JP4917195B2 - タングステンの蝕刻抑制剤を含むポリシング組成物 - Google Patents

タングステンの蝕刻抑制剤を含むポリシング組成物 Download PDF

Info

Publication number
JP4917195B2
JP4917195B2 JP21251498A JP21251498A JP4917195B2 JP 4917195 B2 JP4917195 B2 JP 4917195B2 JP 21251498 A JP21251498 A JP 21251498A JP 21251498 A JP21251498 A JP 21251498A JP 4917195 B2 JP4917195 B2 JP 4917195B2
Authority
JP
Japan
Prior art keywords
tungsten
compound
etching
chemical mechanical
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21251498A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11116948A (ja
JPH11116948A5 (https=
Inventor
ケイ．グランバイン スティーブン
シー．ストレインツ クリストファー
ダブリュ．ジー．ホグランド エリック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25414835&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4917195(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JPH11116948A publication Critical patent/JPH11116948A/ja
Publication of JPH11116948A5 publication Critical patent/JPH11116948A5/ja
Application granted granted Critical
Publication of JP4917195B2 publication Critical patent/JP4917195B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
  • Anti-Oxidant Or Stabilizer Compositions (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP21251498A 1997-07-28 1998-07-28 タングステンの蝕刻抑制剤を含むポリシング組成物 Expired - Lifetime JP4917195B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/901803 1997-07-28
US08/901,803 US6083419A (en) 1997-07-28 1997-07-28 Polishing composition including an inhibitor of tungsten etching
US09/086,659 US6136711A (en) 1997-07-28 1998-05-29 Polishing composition including an inhibitor of tungsten etching
US09/086659 1998-05-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011272579A Division JP5571649B2 (ja) 1997-07-28 2011-12-13 タングステンの蝕刻抑制剤を含むポリシング組成物

Publications (3)

Publication Number Publication Date
JPH11116948A JPH11116948A (ja) 1999-04-27
JPH11116948A5 JPH11116948A5 (https=) 2004-12-16
JP4917195B2 true JP4917195B2 (ja) 2012-04-18

Family

ID=25414835

Family Applications (2)

Application Number Title Priority Date Filing Date
JP21251498A Expired - Lifetime JP4917195B2 (ja) 1997-07-28 1998-07-28 タングステンの蝕刻抑制剤を含むポリシング組成物
JP2011272579A Expired - Lifetime JP5571649B2 (ja) 1997-07-28 2011-12-13 タングステンの蝕刻抑制剤を含むポリシング組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011272579A Expired - Lifetime JP5571649B2 (ja) 1997-07-28 2011-12-13 タングステンの蝕刻抑制剤を含むポリシング組成物

Country Status (12)

Country Link
US (2) US6083419A (https=)
EP (1) EP0896042B1 (https=)
JP (2) JP4917195B2 (https=)
KR (1) KR100606315B1 (https=)
CN (2) CN1966594B (https=)
AT (1) ATE288948T1 (https=)
AU (1) AU8595498A (https=)
DE (1) DE69828925T2 (https=)
IL (1) IL134213A (https=)
MY (1) MY116265A (https=)
TW (1) TW580514B (https=)
WO (1) WO1999005706A1 (https=)

