JP4793504B2 - スパッタリングターゲット及びその製造方法 - Google Patents

スパッタリングターゲット及びその製造方法 Download PDF

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Publication number
JP4793504B2
JP4793504B2 JP2010241749A JP2010241749A JP4793504B2 JP 4793504 B2 JP4793504 B2 JP 4793504B2 JP 2010241749 A JP2010241749 A JP 2010241749A JP 2010241749 A JP2010241749 A JP 2010241749A JP 4793504 B2 JP4793504 B2 JP 4793504B2
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JP
Japan
Prior art keywords
powder
naf
sputtering target
target
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010241749A
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English (en)
Japanese (ja)
Other versions
JP2011117077A (ja
Inventor
守斌 張
孝典 白井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43969780&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4793504(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP2010241749A priority Critical patent/JP4793504B2/ja
Priority to IN3820DEN2012 priority patent/IN2012DN03820A/en
Priority to CN201080017285XA priority patent/CN102395702B/zh
Priority to US13/262,540 priority patent/US8795489B2/en
Priority to KR1020117022659A priority patent/KR101099416B1/ko
Priority to EP10828098.3A priority patent/EP2402482B1/en
Priority to PCT/JP2010/006481 priority patent/WO2011055537A1/ja
Priority to TW099138182A priority patent/TW201126002A/zh
Publication of JP2011117077A publication Critical patent/JP2011117077A/ja
Publication of JP4793504B2 publication Critical patent/JP4793504B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
JP2010241749A 2009-11-06 2010-10-28 スパッタリングターゲット及びその製造方法 Expired - Fee Related JP4793504B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010241749A JP4793504B2 (ja) 2009-11-06 2010-10-28 スパッタリングターゲット及びその製造方法
KR1020117022659A KR101099416B1 (ko) 2009-11-06 2010-11-04 스퍼터링 타겟 및 그 제조 방법
CN201080017285XA CN102395702B (zh) 2009-11-06 2010-11-04 溅射靶及其制造方法
US13/262,540 US8795489B2 (en) 2009-11-06 2010-11-04 Sputtering target and method for producing the same
IN3820DEN2012 IN2012DN03820A (enExample) 2009-11-06 2010-11-04
EP10828098.3A EP2402482B1 (en) 2009-11-06 2010-11-04 Sputtering target and process for production thereof
PCT/JP2010/006481 WO2011055537A1 (ja) 2009-11-06 2010-11-04 スパッタリングターゲット及びその製造方法
TW099138182A TW201126002A (en) 2009-11-06 2010-11-05 Sputtering target and process for production thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255540 2009-11-06
JP2009255540 2009-11-06
JP2010241749A JP4793504B2 (ja) 2009-11-06 2010-10-28 スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
JP2011117077A JP2011117077A (ja) 2011-06-16
JP4793504B2 true JP4793504B2 (ja) 2011-10-12

Family

ID=43969780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010241749A Expired - Fee Related JP4793504B2 (ja) 2009-11-06 2010-10-28 スパッタリングターゲット及びその製造方法

Country Status (8)

Country Link
US (1) US8795489B2 (enExample)
EP (1) EP2402482B1 (enExample)
JP (1) JP4793504B2 (enExample)
KR (1) KR101099416B1 (enExample)
CN (1) CN102395702B (enExample)
IN (1) IN2012DN03820A (enExample)
TW (1) TW201126002A (enExample)
WO (1) WO2011055537A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018021105A1 (ja) 2016-07-29 2018-02-01 三菱マテリアル株式会社 Ｃｕ－Ｇａスパッタリングターゲット及びＣｕ－Ｇａスパッタリングターゲットの製造方法
JP2018024933A (ja) * 2016-07-29 2018-02-15 三菱マテリアル株式会社 Ｃｕ−Ｇａスパッタリングターゲット及びＣｕ−Ｇａスパッタリングターゲットの製造方法

