TWI446522B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI446522B
TWI446522B TW097112894A TW97112894A TWI446522B TW I446522 B TWI446522 B TW I446522B TW 097112894 A TW097112894 A TW 097112894A TW 97112894 A TW97112894 A TW 97112894A TW I446522 B TWI446522 B TW I446522B
Authority
TW
Taiwan
Prior art keywords
gate electrode
insulating film
film
semiconductor device
tantalum nitride
Prior art date
Application number
TW097112894A
Other languages
English (en)
Chinese (zh)
Other versions
TW200849557A (en
Inventor
Yoshiaki Kikuchi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200849557A publication Critical patent/TW200849557A/zh
Application granted granted Critical
Publication of TWI446522B publication Critical patent/TWI446522B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097112894A 2007-04-18 2008-04-09 半導體裝置及其製造方法 TWI446522B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007108953 2007-04-18
JP2008060164A JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200849557A TW200849557A (en) 2008-12-16
TWI446522B true TWI446522B (zh) 2014-07-21

Family

ID=40147954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097112894A TWI446522B (zh) 2007-04-18 2008-04-09 半導體裝置及其製造方法

Country Status (4)

Country Link
JP (1) JP5282419B2 (enExample)
KR (1) KR101457006B1 (enExample)
CN (1) CN101335300B (enExample)
TW (1) TWI446522B (enExample)

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Also Published As

Publication number Publication date
TW200849557A (en) 2008-12-16
JP2008288560A (ja) 2008-11-27
CN101335300B (zh) 2010-07-21
KR101457006B1 (ko) 2014-10-31
CN101335300A (zh) 2008-12-31
KR20080093911A (ko) 2008-10-22
JP5282419B2 (ja) 2013-09-04

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