Families Citing this family (226)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6693035B1 (en) * 1998-10-20 2004-02-17 Rodel Holdings, Inc. Methods to control film removal rates for improved polishing in metal CMP
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
TW512170B (en) * 1998-07-24 2002-12-01 Ibm Aqueous slurry composition and method for polishing a surface using the same
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
US6447693B1 (en) 1998-10-21 2002-09-10 W. R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
US6143656A (en) * 1998-10-22 2000-11-07 Advanced Micro Devices, Inc. Slurry for chemical mechanical polishing of copper
SG99289A1 (en) * 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
SG73683A1 (en) * 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
JP2000228391A (ja) * 1998-11-30 2000-08-15 Canon Inc 半導体基板の精密研磨方法および装置
FR2789998B1 (fr) 1999-02-18 2005-10-07 Clariant France Sa Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium
US6238592B1 (en) 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
JP3523107B2 (ja) * 1999-03-17 2004-04-26 株式会社東芝 Ｃｍｐ用スラリおよびｃｍｐ法
US6752844B2 (en) * 1999-03-29 2004-06-22 Intel Corporation Ceric-ion slurry for use in chemical-mechanical polishing
EP1196943A4 (en) * 1999-05-26 2007-01-17 Air Prod & Chem PROCESS FOR REMOVING CONTAMINANTS FROM A SURFACE AND COMPOSITIONS USEFUL THEREFOR
TW486514B (en) 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
EP1198534B1 (en) * 1999-07-13 2004-10-13 Kao Corporation Polishing liquid composition
CN1125861C (zh) * 1999-07-16 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6159077A (en) * 1999-07-30 2000-12-12 Corning Incorporated Colloidal silica polishing abrasive
AU6537000A (en) * 1999-08-13 2001-03-13 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
ATE405618T1 (de) * 1999-08-13 2008-09-15 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
US6471735B1 (en) * 1999-08-17 2002-10-29 Air Liquide America Corporation Compositions for use in a chemical-mechanical planarization process
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6280490B1 (en) * 1999-09-27 2001-08-28 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP4238951B2 (ja) * 1999-09-28 2009-03-18 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いたメモリーハードディスクの製造方法
US6423200B1 (en) * 1999-09-30 2002-07-23 Lam Research Corporation Copper interconnect seed layer treatment methods and apparatuses for treating the same
JP4657408B2 (ja) * 1999-10-13 2011-03-23 株式会社トクヤマ 金属膜用研磨剤
US6435944B1 (en) * 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US7229927B1 (en) 1999-11-23 2007-06-12 Corning Incorporated Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics
US6872328B2 (en) * 1999-12-17 2005-03-29 Cabot Microelectronics Corporation Method of polishing or planarizing a substrate
EP1263906A1 (en) * 2000-02-02 2002-12-11 Rodel Holdings, Inc. Polishing composition
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6328774B1 (en) * 2000-02-23 2001-12-11 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
DE10022649B4 (de) * 2000-04-28 2008-06-19 Qimonda Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6646348B1 (en) 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
KR100366304B1 (ko) * 2000-07-28 2003-01-09 제일모직주식회사 반도체 웨이퍼 절연층의 화학적 기계적 연마용 조성물
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6508953B1 (en) 2000-10-19 2003-01-21 Ferro Corporation Slurry for chemical-mechanical polishing copper damascene structures
US6702954B1 (en) * 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
TWI228538B (en) 2000-10-23 2005-03-01 Kao Corp Polishing composition
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
GB0028268D0 (en) * 2000-11-20 2001-01-03 Norske Stats Oljeselskap Well treatment
JP3825246B2 (ja) * 2000-11-24 2006-09-27 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
DE10060697B4 (de) * 2000-12-07 2005-10-06 Siltronic Ag Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens
US6669536B2 (en) 2000-12-11 2003-12-30 Corning Incorporated Method of making optical fluoride laser crystal components
KR20020047418A (ko) * 2000-12-13 2002-06-22 안복현 반도체 소자의 금속층 연마용 슬러리
KR20020047417A (ko) * 2000-12-13 2002-06-22 안복현 반도체 소자의 금속층 연마용 슬러리
KR100398834B1 (ko) * 2000-12-28 2003-09-19 제일모직주식회사 Ｃｍｐ용 슬러리 조성물
US6383065B1 (en) * 2001-01-22 2002-05-07 Cabot Microelectronics Corporation Catalytic reactive pad for metal CMP
US6568997B2 (en) * 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
JP4945857B2 (ja) 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6589100B2 (en) 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6749760B2 (en) * 2001-10-26 2004-06-15 Intel Corporation Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead
JP3692066B2 (ja) * 2001-11-28 2005-09-07 株式会社東芝 Ｃｍｐスラリおよび半導体装置の製造方法
US6719920B2 (en) * 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
KR100415617B1 (ko) 2001-12-06 2004-01-24 엘지.필립스 엘시디 주식회사 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법
