren, Trägersubstrat und mikro-technisches Bauelement
DE102016109950B3 (de) 2016-05-30 2017-09-28 X-Fab Semiconductor Foundries Ag Integrierte Schaltung mit einem - durch einen Überführungsdruck aufgebrachten - Bauelement und Verfahren zur Herstellung der integrierten Schaltung
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US10453826B2 (en) 2016-06-03 2019-10-22 X-Celeprint Limited Voltage-balanced serial iLED pixel and display
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US10653342B2 (en) 2016-06-17 2020-05-19 The Board Of Trustees Of The University Of Illinois Soft, wearable microfluidic systems capable of capture, storage, and sensing of biofluids
US9966301B2 (en) * 2016-06-27 2018-05-08 New Fab, LLC Reduced substrate effects in monolithically integrated RF circuits
DE102016117030B4 (de) 2016-07-17 2018-07-05 X-Fab Semiconductor Foundries Ag Herstellung von Halbleiterstrukturen auf einem Trägersubstrat, die durch Überführungsdruck (Transfer Print) übertragbar sind.
US10475876B2 (en) 2016-07-26 2019-11-12 X-Celeprint Limited Devices with a single metal layer
US10222698B2 (en) 2016-07-28 2019-03-05 X-Celeprint Limited Chiplets with wicking posts
US11064609B2 (en) 2016-08-04 2021-07-13 X Display Company Technology Limited Printable 3D electronic structure
US9997399B2 (en) * 2016-08-16 2018-06-12 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
US9722134B1 (en) * 2016-08-16 2017-08-01 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10157880B2 (en) 2016-10-03 2018-12-18 X-Celeprint Limited Micro-transfer printing with volatile adhesive layer
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US12225704B2 (en) 2016-10-10 2025-02-11 Monolithic 3D Inc. 3D memory devices and structures with memory arrays and metal layers
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
WO2018085371A1 (en) 2016-11-01 2018-05-11 Massachusetts Institute Of Technology Lift-off embedded micro and structures
US11027462B2 (en) 2016-11-09 2021-06-08 The Board Of Trustees Of Western Michigan University Polydimethylsiloxane films and method of manufacture
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
WO2018091459A1 (en) 2016-11-15 2018-05-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
WO2018092123A1 (en) 2016-11-17 2018-05-24 Orbotech Ltd. Hybrid, multi-material 3d printing
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
US10297502B2 (en) 2016-12-19 2019-05-21 X-Celeprint Limited Isolation structure for micro-transfer-printable devices
KR101925565B1 (ko) * 2016-12-30 2018-12-06 (재)한국나노기술원 갈라짐 패턴을 이용한 에피층 분리 방법
US10832609B2 (en) * 2017-01-10 2020-11-10 X Display Company Technology Limited Digital-drive pulse-width-modulated output system
US10332868B2 (en) 2017-01-26 2019-06-25 X-Celeprint Limited Stacked pixel structures
US10468391B2 (en) 2017-02-08 2019-11-05 X-Celeprint Limited Inorganic light-emitting-diode displays with multi-ILED pixels
TWI675402B (zh) * 2017-02-17 2019-10-21 美商美國亞德諾半導體公司 轉印方法及平行轉印方法
US10249739B2 (en) 2017-03-01 2019-04-02 International Business Machines Corporation Nanosheet MOSFET with partial release and source/drain epitaxy
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
KR101898858B1 (ko) * 2017-03-13 2018-10-29 주식회사 페타룩스 태양 전지
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
DE102017108136B4 (de) 2017-04-13 2019-03-14 X-Fab Semiconductor Foundries Ag Geometrisch geformte Bauelemente in einer Anordnung für einen Überführungsdruck (Transfer Print) und zugehörige Verfahren
