JP5282419B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5282419B2
JP5282419B2 JP2008060164A JP2008060164A JP5282419B2 JP 5282419 B2 JP5282419 B2 JP 5282419B2 JP 2008060164 A JP2008060164 A JP 2008060164A JP 2008060164 A JP2008060164 A JP 2008060164A JP 5282419 B2 JP5282419 B2 JP 5282419B2
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JP
Japan
Prior art keywords
gate electrode
insulating film
film
offset spacer
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2008060164A
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English (en)
Japanese (ja)
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JP2008288560A (ja
JP2008288560A5 (enExample
Inventor
善明 菊池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2008060164A priority Critical patent/JP5282419B2/ja
Priority to TW097112894A priority patent/TWI446522B/zh
Priority to US12/101,568 priority patent/US8350335B2/en
Priority to KR1020080035540A priority patent/KR101457006B1/ko
Priority to CN2008102103134A priority patent/CN101335300B/zh
Publication of JP2008288560A publication Critical patent/JP2008288560A/ja
Publication of JP2008288560A5 publication Critical patent/JP2008288560A5/ja
Priority to US12/817,949 priority patent/US20100255650A1/en
Application granted granted Critical
Publication of JP5282419B2 publication Critical patent/JP5282419B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008060164A 2007-04-18 2008-03-10 半導体装置及びその製造方法 Expired - Fee Related JP5282419B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008060164A JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法
TW097112894A TWI446522B (zh) 2007-04-18 2008-04-09 半導體裝置及其製造方法
US12/101,568 US8350335B2 (en) 2007-04-18 2008-04-11 Semiconductor device including off-set spacers formed as a portion of the sidewall
KR1020080035540A KR101457006B1 (ko) 2007-04-18 2008-04-17 반도체 디바이스 및 그 제조 방법
CN2008102103134A CN101335300B (zh) 2007-04-18 2008-04-18 半导体装置及其制造方法
US12/817,949 US20100255650A1 (en) 2007-04-18 2010-06-17 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007108953 2007-04-18
JP2007108953 2007-04-18
JP2008060164A JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008288560A JP2008288560A (ja) 2008-11-27
JP2008288560A5 JP2008288560A5 (enExample) 2010-04-15
JP5282419B2 true JP5282419B2 (ja) 2013-09-04

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Family Applications (1)

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JP2008060164A Expired - Fee Related JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法

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JP (1) JP5282419B2 (enExample)
KR (1) KR101457006B1 (enExample)
CN (1) CN101335300B (enExample)
TW (1) TWI446522B (enExample)

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Also Published As

Publication number Publication date
TW200849557A (en) 2008-12-16
JP2008288560A (ja) 2008-11-27
CN101335300B (zh) 2010-07-21
KR101457006B1 (ko) 2014-10-31
TWI446522B (zh) 2014-07-21
CN101335300A (zh) 2008-12-31
KR20080093911A (ko) 2008-10-22

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