JP5460108B2 - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP5460108B2 JP5460108B2 JP2009094062A JP2009094062A JP5460108B2 JP 5460108 B2 JP5460108 B2 JP 5460108B2 JP 2009094062 A JP2009094062 A JP 2009094062A JP 2009094062 A JP2009094062 A JP 2009094062A JP 5460108 B2 JP5460108 B2 JP 5460108B2
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- insulating layer
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- inorganic insulating
- silicon nitride
- inorganic compound
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- 239000004065 semiconductor Substances 0.000 title claims description 208
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 69
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 69
- 150000002484 inorganic compounds Chemical class 0.000 claims description 46
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- 239000010703 silicon Substances 0.000 description 18
- 230000006870 function Effects 0.000 description 17
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- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
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- 229910052762 osmium Inorganic materials 0.000 description 1
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- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Description
本実施の形態を、図1乃至図4、図14を用いて説明する。なお図14は図1に示した断面図に対応する上面図である。
本実施の形態においては、上記実施の形態1で示した半導体装置とは異なる例について示し、図5、図6を用いて説明する。
本実施の形態においては、上記実施の形態2で説明した半導体装置について具体的に示し、その作製方法について説明する。
本実施の形態では、上記実施の形態3で説明した半導体装置の作製方法について、別の構成について説明する。
本実施の形態では、半導体装置の応用例を示す。ここでは、半導体装置の応用例の1つとして、RFID(ICタグともいう)について説明する。
102 第1の無機絶縁層
103 半導体素子層
104 第2の無機絶縁層
105 開口部
106 有機絶縁層
107 開口部
108 凹凸
109 第3の無機絶縁層
110 凹凸
201 薄膜トランジスタ
202 下地膜
204 半導体層
205 ゲート絶縁層
206 ゲート電極
207 層間絶縁膜
208 層間絶縁膜
209 層間絶縁膜
210 配線
303 半導体素子層
501 開口部
701 基板
702 第1の無機絶縁層
703 薄膜トランジスタ
704 半導体層
704A 半導体層
704B 半導体層
705 ゲート絶縁層
706 ゲート電極
707 層間絶縁膜
708 配線
709 開口部
711 第2の無機絶縁層
712 有機絶縁層
713 開口部
714 開口
715 開口
716 開口部
717 導電層
718 第3の無機絶縁層
719 凹凸
801 剥離層
802 第1の封止層
803 粘着テープ
804 ローラ
805 第2の封止層
806 半導体装置
1001 封止層
1002 半導体素子層
1003 アンテナ
1004 領域
1211 アンテナ
1212 回路部
1260 電源部
1261 信号処理部
1262 整流回路
1263 保持容量
1264 復調回路
1265 クロック生成/補正回路
1266 認識/判定回路
1267 メモリコントローラ
1268 マスクROM
1269 符号化回路
1270 変調回路
1301 RFID
1311 無記名債券類
1312 証書類
1313 ラベル台紙(セパレート紙)
1314 ラベル
1315 ボックス
1316 タグ
1317 書籍
603a 下層下地膜
603b 上層下地膜
Claims (10)
- 基板上に、第1の無機化合物を有する第1の絶縁層を形成し、
前記第1の絶縁層上に、半導体層、ゲート絶縁層、及びゲート電極を形成し、
前記半導体層、前記ゲート絶縁層、及び前記ゲート電極上に、第2の絶縁層を形成し、
前記第2の絶縁層上に、前記半導体層と電気的に接続された第1の導電層を形成し、
前記第1の絶縁層、前記第2の絶縁層、及び前記第1の導電層上に、第2の無機化合物を有し、かつ前記第1の絶縁層に接する領域を有する第3の絶縁層を形成し、
前記第3の絶縁層上に、有機化合物を有する第4の絶縁層を形成し、
前記第4の絶縁層をエッチングすることにより、前記第3の絶縁層に達する第1の開口部及び第2の開口部を形成し、
前記第3の絶縁層をエッチングすることにより、前記第1の導電層に達する第3の開口部と、前記第1の絶縁層に達する第4の開口部と、を形成し、
前記第4の絶縁層上に、前記第1の開口部及び前記第3の開口部を介して前記第1の導電層と電気的に接続された第2の導電層を形成し、
前記第1の絶縁層、前記第3の絶縁層、前記第4の絶縁層、及び前記第2の導電層上に、第3の無機化合物を有し、且つ前記第2の開口部及び前記第4の開口部を介して前記第1の絶縁層と接する領域を有する第5絶縁層を形成し、
前記第1の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第2の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第3の無機化合物は、窒化珪素又は窒化酸化珪素である、