US10468397B2 (en) 2017-05-05 2019-11-05 X-Celeprint Limited Matrix addressed tiles and arrays
KR102002839B1 (ko) * 2017-05-23 2019-07-23 한국기계연구원 희생층을 이용한 금속패턴 형성방법
US10777700B2 (en) * 2017-06-02 2020-09-15 Wisconsin Alumni Research Foundation Optoelectronic devices based on thin single-crystalline semiconductor films and non-epitaxial optical cavities
CN107188115B (zh) * 2017-06-06 2020-05-01 北京航空航天大学 一种金属/聚合物复合三维微纳米结构的制备方法
US10176991B1 (en) 2017-07-06 2019-01-08 Wisconsin Alumni Research Foundation High-quality, single-crystalline silicon-germanium films
US10804880B2 (en) 2018-12-03 2020-10-13 X-Celeprint Limited Device structures with acoustic wave transducers and connection posts
US10943946B2 (en) 2017-07-21 2021-03-09 X Display Company Technology Limited iLED displays with substrate holes
US10832935B2 (en) 2017-08-14 2020-11-10 X Display Company Technology Limited Multi-level micro-device tethers
DE102017125217A1 (de) * 2017-10-27 2019-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von zumindest einem optoelektronischen Bauelement und optoelektronisches Bauelement
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10836200B2 (en) 2017-11-13 2020-11-17 X Display Company Technology Limited Rigid micro-modules with ILED and light conductor
US20190186041A1 (en) 2017-12-20 2019-06-20 International Business Machines Corporation Three-dimensionally stretchable single crystalline semiconductor membrane
US10297585B1 (en) 2017-12-21 2019-05-21 X-Celeprint Limited Multi-resolution compound micro-devices
CN109971373B (zh) * 2017-12-28 2021-01-26 清华大学 一种粘结方法
CN111656535A (zh) * 2018-01-23 2020-09-11 莫西·埃那夫 2d材料制成的电压匹配的多结太阳能模块
US10692996B1 (en) 2018-02-05 2020-06-23 United States Of America As Represented By The Secretary Of The Air Force Systems, methods and apparatus for radio frequency devices
US11189605B2 (en) 2018-02-28 2021-11-30 X Display Company Technology Limited Displays with transparent bezels
JP6431631B1 (ja) * 2018-02-28 2018-11-28 株式会社フィルネックス 半導体素子の製造方法
TWI670755B (zh) * 2018-02-28 2019-09-01 日商菲爾尼克斯股份有限公司 半導體元件的製造方法
US10690920B2 (en) 2018-02-28 2020-06-23 X Display Company Technology Limited Displays with transparent bezels
US10910355B2 (en) 2018-04-30 2021-02-02 X Display Company Technology Limited Bezel-free displays
US10505079B2 (en) 2018-05-09 2019-12-10 X-Celeprint Limited Flexible devices and methods using laser lift-off
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
US10615574B2 (en) 2018-05-17 2020-04-07 Wisconsin Alumni Research Foundation Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers
CN112204754B (zh) * 2018-05-30 2024-08-13 加利福尼亚大学董事会 从半导体衬底移除半导体层的方法
US10832934B2 (en) 2018-06-14 2020-11-10 X Display Company Technology Limited Multi-layer tethers for micro-transfer printing
US10714001B2 (en) 2018-07-11 2020-07-14 X Display Company Technology Limited Micro-light-emitting-diode displays
US10796971B2 (en) 2018-08-13 2020-10-06 X Display Company Technology Limited Pressure-activated electrical interconnection with additive repair
US12236825B2 (en) 2018-08-13 2025-02-25 X Display Company Technology Limited Redundant pixel layouts
WO2020059023A1 (ja) 2018-09-18 2020-03-26 株式会社 東芝 光電変換素子とその製造方法
US10672891B2 (en) * 2018-10-04 2020-06-02 International Business Machines Corporation Stacked gate all around MOSFET with symmetric inner spacer formed via sacrificial pure Si anchors
