KR101457006B1 - 반도체 디바이스 및 그 제조 방법 - Google Patents

반도체 디바이스 및 그 제조 방법 Download PDF

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Publication number
KR101457006B1
KR101457006B1 KR1020080035540A KR20080035540A KR101457006B1 KR 101457006 B1 KR101457006 B1 KR 101457006B1 KR 1020080035540 A KR1020080035540 A KR 1020080035540A KR 20080035540 A KR20080035540 A KR 20080035540A KR 101457006 B1 KR101457006 B1 KR 101457006B1
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South Korea
Prior art keywords
gate electrode
insulating film
film
silicon nitride
dummy gate
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Expired - Fee Related
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KR1020080035540A
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English (en)
Korean (ko)
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KR20080093911A (ko
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요시아키 기쿠치
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020080035540A 2007-04-18 2008-04-17 반도체 디바이스 및 그 제조 방법 Expired - Fee Related KR101457006B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00108953 2007-04-18
JP2007108953 2007-04-18
JPJP-P-2008-00060164 2008-03-10
JP2008060164A JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20080093911A KR20080093911A (ko) 2008-10-22
KR101457006B1 true KR101457006B1 (ko) 2014-10-31

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KR1020080035540A Expired - Fee Related KR101457006B1 (ko) 2007-04-18 2008-04-17 반도체 디바이스 및 그 제조 방법

Country Status (4)

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JP (1) JP5282419B2 (enExample)
KR (1) KR101457006B1 (enExample)
CN (1) CN101335300B (enExample)
TW (1) TWI446522B (enExample)

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Also Published As

Publication number Publication date
JP2008288560A (ja) 2008-11-27
JP5282419B2 (ja) 2013-09-04
CN101335300B (zh) 2010-07-21
CN101335300A (zh) 2008-12-31
KR20080093911A (ko) 2008-10-22
TWI446522B (zh) 2014-07-21
TW200849557A (en) 2008-12-16

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