JP5059290B2 - 薄膜キャパシタ装置の電極および薄膜キャパシタ装置の電極形成方法 - Google Patents

薄膜キャパシタ装置の電極および薄膜キャパシタ装置の電極形成方法 Download PDF

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Publication number
JP5059290B2
JP5059290B2 JP2004506049A JP2004506049A JP5059290B2 JP 5059290 B2 JP5059290 B2 JP 5059290B2 JP 2004506049 A JP2004506049 A JP 2004506049A JP 2004506049 A JP2004506049 A JP 2004506049A JP 5059290 B2 JP5059290 B2 JP 5059290B2
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layer
electrode
tantalum oxide
capacitor device
thin film
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Expired - Fee Related
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JP2004506049A
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JP2005526390A (ja
JP2005526390A5 (https=
Inventor
ドラブ、ジョン・ジェイ
ドウハーティー、トーマス・ケイ
ケーレ、キャスリーン・エー
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Raytheon Co
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Raytheon Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
JP2004506049A 2002-05-15 2003-05-12 薄膜キャパシタ装置の電極および薄膜キャパシタ装置の電極形成方法 Expired - Fee Related JP5059290B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/147,093 2002-05-15
US10/147,093 US7335552B2 (en) 2002-05-15 2002-05-15 Electrode for thin film capacitor devices
PCT/US2003/014934 WO2003098646A1 (en) 2002-05-15 2003-05-12 Improved electrode for thin film capacitor devices

Publications (3)

Publication Number Publication Date
JP2005526390A JP2005526390A (ja) 2005-09-02
JP2005526390A5 JP2005526390A5 (https=) 2006-06-15
JP5059290B2 true JP5059290B2 (ja) 2012-10-24

Family

ID=29418951

Family Applications (1)

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JP2004506049A Expired - Fee Related JP5059290B2 (ja) 2002-05-15 2003-05-12 薄膜キャパシタ装置の電極および薄膜キャパシタ装置の電極形成方法

Country Status (6)

Country Link
US (2) US7335552B2 (https=)
EP (1) EP1504460B1 (https=)
JP (1) JP5059290B2 (https=)
KR (1) KR100699397B1 (https=)
DE (1) DE60328596D1 (https=)
WO (1) WO2003098646A1 (https=)

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US20060065916A1 (en) 2004-09-29 2006-03-30 Xubai Zhang Varactors and methods of manufacture and use
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
DE102005048774B4 (de) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung
US7560392B2 (en) 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same
KR100849187B1 (ko) * 2006-06-30 2008-07-30 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법

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Also Published As

Publication number Publication date
KR100699397B1 (ko) 2007-03-27
EP1504460B1 (en) 2009-07-29
KR20040106543A (ko) 2004-12-17
US20030216017A1 (en) 2003-11-20
JP2005526390A (ja) 2005-09-02
US20080106846A1 (en) 2008-05-08
EP1504460A1 (en) 2005-02-09
DE60328596D1 (de) 2009-09-10
US7335552B2 (en) 2008-02-26
WO2003098646A1 (en) 2003-11-27
US7545625B2 (en) 2009-06-09

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