US10796938B2 (en) * 2018-10-17 2020-10-06 X Display Company Technology Limited Micro-transfer printing with selective component removal
US10573544B1 (en) 2018-10-17 2020-02-25 X-Celeprint Limited Micro-transfer printing with selective component removal
US11923472B2 (en) 2018-11-05 2024-03-05 The United States Of America As Represented By The Secretary Of The Army Deformable array of semiconductor devices
US11482979B2 (en) 2018-12-03 2022-10-25 X Display Company Technology Limited Printing components over substrate post edges
US11274035B2 (en) 2019-04-24 2022-03-15 X-Celeprint Limited Overhanging device structures and related methods of manufacture
US11528808B2 (en) 2018-12-03 2022-12-13 X Display Company Technology Limited Printing components to substrate posts
US10790173B2 (en) 2018-12-03 2020-09-29 X Display Company Technology Limited Printed components on substrate posts
US12162747B2 (en) 2018-12-03 2024-12-10 X-Celeprint Limited Enclosed cavity structures
JP6836022B2 (ja) * 2018-12-10 2021-02-24 株式会社フィルネックス 半導体基板、半導体基板の製造方法及び半導体素子の製造方法
US11282786B2 (en) 2018-12-12 2022-03-22 X Display Company Technology Limited Laser-formed interconnects for redundant devices
WO2020131296A1 (en) * 2018-12-21 2020-06-25 Applied Materials, Inc. Processing system and method of forming a contact
US11483937B2 (en) 2018-12-28 2022-10-25 X Display Company Technology Limited Methods of making printed structures
US11322460B2 (en) 2019-01-22 2022-05-03 X-Celeprint Limited Secure integrated-circuit systems
US11251139B2 (en) 2019-01-22 2022-02-15 X-Celeprint Limited Secure integrated-circuit systems
US11088121B2 (en) 2019-02-13 2021-08-10 X Display Company Technology Limited Printed LED arrays with large-scale uniformity
US10748793B1 (en) 2019-02-13 2020-08-18 X Display Company Technology Limited Printing component arrays with different orientations
US11094870B2 (en) 2019-03-12 2021-08-17 X Display Company Technology Limited Surface-mountable pixel packages and pixel engines
US11164934B2 (en) 2019-03-12 2021-11-02 X Display Company Technology Limited Tiled displays with black-matrix support screens
DE102019108701B4 (de) * 2019-04-03 2026-02-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Bauteilen, Bauteil und Bauteilverbund aus Bauteilen
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US10714374B1 (en) 2019-05-09 2020-07-14 X Display Company Technology Limited High-precision printed structures
FR3096172A1 (fr) * 2019-05-13 2020-11-20 X-Fab France SAS Transfer Printing for RF Applications
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
US11488943B2 (en) 2019-06-14 2022-11-01 X Display Company Technology Limited Modules with integrated circuits and devices
US10944027B2 (en) 2019-06-14 2021-03-09 X Display Company Technology Limited Pixel modules with controllers and light emitters
KR102687815B1 (ko) 2019-06-20 2024-07-24 엘지전자 주식회사 디스플레이 장치 및 반도체 발광소자의 자가조립 방법
DE102019118270B4 (de) 2019-07-05 2021-10-07 X-Fab Semiconductor Foundries Gmbh Verfahren zur Herstellung von Halbleiterbauelementen zur Ausbeutesteigerung beim Mikrotransferdruck
CN110211880B (zh) * 2019-07-05 2023-04-28 苏州汉骅半导体有限公司 金刚石基氮化镓hemt结构制造方法
US11101417B2 (en) 2019-08-06 2021-08-24 X Display Company Technology Limited Structures and methods for electrically connecting printed components
CN110600470B (zh) * 2019-08-22 2021-10-22 深圳第三代半导体研究院 一种GaN基激光器和AlGaN/GaN HEMT集成器件制备方法
US20220328311A1 (en) * 2019-09-04 2022-10-13 Massachusetts Institute Of Technology Multi-regional epitaxial growth and related systems and articles