ことを特徴とする半導体装置の作製方法。 - 基板上に、第1の無機化合物を有する第1の絶縁層を形成し、
前記第1の絶縁層上に、半導体素子層を形成し、
前記第1の絶縁層及び前記半導体素子層上に、第2の無機化合物を有し、かつ前記第1の絶縁層に接する領域を有する第2の絶縁層を形成し、
前記第2の絶縁層上に、有機化合物を有する第3の絶縁層を形成し、
前記第3の絶縁層をエッチングすることにより、前記第2の絶縁層に達する第1の開口部を形成し、
前記第2の絶縁層をエッチングすることにより、前記第1の絶縁層に達する第2の開口部を形成し、
前記第1の絶縁層、前記第2の絶縁層、及び前記第3の絶縁層上に、第3の無機化合物を有し、且つ前記第1の開口部及び前記第2の開口部を介して前記第1の絶縁層と接する領域を有する第4の絶縁層を形成し、
前記第1の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第2の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第3の無機化合物は、窒化珪素又は窒化酸化珪素である、
ことを特徴とする半導体装置の作製方法。 - 基板上に、第1の無機化合物を有する第1の絶縁層を形成し、
前記第1の絶縁層上に、半導体素子層を形成し、
前記第1の絶縁層及び前記半導体素子層上に、第2の無機化合物を有し、かつ前記第1の絶縁層に接する領域を有する第2の絶縁層を形成し、
前記第2の絶縁層上に、有機化合物を有する第3の絶縁層を形成し、
前記第3の絶縁層をエッチングすることにより、前記第2の絶縁層に達する開口部を形成し、
前記第2の絶縁層をエッチングすることにより、前記第2の絶縁層の表面に凹凸を形成し、
前記第2の絶縁層及び前記第3の絶縁層上に、第3の無機化合物を有し、且つ前記開口部を介して前記第2の絶縁層の前記凹凸が形成された表面と接する領域を有する第4の絶縁層を形成し、
前記第1の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第2の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第3の無機化合物は、窒化珪素又は窒化酸化珪素である、
ことを特徴とする半導体装置の作製方法。 - 請求項1において、
前記第5の絶縁層は、表面に凹凸を有することを特徴とする半導体装置の作製方法。 - 請求項2又は3において、
前記第4の絶縁層は、表面に凹凸を有することを特徴とする半導体装置の作製方法。 - 基板上の第1の絶縁層と、
前記第1の絶縁層上の、半導体層、ゲート絶縁層、及びゲート電極と、
前記半導体層、前記ゲート絶縁層、及び前記ゲート電極上の、第2の絶縁層と、
前記第2の絶縁層上の第1の導電層と、
前記第1の絶縁層、前記第2の絶縁層、及び前記第1の導電層上の、第3の絶縁層と、
前記第3の絶縁層上の第4の絶縁層と、
前記第4の絶縁層上の第2の導電層と、
前記第1の絶縁層、前記第3の絶縁層、前記第4の絶縁層、及び前記第2の導電層上の、第5の絶縁層と、を有し、
前記第1の絶縁層は、第1の無機化合物を有し、
前記第3の絶縁層は、第2の無機化合物を有し、
前記第3の絶縁層は、前記第1の絶縁層と接する領域を有し、
前記第4の絶縁層は、有機化合物を有し、
前記第5の絶縁層は、第3の無機化合物を有し、
前記第1の導電層は、前記半導体層と電気的に接続され、
前記第2の導電層は、前記第1の導電層と電気的に接続され、
前記第5の絶縁層は、前記第3の絶縁層及び前記第4の絶縁層に設けられた開口部を介して、前記第1の絶縁層と接する領域を有し、
前記第1の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第2の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第3の無機化合物は、窒化珪素又は窒化酸化珪素である、
ことを特徴とする半導体装置。 - 基板上の第1の絶縁層と、
前記第1の絶縁層上の半導体素子層と、
前記第1の絶縁層及び前記半導体素子層上の第2の絶縁層と、
前記第2の絶縁層上の第3の絶縁層と、
前記第1の絶縁層、前記第2の絶縁層、及び前記第3の絶縁層上の第4の絶縁層と、を有し、
前記第1の絶縁層は、第1の無機化合物を有し、
前記第2の絶縁層は、第2の無機化合物を有し、
前記第2の絶縁層は、前記第1の絶縁層と接する領域を有し、
前記第3の絶縁層は、有機化合物を有し、
前記第4の絶縁層は、第3の無機化合物を有し、
前記第4の絶縁層は、前記第2の絶縁層及び前記第3の絶縁層に設けられた開口部を介して、前記第1の絶縁層と接する領域を有し、
前記第1の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第2の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第3の無機化合物は、窒化珪素又は窒化酸化珪素である、
ことを特徴とする半導体装置。 - 基板上の第1の絶縁層と、
前記第1の絶縁層上の半導体素子層と、
前記第1の絶縁層及び前記半導体素子層上の第2の絶縁層と、
前記第2の絶縁層上の第3の絶縁層と、
前記第2の絶縁層及び前記第3の絶縁層上の第4の絶縁層と、を有し、
前記第1の絶縁層は、第1の無機化合物を有し、
前記第2の絶縁層は、第2の無機化合物を有し、
前記第2の絶縁層は、前記第1の絶縁層と接する領域を有し、
前記第3の絶縁層は、有機化合物を有し、
前記第4の絶縁層は、第3の無機化合物を有し、
前記第2の絶縁層は、表面に凹凸を有し、
前記第4の絶縁層は、前記凹凸を有する前記第2の絶縁層の表面と接する領域を有し、
前記第1の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第2の無機化合物は、窒化珪素又は窒化酸化珪素であり、
前記第3の無機化合物は、窒化珪素又は窒化酸化珪素である、
ことを特徴とする半導体装置。 - 請求項6において、
前記第5の絶縁層は、表面に凹凸を有することを特徴とする半導体装置。 - 請求項7又は8において、
前記第4の絶縁層は、表面に凹凸を有することを特徴とする半導体装置。
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JP5627768B2 (ja) * | 2011-04-22 | 2014-11-19 | 京セラ株式会社 | 表示装置 |
CN102938499A (zh) * | 2012-01-12 | 2013-02-20 | 厦门英诺尔电子科技股份有限公司 | 一种超高频rfid蚀刻天线及其制造工艺 |
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