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JP5877510B2 (ja) * 2010-01-07 2016-03-08 Ｊｘ金属株式会社 Ｃｕ−Ｇａ系スパッタリングターゲット、同ターゲットの製造方法、光吸収層及び該光吸収層を用いた太陽電池
JP4831258B2 (ja) * 2010-03-18 2011-12-07 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5418463B2 (ja) * 2010-10-14 2014-02-19 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JP5153911B2 (ja) * 2011-04-22 2013-02-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5725610B2 (ja) * 2011-04-29 2015-05-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
WO2012165092A1 (ja) * 2011-06-03 2012-12-06 日東電工株式会社 太陽電池の製造方法
JP5795898B2 (ja) * 2011-07-28 2015-10-14 株式会社アルバック ＣｕＧａＮａ系スパッタリング用ターゲット
JP5795897B2 (ja) * 2011-07-28 2015-10-14 株式会社アルバック ＣｕＧａＮａ系スパッタリング用ターゲット
JP5165100B1 (ja) 2011-11-01 2013-03-21 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5919738B2 (ja) * 2011-11-10 2016-05-18 三菱マテリアル株式会社 スパッタリングターゲットおよびその製造方法
JP5999357B2 (ja) 2012-02-24 2016-09-28 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
CN102751388B (zh) * 2012-07-18 2015-03-11 林刘毓 一种铜铟镓硒薄膜太阳能电池的制备方法
JP5907428B2 (ja) * 2012-07-23 2016-04-26 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP2014037556A (ja) * 2012-08-10 2014-02-27 Mitsubishi Materials Corp スパッタリングターゲット及びその製造方法
JP6311912B2 (ja) * 2012-10-17 2018-04-18 三菱マテリアル株式会社 Ｃｕ−Ｇａ二元系スパッタリングターゲット及びその製造方法
AT13564U1 (de) 2013-01-31 2014-03-15 Plansee Se CU-GA-IN-NA Target
JP6365922B2 (ja) 2013-04-15 2018-08-01 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
CN103255367B (zh) * 2013-04-28 2015-07-29 柳州百韧特先进材料有限公司 太阳能电池cigs吸收层靶材的制备方法
JP6120076B2 (ja) * 2013-08-01 2017-04-26 三菱マテリアル株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP5733357B2 (ja) * 2013-08-02 2015-06-10 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット
WO2015042622A1 (de) * 2013-09-27 2015-04-02 Plansee Se Kupfer-gallium sputtering target
JP2015086434A (ja) * 2013-10-30 2015-05-07 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JP6665428B2 (ja) * 2014-07-08 2020-03-13 三菱マテリアル株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP5973041B2 (ja) * 2014-08-28 2016-08-17 三菱マテリアル株式会社 Ｃｕ−Ｇａスパッタリングターゲット及びＣｕ−Ｇａスパッタリングターゲットの製造方法
WO2016047556A1 (ja) * 2014-09-22 2016-03-31 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP6634750B2 (ja) * 2014-09-22 2020-01-22 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
US9947531B2 (en) 2015-01-12 2018-04-17 NuvoSun, Inc. High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors
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Publication number Priority date Publication date Assignee Title
WO2018021105A1 (ja) 2016-07-29 2018-02-01 三菱マテリアル株式会社 Ｃｕ－Ｇａスパッタリングターゲット及びＣｕ－Ｇａスパッタリングターゲットの製造方法
JP2018024933A (ja) * 2016-07-29 2018-02-15 三菱マテリアル株式会社 Ｃｕ−Ｇａスパッタリングターゲット及びＣｕ−Ｇａスパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
EP2402482B1 (en) 2014-07-02
CN102395702B (zh) 2013-04-10
US20120217157A1 (en) 2012-08-30
KR101099416B1 (ko) 2011-12-27
WO2011055537A1 (ja) 2011-05-12
IN2012DN03820A (enExample) 2015-08-28
EP2402482A1 (en) 2012-01-04
KR20110113213A (ko) 2011-10-14
US8795489B2 (en) 2014-08-05
EP2402482A4 (en) 2012-03-28
CN102395702A (zh) 2012-03-28
JP2011117077A (ja) 2011-06-16
TW201126002A (en) 2011-08-01
TWI360583B (enExample) 2012-03-21

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