FI129855B (en) * 2019-10-08 2022-09-30 Jani Oksanen METHOD AND STRUCTURE FOR MANUFACTURING THIN FILMS
US11626856B2 (en) 2019-10-30 2023-04-11 X-Celeprint Limited Non-linear tethers for suspended devices
US11127889B2 (en) 2019-10-30 2021-09-21 X Display Company Technology Limited Displays with unpatterned layers of light-absorbing material
US11637540B2 (en) 2019-10-30 2023-04-25 X-Celeprint Limited Non-linear tethers for suspended devices
DE102020107288A1 (de) * 2019-12-10 2021-06-10 X-Fab Semiconductor Foundries Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
US11315909B2 (en) 2019-12-20 2022-04-26 X Display Company Technology Limited Displays with embedded light emitters
US12376414B2 (en) 2020-01-10 2025-07-29 Rockley Photonics Limited Source wafer and method of preparation thereof
US11037912B1 (en) 2020-01-31 2021-06-15 X Display Company Technology Limited LED color displays with multiple LEDs connected in series and parallel in different sub-pixels of a pixel
US12528308B2 (en) 2020-05-01 2026-01-20 X-Celeprint Limited Hybrid documents with electronic indicia
US12437174B2 (en) * 2020-05-01 2025-10-07 X-Celeprint Limited Hybrid documents with electronic indicia
CN111540709A (zh) * 2020-05-07 2020-08-14 电子科技大学 一种二维半导体器件电路一体化制备的方法
US11538849B2 (en) 2020-05-28 2022-12-27 X Display Company Technology Limited Multi-LED structures with reduced circuitry
WO2022013246A1 (en) * 2020-07-13 2022-01-20 Rockley Photonics Limited Method of preparing a device coupon for micro-transfer printing, device wafer including said device coupon, and optoelectronic device manufactured from said device wafer
TWM643626U (zh) * 2020-09-30 2023-07-11 日商信越化學工業股份有限公司 雷射誘導向前轉移系統、雷射誘導向前轉移裝置、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統
US11952266B2 (en) 2020-10-08 2024-04-09 X-Celeprint Limited Micro-device structures with etch holes
US12006205B2 (en) 2020-10-08 2024-06-11 X-Celeprint Limited Micro-device structures with etch holes
CN112234019B (zh) * 2020-10-20 2023-01-17 广东省科学院半导体研究所 转移膜、转移组件和微器件曲面转移方法
US10964899B1 (en) 2020-11-05 2021-03-30 King Abdulaziz University Hybrid junction solar light sensitive device
KR102774159B1 (ko) 2021-01-05 2025-02-28 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN117121161A (zh) * 2021-04-20 2023-11-24 京瓷株式会社 半导体基板和其制造方法以及制造装置、半导体器件和其制造方法以及制造装置、电子设备
US12074583B2 (en) 2021-05-11 2024-08-27 X Display Company Technology Limited Printing components to adhesive substrate posts
WO2023015382A1 (en) * 2021-08-09 2023-02-16 Vuereal Inc. Selective release of microdevices
US12310074B2 (en) * 2021-11-04 2025-05-20 Taiwan Semiconductor Manufacturing Co., Ltd. NanoStructure field-effect transistor device and methods of forming
US20240421001A1 (en) * 2021-11-08 2024-12-19 The Board Of Trustees Of The Leland Stanford Junior University Process for the Pulsed Laser Ejection of Multiple Epitaxial Structures from one Thin Film Growth
DE102023102601B4 (de) 2023-02-02 2024-10-17 X-FAB Global Services GmbH Halbleiterscheibe und (Mikro-)Transferdruckverfahren
CN118737811A (zh) * 2023-03-28 2024-10-01 冲电气工业株式会社 基板单元的制造方法和基板单元
WO2025036700A1 (en) 2023-08-16 2025-02-20 Ams-Osram International Gmbh Method for processing an optoelectronic device and array of optoelectronic devices
EP4723166A1 (en) 2024-10-07 2026-04-08 IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik Method of placing a feol component on a target substrate

