JP5029699B2 - セラミック複合多層基板及びその製造方法並びに電子部品 - Google Patents
セラミック複合多層基板及びその製造方法並びに電子部品 Download PDFInfo
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- JP5029699B2 JP5029699B2 JP2009543717A JP2009543717A JP5029699B2 JP 5029699 B2 JP5029699 B2 JP 5029699B2 JP 2009543717 A JP2009543717 A JP 2009543717A JP 2009543717 A JP2009543717 A JP 2009543717A JP 5029699 B2 JP5029699 B2 JP 5029699B2
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Description
11 第1のセラミック層
12 第2のセラミック層
13 樹脂・セラミック複合層
13A 多孔質セラミック層
14 樹脂層
15 表面電極
19 キャビティ
111’ 第1のセラミックグリーン層
112’ 第2のセラミックグリーン層
113’ 第3のセラミックグリーン層
本実施形態のセラミック複合多層基板10は、例えば図1に示すように、第1のセラミック層11と、第1のセラミック層の一方の主面(上面)に接するように積層され且つ内部拘束層として機能する第2のセラミック層12と、第2のセラミック層12の主面(上面)に接するように積層され且つ樹脂が含浸された樹脂・セラミック複合層13と、を備えている。また、第1のセラミック層11の他方の主面(下面)には下方に向けて第2のセラミック層12、第1のセラミック層11、第2のセラミック層12及び樹脂・セラミック複合層13がこの順序で積層されている。ここで、第1、第2のセラミック層11、12及び樹脂・セラミック複合層13を一つの複合積層体と考えると、セラミック複合多層基板10は複合積層体の下面に第2のセラミック層12を挟んでもう一つの複合積層体が積層されて一体化している。従って、セラミック複合多層基板10は、積層方向中央の第2のセラミック層12を中心として2つの複合積層体が略上下対称に配置された積層構造として形成されている。
本実施形態のセラミック複合多層基板10Aは、図7に示すように、第1の実施形態のセラミック複合多層基板10のうち、上面側の第1のセラミック層11と樹脂・セラミック複合層13の間に配置された第2のセラミック層12及び下面側の樹脂・セラミック複合層13がないこと以外は、第1の実施形態と同様に構成されている。従って、本実施形態においても第1の実施形態と同一または相当部分には同一符号を付して図示してある。
本実施形態のセラミック複合多層基板10Bは、図8に示すように、第1の実施形態のセラミック複合多層基板10のうち、上下に配置された第1のセラミック層11と樹脂・セラミック複合層13の間にそれぞれ配置された第2のセラミック層12を省略したこと以外は、第1の実施形態と同様に構成されている。従って、本実施形態においても第1の実施形態と同一または相当部分には同一符号を付して図示してある。
本実施形態のセラミック複合多層基板10Cは、図9に示すように、樹脂・セラミック複合層13の上面中央部から積層方向中央の第2のセラミック層12の上面に達するキャビティ19を設けたこと以外は、第1の実施形態と同様に構成されている。従って、本実施形態においても第1の実施形態と同一または相当部分には同一符号を付して図示してある。
本実施例では図1に示すセラミック複合多層基板を下記の要領で作製した。このセラミック複合多層基板を用いて平坦性について評価し、その結果を表1に示した。
本実施例では下記の要領でセラミック複合多層基板を作製し、このセラミック複合多層基板の熱膨張係数差、剥離性及び寸法精度について評価し、その結果を表2に示した。また、実施例1のセラミック複合多層基板についても同様の評価を行い、その結果を表2に示した。
Claims (21)
- 第1のセラミック層と、上記第1のセラミック層に接するように配置され、上記第1のセラミック層の平面方向の焼成収縮を抑制し得る第2のセラミック層と、からなる積層体と、上記積層体の少なくとも一方の主面に積層して形成された多孔質セラミック層中に樹脂が含浸された樹脂・セラミック複合層と、少なくとも上記樹脂・セラミック複合層の主面に一部が埋め込まれて形成された表面電極と、を備え、且つ、上記多孔質セラミック層が第1のセラミック層の平面方向の焼成収縮を抑制し得るセラミック材料からなり、上記表面電極が焼結金属からなることを特徴とするセラミック複合多層基板。
- 上記第2のセラミック層は、複数の上記第1のセラミック層の層間に配置されていることを特徴とする請求項1に記載のセラミック複合多層基板。
- 上記第2のセラミック層は、上記第1のセラミック層と上記樹脂・セラミック複合層との層間に配置されていることを特徴とする請求項1または請求項2に記載のセラミック複合多層基板。
- 上記第1のセラミック層と上記第2のセラミック層とからなる積層体の両方の主面それぞれに、上記樹脂・セラミック複合層が設けられていることを特徴とする請求項1〜請求項3のいずれか1項に記載のセラミック複合多層基板。
