JP5110441B2 - 半導体装置用配線部材、半導体装置用複合配線部材、および樹脂封止型半導体装置 - Google Patents
半導体装置用配線部材、半導体装置用複合配線部材、および樹脂封止型半導体装置 Download PDFInfo
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- JP5110441B2 JP5110441B2 JP2009004827A JP2009004827A JP5110441B2 JP 5110441 B2 JP5110441 B2 JP 5110441B2 JP 2009004827 A JP2009004827 A JP 2009004827A JP 2009004827 A JP2009004827 A JP 2009004827A JP 5110441 B2 JP5110441 B2 JP 5110441B2
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Description
図1乃至図11は、本発明の第1の実施の形態を示す図である。ここで、図1は、本発明の第1の実施の形態を示す概略断面図であり、図2は、本発明の第1の実施の形態を示す概略平面図である。また図3は、本発明の第1の実施の形態の変形例1を示す概略断面図であり、図4は、図1に示す半導体装置用配線部材を含む半導体装置を示す概略断面図である。また図5は、図3に示す半導体装置用配線部材を含む半導体装置を示す概略断面図であり、図6(a)−(d)は、半導体装置用配線部材の製造方法を示す図である。また図7(a)−(f)は、図4に示す半導体装置の製造方法を示す図であり、図8(a)−(f)は、図5に示す半導体装置の製造方法を示す図である。また図9は、本発明の第1の実施の形態による半導体装置用配線部材の変形例2を示す概略平面図であり、図10は、本発明の第1の実施の形態による半導体装置用配線部材の変形例3を示す概略平面図である。また図11(a)は、本発明の第1の実施の形態による半導体装置用配線部材の変形例4を示す概略平面図であり、図11(b)は、図11(a)のA−A線断面図である。図14(a)−(f)は、図4に示す半導体装置の製造方法の変形例を示す図であり、図15(a)−(f)は、図5に示す半導体装置の製造方法の変形例を示す図である。
図1に示すように、本実施の形態によるワイヤ接続タイプの半導体装置用配線部材10は、半導体チップ15の電極15A(後述)と例えばリードフレーム20のインナーリード部21(後述)等の外部配線部材とを電気的に接続するためのものである。
次に、本発明の第2の実施の形態について図12および図13(a)−(e)を参照して説明する。
ここで、図12は、本発明の第2の実施の形態を示す概略断面図であり、図13(a)−(e)は、パッケージタイプの半導体装置の製造方法を示す図である。図12および図13(a)−(e)に示す第2の実施の形態は、第2接続部が封止樹脂部から外方に露出している点が異なるものであり、他の構成は上述した第1の実施の形態と略同一である。図12および図13(a)−(e)において、図1乃至図11に示す第1の実施の形態と同一部分には同一の符号を付して詳細な説明は省略する。
次に、本発明の第3の実施の形態について図16乃至図21を参照して説明する。
ここで、図16は、本発明の第3の実施の形態による半導体装置用配線部材を示す概略断面図であり、図17は、本発明の第3の実施の形態による半導体装置用複合配線部材を示す概略断面図である。図18は、本発明の第3の実施の形態による半導体装置用配線部材の変形例を示す概略断面図であり、図19は、本発明の第3の実施の形態による半導体装置を示す概略断面図である。また図20(a)−(d)は、本発明の第3の実施の形態による半導体装置用配線部材の製造方法を示す図であり、図21(a)−(f)は、本発明の第3の実施の形態による半導体装置の製造方法を示す図である。図16乃至図21において、図1乃至図11に示す第1の実施の形態と同一部分には同一の符号を付してある。
次に、本発明の第4の実施の形態について図22乃至図25を参照して説明する。
ここで、図22は、本発明の第4の実施の形態による半導体装置を示す概略断面図であり、図23は、本発明の第4の実施の形態による半導体装置に用いられる半導体装置用配線部材を示す平面図である。図24(a)−(e)は、本発明の第4の実施の形態による半導体装置の製造方法を示す図であり、図25は、本発明の第4の実施の形態による半導体装置の変形例を示す概略断面図である。図22乃至図25に示す第4の実施の形態は、第2接続部27A、27B、銅配線層13、および半導体チップ載置部31の構成が異なるものであり、他の構成は上述した第2の実施の形態と略同一である。図22乃至図25において、図12および図13(a)−(e)に示す第2の実施の形態と同一部分には同一の符号を付して詳細な説明は省略する。
