JP5020469B2 - 半導体メモリ素子の素子分離膜形成方法 - Google Patents
半導体メモリ素子の素子分離膜形成方法 Download PDFInfo
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- JP5020469B2 JP5020469B2 JP2004370500A JP2004370500A JP5020469B2 JP 5020469 B2 JP5020469 B2 JP 5020469B2 JP 2004370500 A JP2004370500 A JP 2004370500A JP 2004370500 A JP2004370500 A JP 2004370500A JP 5020469 B2 JP5020469 B2 JP 5020469B2
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- 238000000034 method Methods 0.000 title claims abstract description 150
- 238000002955 isolation Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 110
- 238000004140 cleaning Methods 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 238000002203 pretreatment Methods 0.000 claims abstract 2
- 150000004767 nitrides Chemical class 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000005406 washing Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
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- H—ELECTRICITY
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Element Separation (AREA)
Description
11…酸化膜
11a…パッド酸化膜
11b…低電圧ゲート酸化膜
11c…高電圧ゲート酸化膜
12…パッド窒化膜
13…トレンチ
14…ウォール酸化膜
15…絶縁膜
Claims (7)
- (a)セル領域、低電圧領域、および高電圧領域を含む半導体基板上にパッド酸化膜を形成する段階と、
(b)前記パッド酸化膜上にパッド窒化膜を蒸着する段階と、
(c)前記パッド窒化膜、前記パッド酸化膜及び前記半導体基板の一部をエッチングしてトレンチを形成する段階と、
(d)前記トレンチが埋め込まれるように絶縁膜を蒸着する段階と、
(e)前記絶縁膜を平坦化する段階と、
(f)前記パッド窒化膜を除去する段階と、
(g)素子分離膜のコーナー部位に発生されるモウトの深さを減少させるために、DHF洗浄工程とSC−1洗浄工程を用いた前処理洗浄工程、あるいはBOE洗浄工程とSC−1洗浄工程を用いた前処理洗浄工程を行って前記高電圧領域に形成された前記パッド酸化膜が一定の厚さに残留されるように前記高電圧領域に形成された前記パッド酸化膜をエッチングターゲットの厚さだけリセスして、前記セル領域および前記低電圧領域に形成された前記パッド酸化膜を除去する段階と、
を含み、
前記DHF洗浄工程または前記BOE洗浄工程は、前記前処理洗浄工程において、前記高電圧領域に形成された前記パッド酸化膜の前記エッチングターゲットの厚さである60Å〜100Åに対して1/2以上、且つ3/4以下に前記高電圧領域に形成された前記パッド酸化膜が1次リセスされる時間の間に行い、
前記SC−1洗浄工程は、前記パッド酸化膜がリセスされる60℃以上、且つ70℃以下の温度範囲内で前処理洗浄工程において、前記高電圧領域に形成された前記パッド酸化膜の前記エッチングターゲットの厚さである60Å〜100Åに対して1/4以上、且つ1/2以下に前記高電圧領域に形成された前記パッド酸化膜が2次リセスされる時間の間に行われることを特徴とする半導体メモリ素子の素子分離膜形成方法。 - 前記DHF洗浄工程は、30秒間以上、且つ100秒間以下行われることを特徴とする請求項1記載の半導体メモリ素子の素子分離膜形成方法。
- 前記SC−1洗浄工程は、1分間以上、且つ10分間以下行われることを特徴とする請求項1記載の半導体メモリ素子の素子分離膜形成方法。
- 前記DHF洗浄工程の際、DHFは50:1の割合にてH2Oで希釈されたHF溶液であることを特徴とする請求項1または請求項2に記載のメモリ素子の素子分離膜形成方法。
- 前記パッド酸化膜は、前記半導体基板のセル領域に比べて周辺回路領域の高電圧領域でさらに厚く形成されることを特徴とする請求項1記載の半導体メモリ素子の素子分離膜形成方法。
- 前記(e)段階後、平坦化された全体構造の上部面に対してDHF洗浄工程とSC−1洗浄工程を行う段階をさらに含むことを特徴とする請求項1記載の半導体メモリ素子の素子分離膜形成方法。
- 前記(f)段階後、前記パッド窒化膜の除去された全体構造の上部面に対してDHF洗浄工程とSC−1洗浄工程を行う段階をさらに含むことを特徴とする請求項1記載の半導体メモリ素子の素子分離膜形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040070229A KR100580117B1 (ko) | 2004-09-03 | 2004-09-03 | 반도체 메모리 소자의 소자 분리막 형성방법 |
KR2004-070229 | 2004-09-03 |
Publications (2)
Publication Number | Publication Date |
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JP2006073983A JP2006073983A (ja) | 2006-03-16 |
JP5020469B2 true JP5020469B2 (ja) | 2012-09-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004370500A Expired - Fee Related JP5020469B2 (ja) | 2004-09-03 | 2004-12-22 | 半導体メモリ素子の素子分離膜形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7259078B2 (ja) |
JP (1) | JP5020469B2 (ja) |
KR (1) | KR100580117B1 (ja) |
CN (1) | CN1744296B (ja) |
TW (2) | TWI313908B (ja) |
Families Citing this family (10)
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DE10306584A1 (de) * | 2003-02-17 | 2004-08-26 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Niederdruckentladungslampe |
KR100697283B1 (ko) * | 2005-03-29 | 2007-03-20 | 삼성전자주식회사 | 반도체 장치의 소자분리 구조물 및 그 형성방법 |