- 上記第1のセラミック層と上記第2のセラミック層とからなる積層体の一方の主面にのみ、上記樹脂・セラミック複合層が配置されていることを特徴とする請求項1〜請求項3のいずれか1項に記載のセラミック複合多層基板。
- 上記樹脂・セラミック複合層の表面に、樹脂を主成分とする樹脂層が形成されていることを特徴とする請求項1〜請求項5のいずれか1項に記載のセラミック複合多層基板。
- 上記樹脂・セラミック複合層と上記樹脂層との界面には表面電極が形成され、上記表面電極の一方の主面が外部に露出していることを特徴とする請求項6に記載のセラミック複合多層基板。
- 上記表面電極の縁部分のうち少なくとも一部が上記樹脂層で覆われていることを特徴とする請求項7に記載のセラミック複合多層基板。
- 上記表面電極の縁部分の少なくとも一部を覆っている上記樹脂層は、上記樹脂・セラミック複合層に含まれる上記樹脂と同一材料からなる樹脂によって形成されていることを特徴とする請求項8に記載のセラミック複合多層基板。
- 少なくとも一方の主面にキャビティが形成されており、上記第1のセラミック層、上記第2のセラミック層及び上記樹脂・セラミック複合層のうち、少なくとも上記第2のセラミック層または上記樹脂・セラミック複合層が、上記キャビティの底面または側壁面に露出していることを特徴とする請求項1〜請求項9のいずれか1項に記載のセラミック複合多層基板。
- 第1のセラミックグリーン層の少なくとも一方の主面に、上記第1のセラミックグリーン層の平面方向の焼成収縮を抑制し得る第2のセラミックグリーン層を配置してなる未焼成積層体の少なくとも一方の主面に、表面に厚膜導体からなる表面電極部が形成され、上記第1のセラミックグリーン層の平面方向の焼成収縮を抑制し且つ焼成後に多孔質セラミック層となる第3のセラミックグリーン層を配置して、積層、圧着することにより、上記表面電極部の少なくとも一部が上記第3のセラミックグリーン層に埋め込まれて形成された未焼成複合積層体を作製する工程と、
上記未焼成複合積層体を、少なくとも上記第1のセラミックグリーン層及び上記表面電極部が焼結する条件下で焼成する工程と、
上記多孔質セラミック層中に樹脂を含浸して表面に焼結金属からなる表面電極を有する樹脂・セラミック複合層を形成する工程と、
を備えたことを特徴とするセラミック複合多層基板の製造方法。 - 上記第2のセラミックグリーン層を、複数の第1のセラミックグリーン層の層間に配置することを特徴とする請求項11に記載のセラミック複合多層基板の製造方法。
- 上記第2のセラミックグリーン層を、上記第1のセラミックグリーン層と上記第3のセラミックグリーン層との層間に配置することを特徴とする請求項11または請求項12に記載のセラミック複合多層基板の製造方法。
- 上記第1のセラミックグリーン層と上記第2のセラミックグリーン層とからなる未焼成積層体の両方の主面に、上記第3のセラミックグリーン層が設けられていることを特徴とする請求項11〜請求項13のいずれか1項に記載のセラミック複合多層基板の製造方法。
- 上記第1のセラミックグリーン層と上記第2のセラミックグリーン層とからなる未焼成積層体の一方の主面にのみ、上記第3のセラミックグリーン層が設けられていることを特徴とする請求項11〜請求項13のいずれか1項に記載のセラミック複合多層基板の製造方法。
- 上記多孔質セラミック層に上記樹脂を含浸して樹脂・セラミック複合層を形成すると同時に、上記樹脂・セラミック複合層の表面に上記樹脂を主成分とする樹脂層を形成することを特徴とする請求項11〜請求項15のいずれか1項に記載のセラミック複合多層基板の製造方法。
- 上記樹脂・セラミック層と上記樹脂層との界面に表面電極が形成されており、上記樹脂層を形成する際に、上記表面電極が上記樹脂層に覆われている場合には、上記表面電極の一方の主面が外部に露出するよう、上記樹脂層を除去することを特徴とする請求項16記載のセラミック複合多層基板の製造方法。
- 上記表面電極の縁部分のうち少なくとも一部が上記樹脂層で覆われるよう、上記樹脂層を除去することを特徴とする請求項17に記載のセラミック複合多層基板の製造方法。
- 上記未焼成複合積層体には、上記第1のセラミックグリーン層、上記第2のセラミックグリーン層及び上記第3のセラミックグリーン層の少なくとも上記第2のセラミックグリーン層及び上記第3のセラミックグリーン層が、底面または側壁面に露出するようにキャビティが形成されていることを特徴とする請求項11〜請求項18のいずれか1項に記載のセラミック複合多層基板の製造方法。
- 上記表面電極を上記未焼成複合積層体と一体的に焼成することを特徴とする請求項17〜請求項19のいずれか1項に記載のセラミック複合多層基板の製造方法。
- 第1のセラミック層と、上記第1のセラミック層に接するように配置され、上記第1のセラミック層の平面方向の焼成収縮を抑制し得る第2のセラミック層と、からなる積層体と、上記積層体の少なくとも一方の主面に積層して形成された多孔質セラミック層中に樹脂が含浸された樹脂・セラミック複合層と、少なくとも上記樹脂・セラミック複合層の主面に一部が埋め込まれて形成された表面電極と、を有するセラミック複合多層基板を備え、且つ、上記多孔質セラミック層が第1のセラミック層の平面方向の焼成収縮を抑制し得るセラミック材料からなり、上記表面電極が焼結金属からなり、上記表面電極に、実装部品が搭載されていることを特徴とする電子部品。