10A 半導体装置用複合配線部材
11 絶縁層
11A、31 半導体チップ載置部
12 金属基板
13 銅配線層
14 接着層
15 半導体チップ
16 第1接続部
18、19、24、27A、27B 第2接続部
20 リードフレーム
21 インナーリード部
22 ダイパッド
23 封止樹脂部
25 リード部
26 スリット孔
28 放熱板接着層
29 放熱板
30、40 半導体装置
Claims (7)
- 半導体チップ上の電極と外部配線部材とを電気的に接続する半導体装置用配線部材において、
絶縁層と、
絶縁層の一の側に配置された金属基板と、
絶縁層の他の側に配置された銅配線層とを備え、
絶縁層の銅配線層側または銅配線層上に半導体チップ載置部が形成され、
銅配線層は、半導体チップ上の電極と接続される第1端子部と、外部配線部材と接続される第2端子部と、第1端子部と第2端子部とを接続する配線部とを含み、
銅配線層は、半導体チップ上の複数の電極と電気的に接続される端子ブロック部を有することを特徴とする半導体装置用配線部材。 - 金属基板は、ステンレスからなることを特徴とする請求項1記載の半導体装置用配線部材。
- 半導体チップ上の電極と配線基板とを電気的に接続するための半導体装置用複合配線部材において、
配線部材と、
この配線部材に電気的に接続されたリードフレームとを備え、
配線部材は、絶縁層と、絶縁層の一の側に配置された金属基板と、絶縁層の他の側に配置された銅配線層とを有し、
絶縁層の銅配線層側または銅配線層上に半導体チップ載置部が形成され、
銅配線層は、半導体チップ上の電極と接続される第1端子部と、リードフレームと接続される第2端子部と、第1端子部と第2端子部とを接続する配線部とを含み、
銅配線層の第2端子部とリードフレームとは第2接続部を介して電気的に接続され、
銅配線層は、半導体チップ上の複数の電極と電気的に接続される端子ブロック部を有することを特徴とする半導体装置用複合配線部材。 - 金属基板は、ステンレスからなることを特徴とする請求項3記載の半導体装置用複合配線部材。
- 第2接続部は、半田からなることを特徴とする請求項3または4記載の半導体装置用複合配線部材。
- 第2接続部は、ボンディングワイヤからなることを特徴とする請求項3または4記載の半導体装置用複合配線部材。
- 樹脂封止型半導体装置において、
絶縁層と、絶縁層の一の側に配置された金属基板と、絶縁層の他の側に配置された銅配線層とを有し、絶縁層の銅配線層側または銅配線層上に半導体チップ載置部が形成され、銅配線層は、半導体チップ上の電極と接続される第1端子部と、外部配線部材と接続される第2端子部と、第1端子部と第2端子部とを接続する配線部とを含む配線部材と、
この配線部材に電気的に接続されたリードフレームと、
配線部材の半導体チップ載置部に載置され、電極を有する半導体チップとを備え、
半導体チップ上の電極と第1端子部とは第1接続部により電気的に接続され、
第2端子部とリードフレームとは第2接続部により電気的に接続され、
リードフレームの一部を露出した状態で半導体チップ、銅配線層、リードフレーム、第1接続部、および第2接続部が樹脂封止部により樹脂封止され、
銅配線層は、半導体チップ上の複数の電極と電気的に接続される端子ブロック部を有することを特徴とする樹脂封止型半導体装置。
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JP5469546B2 (ja) * | 2010-06-22 | 2014-04-16 | 株式会社ジェイデバイス | 半導体装置の製造方法 |
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- 2009-01-13 JP JP2009004827A patent/JP5110441B2/ja active Active
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US9324636B2 (en) | 2016-04-26 |
US8148804B2 (en) | 2012-04-03 |
JP2014143450A (ja) | 2014-08-07 |
US20120175759A1 (en) | 2012-07-12 |
US8796832B2 (en) | 2014-08-05 |
JP5545332B2 (ja) | 2014-07-09 |
US20140299995A1 (en) | 2014-10-09 |
US20090189263A1 (en) | 2009-07-30 |
JP2012248889A (ja) | 2012-12-13 |
JP2009194373A (ja) | 2009-08-27 |
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