JP5318459B2 - Cmosイメージセンサの単位画素及びcmosイメージセンサの製造方法 - Google Patents
Cmosイメージセンサの単位画素及びcmosイメージセンサの製造方法 Download PDFInfo
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- JP5318459B2 JP5318459B2 JP2008126944A JP2008126944A JP5318459B2 JP 5318459 B2 JP5318459 B2 JP 5318459B2 JP 2008126944 A JP2008126944 A JP 2008126944A JP 2008126944 A JP2008126944 A JP 2008126944A JP 5318459 B2 JP5318459 B2 JP 5318459B2
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- image sensor
- cmos image
- gate
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- 238000000034 method Methods 0.000 title description 22
- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000010410 layer Substances 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 23
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Rx リセットゲート
MD ドライブゲート
Sx セレクトゲート
BPD 埋設フォトダイオード
321a TEOS酸化膜パターン
321b TEOS酸化膜スペーサ
324a N+フローティング接合部
324b N+ドレイン接合部
324c ソース/ドレインN+不純物拡散領域
325 シリサイド膜
Claims (5)
- CMOSイメージセンサの単位画素において、
第1導電型の半導体層と、
該半導体層内に形成され、外部からの光を感知して、光電荷を生成する光感知領域を有する埋設フォトダイオードと、
前記半導体層の表層部に形成され、前記埋設フォトダイオードから伝送された光電荷を蓄積する第2導電型のフローティング接合部と、
該フローティング接合部と前記埋設フォトダイオード間の前記半導体層上に形成されたトランスファゲートと、
前記半導体層の表層部に形成された第2導電型のドレイン接合部と、
前記フローティング接合部と前記ドレイン接合部間の前記半導体層上に形成されたリセットゲートと、
前記埋設フォトダイオード、前記トランスファゲート、前記フローティング接合部、前記リセットゲート及び素子分離膜が形成された領域を除く前記半導体層内に形成された第1導電型のウェル領域と、
該ウェル領域に形成されたソース/ドレイン接合部を備えるドライブトランジスタ及びセレクトトランジスタと、
前記埋設フォトダイオードを除く、前記フローティング接合部、前記トランスファゲート、前記ドレイン接合部、前記リセットゲート、及び前記ソース/ドレイン接合部上に形成されたシリサイド膜と、
絶縁層をパターニングすることにより形成された複数の絶縁層パターンであって、前記トランスファゲート、前記リセットゲート、前記ドライブトランジスタのゲート及び前記セレクトトランジスタのゲートの側壁に形成された絶縁性のスペーサと、前記シリサイド膜が前記埋設フォトダイオードを覆うように形成されることを防ぐために、前記光感知領域上と前記トランスファゲートの側壁上とに形成された保護層とを含むものである、複数の絶縁層パターンと
を備えていることを特徴とするCMOSイメージセンサの単位画素。 - 前記フローティング接合部及び前記ドレイン接合部が、高濃度の不純物拡散領域で構成されていることを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。
- 前記ソース/ドレイン接合部が、低濃度の不純物拡散領域と高濃度の不純物拡散領域とで構成されていることを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。
- 前記ドライブトランジスタ及び前記セレクトトランジスタのチャネルの幅が、0.5μm以下であることを特徴とする請求項1〜3のいずれかの項に記載のCMOSイメージセンサの単位画素。
- 前記保護層及び前記絶縁性のスペーサが、TEOS酸化膜で形成されていることを特徴とする請求項1に記載のCMOSイメージセンサの単位画素。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980024648A KR100291179B1 (ko) | 1998-06-29 | 1998-06-29 | 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법 |
KR1998-24648 | 1998-06-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18415799A Division JP4164611B2 (ja) | 1998-06-29 | 1999-06-29 | 自己整合的に形成されたシリサイド膜を備えたcmosイメージセンサの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008252111A JP2008252111A (ja) | 2008-10-16 |
JP5318459B2 true JP5318459B2 (ja) | 2013-10-16 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18415799A Expired - Lifetime JP4164611B2 (ja) | 1998-06-29 | 1999-06-29 | 自己整合的に形成されたシリサイド膜を備えたcmosイメージセンサの製造方法 |
JP2008126944A Expired - Lifetime JP5318459B2 (ja) | 1998-06-29 | 2008-05-14 | Cmosイメージセンサの単位画素及びcmosイメージセンサの製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP18415799A Expired - Lifetime JP4164611B2 (ja) | 1998-06-29 | 1999-06-29 | 自己整合的に形成されたシリサイド膜を備えたcmosイメージセンサの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6040593A (ja) |
JP (2) | JP4164611B2 (ja) |
KR (1) | KR100291179B1 (ja) |
DE (1) | DE19929733B4 (ja) |
TW (1) | TW416155B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10124417B2 (en) | 2013-12-19 | 2018-11-13 | Milwaukee Electric Tool Corporation | Adjustable diameter hole cutter |
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US10124417B2 (en) | 2013-12-19 | 2018-11-13 | Milwaukee Electric Tool Corporation | Adjustable diameter hole cutter |
US10576553B2 (en) | 2013-12-19 | 2020-03-03 | Milwaukee Electric Tool Corporation | Adjustable diameter hole cutter |
Also Published As
Publication number | Publication date |
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DE19929733A1 (de) | 2000-01-05 |
JP2000031449A (ja) | 2000-01-28 |
KR20000003406A (ko) | 2000-01-15 |
DE19929733B4 (de) | 2013-07-25 |
TW416155B (en) | 2000-12-21 |
US6040593A (en) | 2000-03-21 |
KR100291179B1 (ko) | 2001-07-12 |
JP4164611B2 (ja) | 2008-10-15 |
JP2008252111A (ja) | 2008-10-16 |
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