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296953A (en) * 1984-01-23 1994-03-22 Canon Kabushiki Kaisha Driving method for ferro-electric liquid crystal optical modulation device
US4761335A (en) * 1985-03-07 1988-08-02 National Starch And Chemical Corporation Alpha-particle protection of semiconductor devices
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4784720A (en) 1985-05-03 1988-11-15 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4663628A (en) * 1985-05-06 1987-05-05 Halliburton Company Method of sampling environmental conditions with a self-contained downhole gauge system
US4663828A (en) * 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
US5107586A (en) * 1988-09-27 1992-04-28 General Electric Company Method for interconnecting a stack of integrated circuits at a very high density
JPH06118441A (ja) 1991-11-05 1994-04-28 Tadanobu Kato 表示セル
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5434751A (en) * 1994-04-11 1995-07-18 Martin Marietta Corporation Reworkable high density interconnect structure incorporating a release layer
US5599616A (en) * 1994-11-30 1997-02-04 Polaroid Corporation Laminar imaging medium utilizing cross-linked borated polymeric binder
JP4525603B2 (ja) * 1996-08-27 2010-08-18 セイコーエプソン株式会社 薄膜トランジスタの転写方法
US6316283B1 (en) * 1998-03-25 2001-11-13 Asulab Sa Batch manufacturing method for photovoltaic cells
US6057212A (en) * 1998-05-04 2000-05-02 International Business Machines Corporation Method for making bonded metal back-plane substrates
KR100434537B1 (ko) * 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
JP3657143B2 (ja) * 1999-04-27 2005-06-08 シャープ株式会社 太陽電池及びその製造方法
IL130326A0 (en) 1999-06-07 2000-06-01 Yeda Res & Dev A sensor based on molecular controlled semiconductor resistor
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
CN1427749A (zh) 2000-04-17 2003-07-02 宾夕法尼亚州研究基金会 淀积的薄膜以及它们在分离层和牺牲层应用中的使用
US6787052B1 (en) 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US6787750B1 (en) 2000-06-29 2004-09-07 Siemens Corporate Research, Inc. Method and apparatus for robust optical tracking with beacon markers
US6525352B1 (en) * 2000-11-22 2003-02-25 Network Photonics, Inc. Method to reduce release time of micromachined devices
US6750480B2 (en) * 2000-11-27 2004-06-15 Kopin Corporation Bipolar transistor with lattice matched base layer
JP4461616B2 (ja) * 2000-12-14 2010-05-12 ソニー株式会社 素子の転写方法、素子保持基板の形成方法、及び素子保持基板
US6569701B2 (en) * 2001-10-25 2003-05-27 Rockwell Automation Technologies, Inc. Method for fabricating an isolated microelectromechanical system device
AU2002257289A1 (en) 2001-05-17 2002-11-25 The Board Of Trustees Of The Leland Stanford Junior University Device and method for three-dimensional spatial localization and functional interconnection of different types of cells
AU2002322105A1 (en) * 2001-06-14 2003-01-02 Amberware Systems Corporation Method of selective removal of sige alloys
US6661037B2 (en) * 2001-07-20 2003-12-09 Microlink Devices, Inc. Low emitter resistance contacts to GaAs high speed HBT
AU2002322581A1 (en) * 2001-07-20 2003-03-03 Microlink Devices, Inc. Graded base gaassb for high speed gaas hbt
US6917061B2 (en) * 2001-07-20 2005-07-12 Microlink Devices, Inc. AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
JP2003077940A (ja) 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US6936181B2 (en) * 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
ITMO20010248A1 (it) * 2001-12-12 2003-06-12 Expert System Solutions Srl Dilatometro ottico perfezionato
JP4211256B2 (ja) 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
EP1340622B1 (en) * 2002-03-01 2006-12-13 Dai Nippon Printing Co., Ltd. Thermally transferable image protective sheet, method for protective layer formation, and record produced by said method
JP3889700B2 (ja) * 2002-03-13 2007-03-07 三井金属鉱業株式会社 Ｃｏｆフィルムキャリアテープの製造方法
JP2003297974A (ja) 2002-03-29 2003-10-17 Seiko Epson Corp 半導体装置、電気光学装置および半導体装置の製造方法
US6531331B1 (en) * 2002-07-16 2003-03-11 Sandia Corporation Monolithic integration of a MOSFET with a MEMS device
US6746890B2 (en) * 2002-07-17 2004-06-08 Tini Alloy Company Three dimensional thin film devices and methods of fabrication
US6747338B1 (en) * 2002-11-27 2004-06-08 Analog Devices, Inc. Composite dielectric with improved etch selectivity for high voltage MEMS structures
US7494896B2 (en) * 2003-06-12 2009-02-24 International Business Machines Corporation Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
US7033961B1 (en) * 2003-07-15 2006-04-25 Rf Micro Devices, Inc. Epitaxy/substrate release layer
US20050082526A1 (en) * 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
DE10349963A1 (de) * 2003-10-24 2005-06-02 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung einer Folie
EP1700161B1 (en) * 2003-12-01 2018-01-24 The Board of Trustees of the University of Illinois Methods and devices for fabricating three-dimensional nanoscale structures
US7018549B2 (en) 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US8159048B2 (en) 2004-01-30 2012-04-17 Triquint Semiconductor, Inc. Bipolar junction transistor geometry
JP5030388B2 (ja) 2004-03-22 2012-09-19 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
