JP5232798B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
- Publication number
- JP5232798B2 JP5232798B2 JP2009541175A JP2009541175A JP5232798B2 JP 5232798 B2 JP5232798 B2 JP 5232798B2 JP 2009541175 A JP2009541175 A JP 2009541175A JP 2009541175 A JP2009541175 A JP 2009541175A JP 5232798 B2 JP5232798 B2 JP 5232798B2
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- substrate
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- particles
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- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 119
- 238000003672 processing method Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000010419 fine particle Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 238000005507 spraying Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0212—Resin particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Weting (AREA)
- Led Devices (AREA)
Description
11 微粒子(マスク)
12 凹凸構造
12a、12b 凹部
13、13A、13B、13C、13D 凸部
Claims (4)
- 圧送管の内壁との摩擦によって帯電した有機物材料で構成された粒子を前記圧送管によって基板の表面に散布することで、帯電による反発を通じて粒子間が前記基板上で一定間隔を保つように、前記粒子を前記基板上に付着させ、
前記粒子をマスクとして前記基板の表面をエッチングして前記基板の表面に凹凸構造を形成すると同時に、前記マスクを前記エッチングによって除去する
基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記粒子の粒径は、0.01μm以上10μm以下である
基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記基板は、前記表面に発光層が形成される発光ダイオード用のサファイア基板である
基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記基板は、前記表面に光電変換層が形成される太陽電池用のシリコン基板である
基板処理方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009541175A JP5232798B2 (ja) | 2007-11-16 | 2008-11-13 | 基板処理方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007297810 | 2007-11-16 | ||
JP2007297810 | 2007-11-16 | ||
JP2009541175A JP5232798B2 (ja) | 2007-11-16 | 2008-11-13 | 基板処理方法 |
PCT/JP2008/070713 WO2009063954A1 (ja) | 2007-11-16 | 2008-11-13 | 基板処理方法及びこの方法によって処理された基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009063954A1 JPWO2009063954A1 (ja) | 2011-03-31 |
JP5232798B2 true JP5232798B2 (ja) | 2013-07-10 |
Family
ID=40638801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009541175A Expired - Fee Related JP5232798B2 (ja) | 2007-11-16 | 2008-11-13 | 基板処理方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100310828A1 (ja) |
EP (1) | EP2211374A4 (ja) |
JP (1) | JP5232798B2 (ja) |
KR (1) | KR101159438B1 (ja) |
CN (1) | CN101861640B (ja) |
RU (1) | RU2459312C2 (ja) |
TW (1) | TWI423325B (ja) |
WO (1) | WO2009063954A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1839317B (zh) * | 2003-05-19 | 2012-05-30 | 东丽株式会社 | 选择结合性物质固定化载体 |
WO2011027679A1 (ja) * | 2009-09-07 | 2011-03-10 | エルシード株式会社 | 半導体発光素子 |
JP2011091374A (ja) * | 2009-09-11 | 2011-05-06 | Samco Inc | サファイア基板のエッチング方法 |
JP2011091261A (ja) * | 2009-10-23 | 2011-05-06 | Ulvac Japan Ltd | 基板処理装置、基板処理方法及びこの方法によって処理された基板 |
KR20110054841A (ko) | 2009-11-18 | 2011-05-25 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN102263174B (zh) * | 2010-05-24 | 2015-04-29 | 广镓光电股份有限公司 | 半导体发光元件 |
JP5519422B2 (ja) * | 2010-06-17 | 2014-06-11 | 帝人デュポンフィルム株式会社 | テクスチャーフィルムの製造方法 |
CN102130285B (zh) * | 2010-11-03 | 2012-12-26 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
WO2012086522A1 (ja) * | 2010-12-21 | 2012-06-28 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
KR101293205B1 (ko) * | 2011-02-15 | 2013-08-05 | 한국기계연구원 | 나노 딤플 패턴의 형성방법 및 나노 구조물 |
KR102051976B1 (ko) * | 2011-12-28 | 2020-01-08 | 오지 홀딩스 가부시키가이샤 | 유기발광다이오드, 유기발광다이오드의 제조방법, 화상표시장치 및 조명장치 |
JP2013168505A (ja) * | 2012-02-15 | 2013-08-29 | Ulvac Japan Ltd | テクスチャー構造形成方法 |
CN102544289B (zh) * | 2012-03-06 | 2013-12-18 | 中国科学院半导体研究所 | 将氮化镓基发光二极管的外延结构表面粗化的方法 |
JP5868503B2 (ja) * | 2012-06-13 | 2016-02-24 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
EP2922103B1 (en) | 2012-08-21 | 2017-04-05 | Oji Holdings Corporation | Substrate for semiconductor light emitting elements and semiconductor light emitting element |
