CN101517700B - 用于制造可转移半导体结构、器件和器件构件的松脱策略 - Google Patents

用于制造可转移半导体结构、器件和器件构件的松脱策略 Download PDF

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CN101517700B
CN101517700B CN200780034881.7A CN200780034881A CN101517700B CN 101517700 B CN101517700 B CN 101517700B CN 200780034881 A CN200780034881 A CN 200780034881A CN 101517700 B CN101517700 B CN 101517700B
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layer
substrate
layers
multilayer structure
functional
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CN101517700A (zh
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J·A·罗杰斯
R·G·诺奥
M·梅尔特
高興助
J·尹
E·梅纳德
A·J·巴卡
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University of Illinois System
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    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
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    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
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    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
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CN200780034881.7A 2006-09-20 2007-09-20 用于制造可转移半导体结构、器件和器件构件的松脱策略 Active CN101517700B (zh)

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US82635406P 2006-09-20 2006-09-20
US60/826,354 2006-09-20
US94465307P 2007-06-18 2007-06-18
US60/944,653 2007-06-18
PCT/US2007/079070 WO2008036837A2 (en) 2006-09-20 2007-09-20 Release strategies for making transferable semiconductor structures, devices and device components

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US (4) US7932123B2 (https=)
EP (1) EP2064734B1 (https=)
JP (3) JP5319533B2 (https=)
KR (3) KR101430587B1 (https=)
CN (2) CN101517700B (https=)
MY (1) MY149190A (https=)
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US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
CN102683391B (zh) 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
JP5271541B2 (ja) * 2006-01-16 2013-08-21 パナソニック株式会社 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
KR101430587B1 (ko) 2006-09-20 2014-08-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US8005402B2 (en) * 2007-01-10 2011-08-23 Kabushiki Kaisha Toshiba Charging device, image forming apparatus and charging method
KR101519038B1 (ko) 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
US8097922B1 (en) * 2007-05-29 2012-01-17 The Regents Of The University Of California Nanometer-scale transistor architecture providing enhanced carrier mobility
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ES2530458T3 (es) * 2008-05-12 2015-03-03 Univ Villanova Células solares y método de fabricación de células solares
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US8895406B2 (en) 2014-11-25
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US7932123B2 (en) 2011-04-26
TW200832513A (en) 2008-08-01
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US20080108171A1 (en) 2008-05-08
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EP2064734A4 (en) 2014-03-26
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US9349900B2 (en) 2016-05-24
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