KR100811441B1 (ko) * | 2006-08-02 | 2008-03-07 | 주식회사 하이닉스반도체 | 플래시 메모리 소자 및 그것의 제조 방법 |
KR100818425B1 (ko) * | 2006-08-29 | 2008-04-01 | 동부일렉트로닉스 주식회사 | 반도체 디스플레이 소자의 셀로우 트렌치 소자분리막 제조방법 |
KR100870297B1 (ko) * | 2007-04-27 | 2008-11-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100972881B1 (ko) * | 2007-06-28 | 2010-07-28 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 형성 방법 |
CN101996873B (zh) * | 2009-08-21 | 2012-07-18 | 中芯国际集成电路制造(上海)有限公司 | 氧化物层及包含其的闪存的栅极的制作方法 |
US8247297B2 (en) * | 2009-12-15 | 2012-08-21 | Alpha & Omega Semiconductor Inc. | Method of filling large deep trench with high quality oxide for semiconductor devices |
JP2012146693A (ja) * | 2011-01-06 | 2012-08-02 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
CN107993973B (zh) * | 2017-11-23 | 2020-08-25 | 长江存储科技有限责任公司 | 浅沟槽隔离结构的制备方法 |
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US6737359B1 (en) * | 1999-12-13 | 2004-05-18 | Taiwan Semiconductor Manufacturing Company | Method of forming a shallow trench isolation using a sion anti-reflective coating which eliminates water spot defects |
KR100350055B1 (ko) * | 1999-12-24 | 2002-08-24 | 삼성전자 주식회사 | 다중 게이트 절연막을 갖는 반도체소자 및 그 제조방법 |
US6225167B1 (en) * | 2000-03-13 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | Method of generating multiple oxide thicknesses by one oxidation step using NH3 nitridation followed by re-oxidation |
JP3551183B2 (ja) * | 2001-04-06 | 2004-08-04 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
CN1178290C (zh) | 2001-07-30 | 2004-12-01 | 旺宏电子股份有限公司 | 浅槽隔离结构的形成方法 |
CN1242466C (zh) * | 2001-09-06 | 2006-02-15 | 旺宏电子股份有限公司 | 降低浅沟渠隔离侧壁氧化层应力与侵蚀的方法 |
KR100426484B1 (ko) * | 2001-12-22 | 2004-04-14 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀 및 그의 제조방법 |
KR100426483B1 (ko) * | 2001-12-22 | 2004-04-14 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 제조 방법 |
JP2004039734A (ja) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | 素子分離膜の形成方法 |
KR100458767B1 (ko) * | 2002-07-04 | 2004-12-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 형성 방법 |
KR100506816B1 (ko) * | 2003-01-06 | 2005-08-09 | 삼성전자주식회사 | 반도체 장치 커패시터의 하부 전극 및 이를 형성하기 위한방법 |
US7508048B2 (en) * | 2003-01-16 | 2009-03-24 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby |
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US6864148B1 (en) * | 2003-09-05 | 2005-03-08 | Mosel Vitelic, Inc. | Corner protection to reduce wrap around |
-
2004
- 2004-09-03 KR KR1020040070229A patent/KR100580117B1/ko not_active IP Right Cessation
- 2004-12-15 TW TW097134378A patent/TWI313908B/zh not_active IP Right Cessation
- 2004-12-15 TW TW093138938A patent/TWI309872B/zh not_active IP Right Cessation
- 2004-12-17 US US11/016,437 patent/US7259078B2/en not_active Expired - Fee Related
- 2004-12-22 JP JP2004370500A patent/JP5020469B2/ja not_active Expired - Fee Related
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2005
- 2005-01-25 CN CN2005100057782A patent/CN1744296B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2006073983A (ja) | 2006-03-16 |
US20060051930A1 (en) | 2006-03-09 |
TWI313908B (en) | 2009-08-21 |
TW200610095A (en) | 2006-03-16 |
TWI309872B (en) | 2009-05-11 |
US7259078B2 (en) | 2007-08-21 |
CN1744296B (zh) | 2012-03-28 |
CN1744296A (zh) | 2006-03-08 |
KR20060021472A (ko) | 2006-03-08 |
TW200903716A (en) | 2009-01-16 |
KR100580117B1 (ko) | 2006-05-12 |
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