JP4881987B2 - 固体撮像装置および撮像装置 - Google Patents

固体撮像装置および撮像装置 Download PDF

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Publication number
JP4881987B2
JP4881987B2 JP2009232866A JP2009232866A JP4881987B2 JP 4881987 B2 JP4881987 B2 JP 4881987B2 JP 2009232866 A JP2009232866 A JP 2009232866A JP 2009232866 A JP2009232866 A JP 2009232866A JP 4881987 B2 JP4881987 B2 JP 4881987B2
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Japan
Prior art keywords
pixel
readout line
photoelectric conversion
column readout
column
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Expired - Fee Related
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JP2009232866A
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English (en)
Japanese (ja)
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JP2011082768A (ja
JP2011082768A5 (OSRAM
Inventor
祥士 河野
伸弘 竹田
雄一郎 山下
崇 松田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009232866A priority Critical patent/JP4881987B2/ja
Priority to US12/882,276 priority patent/US8582009B2/en
Priority to EP10177871.0A priority patent/EP2315435B1/en
Priority to CN2010102928562A priority patent/CN102036020B/zh
Publication of JP2011082768A publication Critical patent/JP2011082768A/ja
Publication of JP2011082768A5 publication Critical patent/JP2011082768A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
JP2009232866A 2009-10-06 2009-10-06 固体撮像装置および撮像装置 Expired - Fee Related JP4881987B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009232866A JP4881987B2 (ja) 2009-10-06 2009-10-06 固体撮像装置および撮像装置
US12/882,276 US8582009B2 (en) 2009-10-06 2010-09-15 Solid-state image sensor and image sensing apparatus
EP10177871.0A EP2315435B1 (en) 2009-10-06 2010-09-21 Solid-state image sensor and image sensing apparatus
CN2010102928562A CN102036020B (zh) 2009-10-06 2010-09-27 固态图像传感器和摄像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009232866A JP4881987B2 (ja) 2009-10-06 2009-10-06 固体撮像装置および撮像装置

Publications (3)

Publication Number Publication Date
JP2011082768A JP2011082768A (ja) 2011-04-21
JP2011082768A5 JP2011082768A5 (OSRAM) 2011-12-01
JP4881987B2 true JP4881987B2 (ja) 2012-02-22

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JP2009232866A Expired - Fee Related JP4881987B2 (ja) 2009-10-06 2009-10-06 固体撮像装置および撮像装置

Country Status (4)

Country Link
US (1) US8582009B2 (OSRAM)
EP (1) EP2315435B1 (OSRAM)
JP (1) JP4881987B2 (OSRAM)
CN (1) CN102036020B (OSRAM)

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JP5631050B2 (ja) * 2010-05-10 2014-11-26 キヤノン株式会社 固体撮像装置およびカメラ

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