KR101219748B1 (ko) * 2004-03-22 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로 제작방법
US7202141B2 (en) * 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
US20080055581A1 (en) * 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
US7195733B2 (en) * 2004-04-27 2007-03-27 The Board Of Trustees Of The University Of Illinois Composite patterning devices for soft lithography
US7943491B2 (en) * 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
CN102683391B (zh) * 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
JP4771510B2 (ja) 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
JP4912627B2 (ja) * 2004-06-24 2012-04-11 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
US7425523B2 (en) * 2004-07-05 2008-09-16 Dai Nippon Printing Co., Ltd. Thermal transfer recording material and thermal transfer recording method
US7687886B2 (en) * 2004-08-19 2010-03-30 Microlink Devices, Inc. High on-state breakdown heterojunction bipolar transistor
DE102005036820A1 (de) * 2004-08-31 2006-03-09 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper für einen vertikal emittierenden Laser und Verfahren zu dessen Herstellung
US7259106B2 (en) 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
US7621044B2 (en) * 2004-10-22 2009-11-24 Formfactor, Inc. Method of manufacturing a resilient contact
KR100667508B1 (ko) * 2004-11-08 2007-01-10 엘지전자 주식회사 발광 소자 및 그의 제조방법
US7306963B2 (en) 2004-11-30 2007-12-11 Spire Corporation Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices
US20060180198A1 (en) * 2005-02-16 2006-08-17 Sharp Kabushiki Kaisha Solar cell, solar cell string and method of manufacturing solar cell string
JP5052033B2 (ja) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2006130721A2 (en) 2005-06-02 2006-12-07 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
TWI420237B (zh) 2005-06-02 2013-12-21 美國伊利諾大學理事會 藉由對彈性印模之黏著性動力控制之圖案轉印印刷
US7462891B2 (en) 2005-09-27 2008-12-09 Coldwatt, Inc. Semiconductor device having an interconnect with sloped walls and method of forming the same
US7687707B2 (en) * 2005-11-16 2010-03-30 Emcore Solar Power, Inc. Via structures in solar cells with bypass diode
JP5271541B2 (ja) * 2006-01-16 2013-08-21 パナソニック株式会社 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法
EP1991723A2 (en) 2006-03-03 2008-11-19 The Board Of Trustees Of The University Of Illinois Methods of making spatially aligned nanotubes and nanotube arrays
WO2008030666A2 (en) 2006-07-25 2008-03-13 The Board Of Trustees Of The University Of Illinois Multispectral plasmonic crystal sensors
DE102006037433B4 (de) * 2006-08-09 2010-08-19 Ovd Kinegram Ag Verfahren zur Herstellung eines Mehrschichtkörpers sowie Mehrschichtkörper
EP2064710A4 (en) 2006-09-06 2011-05-04 Univ Illinois CONTROLLED BUCKET STRUCTURES IN SEMICONDUCTOR CONNECTIONS AND NANOMEMBRANES FOR EXPANDABLE ELECTRONIC ARTICLES
KR101430587B1 (ko) 2006-09-20 2014-08-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US20110108081A1 (en) * 2006-12-20 2011-05-12 Jds Uniphase Corporation Photovoltaic Power Converter
WO2008079677A2 (en) 2006-12-20 2008-07-03 Arkema Inc. Polymer encapsulation and/or binding
KR101519038B1 (ko) 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
WO2009011709A1 (en) 2007-07-19 2009-01-22 The Board Of Trustees Of The University Of Illinois High resolution electrohydrodynamic jet printing for manufacturing systems
CN103872002B (zh) * 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
US8470701B2 (en) * 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
WO2010005707A1 (en) 2008-06-16 2010-01-14 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
WO2010036807A1 (en) 2008-09-24 2010-04-01 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
WO2010077616A2 (en) 2008-12-08 2010-07-08 Alta Devices, Inc. Multiple stack deposition for epitaxial lift off
KR101046064B1 (ko) 2008-12-11 2011-07-01 삼성전기주식회사 박막소자 제조방법
TWI592996B (zh) 2009-05-12 2017-07-21 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US8666471B2 (en) 2010-03-17 2014-03-04 The Board Of Trustees Of The University Of Illinois Implantable biomedical devices on bioresorbable substrates
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US9057994B2 (en) 2010-01-08 2015-06-16 The Board Of Trustees Of The University Of Illinois High resolution printing of charge
US8562095B2 (en) 2010-11-01 2013-10-22 The Board Of Trustees Of The University Of Illinois High resolution sensing and control of electrohydrodynamic jet printing
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
WO2013010113A1 (en) 2011-07-14 2013-01-17 The Board Of Trustees Of The University Of Illinois Non-contact transfer printing
CN108389893A (zh) 2011-12-01 2018-08-10 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
EP2830492B1 (en) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
US10497633B2 (en) 2013-02-06 2019-12-03 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with fluid containment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022091670A1 (ja) 2020-10-30 2022-05-05 信越化学工業株式会社 発光ダイオード供給基板の製造方法、発光ダイオードディスプレイの製造方法、発光ダイオードディスプレイの分割ユニットの製造方法、及び素子供給基板の製造方法
KR20250100771A (ko) 2020-10-30 2025-07-03 신에쓰 가가꾸 고교 가부시끼가이샤 발광다이오드 공급기판의 제조방법, 발광다이오드 디스플레이의 제조방법, 발광다이오드 디스플레이의 분할유닛의 제조방법, 및 소자 공급기판의 제조방법

