JP5155644B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5155644B2
JP5155644B2 JP2007316920A JP2007316920A JP5155644B2 JP 5155644 B2 JP5155644 B2 JP 5155644B2 JP 2007316920 A JP2007316920 A JP 2007316920A JP 2007316920 A JP2007316920 A JP 2007316920A JP 5155644 B2 JP5155644 B2 JP 5155644B2
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Japan
Prior art keywords
lead
leads
bar
common
suspension
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JP2007316920A
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English (en)
Japanese (ja)
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JP2009044114A (ja
JP2009044114A5 (ko
Inventor
典之 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2007316920A priority Critical patent/JP5155644B2/ja
Priority to TW097121800A priority patent/TWI452663B/zh
Priority to TW103127991A priority patent/TWI514534B/zh
Priority to CN2008101339421A priority patent/CN101452902B/zh
Priority to KR1020080069792A priority patent/KR101477807B1/ko
Priority to CN201210209452.1A priority patent/CN102709268B/zh
Priority to US12/176,477 priority patent/US7847376B2/en
Publication of JP2009044114A publication Critical patent/JP2009044114A/ja
Priority to US12/954,876 priority patent/US8368191B2/en
Publication of JP2009044114A5 publication Critical patent/JP2009044114A5/ja
Application granted granted Critical
Publication of JP5155644B2 publication Critical patent/JP5155644B2/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/29001Core members of the layer connector
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    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/92Specific sequence of method steps
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    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
JP2007316920A 2007-07-19 2007-12-07 半導体装置 Active JP5155644B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2007316920A JP5155644B2 (ja) 2007-07-19 2007-12-07 半導体装置
TW103127991A TWI514534B (zh) 2007-07-19 2008-06-11 Semiconductor device and manufacturing method thereof
TW097121800A TWI452663B (zh) 2007-07-19 2008-06-11 Semiconductor device and manufacturing method thereof
KR1020080069792A KR101477807B1 (ko) 2007-07-19 2008-07-18 반도체 장치 및 그 제조 방법
CN2008101339421A CN101452902B (zh) 2007-07-19 2008-07-18 半导体器件及其制造方法
CN201210209452.1A CN102709268B (zh) 2007-07-19 2008-07-18 半导体器件及其制造方法
US12/176,477 US7847376B2 (en) 2007-07-19 2008-07-21 Semiconductor device and manufacturing method of the same
US12/954,876 US8368191B2 (en) 2007-07-19 2010-11-28 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007187789 2007-07-19
JP2007187789 2007-07-19
JP2007316920A JP5155644B2 (ja) 2007-07-19 2007-12-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2009044114A JP2009044114A (ja) 2009-02-26
JP2009044114A5 JP2009044114A5 (ko) 2011-01-27
JP5155644B2 true JP5155644B2 (ja) 2013-03-06

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JP2007316920A Active JP5155644B2 (ja) 2007-07-19 2007-12-07 半導体装置

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JP (1) JP5155644B2 (ko)
KR (1) KR101477807B1 (ko)
CN (2) CN101452902B (ko)
TW (2) TWI514534B (ko)

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Publication number Priority date Publication date Assignee Title
CN102044514A (zh) * 2010-04-29 2011-05-04 中颖电子股份有限公司 芯片引线键合区及应用其的半导体器件
JP5798021B2 (ja) * 2011-12-01 2015-10-21 ルネサスエレクトロニクス株式会社 半導体装置
KR102071078B1 (ko) * 2012-12-06 2020-01-30 매그나칩 반도체 유한회사 멀티 칩 패키지
CN104103620B (zh) * 2014-07-29 2017-02-15 日月光封装测试(上海)有限公司 引线框架及半导体封装体
CN104485323B (zh) * 2014-12-23 2017-08-25 日月光封装测试(上海)有限公司 引线框架和半导体封装体
CN104547477A (zh) * 2015-01-29 2015-04-29 李秀娟 一种用于肛周脓肿引流术后护理的中药制剂及制备方法
JP2017045944A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
JP6394634B2 (ja) * 2016-03-31 2018-09-26 日亜化学工業株式会社 リードフレーム、パッケージ及び発光装置、並びにこれらの製造方法
US11862540B2 (en) 2020-03-06 2024-01-02 Stmicroelectronics Sdn Bhd Mold flow balancing for a matrix leadframe

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US4862246A (en) * 1984-09-26 1989-08-29 Hitachi, Ltd. Semiconductor device lead frame with etched through holes
US4791472A (en) * 1985-09-23 1988-12-13 Hitachi, Ltd. Lead frame and semiconductor device using the same
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CN102709268B (zh) 2015-04-08
TWI514534B (zh) 2015-12-21
JP2009044114A (ja) 2009-02-26
KR20090009142A (ko) 2009-01-22
TWI452663B (zh) 2014-09-11
CN101452902A (zh) 2009-06-10
TW200915520A (en) 2009-04-01

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