KR100699397B1 - 박막 커패시터 장치용 개선된 전극 - Google Patents

박막 커패시터 장치용 개선된 전극 Download PDF

Info

Publication number
KR100699397B1
KR100699397B1 KR1020047018348A KR20047018348A KR100699397B1 KR 100699397 B1 KR100699397 B1 KR 100699397B1 KR 1020047018348 A KR1020047018348 A KR 1020047018348A KR 20047018348 A KR20047018348 A KR 20047018348A KR 100699397 B1 KR100699397 B1 KR 100699397B1
Authority
KR
South Korea
Prior art keywords
electrode
layer
oxide
platinum
adhesion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047018348A
Other languages
English (en)
Korean (ko)
Other versions
KR20040106543A (ko
Inventor
존 제이. 드랩
토마스 케이. 도게티
캐서린에이. 키일
Original Assignee
레이티언 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 레이티언 캄파니 filed Critical 레이티언 캄파니
Publication of KR20040106543A publication Critical patent/KR20040106543A/ko
Application granted granted Critical
Publication of KR100699397B1 publication Critical patent/KR100699397B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
KR1020047018348A 2002-05-15 2003-05-12 박막 커패시터 장치용 개선된 전극 Expired - Fee Related KR100699397B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/147,093 2002-05-15
US10/147,093 US7335552B2 (en) 2002-05-15 2002-05-15 Electrode for thin film capacitor devices
PCT/US2003/014934 WO2003098646A1 (en) 2002-05-15 2003-05-12 Improved electrode for thin film capacitor devices

Publications (2)

Publication Number Publication Date
KR20040106543A KR20040106543A (ko) 2004-12-17
KR100699397B1 true KR100699397B1 (ko) 2007-03-27

Family

ID=29418951

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047018348A Expired - Fee Related KR100699397B1 (ko) 2002-05-15 2003-05-12 박막 커패시터 장치용 개선된 전극

Country Status (6)

Country Link
US (2) US7335552B2 (https=)
EP (1) EP1504460B1 (https=)
JP (1) JP5059290B2 (https=)
KR (1) KR100699397B1 (https=)
DE (1) DE60328596D1 (https=)
WO (1) WO2003098646A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100634509B1 (ko) * 2004-08-20 2006-10-13 삼성전자주식회사 3차원 반도체 캐패시터 및 그 제조 방법
US20060065916A1 (en) 2004-09-29 2006-03-30 Xubai Zhang Varactors and methods of manufacture and use
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
DE102005048774B4 (de) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung
US7560392B2 (en) 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same
KR100849187B1 (ko) * 2006-06-30 2008-07-30 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980077149A (ko) * 1997-04-17 1998-11-16 윤종용 다층전극 구조를 갖는 강유전체 메모리의 커패시터 및 그 제조방법
KR100385446B1 (ko) * 1995-07-07 2004-09-08 로무 가부시키가이샤 유전체캐패시터및그제조방법