CN103681302B (zh) * | 2012-09-25 | 2016-07-27 | 南亚科技股份有限公司 | 选择性蚀刻方法 |
JP6256220B2 (ja) * | 2013-06-17 | 2018-01-10 | 王子ホールディングス株式会社 | 半導体発光素子用基板、半導体発光素子、半導体発光素子用基板の製造方法、および、半導体発光素子の製造方法 |
CN103730525B (zh) * | 2014-01-21 | 2016-03-30 | 南通大学 | 一种同心圆型波纹式太阳能电池硅基片及其制造工艺 |
CN103746018B (zh) * | 2014-01-21 | 2016-04-13 | 南通大学 | 一种瓦片状型波纹式太阳能电池硅基片及其制造工艺 |
JP2016201445A (ja) * | 2015-04-09 | 2016-12-01 | 王子ホールディングス株式会社 | 凹凸基板の製造方法。 |
CN108886075B (zh) * | 2015-07-29 | 2021-07-13 | 日机装株式会社 | 发光元件的制造方法 |
CN107204288A (zh) * | 2017-05-26 | 2017-09-26 | 武汉纺织大学 | 一种三维微结构的刻蚀方法及其应用 |
JP7072801B2 (ja) * | 2018-05-15 | 2022-05-23 | 王子ホールディングス株式会社 | 光電変換素子用構造体及び光電変換素子 |
RU2707663C1 (ru) * | 2019-01-18 | 2019-11-28 | Федеральное государственное бюджетное учреждение науки Институт Ядерной Физики им. Г.И. Будкера Сибирского отделения (ИЯФ СО РАН) | Способ изготовления брэгговской структуры с гофрировкой поверхности |
CN111250863B (zh) * | 2020-03-31 | 2021-06-29 | 格物感知(深圳)科技有限公司 | 一种特殊无铝焊接键合工艺 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000261008A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | 太陽電池用シリコン基板の粗面化方法 |
WO2006088228A1 (ja) * | 2005-02-18 | 2006-08-24 | Sumitomo Chemical Company, Limited | 半導体発光素子及びその製造方法 |
JP2007012971A (ja) * | 2005-07-01 | 2007-01-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
WO2007105782A1 (ja) * | 2006-03-13 | 2007-09-20 | Sumitomo Chemical Company, Limited | 3-5族窒化物半導体基板の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4407695A (en) * | 1981-12-31 | 1983-10-04 | Exxon Research And Engineering Co. | Natural lithographic fabrication of microstructures over large areas |
SU1481267A1 (ru) * | 1987-06-01 | 1989-05-23 | Республиканский инженерно-технический центр порошковой металлургии | Способ травлени материалов |
EP0700065B1 (en) * | 1994-08-31 | 2001-09-19 | AT&T Corp. | Field emission device and method for making same |
US5817373A (en) * | 1996-12-12 | 1998-10-06 | Micron Display Technology, Inc. | Dry dispense of particles for microstructure fabrication |
US6350388B1 (en) * | 1999-08-19 | 2002-02-26 | Micron Technology, Inc. | Method for patterning high density field emitter tips |
JP3969698B2 (ja) * | 2001-05-21 | 2007-09-05 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP2006210394A (ja) | 2005-01-25 | 2006-08-10 | Canon Inc | シリコン基体表面の凹凸形成方法 |
-
2008
- 2008-11-13 EP EP08850923A patent/EP2211374A4/en not_active Withdrawn
- 2008-11-13 CN CN2008801161982A patent/CN101861640B/zh active Active
- 2008-11-13 RU RU2010124378/28A patent/RU2459312C2/ru active
- 2008-11-13 KR KR1020107011380A patent/KR101159438B1/ko active IP Right Grant
- 2008-11-13 US US12/743,054 patent/US20100310828A1/en not_active Abandoned
- 2008-11-13 WO PCT/JP2008/070713 patent/WO2009063954A1/ja active Application Filing
- 2008-11-13 JP JP2009541175A patent/JP5232798B2/ja not_active Expired - Fee Related
- 2008-11-14 TW TW097144017A patent/TWI423325B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000261008A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | 太陽電池用シリコン基板の粗面化方法 |
WO2006088228A1 (ja) * | 2005-02-18 | 2006-08-24 | Sumitomo Chemical Company, Limited | 半導体発光素子及びその製造方法 |
JP2007012971A (ja) * | 2005-07-01 | 2007-01-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
WO2007105782A1 (ja) * | 2006-03-13 | 2007-09-20 | Sumitomo Chemical Company, Limited | 3-5族窒化物半導体基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20100074300A (ko) | 2010-07-01 |
KR101159438B1 (ko) | 2012-06-22 |
RU2010124378A (ru) | 2011-12-27 |
RU2459312C2 (ru) | 2012-08-20 |
WO2009063954A1 (ja) | 2009-05-22 |
TW200943409A (en) | 2009-10-16 |
TWI423325B (zh) | 2014-01-11 |
EP2211374A1 (en) | 2010-07-28 |
CN101861640A (zh) | 2010-10-13 |
US20100310828A1 (en) | 2010-12-09 |
EP2211374A4 (en) | 2012-10-10 |
CN101861640B (zh) | 2013-07-03 |
JPWO2009063954A1 (ja) | 2011-03-31 |
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