KR100457417B1 (ko) * 2001-12-28 2004-11-18 제일모직주식회사 금속배선 연마용 슬러리 조성물
KR100449614B1 (ko) * 2001-12-28 2004-09-22 제일모직주식회사 침식현상이 개선된 금속배선 연마용 슬러리 조성물
KR100451985B1 (ko) * 2001-12-31 2004-10-08 주식회사 하이닉스반도체 반도체소자의 화학적 기계적 연마용 슬러리 및 이를이용한 금속배선 콘택플러그 형성방법
US6660638B1 (en) * 2002-01-03 2003-12-09 Taiwan Semiconductor Manufacturing Company CMP process leaving no residual oxide layer or slurry particles
US20030138201A1 (en) * 2002-01-18 2003-07-24 Cabot Microelectronics Corp. Self-aligned lens formed on a single mode optical fiber using CMP and thin film deposition
US20030139047A1 (en) * 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
KR20040094758A (ko) * 2002-03-04 2004-11-10 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 사용한 배선구조의 형성방법
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
TW200401358A (en) * 2002-06-07 2004-01-16 Showa Denko Kk Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method
US20040007690A1 (en) * 2002-07-12 2004-01-15 Cabot Microelectronics Corp. Methods for polishing fiber optic connectors
JP4083528B2 (ja) 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
DE10246756B4 (de) * 2002-10-07 2006-03-16 Novar Gmbh Branderkennungsverfahren und Brandmelder zu dessen Durchführung
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US6899597B2 (en) * 2003-01-29 2005-05-31 Infineon Technologies Ag Chemical mechanical polishing (CMP) process using fixed abrasive pads
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP2007531992A (ja) 2004-03-30 2007-11-08 ビーエーエスエフ　アクチェンゲゼルシャフト エッチング残渣を除去するための水溶液
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7582127B2 (en) * 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
FR2872823B1 (fr) * 2004-07-08 2006-10-06 Kemesys Composition de polissage mecano chimique, procede de preparation, et utilisation
KR20060016498A (ko) * 2004-08-18 2006-02-22 삼성전자주식회사 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법
US20060089095A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
KR100497413B1 (ko) * 2004-11-26 2005-06-23 에이스하이텍 주식회사 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법
US7300876B2 (en) * 2004-12-14 2007-11-27 Sandisk 3D Llc Method for cleaning slurry particles from a surface polished by chemical mechanical polishing
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
EP1871855B1 (en) 2005-03-25 2010-03-24 DuPont Air Products NanoMaterials L.L.C. Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
WO2006110279A1 (en) * 2005-04-08 2006-10-19 Sachem, Inc. Selective wet etching of metal nitrides
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
US7435162B2 (en) 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
US7294576B1 (en) * 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US9129907B2 (en) * 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US20080149591A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
US20080203059A1 (en) * 2007-02-27 2008-08-28 Cabot Microelectronics Corporation Dilutable cmp composition containing a surfactant
EP2152826B1 (en) * 2007-05-24 2013-07-17 Basf Se Chemical-mechanical polishing composition comprising porous metal-organic framework materials
US7994057B2 (en) * 2007-09-21 2011-08-09 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
US9028572B2 (en) * 2007-09-21 2015-05-12 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP2010167551A (ja) * 2008-12-26 2010-08-05 Nomura Micro Sci Co Ltd 使用済みスラリーの再生方法
CN102650055B (zh) * 2009-06-26 2015-05-06 中国石油化工股份有限公司 一种丁基橡胶氯甲烷甘醇脱水再生系统的复合缓蚀剂
KR101848519B1 (ko) 2010-02-24 2018-04-12 바스프 에스이 수성 연마제 및 그라프트 공중합체 및 패턴화되고 비구조화된 금속 표면의 연마 방법에서 이들의 용도
JP5518523B2 (ja) * 2010-02-25 2014-06-11 富士フイルム株式会社 化学的機械的研磨液及び研磨方法
CN102337079B (zh) * 2010-07-23 2015-04-15 安集微电子（上海）有限公司 一种化学机械抛光液
CN102344760B (zh) * 2010-08-06 2014-12-03 安集微电子（上海）有限公司 一种化学机械抛光液
CN102373012B (zh) * 2010-08-11 2014-11-05 安集微电子（上海）有限公司 一种化学机械抛光液
CN103154321B (zh) 2010-10-06 2015-11-25 安格斯公司 选择性蚀刻金属氮化物的组合物及方法
US8865013B2 (en) 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
KR101335946B1 (ko) * 2011-08-16 2013-12-04 유비머트리얼즈주식회사 텅스텐 연마용 ｃｍｐ 슬러리 조성물
JP6050934B2 (ja) * 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
KR101257336B1 (ko) * 2012-04-13 2013-04-23 유비머트리얼즈주식회사 연마용 슬러리 및 이를 이용한 기판 연마 방법
SG11201407168PA (en) * 2012-05-07 2014-11-27 Basf Se Process for manufacture of semiconductor devices
US20140273458A1 (en) * 2013-03-12 2014-09-18 Air Products And Chemicals, Inc. Chemical Mechanical Planarization for Tungsten-Containing Substrates
US9416297B2 (en) * 2013-11-13 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method using slurry composition containing N-oxide compound
US10358579B2 (en) 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
JP6603234B2 (ja) * 2014-03-12 2019-11-06 キャボット マイクロエレクトロニクス コーポレイション タングステン材料のｃｍｐ用組成物及び方法
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
CN116286222A (zh) 2014-05-13 2023-06-23 巴斯夫欧洲公司 Tin拉回和清洁组合物
