JP4748859B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4748859B2
JP4748859B2 JP2001005860A JP2001005860A JP4748859B2 JP 4748859 B2 JP4748859 B2 JP 4748859B2 JP 2001005860 A JP2001005860 A JP 2001005860A JP 2001005860 A JP2001005860 A JP 2001005860A JP 4748859 B2 JP4748859 B2 JP 4748859B2
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Japan
Prior art keywords
insulating film
substrate
forming
film
light emitting
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JP2001005860A
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Japanese (ja)
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JP2001272923A5 (enExample
JP2001272923A (ja
Inventor
舜平 山崎
節男 中嶋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001005860A priority Critical patent/JP4748859B2/ja
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Publication of JP2001272923A5 publication Critical patent/JP2001272923A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2001005860A 2000-01-17 2001-01-15 発光装置の作製方法 Expired - Fee Related JP4748859B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001005860A JP4748859B2 (ja) 2000-01-17 2001-01-15 発光装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000008403 2000-01-17
JP2000-8403 2000-01-17
JP2000008403 2000-01-17
JP2001005860A JP4748859B2 (ja) 2000-01-17 2001-01-15 発光装置の作製方法

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JP2001272923A JP2001272923A (ja) 2001-10-05
JP2001272923A5 JP2001272923A5 (enExample) 2008-01-31
JP4748859B2 true JP4748859B2 (ja) 2011-08-17

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JP2001005860A Expired - Fee Related JP4748859B2 (ja) 2000-01-17 2001-01-15 発光装置の作製方法

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Families Citing this family (72)

* Cited by examiner, † Cited by third party
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TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
US6771328B2 (en) * 2001-07-25 2004-08-03 Lg. Philips Lcd Co., Ltd. Active matrix organic electroluminescent device simplifying a fabricating process and a fabricating method thereof
JP4166455B2 (ja) 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2003255858A (ja) * 2002-02-28 2003-09-10 Sanyo Electric Co Ltd 表示装置
US7164155B2 (en) 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
JP4693411B2 (ja) * 2002-10-30 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004207078A (ja) * 2002-12-25 2004-07-22 Seiko Epson Corp 表示パネルおよびその製造方法
JP4801579B2 (ja) * 2003-01-15 2011-10-26 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4637588B2 (ja) * 2003-01-15 2011-02-23 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4408044B2 (ja) * 2003-01-15 2010-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
TWI351548B (en) 2003-01-15 2011-11-01 Semiconductor Energy Lab Manufacturing method of liquid crystal display dev
US7973313B2 (en) * 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP4718784B2 (ja) * 2003-02-28 2011-07-06 株式会社半導体エネルギー研究所 半導体素子の剥離方法、及び半導体装置の作製方法
JP2004281085A (ja) * 2003-03-12 2004-10-07 Nippon Hoso Kyokai <Nhk> フレキシブル有機ｅｌデバイスおよびフレキシブル有機ｅｌディスプレイ
TW594210B (en) * 2003-08-28 2004-06-21 Ind Tech Res Inst A method for manufacturing a flexible panel for FPD
JP4689249B2 (ja) * 2003-11-28 2011-05-25 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101137797B1 (ko) * 2003-12-15 2012-04-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로장치를 가지는 아이디 태그 및 동전
JP5110766B2 (ja) * 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法
US7271076B2 (en) 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
JP4912586B2 (ja) * 2003-12-19 2012-04-11 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法
KR101205191B1 (ko) 2003-12-19 2012-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
JP4836465B2 (ja) * 2004-02-06 2011-12-14 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法及び薄膜集積回路用素子基板
KR101127888B1 (ko) 2004-02-06 2012-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로의 제조방법 및 소자 기판
CN1918708B (zh) 2004-02-06 2013-07-17 株式会社半导体能源研究所 半导体装置
JP4989854B2 (ja) * 2004-02-06 2012-08-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101219748B1 (ko) 2004-03-22 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로 제작방법
JP5030388B2 (ja) * 2004-03-22 2012-09-19 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP5008266B2 (ja) * 2004-03-25 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101527270B (zh) * 2004-06-02 2012-07-04 株式会社半导体能源研究所 一种半导体设备
CN100517728C (zh) * 2004-06-24 2009-07-22 株式会社半导体能源研究所 制造薄膜集成电路的方法
JP4912627B2 (ja) * 2004-06-24 2012-04-11 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP2006049859A (ja) * 2004-06-29 2006-02-16 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP5041681B2 (ja) * 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4749062B2 (ja) * 2004-07-16 2011-08-17 株式会社半導体エネルギー研究所 薄膜集積回路を封止する装置及びｉｃチップの作製方法
JP5041686B2 (ja) * 2004-07-30 2012-10-03 株式会社半導体エネルギー研究所 薄膜集積回路の剥離方法および半導体装置の作製方法
KR101203090B1 (ko) 2004-07-30 2012-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP4912641B2 (ja) * 2004-08-23 2012-04-11 株式会社半導体エネルギー研究所 無線チップの作製方法
JP4954515B2 (ja) * 2004-09-10 2012-06-20 株式会社半導体エネルギー研究所 表示装置の作製方法
US8040469B2 (en) 2004-09-10 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same and apparatus for manufacturing the same
JP4801337B2 (ja) * 2004-09-21 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI372413B (en) 2004-09-24 2012-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same, and electric appliance
US7422935B2 (en) * 2004-09-24 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and semiconductor device and electronic device
JP5072208B2 (ja) * 2004-09-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7736964B2 (en) 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
JP5072217B2 (ja) * 2004-11-22 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5089037B2 (ja) * 2004-12-03 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7482248B2 (en) 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
JP5025141B2 (ja) * 2005-02-28 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP5052033B2 (ja) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7465674B2 (en) 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5084173B2 (ja) * 2005-05-31 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5057703B2 (ja) * 2005-05-31 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7485511B2 (en) 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
JP2007096288A (ja) * 2005-08-31 2007-04-12 Sumitomo Chemical Co Ltd トランジスタ及びその製造方法、並びに、このトランジスタを有する半導体装置
JP5063066B2 (ja) * 2005-09-30 2012-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2007043285A1 (en) 2005-09-30 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2007188779A (ja) * 2006-01-13 2007-07-26 Toshiba Matsushita Display Technology Co Ltd 有機ｅｌ表示装置
JP5532557B2 (ja) * 2007-07-09 2014-06-25 大日本印刷株式会社 ガスバリア性シート、ガスバリア性シートの製造方法、封止体、及び有機ｅｌディスプレイ
JP5460108B2 (ja) 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2010072319A (ja) * 2008-09-18 2010-04-02 Toshiba Mobile Display Co Ltd 表示素子の製造方法
JP5586920B2 (ja) 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
JP5386525B2 (ja) * 2011-02-15 2014-01-15 株式会社半導体エネルギー研究所 発光装置及び発光装置の作製方法
WO2015125046A1 (en) * 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and peeling method
US10003023B2 (en) * 2016-04-15 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device

Family Cites Families (4)

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JP2784027B2 (ja) * 1989-03-20 1998-08-06 株式会社日立製作所 液晶表示装置
JP3454965B2 (ja) * 1995-03-22 2003-10-06 株式会社半導体エネルギー研究所 液晶表示装置及びその作製方法
JP3578828B2 (ja) * 1995-03-21 2004-10-20 株式会社半導体エネルギー研究所 表示装置の作製方法
JPH11251059A (ja) * 1998-02-27 1999-09-17 Sanyo Electric Co Ltd カラー表示装置

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