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US19874A (en) * 1858-04-06 Improvement in cotton-seed planters
DE2513858C3 (de) 1975-03-27 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Tantal-Dünnschichtkondensators
JPS5874079A (ja) * 1981-10-28 1983-05-04 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタ
KR930012120B1 (ko) * 1991-07-03 1993-12-24 삼성전자 주식회사 반도체장치 및 그의 제조방법
US5142438A (en) * 1991-11-15 1992-08-25 Micron Technology, Inc. Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
US5723171A (en) * 1992-10-23 1998-03-03 Symetrix Corporation Integrated circuit electrode structure and process for fabricating same
US5479317A (en) * 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
US6204111B1 (en) * 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
JP3098923B2 (ja) * 1994-12-28 2000-10-16 松下電子工業株式会社 半導体装置およびその製造方法
JP3480624B2 (ja) * 1995-06-09 2003-12-22 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
GB9512529D0 (en) * 1995-06-20 1995-08-23 Bnfl Fluorchem Ltd Cell treatment
KR100234000B1 (ko) * 1996-09-04 1999-12-15 박호군 피제트티 박막 및 그 제조방법
US6054355A (en) * 1997-06-30 2000-04-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device which includes forming a dummy gate
JPH11195768A (ja) * 1997-10-22 1999-07-21 Fujitsu Ltd ペロブスカイト型酸化物膜を含む電子装置とその製造方法及び強誘電体キャパシタ
US6180481B1 (en) * 1998-01-09 2001-01-30 Micron Technology, Inc. Barrier layer fabrication methods
JPH11205898A (ja) * 1998-01-16 1999-07-30 Mitsubishi Electric Corp 誘電体薄膜素子用電極およびその製造方法とそれを用いた超音波振動子
JP3125922B2 (ja) * 1998-01-20 2001-01-22 ソニー株式会社 誘電体メモリおよびその製造方法
JP3226166B2 (ja) * 1998-02-06 2001-11-05 ソニー株式会社 強誘電体キャパシタおよびその製造方法並びに強誘電体メモリ
KR100324601B1 (ko) * 1998-12-30 2002-04-17 박종섭 계면의 특성 향상을 위한 강유전체 캐패시터 제조 방법
EP1150354A4 (en) * 1999-02-04 2002-08-28 Rohm Co Ltd CAPACITY AND THEIR PRODUCTION
US6101102A (en) * 1999-04-28 2000-08-08 Raytheon Company Fixed frequency regulation circuit employing a voltage variable dielectric capacitor
JP2001223345A (ja) * 1999-11-30 2001-08-17 Hitachi Ltd 半導体装置とその製造方法
US6417537B1 (en) * 2000-01-18 2002-07-09 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US6682772B1 (en) * 2000-04-24 2004-01-27 Ramtron International Corporation High temperature deposition of Pt/TiOx for bottom electrodes
KR100604662B1 (ko) * 2000-06-30 2006-07-25 주식회사 하이닉스반도체 상부전극과 층간절연막 사이의 접착력을 향상시킬 수 있는반도체 메모리 소자 및 그 제조 방법
US6492242B1 (en) * 2000-07-03 2002-12-10 Chartered Semiconductor Manufacturing Ltd. Method of forming of high K metallic dielectric layer
JP2002094018A (ja) * 2000-09-14 2002-03-29 Fujitsu Ltd 電子装置の製造方法
KR100338780B1 (ko) * 2000-09-15 2002-06-01 윤종용 층간절연막의 손상을 방지할 수 있는 반도체 메모리 소자및 그 제조방법
JP2002124647A (ja) * 2000-10-18 2002-04-26 Sharp Corp 半導体装置
KR100506082B1 (ko) * 2000-12-18 2005-08-04 삼성전자주식회사 반구형 잉크 챔버를 가진 잉크 젯 프린트 헤드의 제조 방법
JP2003031806A (ja) * 2001-05-09 2003-01-31 Hitachi Ltd Ｍｏｓトランジスタ及びその製造方法
US6461914B1 (en) * 2001-08-29 2002-10-08 Motorola, Inc. Process for making a MIM capacitor
JP4067079B2 (ja) * 2001-12-26 2008-03-26 松下電器産業株式会社 半導体装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385446B1 (ko) * 1995-07-07 2004-09-08 로무 가부시키가이샤 유전체캐패시터및그제조방법
KR19980077149A (ko) * 1997-04-17 1998-11-16 윤종용 다층전극 구조를 갖는 강유전체 메모리의 커패시터 및 그 제조방법

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1003854460000
1019980077149

Also Published As

Publication number Publication date
JP5059290B2 (ja) 2012-10-24
EP1504460B1 (en) 2009-07-29
KR20040106543A (ko) 2004-12-17
US20030216017A1 (en) 2003-11-20
JP2005526390A (ja) 2005-09-02
US20080106846A1 (en) 2008-05-08
EP1504460A1 (en) 2005-02-09
DE60328596D1 (de) 2009-09-10
US7335552B2 (en) 2008-02-26
WO2003098646A1 (en) 2003-11-27
US7545625B2 (en) 2009-06-09

Similar Documents

Publication Publication Date Title
KR100371891B1 (ko) 마이크로 일렉트로닉 구조물 및 이의 형성 방법
US5811851A (en) Pre-oxidizing high-dielectric-constant material electrodes
JP3188179B2 (ja) 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
US5122923A (en) Thin-film capacitors and process for manufacturing the same
US5965942A (en) Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
US6407422B1 (en) Oxygen diffusion blocking semiconductor capacitor
KR100417743B1 (ko) 90 나노미터 이하의 두께를 갖는 강유전성 박막을 지닌강유전성 메모리와 그 제조 방법
KR19990014269A (ko) 복합 금속 산화물로 만들어진 유전체층을 포함하는 메모리 커패시터를 갖는 반도체 장치의 제조 방법
JP4240542B2 (ja) 集積回路の電極構造とその作製方法
US7545625B2 (en) Electrode for thin film capacitor devices
JP2006310744A (ja) 薄膜キャパシタ及び半導体装置
JP3594787B2 (ja) 半導体装置及びその製造方法
KR100214765B1 (ko) 기판상에 (200)방향으로 우선 배향된 백금 박막 형성방법, 그 방법에 의하여 형성된 백금박막을 구비한 기판 및 전자소자
JPH09129827A (ja) 強誘電体キャパシタ
JPH0687490B2 (ja) 薄膜コンデンサおよびその製造方法
JPH11233734A (ja) 半導体メモリ素子及びその製造方法
JP3120568B2 (ja) 薄膜キャパシタ
JP2000091531A (ja) 薄膜キャパシタ及びその製造方法
JPH0621064A (ja) 半導体装置の製造方法
JPH0652775B2 (ja) 薄膜コンデンサおよびその製造方法
JP2776115B2 (ja) 薄膜コンデンサ及びその製造方法
KR100299563B1 (ko) 반도체 소자의 캐패시터 제조방법
JP2003045745A (ja) 薄膜コンデンサ
KR19980025548A (ko) 강유전체를 이용한 커패시터
JPH10335597A (ja) 容量素子を有する半導体装置およびその製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130221

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140220

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150226

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160218

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170220

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20200218

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220320

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220320

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000