JP5173493B2 - 撮像装置及び撮像システム - Google Patents

撮像装置及び撮像システム Download PDF

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Publication number
JP5173493B2
JP5173493B2 JP2008051120A JP2008051120A JP5173493B2 JP 5173493 B2 JP5173493 B2 JP 5173493B2 JP 2008051120 A JP2008051120 A JP 2008051120A JP 2008051120 A JP2008051120 A JP 2008051120A JP 5173493 B2 JP5173493 B2 JP 5173493B2
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Japan
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pixel
pixels
image
imaging
color
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Expired - Fee Related
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JP2008051120A
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Japanese (ja)
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JP2009212154A5 (enExample
JP2009212154A (ja
Inventor
優 有嶋
英明 ▲高▼田
誠一郎 酒井
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008051120A priority Critical patent/JP5173493B2/ja
Priority to US12/372,099 priority patent/US8106343B2/en
Publication of JP2009212154A publication Critical patent/JP2009212154A/ja
Publication of JP2009212154A5 publication Critical patent/JP2009212154A5/ja
Priority to US13/350,273 priority patent/US20120105670A1/en
Application granted granted Critical
Publication of JP5173493B2 publication Critical patent/JP5173493B2/ja
Priority to US14/150,425 priority patent/US20140117211A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008051120A 2008-02-29 2008-02-29 撮像装置及び撮像システム Expired - Fee Related JP5173493B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008051120A JP5173493B2 (ja) 2008-02-29 2008-02-29 撮像装置及び撮像システム
US12/372,099 US8106343B2 (en) 2008-02-29 2009-02-17 Image sensing system interposing light shielding portion between color filter and pixel arrays
US13/350,273 US20120105670A1 (en) 2008-02-29 2012-01-13 Image sensing apparatus and imaging system
US14/150,425 US20140117211A1 (en) 2008-02-29 2014-01-08 Image sensing apparatus and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008051120A JP5173493B2 (ja) 2008-02-29 2008-02-29 撮像装置及び撮像システム

Publications (3)

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JP2009212154A JP2009212154A (ja) 2009-09-17
JP2009212154A5 JP2009212154A5 (enExample) 2011-04-14
JP5173493B2 true JP5173493B2 (ja) 2013-04-03

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JP (1) JP5173493B2 (enExample)

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JP5173493B2 (ja) * 2008-02-29 2013-04-03 キヤノン株式会社 撮像装置及び撮像システム
JP5274166B2 (ja) * 2008-09-10 2013-08-28 キヤノン株式会社 光電変換装置及び撮像システム
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JP5529613B2 (ja) 2009-04-17 2014-06-25 キヤノン株式会社 光電変換装置及び撮像システム
JP5539105B2 (ja) 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5539104B2 (ja) 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5679653B2 (ja) * 2009-12-09 2015-03-04 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5814613B2 (ja) 2010-05-21 2015-11-17 キヤノン株式会社 固体撮像装置
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP5645513B2 (ja) 2010-07-07 2014-12-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5656484B2 (ja) 2010-07-07 2015-01-21 キヤノン株式会社 固体撮像装置および撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
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JP6053505B2 (ja) 2012-01-18 2016-12-27 キヤノン株式会社 固体撮像装置
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JP6274788B2 (ja) 2013-08-28 2018-02-07 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
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JP2015192234A (ja) * 2014-03-27 2015-11-02 Hoya株式会社 撮像素子、測定装置、測定方法、及び撮像装置
JP6482186B2 (ja) 2014-05-23 2019-03-13 キヤノン株式会社 撮像装置及びその駆動方法
JP6351404B2 (ja) 2014-07-02 2018-07-04 キヤノン株式会社 撮像装置及び撮像システム
WO2016088645A1 (ja) * 2014-12-04 2016-06-09 Jsr株式会社 固体撮像装置
JP6480768B2 (ja) 2015-03-17 2019-03-13 キヤノン株式会社 固体撮像装置及びその駆動方法
JP6558998B2 (ja) * 2015-07-28 2019-08-14 キヤノン株式会社 撮像装置
EP3198631B1 (en) * 2015-12-02 2018-03-07 ABB Schweiz AG Method for manufacturing a semiconductor device
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
JP6904772B2 (ja) 2017-04-26 2021-07-21 キヤノン株式会社 固体撮像装置及びその駆動方法
KR102375989B1 (ko) * 2017-08-10 2022-03-18 삼성전자주식회사 화소 사이의 신호 차이를 보상하는 이미지 센서
JP7102161B2 (ja) 2018-02-15 2022-07-19 キヤノン株式会社 撮像装置、撮像システム、及び、移動体
JP7245014B2 (ja) 2018-09-10 2023-03-23 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の駆動方法
JP7353752B2 (ja) 2018-12-06 2023-10-02 キヤノン株式会社 光電変換装置及び撮像システム
JP7731725B2 (ja) 2021-08-04 2025-09-01 キヤノン株式会社 光電変換装置
JP2023125844A (ja) 2022-02-28 2023-09-07 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体

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Also Published As

Publication number Publication date
US8106343B2 (en) 2012-01-31
US20120105670A1 (en) 2012-05-03
US20090218479A1 (en) 2009-09-03
US20140117211A1 (en) 2014-05-01
JP2009212154A (ja) 2009-09-17

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