JP5001903B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5001903B2
JP5001903B2 JP2008139680A JP2008139680A JP5001903B2 JP 5001903 B2 JP5001903 B2 JP 5001903B2 JP 2008139680 A JP2008139680 A JP 2008139680A JP 2008139680 A JP2008139680 A JP 2008139680A JP 5001903 B2 JP5001903 B2 JP 5001903B2
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Prior art keywords
wiring
insulating layer
wiring board
layer
semiconductor device
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JP2008139680A
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English (en)
Japanese (ja)
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JP2009289908A5 (enExample
JP2009289908A (ja
Inventor
三香子 岡田
智和 石川
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2008139680A priority Critical patent/JP5001903B2/ja
Priority to TW098112219A priority patent/TWI458057B/zh
Priority to US12/423,826 priority patent/US8159057B2/en
Priority to CN2009102029677A priority patent/CN101593736B/zh
Publication of JP2009289908A publication Critical patent/JP2009289908A/ja
Publication of JP2009289908A5 publication Critical patent/JP2009289908A5/ja
Priority to US13/439,992 priority patent/US8383456B2/en
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Publication of JP5001903B2 publication Critical patent/JP5001903B2/ja
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