US9275899B2 (en) 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
CN106661429B (zh) * 2014-08-26 2019-07-05 凯斯科技股份有限公司 抛光浆料组合物
US20160122590A1 (en) * 2014-10-31 2016-05-05 Air Products And Chemicals, Inc. Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
KR101682085B1 (ko) * 2015-07-09 2016-12-02 주식회사 케이씨텍 텅스텐 연마용 슬러리 조성물
CN105369273A (zh) * 2015-10-15 2016-03-02 当涂县维思共创工业产品设计有限公司 一种铝型材表面清洗抛光剂
KR102543680B1 (ko) * 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11339308B2 (en) * 2016-03-01 2022-05-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
JP6955014B2 (ja) * 2016-09-28 2021-10-27 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨
US10640682B2 (en) 2016-09-29 2020-05-05 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for tungsten
JP6936314B2 (ja) 2016-09-29 2021-09-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのためのケミカルメカニカルポリッシング法
US10633557B2 (en) 2016-09-29 2020-04-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
KR20180061952A (ko) * 2016-11-30 2018-06-08 주식회사 케이씨텍 텅스텐 연마용 슬러리 조성물
KR102798940B1 (ko) * 2016-12-05 2025-04-25 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10286518B2 (en) * 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP6901297B2 (ja) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物
KR102611598B1 (ko) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
TWI723284B (zh) * 2017-09-15 2021-04-01 美商Ｃｍｃ材料股份有限公司 鎢化學機械拋光(cmp)之組合物
WO2019065994A1 (ja) * 2017-09-29 2019-04-04 株式会社フジミインコーポレーテッド 研磨用組成物
WO2019069370A1 (ja) 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
KR102544607B1 (ko) * 2017-11-30 2023-06-19 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
CN108660510A (zh) * 2018-05-10 2018-10-16 天津赤霄科技有限公司 一种新型单晶硅片制绒添加剂的制造及简单制绒方法
US20190382619A1 (en) * 2018-06-18 2019-12-19 Versum Materials Us, Llc Tungsten Chemical Mechanical Polishing Compositions
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN111378375B (zh) * 2018-12-28 2022-05-13 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102782857B1 (ko) 2019-03-13 2025-03-14 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
KR102258900B1 (ko) * 2019-04-22 2021-06-02 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
WO2020245904A1 (ja) 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 研磨液、分散体、研磨液の製造方法及び研磨方法
WO2021023748A1 (en) 2019-08-08 2021-02-11 Basf Se Compositions for tungsten etching inhibition
US20220372632A1 (en) 2019-08-09 2022-11-24 Basf Se Compositions and methods for tungsten etching inhibition
KR102939760B1 (ko) * 2019-11-15 2026-03-13 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
CN113004801B (zh) * 2019-12-20 2024-03-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN113004800B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN113004802B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN113122140B (zh) * 2019-12-30 2024-05-03 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN113122141B (zh) * 2019-12-30 2024-08-02 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
KR102623640B1 (ko) 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN116134110A (zh) 2020-07-28 2023-05-16 Cmc材料股份有限公司 包含阴离子型及阳离子型抑制剂的化学机械抛光组合物
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물
CN114686109B (zh) * 2020-12-30 2026-03-31 安集微电子（上海）有限公司 一种用于钨抛光的化学机械抛光液
CN114686107B (zh) * 2020-12-30 2026-03-31 安集微电子（上海）有限公司 一种用于钨抛光的化学机械抛光液
CN114686106B (zh) * 2020-12-30 2026-03-31 安集微电子科技（上海）股份有限公司 一种用于钨抛光的化学机械抛光液
KR102745114B1 (ko) * 2021-03-18 2024-12-19 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102851125B1 (ko) * 2021-03-31 2025-08-28 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102757718B1 (ko) * 2021-06-02 2025-01-21 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
WO2023007722A1 (ja) 2021-07-30 2023-02-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
KR20230055586A (ko) 2021-10-19 2023-04-26 에스케이하이닉스 주식회사 보론 실리콘 화합물 연마용 cmp 슬러리 조성물과 이를 이용한 cmp 방법 및 반도체 소자의 제조 방법
CN118974189A (zh) 2022-03-31 2024-11-15 巴斯夫欧洲公司 用于抑制钨蚀刻的组合物和方法
CN115386300B (zh) * 2022-08-22 2023-09-19 万华化学集团电子材料有限公司 一种适用于硅晶圆再生的抛光组合物、制备方法及其应用
CN115505932B (zh) * 2022-09-07 2024-02-27 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用
CN116200129A (zh) * 2022-12-30 2023-06-02 宁波平恒电子材料有限公司 一种钨抛光液及其制备方法
KR102911808B1 (ko) * 2023-08-02 2026-01-12 한양대학교 산학협력단 금속막질 연마용 슬러리 조성물
WO2025088012A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
WO2025088005A1 (en) 2023-10-26 2025-05-01 Basf Se Compositions and methods for removal of tungsten and dielectric layers
KR20250066152A (ko) * 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법
KR20250107435A (ko) * 2024-01-05 2025-07-14 삼성에스디아이 주식회사 텅스텐 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐의 연마 방법
TW202546159A (zh) 2024-04-19 2025-12-01 德商巴斯夫歐洲公司 用於拋光介電質的組成物和方法
TW202546160A (zh) 2024-04-19 2025-12-01 德商巴斯夫歐洲公司 用於拋光介電質的組成物和方法
CN118813140A (zh) * 2024-07-25 2024-10-22 中机半导体材料(深圳)有限公司 一种用于碳化硅衬底cmp的氧化铝抛光液的制备方法