Also Published As

Publication number Publication date
CN101517700A (zh) 2009-08-26
US8895406B2 (en) 2014-11-25
KR101588019B1 (ko) 2016-02-12
US7932123B2 (en) 2011-04-26
TW200832513A (en) 2008-08-01
KR20140141662A (ko) 2014-12-10
JP5805712B2 (ja) 2015-11-04
US20080108171A1 (en) 2008-05-08
CN101517700B (zh) 2014-04-16
KR101430587B1 (ko) 2014-08-14
JP6238141B2 (ja) 2017-11-29
EP2064734A4 (en) 2014-03-26
JP2013247372A (ja) 2013-12-09
TWI438827B (zh) 2014-05-21
JP2010504649A (ja) 2010-02-12
KR20090078803A (ko) 2009-07-20
US9349900B2 (en) 2016-05-24
CN103956336A (zh) 2014-07-30
KR101615255B1 (ko) 2016-05-11
US20110171813A1 (en) 2011-07-14
WO2008036837A2 (en) 2008-03-27
KR20140016432A (ko) 2014-02-07
US20140361409A1 (en) 2014-12-11
EP2064734B1 (en) 2019-01-16
JP2016040828A (ja) 2016-03-24
CN103956336B (zh) 2019-08-16
MY149190A (en) 2013-07-31
WO2008036837A3 (en) 2009-05-14
EP2064734A2 (en) 2009-06-03
US20110316120A1 (en) 2011-12-29

Similar Documents

Publication Publication Date Title
JP6238141B2 (ja) 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
TWI533459B (zh) 可印刷半導體結構及製造和組合之相關方法
US7799699B2 (en) Printable semiconductor structures and related methods of making and assembling
KR101269566B1 (ko) 프린터블 반도체 구조들 및 관련 제조 및 조립 방법
EP1915774A2 (en) Printable semiconductor structures and related methods of making and assembling
Rogers et al. Release strategies for making transferable semiconductor structures, devices and device components
KR101347687B1 (ko) 프린터블 반도체 구조들 및 관련 제조 및 조립 방법
Baca Fabrication techniques for unusual electronic systems: Silicon microstructures for photovoltaic modules

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100831

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130115

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130408

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130415

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130508

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130611

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130711

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5319533

Country of ref document: JP

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250