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CN104589738A (zh) * | 2008-05-15 | 2015-05-06 | 株式会社村田制作所 | 多层陶瓷基板及其制造方法 |
JP5550280B2 (ja) * | 2009-07-29 | 2014-07-16 | 京セラ株式会社 | 多層配線基板 |
US20110121930A1 (en) * | 2009-09-24 | 2011-05-26 | Ngk Insulators, Ltd. | Coil-buried type inductor and a method for manufacturing the same |
JP5777302B2 (ja) * | 2010-07-21 | 2015-09-09 | 株式会社村田製作所 | セラミック電子部品の製造方法、セラミック電子部品及び配線基板 |
CN103052501B (zh) * | 2010-07-30 | 2015-08-26 | 京瓷株式会社 | 绝缘片、其制造方法及采用了该绝缘片的结构体的制造方法 |
WO2013084334A1 (ja) * | 2011-12-08 | 2013-06-13 | 日本碍子株式会社 | 大容量モジュール用基板、及び当該基板の製造方法 |
CN105230140B (zh) * | 2013-05-08 | 2018-09-25 | 株式会社村田制作所 | 多层布线基板 |
TWI642154B (zh) * | 2013-12-25 | 2018-11-21 | 日商三菱綜合材料股份有限公司 | 電源模組用基板及其製造方法、電源模組 |
JPWO2015102107A1 (ja) * | 2014-01-06 | 2017-03-23 | 株式会社村田製作所 | 積層配線基板およびこれを備える検査装置 |
FR3042647B1 (fr) * | 2015-10-20 | 2017-12-01 | Soitec Silicon On Insulator | Structure composite et procede de fabrication associe |
JP6918773B2 (ja) * | 2016-03-11 | 2021-08-11 | 日本碍子株式会社 | 接続基板の製造方法 |
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JP2017183653A (ja) * | 2016-03-31 | 2017-10-05 | スナップトラック・インコーポレーテッド | 高周波用多層配線基板とその製造方法 |
EP3490958A1 (en) * | 2016-07-27 | 2019-06-05 | Corning Incorporated | Ceramic and polymer composite, methods of making, and uses thereof |
WO2018163982A1 (ja) | 2017-03-09 | 2018-09-13 | 株式会社村田製作所 | 多層基板 |
WO2018186154A1 (ja) * | 2017-04-04 | 2018-10-11 | 株式会社村田製作所 | 高周波モジュール及び通信装置 |
JP6908127B2 (ja) * | 2017-11-02 | 2021-07-21 | 株式会社村田製作所 | 回路モジュール |
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CN109103164B (zh) * | 2018-06-28 | 2020-09-29 | 中国电子科技集团公司第二十九研究所 | 一种ltcc基板的bga互联结构及实现方法 |
CN108990321B (zh) * | 2018-08-07 | 2019-06-04 | 信泰电子(西安)有限公司 | 一种任意层pcb板及其制作方法 |
CN110972414B (zh) * | 2018-09-29 | 2022-09-20 | 宏启胜精密电子(秦皇岛)有限公司 | 复合电路板及其制造方法 |
JP7135753B2 (ja) * | 2018-11-13 | 2022-09-13 | 株式会社村田製作所 | セラミック多層基板及びセラミック多層基板の製造方法 |
KR102107985B1 (ko) | 2019-06-05 | 2020-05-07 | 주식회사 케이에스엠컴포넌트 | 플라즈마 처리 장치용 세라믹 구조체 및 그의 제조방법 |
KR102377073B1 (ko) | 2019-12-10 | 2022-03-22 | 비엔엘바이오테크 주식회사 | 치과용 디지털 측정장치 및 이의 측정 방법 |
JP7294530B2 (ja) * | 2020-04-07 | 2023-06-20 | 株式会社村田製作所 | 多層基板およびその製造方法 |
CN115872726A (zh) * | 2022-12-15 | 2023-03-31 | 深圳顺络电子股份有限公司 | 一种高温复合共烧陶瓷结构及制备方法 |
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