JP6617300B2 - 半導体基板をランダムにテクスチャリングするための方法 - Google Patents
半導体基板をランダムにテクスチャリングするための方法 Download PDFInfo
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Description
反応ガスの組成のうちの少なくとも1つが包含される。
段階P1を開始するために、組成C1の反応ガス57、例えばテトラフルオロメタンCF 4 などのフッ素化ガスがリアクター50に注入される。電極51、52の間に存在する振動電場は、ガス分子から電子を引き抜くことによってガス分子をイオン化し、陽イオン(カチオン)および自由電子を含むイオン化ガス(プラズマ)を生じさせる。自由電子がガス体から放出されるのに対し、より重く、且つ電場の変動に対して反応性の低いカチオンは、最初は電極間で浮遊したままである。リアクター50の壁部または上部電極52に到達する電子は発生器56のアースによって排出され、一方、下部電極51に到達する電子は下部電極51を負の静電位に帯電させる。電極51、52間の静電位の差がある閾値に達すると、負の電極51に引き寄せられたイオンが電場によって大幅に加速されて基板1の表面上(ここではマスク2上)に投じられる。
化学エッチングプロセス:イオンは、一般的には表面付近の自由電子を捕獲してラジカルを形成した後に、衝突表面と化学的に反応する。
運動エネルギーの移動によって衝突表面から原子を引き抜くカチオンの運動エネルギーに関連する物理エッチングプロセス(プラズマエッチング)。
−基板の温度、
−注入されるガスの流量、
−リアクター内部の圧力、
−エッチングされる表面に衝突するイオンの流れ(イオン密度とも呼称され、または、さらには「電源のRF電力」とも呼称される)、
−これらのイオンのエネルギー、または「基板に印加されるバイアス電力」、
を調整することによって制御される。
−第1のRF発生器は、誘導結合によるプラズマの生成(大抵の場合、ICPタイプのもの)、および、ひいては基板に衝突するイオンの流れ(電源のRF電力)の制御を可能にする。
−第2のRF発生器は基板に容量結合されており、基板に衝突するイオンのエネルギー(バイアス電力)の制御を可能にする。
これら2つのタイプのRF発生器は異なる周波数、典型的には第1のRF発生器については12.56MHzおよび第2のRF発生器については13.56MHzを使用する。
エッチングマスク2に最初のオリフィス11が出現すると、基板をエッチングする段階P2が開始される。段階P2は、好ましくは、段階P1のエッチングパラメータが維持された場合にマスクがエッチングされるであろう速度と比較してマスクのエッチング速度を遅くしつつもエッチングプロセスの不均質性を維持するように選択された、段階P1のパラメータとは異なる反応性イオンエッチングパラメータで実施される。
Claims (12)
- 光透過性または受光性の部品の半導体基板の光機能表面をランダムにテクスチャリングするための方法であって、
均質なエッチングマスクを前記基板上に堆積させる工程と、
不均質反応性イオンエッチングによって前記均質なエッチングマスクにランダムな形状、深さおよび分布の複数の窪みを形成する工程であって、前記複数の窪みが第1のランダムな凹凸設計を形成する、工程と、
前記エッチングマスクを介した前記基板の反応性イオンエッチングによって前記基板に前記第1のランダムな凹凸設計を転写して、前記基板の表面上にランダムな形状、深さおよび分布の窪みを含む第2のランダムな凹凸設計を作り出す工程と、
を含む方法。 - 前記不均質反応性イオンエッチングを保証するイオンのエネルギーの制御を、これらのイオンの密度制御とは独立して含む反応性イオンエッチングの不均質性を制御する工程を含む、請求項1に記載の方法。
- 前記エッチングマスクの材料は、前記第2のランダムな凹凸設計の窪みのランダムな深さが前記第1のランダムな凹凸設計の窪みのランダムな深さよりも統計的に大きくなるように前記基板のエッチング速度よりも遅いエッチング速度ならびに同一のエッチングパラメータを有するように選択される、請求項1または2に記載の方法。
- 前記基板のエッチング速度は、前記マスクのエッチング速度よりも少なくとも10倍速い、請求項3に記載の方法。
- 前記エッチングマスクは、感光性樹脂、金属、酸化物または窒化ケイ素を含む群に包含される材料を含む、請求項1〜4のいずれか1項に記載の方法。
- 前記第1のランダムな凹凸設計を転写する工程は、前記エッチングマスクが消失するまで継続される、請求項1〜5のいずれか1項に記載の方法。
- 前記第1のランダムな凹凸設計を転写する工程の後に、前記エッチングマスクの残留物を除去する工程が続く、請求項1〜5のいずれか1項に記載の方法。
- 前記エッチングマスクに窪みを形成する工程は、前記基板に達するオリフィスが出現するまで第1の反応性イオンエッチングパラメータを用いて実施され、
前記第1のランダムな凹凸設計を転写する工程は基本的に、前記第1の反応性イオンエッチングパラメータが維持された場合に前記マスクがエッチングされるであろう速度と比較して前記マスクのエッチング速度を遅くするように選択された第2の反応性イオンエッチングパラメータを用いて実施される、
請求項1〜7のいずれか1項に記載の方法。 - 前記第1のランダムな凹凸設計を前記基板に転写する工程の開始は、反応性イオンエッチングリアクター内における前記基板の材料の原子の存在を検出することにより検出される、請求項8に記載の方法。
- 前記エッチングパラメータには以下のパラメータ:
エッチングリアクター内の反応ガスの圧力、
前記反応ガスをイオン化するための電極に印加される電圧、および
前記反応ガスの組成、
のうちの少なくとも1つが包含される、請求項8に記載の方法。 - 前記基板は単結晶基板である、請求項1〜10のいずれか1項に記載の方法。
- 光透過性または受光性の半導体部品を製造するための方法であって、請求項1〜11のいずれか1項に記載の方法によって前記部品の基板の表面をランダムにテクスチャリングする工程を含む、方法。
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