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385682A (en) * 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing
US3668131A (en) * 1968-08-09 1972-06-06 Allied Chem Dissolution of metal with acidified hydrogen peroxide solutions
US3565707A (en) * 1969-03-03 1971-02-23 Fmc Corp Metal dissolution
US3843430A (en) * 1972-04-03 1974-10-22 Macdermid Inc Chromate-free bright dip for zinc and cadmium surfaces
SE400581B (sv) * 1974-12-13 1978-04-03 Nordnero Ab Bad for kemisk polering av koppar och dess legeringar
GB1565349A (en) * 1975-10-20 1980-04-16 Albright & Wilson Aluminium polishing compositions
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4345969A (en) * 1981-03-23 1982-08-24 Motorola, Inc. Metal etch solution and method
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
JPH02146732A (ja) * 1988-07-28 1990-06-05 Fujitsu Ltd 研摩液及び研摩方法
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US4921571A (en) * 1989-07-28 1990-05-01 Macdermid, Incorporated Inhibited composition and method for stripping tin, lead or tin-lead alloy from copper surfaces
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US5173438A (en) * 1991-02-13 1992-12-22 Micron Technology, Inc. Method of performing a field implant subsequent to field oxide fabrication by utilizing selective tungsten deposition to produce encroachment-free isolation
FR2691553B1 (fr) * 1992-05-25 1994-12-16 Photomeca Sa Procédé automatisé pour la confection de clichés souples et dispositif de mise en Óoeuvre du procédé.
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
JP3302120B2 (ja) * 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3264405B2 (ja) * 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
US5571373A (en) * 1994-05-18 1996-11-05 Memc Electronic Materials, Inc. Method of rough polishing semiconductor wafers to reduce surface roughness
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3743519B2 (ja) * 1994-10-18 2006-02-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ シリコン−酸化物薄層の製造方法
JP3788810B2 (ja) * 1995-02-20 2006-06-21 株式会社東芝 研磨装置
WO1996038262A1 (en) * 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5645736A (en) * 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5827781A (en) * 1996-07-17 1998-10-27 Micron Technology, Inc. Planarization slurry including a dispersant and method of using same
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5735963A (en) * 1996-12-17 1998-04-07 Lucent Technologies Inc. Method of polishing
KR100571892B1 (ko) * 1997-04-30 2006-04-18 미네소타 마이닝 앤드 매뉴팩춰링 캄파니 반도체 웨이퍼 상부 표면의 평탄화 방법
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching

