JP5192209B2 - プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 - Google Patents

プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 Download PDF

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Publication number
JP5192209B2
JP5192209B2 JP2007254058A JP2007254058A JP5192209B2 JP 5192209 B2 JP5192209 B2 JP 5192209B2 JP 2007254058 A JP2007254058 A JP 2007254058A JP 2007254058 A JP2007254058 A JP 2007254058A JP 5192209 B2 JP5192209 B2 JP 5192209B2
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power
frequency power
etching
electrode
film
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JP2007254058A
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JP2009033080A5 (https=
JP2009033080A (ja
Inventor
公 輿石
典之 小林
滋 米田
健一 花輪
慈 田原
勝 杉本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2007254058A priority Critical patent/JP5192209B2/ja
Priority to US11/867,371 priority patent/US8852385B2/en
Priority to PCT/JP2007/069563 priority patent/WO2008044633A1/ja
Priority to EP19208518.1A priority patent/EP3654367A1/en
Priority to EP07829301.6A priority patent/EP2068353B1/en
Priority to EP17160784.9A priority patent/EP3200220B1/en
Priority to TW096137552A priority patent/TWI509684B/zh
Priority to KR1020097006959A priority patent/KR101154559B1/ko
Priority to CN2007800369156A priority patent/CN101523569B/zh
Publication of JP2009033080A publication Critical patent/JP2009033080A/ja
Publication of JP2009033080A5 publication Critical patent/JP2009033080A5/ja
Application granted granted Critical
Publication of JP5192209B2 publication Critical patent/JP5192209B2/ja
Priority to US14/489,125 priority patent/US10229815B2/en
Priority to US16/228,960 priority patent/US10861678B2/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2007254058A 2006-10-06 2007-09-28 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 Expired - Fee Related JP5192209B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2007254058A JP5192209B2 (ja) 2006-10-06 2007-09-28 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US11/867,371 US8852385B2 (en) 2006-10-06 2007-10-04 Plasma etching apparatus and method
KR1020097006959A KR101154559B1 (ko) 2006-10-06 2007-10-05 플라즈마 에칭 장치 및 플라즈마 에칭 방법
EP07829301.6A EP2068353B1 (en) 2006-10-06 2007-10-05 Plasma etching device and plasma etching method
EP17160784.9A EP3200220B1 (en) 2006-10-06 2007-10-05 Plasma etching apparatus and plasma etching method
TW096137552A TWI509684B (zh) 2006-10-06 2007-10-05 A plasma etch device, a plasma etch method, and a computer readable memory medium
PCT/JP2007/069563 WO2008044633A1 (fr) 2006-10-06 2007-10-05 Dispositif et procédé de gravure au plasma
CN2007800369156A CN101523569B (zh) 2006-10-06 2007-10-05 等离子体蚀刻装置和等离子体蚀刻方法
EP19208518.1A EP3654367A1 (en) 2006-10-06 2007-10-05 Plasma etching apparatus
US14/489,125 US10229815B2 (en) 2006-10-06 2014-09-17 Plasma etching apparatus and method
US16/228,960 US10861678B2 (en) 2006-10-06 2018-12-21 Plasma etching apparatus and method

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2006275722 2006-10-06
JP2006275722 2006-10-06
JP2007164637 2007-06-22
JP2007164637 2007-06-22
JP2007254058A JP5192209B2 (ja) 2006-10-06 2007-09-28 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体

Related Child Applications (1)

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JP2013016925A Division JP5491648B2 (ja) 2006-10-06 2013-01-31 プラズマエッチング装置およびプラズマエッチング方法

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JP2009033080A JP2009033080A (ja) 2009-02-12
JP2009033080A5 JP2009033080A5 (https=) 2010-11-11
JP5192209B2 true JP5192209B2 (ja) 2013-05-08

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Country Status (7)

Country Link
US (3) US8852385B2 (https=)
EP (3) EP2068353B1 (https=)
JP (1) JP5192209B2 (https=)
KR (1) KR101154559B1 (https=)
CN (1) CN101523569B (https=)
TW (1) TWI509684B (https=)
WO (1) WO2008044633A1 (https=)

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