JP5202248B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5202248B2
JP5202248B2 JP2008300972A JP2008300972A JP5202248B2 JP 5202248 B2 JP5202248 B2 JP 5202248B2 JP 2008300972 A JP2008300972 A JP 2008300972A JP 2008300972 A JP2008300972 A JP 2008300972A JP 5202248 B2 JP5202248 B2 JP 5202248B2
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JP
Japan
Prior art keywords
word line
voltage
memory device
semiconductor memory
transistor
Prior art date
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Expired - Fee Related
Application number
JP2008300972A
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English (en)
Japanese (ja)
Other versions
JP2010129113A (ja
Inventor
真久 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2008300972A priority Critical patent/JP5202248B2/ja
Priority to PCT/JP2009/000756 priority patent/WO2010061489A1/ja
Priority to CN2009801457011A priority patent/CN102216996A/zh
Publication of JP2010129113A publication Critical patent/JP2010129113A/ja
Priority to US13/100,939 priority patent/US8345506B2/en
Application granted granted Critical
Publication of JP5202248B2 publication Critical patent/JP5202248B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2008300972A 2008-11-26 2008-11-26 半導体記憶装置 Expired - Fee Related JP5202248B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008300972A JP5202248B2 (ja) 2008-11-26 2008-11-26 半導体記憶装置
PCT/JP2009/000756 WO2010061489A1 (ja) 2008-11-26 2009-02-23 半導体記憶装置
CN2009801457011A CN102216996A (zh) 2008-11-26 2009-02-23 半导体存储装置
US13/100,939 US8345506B2 (en) 2008-11-26 2011-05-04 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008300972A JP5202248B2 (ja) 2008-11-26 2008-11-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2010129113A JP2010129113A (ja) 2010-06-10
JP5202248B2 true JP5202248B2 (ja) 2013-06-05

Family

ID=42225381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008300972A Expired - Fee Related JP5202248B2 (ja) 2008-11-26 2008-11-26 半導体記憶装置

Country Status (4)

Country Link
US (1) US8345506B2 (zh)
JP (1) JP5202248B2 (zh)
CN (1) CN102216996A (zh)
WO (1) WO2010061489A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570133B2 (en) 2009-12-17 2017-02-14 Macronix International Co., Ltd. Local word line driver
KR20120093507A (ko) 2011-02-15 2012-08-23 삼성전자주식회사 효율적인 전력 공급을 위한 반도체 장치
JP5837311B2 (ja) * 2011-03-01 2015-12-24 ローム株式会社 ドライバ及び半導体記憶装置
CN103943136B (zh) * 2013-01-17 2017-09-08 旺宏电子股份有限公司 一种存储器电路及其操作方法
US10127991B2 (en) * 2016-08-17 2018-11-13 Intel Corporation Three dimensional memory device with access signal triggering from voltage pump output levels
JP6952619B2 (ja) 2018-02-21 2021-10-20 ルネサスエレクトロニクス株式会社 半導体装置
CN108336988B (zh) * 2018-03-07 2022-01-25 中科德诺微电子(深圳)有限公司 一种mos开关的负压驱动电路
US10586600B1 (en) * 2019-01-28 2020-03-10 Micron Technology, Inc. High-voltage shifter with reduced transistor degradation
KR20210076726A (ko) * 2019-12-16 2021-06-24 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
US20230091623A1 (en) * 2021-09-23 2023-03-23 Nanya Technology Corporation Defect inspecting method and system performing the same

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202855A (en) 1991-01-14 1993-04-13 Motorola, Inc. DRAM with a controlled boosted voltage level shifting driver
KR940002859B1 (ko) 1991-03-14 1994-04-04 삼성전자 주식회사 반도체 메모리장치에서의 워드라인 구동회로
JPH0762954B2 (ja) 1991-05-31 1995-07-05 インターナショナル・ビジネス・マシーンズ・コーポレイション ワ−ド線選択・駆動回路
KR960006373B1 (ko) 1992-10-31 1996-05-15 삼성전자주식회사 반도체 메모리 장치의 워드라인 구동회로
JP3306682B2 (ja) 1993-08-18 2002-07-24 日本テキサス・インスツルメンツ株式会社 駆動回路
JPH07114793A (ja) * 1993-08-26 1995-05-02 Nec Corp 半導体記憶装置
JP3667787B2 (ja) 1994-05-11 2005-07-06 株式会社ルネサステクノロジ 半導体記憶装置
JPH0863964A (ja) * 1994-08-29 1996-03-08 Mitsubishi Electric Corp 半導体記憶装置
JP3162591B2 (ja) * 1994-12-09 2001-05-08 株式会社東芝 半導体集積回路
US5696721A (en) * 1995-05-05 1997-12-09 Texas Instruments Incorporated Dynamic random access memory having row decoder with level translator for driving a word line voltage above and below an operating supply voltage range
US5696712A (en) * 1995-07-05 1997-12-09 Sun Microsystems, Inc. Three overlapped stages of radix-2 square root/division with speculative execution
KR100237624B1 (ko) * 1996-10-30 2000-01-15 김영환 반도체 메모리장치의 로우 디코더
JPH10135424A (ja) 1996-11-01 1998-05-22 Mitsubishi Electric Corp 半導体集積回路装置
JPH10241361A (ja) 1997-02-25 1998-09-11 Toshiba Corp 半導体記憶装置
JP3763433B2 (ja) 1997-07-08 2006-04-05 株式会社日立製作所 半導体集積回路装置
JPH11283369A (ja) 1998-03-27 1999-10-15 Hitachi Ltd 半導体集積回路装置
US6147914A (en) 1998-08-14 2000-11-14 Monolithic System Technology, Inc. On-chip word line voltage generation for DRAM embedded in logic process
JP2000067538A (ja) * 1998-08-24 2000-03-03 Alps Electric Co Ltd サーボパターンが記録されたディスクおよび前記ディスクから読まれたサーボパターンの演算処理方法
JP2001126479A (ja) 1999-10-29 2001-05-11 Toshiba Corp 半導体メモリ装置
JP2001202778A (ja) 2000-01-19 2001-07-27 Toshiba Corp 半導体記憶装置
JP2001297583A (ja) 2000-04-13 2001-10-26 Mitsubishi Electric Corp 半導体記憶装置
US6545923B2 (en) 2001-05-04 2003-04-08 Samsung Electronics Co., Ltd. Negatively biased word line scheme for a semiconductor memory device
US6546923B2 (en) * 2001-05-31 2003-04-15 Erven D. Erickson Ball launching apparatus
US20050105372A1 (en) * 2003-10-30 2005-05-19 Fujitsu Limited Semiconductor memory
JP4437710B2 (ja) * 2003-10-30 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ
JP4951786B2 (ja) * 2007-05-10 2012-06-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2008287826A (ja) 2007-05-21 2008-11-27 Panasonic Corp 半導体記憶装置

Also Published As

Publication number Publication date
WO2010061489A1 (ja) 2010-06-03
US20110205829A1 (en) 2011-08-25
JP2010129113A (ja) 2010-06-10
US8345506B2 (en) 2013-01-01
CN102216996A (zh) 2011-10-12

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