Also Published As

Publication number Publication date
EP0896042B1 (en) 2005-02-09
WO1999005706A1 (en) 1999-02-04
CN1326199C (zh) 2007-07-11
TW580514B (en) 2004-03-21
KR19990014245A (ko) 1999-02-25
JPH11116948A (ja) 1999-04-27
JP5571649B2 (ja) 2014-08-13
CN1272221A (zh) 2000-11-01
DE69828925D1 (de) 2005-03-17
AU8595498A (en) 1999-02-16
CN1966594B (zh) 2013-01-16
IL134213A0 (en) 2001-04-30
IL134213A (en) 2005-12-18
EP0896042A1 (en) 1999-02-10
MY116265A (en) 2003-12-31
CN1966594A (zh) 2007-05-23
US6136711A (en) 2000-10-24
DE69828925T2 (de) 2005-07-28
US6083419A (en) 2000-07-04
ATE288948T1 (de) 2005-02-15
JP2012074734A (ja) 2012-04-12
KR100606315B1 (ko) 2006-09-22

Similar Documents

Publication Publication Date Title
JP4917195B2 (ja) タングステンの蝕刻抑制剤を含むポリシング組成物
KR100491060B1 (ko) 구리/탄탈륨 기판에 유용한 화학 기계적 연마용 슬러리
KR100745447B1 (ko) 금속의화학기계적연마에유용한조성물및슬러리
US5980775A (en) Composition and slurry useful for metal CMP
KR100491061B1 (ko) 구리/탄탈륨 기판에 유용한 화학 기계적 연마용 슬러리
JP4494538B2 (ja) 銅系基板に有用な化学的・機械的研磨用スラリー
KR100594561B1 (ko) 구리 기판에 유용한 화학 기계적 연마용 슬러리
JP3592894B2 (ja) フッ化物添加剤を含む化学的・機械的研磨用スラリーとその使用方法
US5783489A (en) Multi-oxidizer slurry for chemical mechanical polishing
KR100302671B1 (ko) 화학기계적연마용조성물및화학기계적연마방법
US6033596A (en) Multi-oxidizer slurry for chemical mechanical polishing
JPH10226784A (ja) 化学的・機械的研磨用の複数酸化剤スラリー
JP2002519471A5 (https=)
JP2002516378A (ja) 固体触媒を含むｃｍｐスラリー
HK1028843A (en) A polishing composition including an inhibitor of tungsten etching

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060711

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060901

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080104

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080312

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20080718

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100831

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100903

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110913

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110921

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111213

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120126

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150203

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term