CN114008781A - 图像传感器、摄像头组件及移动终端 - Google Patents

图像传感器、摄像头组件及移动终端 Download PDF

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Publication number
CN114008781A
CN114008781A CN201980097805.3A CN201980097805A CN114008781A CN 114008781 A CN114008781 A CN 114008781A CN 201980097805 A CN201980097805 A CN 201980097805A CN 114008781 A CN114008781 A CN 114008781A
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China
Prior art keywords
color
pixel
pixels
image
panchromatic
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CN201980097805.3A
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English (en)
Inventor
唐城
张弓
张海裕
徐锐
杨鑫
蓝和
孙剑波
李小涛
王文涛
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Publication of CN114008781A publication Critical patent/CN114008781A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/65—Control of camera operation in relation to power supply
    • H04N23/651—Control of camera operation in relation to power supply for reducing power consumption by affecting camera operations, e.g. sleep mode, hibernation mode or power off of selective parts of the camera
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H04N25/534—Control of the integration time by using differing integration times for different sensor regions depending on the spectral component
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

一种图像传感器(10)、摄像头组件(40)及移动终端(90)。图像传感器(10)包括多个像素。多个像素中的至少部分像素包括隔离层(1183)、聚光透镜(1186)、及光电转换元件(117)。聚光透镜(1186)设置在隔离层(1183)内。光电转换元件(117)用于接收穿过聚光透镜(1186)的光线。

Description

PCT国内申请，说明书已公开。

Claims (60)

  1. PCT国内申请，权利要求书已公开。
CN201980097805.3A 2019-09-30 2019-09-30 图像传感器、摄像头组件及移动终端 Pending CN114008781A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/109517 WO2021062662A1 (zh) 2019-09-30 2019-09-30 图像传感器、摄像头组件及移动终端

Publications (1)

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CN114008781A true CN114008781A (zh) 2022-02-01

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US (1) US20220139974A1 (zh)
EP (1) EP3985728A4 (zh)
CN (1) CN114008781A (zh)
WO (1) WO2021062662A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114447006A (zh) * 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括图像传感器的电子设备

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JP2003229553A (ja) * 2002-02-05 2003-08-15 Sharp Corp 半導体装置及びその製造方法
JP3729353B2 (ja) * 2003-06-18 2005-12-21 松下電器産業株式会社 固体撮像装置およびその製造方法
US8274715B2 (en) * 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7978240B2 (en) * 2005-10-03 2011-07-12 Konica Minolta Photo Imaging, Inc. Enhancing image quality imaging unit and image sensor
JP4449936B2 (ja) * 2006-03-31 2010-04-14 ソニー株式会社 撮像装置、カメラシステムおよびその駆動方法
JP2009081169A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 固体撮像素子
JP2010183357A (ja) * 2009-02-05 2010-08-19 Panasonic Corp 固体撮像素子、カメラシステムおよび固体撮像素子の駆動方法
JP2011066204A (ja) * 2009-09-17 2011-03-31 Fujifilm Corp 固体撮像素子及びその製造方法並びに撮像装置
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EP3985728A1 (en) 2022-04-20
EP3985728A4 (en) 2022-06-15
US20220139974A1 (en) 2022-05-05
WO2021062662A1 (zh) 2021-04-08

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